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FDD9407_F085 N-Channel Power Trench® MOSFET

FDD9407L-F085
N-Channel Logic Level PowerTrench® MOSFET
40 V, 100 A, 1.7 mΩ D

Features
„ Typ rDS(on) = 1.6mΩ at VGS = 10V, ID = 80A
D
„ Typ Qg(tot) = 86nC at VGS = 10V, ID = 80A G
„ UIS Capability G
„ RoHS Compliant S
D-PAK
TO-252
„ Qualified to AEC Q101
(TO-252) S
Applications
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Electronic Steering
„ Integrated Starter/alternator
„ Distributed Power Architectures and VRM
„ Primary Switch for 12V Systems

MOSFET Maximum Ratings TJ = 25°C unless otherwise noted

Symbol Parameter Ratings Units


VDSS Drain to Source Voltage 40 V
VGS Gate to Source Voltage ±20 V
Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 100
ID A
Pulsed Drain Current TC = 25°C See Figure4
EAS Single Pulse Avalanche Energy (Note 2) 171 mJ
Power Dissipation 227 W
PD
Derate above 25oC 1.52 W/oC
oC
TJ, TSTG Operating and Storage Temperature -55 to + 175
o
RθJC Thermal Resistance Junction to Case 0.66 C/W
o
RθJA Maximum Thermal Resistance Junction to Ambient (Note 3) 52 C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity


FDD9407L FDD9407_F085 D-PAK(TO-252) 13” 12mm 2500 units

Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.08mH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating
presented here is based on mounting on a 1 in2 pad of 2oz copper.

©2018 ON Semiconductor Components Industries, LLC. 1 Publication Order Number:


February-2018,Rev.1 (Vietnam) FDD9407L-F085
FDD9407_F085 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 40 - - V
VDS = 40V, TJ = 25oC - - 1 μA
IDSS Drain to Source Leakage Current
VGS = 0V TJ = 175oC(Note 4) - - 1 mA
IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 2.0 3.1 4.0 V
ID = 80A, TJ = 25oC - 1.6 2 mΩ
rDS(on) Drain to Source On Resistance
VGS= 10V TJ = 175oC(Note 4) - 2.64 3.22 mΩ

Dynamic Characteristics
Ciss Input Capacitance - 6390 - pF
VDS = 25V, VGS = 0V,
Coss Output Capacitance - 1580 - pF
f = 1MHz
Crss Reverse Transfer Capacitance - 95 - pF
Rg Gate Resistance f = 1MHz - 2.3 - Ω
Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V VDD = 32V - 86 112 nC
Qg(th) Threshold Gate Charge VGS = 0 to 2V ID = 80A - 12 15.6 nC
Qgs Gate to Source Gate Charge - 30 - nC
Qgd Gate to Drain “Miller“ Charge - 15 - nC

Switching Characteristics
ton Turn-On Time - - 120 ns
td(on) Turn-On Delay Time - 27 - ns
tr Rise Time VDD = 20V, ID = 80A, - 48 - ns
td(off) Turn-Off Delay Time VGS = 10V, RGEN = 6Ω - 42 - ns
tf Fall Time - 18 - ns
toff Turn-Off Time - - 97 ns

Drain-Source Diode Characteristics


ISD = 80A, VGS = 0V - - 1.25 V
VSD Source to Drain Diode Voltage
ISD = 40A, VGS = 0V - - 1.2 V
Trr Reverse Recovery Time IF = 80A, dISD/dt = 100A/μs, - 58 88 ns
Qrr Reverse Recovery Charge VDD=32V - 83 143 nC
Notes:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.

February-2018,Rev.1 (Vietnam) 2
FDD9407_F085 N-Channel Power Trench® MOSFET
Typical Characteristics

1.2 300
POWER DISSIPATION MULTIPLIER

CURRENT LIMITED VGS = 10V


1.0 250 BY PACKAGE

ID, DRAIN CURRENT (A)


0.8 200 CURRENT LIMITED
BY SILICON

0.6 150

0.4 100

0.2 50

0.0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE(oC) TC, CASE TEMPERATURE(oC)

Figure 1. Normalized Power Dissipation vs Case Figure 2. Maximum Continuous Drain Current vs
Temperature Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
NORMALIZED THERMAL

D = 0.50
IMPEDANCE, ZθJC

0.20
0.10 PDM
0.05
0.02
0.1 0.01 t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE PEAK TJ = PDM x ZθJA x RθJA + TC

0.01
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance

1000
VGS = 10V
IDM, PEAK CURRENT (A)

100

TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
10
I = I2 175 - TC
150

SINGLE PULSE
1
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION(s)

