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Formula and Data Sheet

PHYSICAL CONSTANTS

Material 𝑬𝒈 (eV) 𝑩 (cm-3 K-3/2)

Silicon (Si) 1.1 5.23 × 1015

Gallium arsenide (GaAs) 1.4 2.1 × 1014

Germanium (Ge) 0.66 1.66 × 1015

Electron charge, e (or q) = 1.6 × 10−19 C, Boltzmann constant, 𝑘 = 1.38 × 10−23 J/K

DIODES and RELATED


−𝐸𝑔
Intrinsic carrier concentration � �
𝑛𝑖 = 𝐵𝑇 3⁄2 𝑒 2𝑘𝑇

Thermal equilibrium condition 𝑛𝑜 𝑝𝑜 = 𝑛𝑖2

𝑘𝑇
Thermal Voltage 𝑉𝑇 = ≅ 26 mV at 𝑇 = 300 K
𝑒

𝑘𝑇 𝑁𝑎 𝑁𝑑 𝑁𝑎 𝑁𝑑
Built-in potential barrier 𝑉𝑏𝑖 = ln � 2 � = 𝑉𝑇 ln � 2 �
𝑒 𝑛𝑖 𝑛𝑖

Electron and hole drift 𝑣𝑑𝑛 = −𝜇𝑛 𝐸, 𝑣𝑑𝑝 = +𝜇𝑝 𝐸

𝑑𝑛
1-D electron diffusion relationship 𝐽𝑛 = 𝑒𝐷𝑛
𝑑𝑥
𝑑𝑝
1-D hole diffusion relationship 𝐽𝑝 = −𝑒𝐷𝑝
𝑑𝑥
𝐷𝑛 𝐷𝑝 𝑘𝑇
Einstein relation = =
𝜇𝑛 𝜇𝑝 𝑒
𝑣
� 𝐷�
Diode Equation 𝑖𝐷 = 𝐼𝑠 �𝑒 𝑉𝑇 − 1�

Small-signal resistance 𝑟𝑑 = 𝑉𝑇 ⁄𝐼𝐷

𝑉𝑅 −1/2 𝑑𝑄
Junction & diffusion capacitance 𝐶𝑗 = 𝐶𝑗0 �1 + � , 𝐶𝑑 =
𝑉𝑏𝑖 𝑑𝑉𝐷

Version 9.0
MOSFETS

NMOS Enhancement

PMOS Enhancement

Region NMOS PMOS


2 ] 2 ]
Non-Saturation/Ohmic 𝑖𝐷 = 𝐾𝑛 [2(𝑣𝐺𝑆 − 𝑉𝑇𝑁 )𝑣𝐷𝑆 − 𝑣𝐷𝑆 𝑖𝐷 = 𝐾𝑝 [2(𝑣𝑆𝐺 + 𝑉𝑇𝑃 )𝑣𝑆𝐷 − 𝑣𝑆𝐷
Saturation 𝑣𝐷𝑆 > 𝑣𝐷𝑆 (𝑠𝑎𝑡) = 𝑣𝐺𝑆 − 𝑉𝑇𝑁 𝑣𝑆𝐷 > 𝑣𝑆𝐷 (𝑠𝑎𝑡) = 𝑣𝑆𝐺 + 𝑉𝑇𝑃
𝑖𝐷 = 𝐾𝑛 (𝑣𝐺𝑆 − 𝑉𝑇𝑁 )2 𝑖𝐷 = 𝐾𝑝 (𝑣𝑆𝐺 + 𝑉𝑇𝑃 )2
𝑣𝐷𝑆 (𝑠𝑎𝑡) = 𝑣𝐺𝑆 − 𝑉𝑇𝑁 𝑣𝑆𝐷 (𝑠𝑎𝑡) = 𝑣𝑆𝐺 + 𝑉𝑇𝑃
Transition Point 2 2
𝑖𝐷 = 𝐾𝑛 �𝑣𝐷𝑆 (𝑠𝑎𝑡)� 𝑖𝐷 = 𝐾𝑝 �𝑣𝑆𝐷 (𝑠𝑎𝑡)�
Enhancement Mode 𝑉𝑇𝑁 > 0 𝑉𝑇𝑃 < 0
Depletion Mode 𝑉𝑇𝑁 < 0 𝑉𝑇𝑃 > 0

MOSFET Constants & Capacitances

𝑊𝜇𝑝 𝐶𝑜𝑥 𝑘𝑝′ 𝑊


𝐾𝑝 = = ∙ 𝑘𝑝′ = 𝜇𝑝 𝐶𝑜𝑥 𝐶𝑜𝑥 = 𝜖𝑜𝑥 /𝑡𝑜𝑥
2𝐿 2 𝐿

𝑊𝜇𝑛 𝐶𝑜𝑥 𝑘𝑛′ 𝑊


𝐾𝑛 = = ∙ 𝑘𝑛′ = 𝜇𝑛 𝐶𝑜𝑥
2𝐿 2 𝐿

Version 9.0
MOSFET Small-Signal Models

NMOS

PMOS

PMOS

(Note Polarities)

2 −1
𝑟𝑜 = �𝜆𝐾𝑛 �𝑉𝐺𝑆𝑄 − 𝑉𝑇𝑁 � �
1 𝑔𝑚 = 2�𝐾𝑛 𝐼𝐷𝑄 (NMOS)

