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The Field Effect Transistor (FET) The Field Effect Transistor (FET)
The concept of the FET After World War II, William
predates the BJT. Shockley at Bell Labs started
working on a device using
In 1925, Julius Lilienfeld Lilienfeld’s patents.
filed a patent on the The result of the effort gave
operation of the device. us the point-contact
transistor.
In 1934 Oskar Heil
In 1951, Shockley developed
patented another FET,
and invented the junction
but no record of the transistor (BJT).
device being invented The first practical FET was
was found. developed many years later
after the BJT while improving
Julius Lilienfeld (1881 – 1963) William Shockley (1910 – 1989)
on the design.
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The Field Effect Transistor (FET) The Field Effect Transistor (FET)
The FET wasn’t physically implemented until Properties of FETs:
after BJTs due to problems associated with FETs are voltage controlled devices.
it’s manufacturing and fabrication. More temperature stable than BJTs.
FETs have a smaller device footprint than BJTs,
Later advancements in manufacturing
allowing for more devices to be fabricated per
techniques made the FET easier to fabricate unit area in ICs.
than BJTs. FETs can dissipate higher powers than BJTs of
the same size.
This led to integrated circuit (IC) designers
Usually exhibits poor high-frequency response
employing FETs in their circuitry over BJTs. and poor linearity.
Sensitive to static electricity and can easily be
damaged.
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G P P G N N G G
N-type P-type
S S S S
FET Terminals:
G G
Source – source of carriers
+
P - P
Faucet analogy
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G
+
P --- P
IDSs – Saturated drain to
VDD source current
VP – Pinch-off voltage
N-type
VDS
VP
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JFET Biasing and Operation JFET Biasing and Operation
When VGS < 0V When VGS < 0V
D Channel is D
Even narrower channel + IDS “pinched off” + IDS = 0
G - G - -
+
P - P P P
VDD VDD
+
S S
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VGS = 0
IDSs
VGS = VP
VP VP
VGS VDS
VP
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FET Biasing and the Q-Point
The transfer characteristics of the FET is non-
linear (quadratic)
Locating the Q-point in the “most linear” part
of the curve is very important.
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