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PHYSICAL CONSTANTS
Electron charge, e (or q) = 1.6 × 10−19 C, Boltzmann constant, 𝑘 = 1.38 × 10−23 J/K
𝑘𝑇
Thermal Voltage 𝑉𝑇 = ≅ 26 mV at 𝑇 = 300 K
𝑒
𝑘𝑇 𝑁𝑎 𝑁𝑑 𝑁𝑎 𝑁𝑑
Built-in potential barrier 𝑉𝑏𝑖 = ln � 2 � = 𝑉𝑇 ln � 2 �
𝑒 𝑛𝑖 𝑛𝑖
𝑑𝑛
1-D electron diffusion relationship 𝐽𝑛 = 𝑒𝐷𝑛
𝑑𝑥
𝑑𝑝
1-D hole diffusion relationship 𝐽𝑝 = −𝑒𝐷𝑝
𝑑𝑥
𝐷𝑛 𝐷𝑝 𝑘𝑇
Einstein relation = =
𝜇𝑛 𝜇𝑝 𝑒
𝑣
� 𝐷�
Diode Equation 𝑖𝐷 = 𝐼𝑠 �𝑒 𝑉𝑇 − 1�
𝑉𝑅 −1/2 𝑑𝑄
Junction & diffusion capacitance 𝐶𝑗 = 𝐶𝑗0 �1 + � , 𝐶𝑑 =
𝑉𝑏𝑖 𝑑𝑉𝐷
Version 9.0
MOSFETS
NMOS Enhancement
PMOS Enhancement
Version 9.0
MOSFET Small-Signal Models
NMOS
PMOS
PMOS
(Note Polarities)
2 −1
𝑟𝑜 = �𝜆𝐾𝑛 �𝑉𝐺𝑆𝑄 − 𝑉𝑇𝑁 � �
1 𝑔𝑚 = 2�𝐾𝑛 𝐼𝐷𝑄 (NMOS)
≅
𝜆𝐼𝐷𝑄
𝑉𝐴 𝑔𝑚 = 2�𝐾𝑝 𝐼𝐷𝑄 (PMOS)
=
𝐼𝐷𝑄
Version 9.0
NPN BJT DC Equivalent Circuit
𝐼𝐶 = 𝛽𝐼𝐵 , 𝐼𝐸 = (1 + 𝛽)𝐼𝐵 , 𝐼𝐸 = 𝐼𝐶 + 𝐼𝐵
𝐼𝐶 = 𝛽𝐼𝐵 , 𝐼𝐸 = (1 + 𝛽)𝐼𝐵 , 𝐼𝐸 = 𝐼𝐶 + 𝐼𝐵
NPN PNP
Both Transistors
𝑖𝐶 = 𝐼𝑆 𝑒 𝑣𝐵𝐸 ⁄𝑉𝑇
𝑖𝐶 𝛽
𝑖𝐸 = 𝛼=
𝛼 1+𝛽
𝑖𝐶 𝛼
𝑖𝐵 = 𝛽=
𝛽 1−𝛼
𝑖𝐸 = 𝑖𝐶 + 𝑖𝐵 = (1 + 𝛽)𝑖𝐵
Version 9.0
BJT Hybrid-𝝅 Small-Signal Models
NPN
PNP
𝑉𝐴 𝐼𝐶𝑄 𝛽
𝑟𝑜 = , 𝑔𝑚 = , 𝑔𝑚 ≅ 40𝐼𝐶𝑄 @ room temp, 𝑟𝜋 =
𝐼𝐶𝑄 𝑉𝑇 𝑔𝑚
𝑟𝜇
𝑔𝑚 = 𝐼𝐶 ⁄𝑉𝑇 𝑟𝜋 = 𝛽 ⁄𝑔𝑚 𝑟𝜇 = 𝑟𝜋 ⁄ℎ𝑟𝑒 𝑟𝑜 =
𝑟𝜇 ℎ𝑜𝑒 − 𝛽
𝑔𝑚 1 𝐼𝐶 𝜏 𝑇
𝑟𝑏 = ℎ𝑖𝑒 − 𝑟𝜋 𝑓𝑇 = 𝑓𝛽 = 𝐶𝑏 = = 𝑔𝑚 𝜏 𝑇
2𝜋�𝐶𝜋 + 𝐶𝜇 � 𝑟𝜋 �𝐶𝜋 + 𝐶𝜇 � 𝑉𝑇
𝐶0
𝐶𝜋 = 𝐶𝑏 + 𝐶𝑗𝑒 𝐶𝜇 = 𝐶𝑗𝑐 𝐶𝑗 (𝑉𝑅 ) =
𝑉 𝑚
�1 + 𝑉𝑅 �
𝑏𝑖
Version 9.0
BJT Impedance Scaling
𝑅𝑜 = 𝑅 + 𝑟𝜊 (1 + 𝑔𝑚 𝑅)
𝑅𝑜 ≅ 𝑟𝑜 [1 + 𝑔𝑚 ((𝑅𝐵 + 𝑟𝜋 )‖𝑅𝐸 )]
Version 9.0
h-Parameters
v1 = h11i1 + h12 v2
i2 = h21i1 + h22 v2
∆ v1 ∆ v1
h11 = v2 =0 h12 = i1 =0
i1 v2
∆ i2 ∆ i2
h21 = v2 =0 h22 = i1 = 0
i1 v2
BJT CE Version
𝑟𝜋 1+𝛽 1
ℎ𝑖𝑒 = 𝑟𝑏 + 𝑟𝜋 �𝑟𝜇 ℎ𝑓𝑒 = 𝛽 ℎ𝑟𝑒 ≅ ℎ𝑜𝑒 = +
𝑟𝜇 𝑟𝜇 𝑟𝑜
y-Parameters
i1 = y11v1 + y12 v2
i2 = y21v1 + y22 v2
∆ ∆ i1
i1
y11 = v2 =0 y12 = v1 =0
v1 v2
∆ ∆ i2
i2
y21 = v2 =0 y22 = v1 =0
v1 v2
Version 9.0
Wien Bridge Oscillator
vo To sustain oscillation, the loop gain must be 3. Loop
3 gain with the two resistors is:
𝑅2
+ 1
𝑅1
Also
vo 𝑣𝑜
3 𝑣𝑥 = 𝑣𝑦 =
3
Frequency of oscillation
1
𝜔𝑜 = rad/s
𝑅𝐶
𝑉𝑚
Ripple voltage with load 𝑅𝐿 𝑉𝑟 =
2𝑓𝑅𝐿 𝐶
Version 9.0