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Ex/EE/T/122/85/2013

B ACHELOR OF ENGINEERING IN E LECTRICAL ENGINEERING


EXAMINATION, 2013
( 1st Year, 2nd Semester )
ELECTRONICS - I
Time : Three hours Full Marks : 100
(50 marks for each part)
Use a separate Answer-Script for each part
PART - I
Answer question No.1 and any two from the rest.
1. Answer the following questions : 552
a) What do you mean by thermal runway ?
b) Define Peak Inverse Voltage (PIV) of a diode.
c) On which factor does the reverse saturation current of a
p-n junction diode depend ? Does it vary with applied bias ?
d) The gain of a transistor in CE mode is 0. 98. What is the
maximum current gain ?
e) Draw the volt-ampere characteristics of Si diode under
forward bias condition for two different temperatures T1
and T2, where T2 > T1 .
2. a) How is barrier field developed across the junction of a pn
diode under unbaised condition ? 6
b) The Fermi level of an intrinsic semiconductor lies near the
middle of the forbidden gap but for an n-type semiconductor
it is near to the conductor band-explain. 7

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c) Describe the current conduction mechanism in a p-type 9. a) What is the function of regulated power supply ? Give the
semiconductor. 7 block diagram of a regulated power supply and explain the
3. a) Write down the expression for the voltage-current function of each block. Describe how a transistorized shunt
relationship of a p-n junction diode and explain each term. voltage regulator does provide a steady state dc voltage at its
4 output against input voltage fluctuation. 2+4+6

b) Draw the volt-ampere characteristics of a p-n junction diode b) Write down the working principle of a photo-transistor with
under forward and reverse bias condition and explain. 6 suitable circuit diagram. Sketch the output current-voltage
c) Differentiate between Zener and avalance breakdown. 10 characteristics of such transistor and explain the nature of
4. a) Draw a neat sketch of the output characteristics of a p-n-p this curve. 4+4
transistor in CB configuration and explain its each region of 10. a) Define three types of multi-vibrators. With the help of
operation. 3+7 suitable circuit diagram explain the principle of operation of
b) Explain physically how does the self biasing arrangement of bistable multi-vibrator. 3+3+4
a transistor offer better thermal stability. (No mathematical
b) Write short notes (any two) of the following : 255=10
derivation is required). 5
c) For the transistor shown in Figure 1, the CB current gain is i) Light-emitting diode (LED)

α = 0 ⋅ 9920. Determine RE such that the emitter current is ii) Liquid crystal display (LCD)
limited to IE = 1. 0 mA. Also determine IB, IC and VBC .
iii) Opto couplers
(Consider VEB = 0. 7V) 5
iv) Photo diode

Fig. 1
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h) The low pass filter used in power supply is to suppress the 5. a) Draw a neat sketch to show different current components
. in a p-n-p transistor. Also mention the origin of each
component. 4+4
i) Energy is released in the form of photon due to
recombination. b) Explain the concept of load line and Q-point with respect to
the biasing of a transistor. 6
j) LCD’s are used in display..
c) Give the performance analysis of a transistor amplifier in
7. a) Give the circuit diagram of an n-channel junction field effect
CE, CB, and CC configuration. 6
transistor and explain its operation. 2+3

b) Sketch the drain and transfer characteristics of an n channel


PART - II
junction field effect transistor and explain nature of these
Answer question No.6 and any two from the rest.
curves. 2+2+4
6. Answer all questions : Fill up the blanks. 1051=10
c) Explain with suitable sketch now the pinch-off condition
arises in a junction field effect transistor. 3 a) To change the state of bistable multi-vibrator, a
must be applied.
d) Define the ac FET parameters and how they are related ?
4 b) The field effect transistor basically a resistor..

c) The drift process is occurred in but diffusion is


8. a) Define class A, B, AB and C power amplifiers. How the
seen in .
efficiency of a power amplifier is determined ? 4+2
d) The voltage gain of common drain configuration is .
b) Draw the circuit of complementary symmetry push-pull
class B power amplifier and explain the circuit operation. e) Euen harmonics are in a push-pull connection.

3+5 f) The maximum efficiency of a push-pull class B power


c) How the cross over distortion arises in power amplifiers ? amplifier is .
Explain with necessary circuit diagram. Give the remedy of
g) The darlington connection offers high gain.
such distortion. 4+2

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