Figure 4. Peak Current Capability

February-2018,Rev.1 (Vietnam) 3
FDD9407_F085 N-Channel Power Trench® MOSFET
Typical Characteristics

If R = 0
1000 1000 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]

IAS, AVALANCHE CURRENT (A)


ID, DRAIN CURRENT (A)

100
100
100us
10 STARTING TJ = 25oC

OPERATION IN THIS 1ms 10


AREA MAY BE
1 LIMITED BY rDS(on) STARTING TJ = 150oC
SINGLE PULSE 10ms
TJ = MAX RATED 100ms
TC = 25oC
0.1 1
1E-3 0.01 0.1 1 10 100 1000
1 10 100 tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching
Capability

250 300
PULSE DURATION = 80μs
IS, REVERSE DRAIN CURRENT (A)

VGS = 0 V
DUTY CYCLE = 0.5% MAX
200 VDD = 5V 100
ID, DRAIN CURRENT (A)

150 TJ = 175oC TJ = 175 oC


TJ = 25 oC

100 10
TJ = -55oC
TJ = 25oC

50

0 1
3 4 5 6 7 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics

250 250
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

200 VGS 200


15V Top VGS
10V
5.5V 15V5.5V
Top
150 8V
150 10V
7V
5.5V 6V
8V
7V
5.5V Bottom
6V
100 100 5.5V Bottom

50 50 80μs PULSE WIDTH


80μs PULSE WIDTH
Tj=175oC
Tj=25oC
0 0
0 1 2 0.0 0.5 1.0 1.5 2.0
VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics

February-2018,Rev.1 (Vietnam) 4
FDD9407_F085 N-Channel Power Trench® MOSFET
Typical Characteristics

30 1.8

DRAIN TO SOURCE ON-RESISTANCE


ID = 80A PULSE DURATION = 80μs PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
rDS(on), DRAIN TO SOURCE

1.6
ON-RESISTANCE (mΩ)

24

1.4

NORMALIZED
18

TJ = 175oC TJ = 25oC 1.2


12
1.0

6 ID = 80A
0.8
VGS = 10V

0 0.6
2 4 6 8 10 -80 -40 0 40 80 120 160 200
VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE(oC)

Figure 11. Rdson vs Gate Voltage Figure 12. Normalized Rdson vs Junction
Temperature

1.2 1.2
VGS = VDS ID = 1mA
NORMALIZED DRAIN TO SOURCE

ID = 250μA
THRESHOLD VOLTAGE

BREAKDOWN VOLTAGE

1.0 1.1
NORMALIZED GATE

0.8 1.0

0.6 0.9

0.4 0.8
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC) TJ, JUNCTION TEMPERATURE (oC)

Figure 13. Normalized Gate Threshold Voltage vs Figure 14. Normalized Drain to Source
Temperature Breakdown Voltage vs Junction Temperature

10000 10
VGS, GATE TO SOURCE VOLTAGE(V)

ID = 80A
Ciss
CAPACITANCE (pF)

8
VDD = 20V
1000
Coss 6

4
100

Crss 2
f = 1MHz
VGS = 0V
10 0
0.1 1 10 100 0 20 40 60 80 100
VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC)

Figure 15. Capacitance vs Drain to Source Figure 16. Gate Charge vs Gate to Source
Voltage Voltage

February-2018,Rev.1 (Vietnam) 5
D-PAK TO-252

E A
C2
b3

L3
D

H
L4
L5

L
gage plane height (0.5 mm)
b b2 C
e
A1
e1
D1

E1

MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 2.18 2.38 0.086 0.094
A1 - 0.127 - 0.005
b 0.64 0.88 0.025 0.035
b2 0.76 1.14 0.030 0.045
b3 4.95 5.46 0.195 0.215
C 0.46 0.61 0.018 0.024
C2 0.46 0.89 0.018 0.035
D 5.97 6.22 0.235 0.245
D1 4.10 - 0.161 -
E 6.35 6.73 0.250 0.265
E1 4.32 - 0.170 -
H 9.40 10.41 0.370 0.410
e 2.28 BSC 0.090 BSC
e1 4.56 BSC 0.180 BSC
L 1.40 1.78 0.055 0.070
L3 0.89 1.27 0.035 0.050
L4 - 1.02 - 0.040
L5 1.01 1.52 0.040 0.060
Notes 
• Dimension L3/E1 is for reference only.

February-2018,Rev.1 (Vietnam) 6
Product specification
Supersedes data of VIETNAM