𝜆𝐼𝐷𝑄
𝑉𝐴 𝑔𝑚 = 2�𝐾𝑝 𝐼𝐷𝑄 (PMOS)
=
𝐼𝐷𝑄

Version 9.0
NPN BJT DC Equivalent Circuit

𝐼𝐶 = 𝛽𝐼𝐵 , 𝐼𝐸 = (1 + 𝛽)𝐼𝐵 , 𝐼𝐸 = 𝐼𝐶 + 𝐼𝐵

PNP BJT DC Equivalent Circuit

𝐼𝐶 = 𝛽𝐼𝐵 , 𝐼𝐸 = (1 + 𝛽)𝐼𝐵 , 𝐼𝐸 = 𝐼𝐶 + 𝐼𝐵

BJT Current Relationships

NPN PNP

𝑖𝐶 = 𝐼𝑆 𝑒 𝑣𝐵𝐸 ⁄𝑉𝑇 𝑖𝐶 = 𝐼𝑆 𝑒 𝑣𝐸𝐵 ⁄𝑉𝑇

Both Transistors

𝑖𝐶 = 𝐼𝑆 𝑒 𝑣𝐵𝐸 ⁄𝑉𝑇
𝑖𝐶 𝛽
𝑖𝐸 = 𝛼=
𝛼 1+𝛽
𝑖𝐶 𝛼
𝑖𝐵 = 𝛽=
𝛽 1−𝛼
𝑖𝐸 = 𝑖𝐶 + 𝑖𝐵 = (1 + 𝛽)𝑖𝐵

Version 9.0
BJT Hybrid-𝝅 Small-Signal Models

NPN

PNP

𝑉𝐴 𝐼𝐶𝑄 𝛽
𝑟𝑜 = , 𝑔𝑚 = , 𝑔𝑚 ≅ 40𝐼𝐶𝑄 @ room temp, 𝑟𝜋 =
𝐼𝐶𝑄 𝑉𝑇 𝑔𝑚

Extended BJT Hybrid-𝝅 Small-Signal Model

𝑟𝜇
𝑔𝑚 = 𝐼𝐶 ⁄𝑉𝑇 𝑟𝜋 = 𝛽 ⁄𝑔𝑚 𝑟𝜇 = 𝑟𝜋 ⁄ℎ𝑟𝑒 𝑟𝑜 =
𝑟𝜇 ℎ𝑜𝑒 − 𝛽

𝑔𝑚 1 𝐼𝐶 𝜏 𝑇
𝑟𝑏 = ℎ𝑖𝑒 − 𝑟𝜋 𝑓𝑇 = 𝑓𝛽 = 𝐶𝑏 = = 𝑔𝑚 𝜏 𝑇
2𝜋�𝐶𝜋 + 𝐶𝜇 � 𝑟𝜋 �𝐶𝜋 + 𝐶𝜇 � 𝑉𝑇

𝐶0
𝐶𝜋 = 𝐶𝑏 + 𝐶𝑗𝑒 𝐶𝜇 = 𝐶𝑗𝑐 𝐶𝑗 (𝑉𝑅 ) =
𝑉 𝑚
�1 + 𝑉𝑅 �
𝑏𝑖

Version 9.0
BJT Impedance Scaling

Effective Base resistance


𝑅𝑜 =
(1 + 𝛽)
𝑟𝜋 + 𝑅1 || 𝑅2 || 𝑅𝑆
=
(1 + 𝛽)

𝑅𝑖𝑏 = 𝑟𝜋 + (1 + 𝛽)(Effective Emitter Resistance)


= 𝑟𝜋 + (1 + 𝛽)(𝑅𝐸 ||𝑟𝑜 )

Output Resistance Scaling

𝑅𝑜 = 𝑅 + 𝑟𝜊 (1 + 𝑔𝑚 𝑅)

𝑅𝑜 = (𝑟𝜋 ‖𝑅𝐸 ) + 𝑟𝑜 [1 + 𝑔𝑚 (𝑟𝜋 ‖𝑅𝐸 )]


≅ 𝑟𝑜 [1 + 𝑔𝑚 (𝑟𝜋 ‖𝑅𝐸 )]

𝑅𝑜 ≅ 𝑟𝑜 [1 + 𝑔𝑚 ((𝑅𝐵 + 𝑟𝜋 )‖𝑅𝐸 )]

Version 9.0
h-Parameters

v1 = h11i1 + h12 v2

i2 = h21i1 + h22 v2
∆ v1 ∆ v1
h11 = v2 =0 h12 = i1 =0
i1 v2

∆ i2 ∆ i2
h21 = v2 =0 h22 = i1 = 0
i1 v2

BJT CE Version

vbe = hieib + hre vce

ic = h feib + hoe vce

𝑟𝜋 1+𝛽 1
ℎ𝑖𝑒 = 𝑟𝑏 + 𝑟𝜋 �𝑟𝜇 ℎ𝑓𝑒 = 𝛽 ℎ𝑟𝑒 ≅ ℎ𝑜𝑒 = +
𝑟𝜇 𝑟𝜇 𝑟𝑜

y-Parameters

i1 = y11v1 + y12 v2

i2 = y21v1 + y22 v2

∆ ∆ i1
i1
y11 = v2 =0 y12 = v1 =0
v1 v2

∆ ∆ i2
i2
y21 = v2 =0 y22 = v1 =0
v1 v2

Version 9.0
Wien Bridge Oscillator
vo To sustain oscillation, the loop gain must be 3. Loop
3 gain with the two resistors is:

𝑅2
+ 1
𝑅1
Also
vo 𝑣𝑜
3 𝑣𝑥 = 𝑣𝑦 =
3

Frequency of oscillation

1
𝜔𝑜 = rad/s
𝑅𝐶

Linear Power Supplies

Full-wave bridge rectifier

𝑉𝑚
Ripple voltage with load 𝑅𝐿 𝑉𝑟 =
2𝑓𝑅𝐿 𝐶

Version 9.0

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