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SOT23
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D
D
G
S G
S
G S
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 70 90 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 100 125 °C/W
Maximum Junction-to-Lead Steady-State RθJL 63 80 °C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
15 10
-10V VDS=-5V
-6V
12 -8V 8
-5V
9 6
-ID (A)
-ID(A)
-4.5V
6 4 125°C
-4V
3 2 25°C
VGS=-3.5V
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
200 1.6
180 Normalized On-Resistance
160 1.4 VGS=-10V
ID=-2.6A
RDS(ON) (mΩ )
140
17
120 VGS=-4.5V 1.2
5
100 2
80 1 VGS=-4.5V 10
ID=-2A
60 VGS=-10V
40 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175
-ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
18
Gate Voltage (Note E) (Note E)
300 1.0E+02
ID=-2.6A
260 1.0E+01
40
1.0E+00
220
RDS(ON) (mΩ )
1.0E-01 125°C
-IS (A)
180 125°C
1.0E-02 25°C
140
1.0E-03
60 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)
10 300
VDS=-15V
ID=-2.6A
250
8
Ciss
Capacitance (pF)
200
-VGS (Volts)
6
150
4
100 Coss
2
50
Crss
0 0
0 1 2 3 4 5 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0 10000
TA=25°C
10.0 1000
10µs
RDS(ON)
-ID (Amps)
Power (W)
limited 100µs
1.0 100
1ms
10ms
100ms
0.1 DC 10
TJ(Max)=150°C 1s
TA=25°C 10s
0.0 1
0.01 0.1 1 10 100 0.00001 0.001 0.1 10 1000
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Ambient (Note F)
10
D=Ton/T In descending order
Zθ JA Normalized Transient
RθJA=125°C/W
1
0.1
0.01
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Ig
Charge
td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+
Vgs 10%
Vds
Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds