DISCRETE SEMICONDUCTORS

DATA SHEET

BFQ136
NPN 4 GHz wideband transistor
Product specification September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ136

DESCRIPTION PINNING
NPN transistor in a four-lead PIN DESCRIPTION
dual-emitter SOT122A envelope with page 4
1 collector
a ceramic cap. All leads are isolated
from the stud. Diffused 2 emitter 1 3
emitter-ballasting resistors and the 3 base
application of gold sandwich 4 emitter
metallization ensure an optimum
temperature profile and excellent 2
reliability properties. It features
Top view MBK187
extremely high output voltage
capabilities.
Fig.1 SOT122A.
It is primarily intended for final stages
in UHF amplifiers.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCEO collector-emitter voltage open base − 18 V
IC DC collector current − 600 mA
Ptot total power dissipation up to Tc = 100 °C − 9 W
fT transition frequency IC = 500 mA; VCE = 15 V; f = 500 MHz; 4.0 − GHz
Tj = 25 °C
GUM maximum unilateral power gain IC = 500 mA; VCE = 15 V; f = 800 MHz; 12.5 − dB
Tamb = 25 °C
Vo output voltage Ic = 500 mA; VCE = 15 V; 2.5 − V
dim = −60 dB; RL = 75 Ω;
f(p+q−r) = 793.25 MHz; Tamb = 25 °C

WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

September 1995 2
Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ136

LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 25 V
VCEO collector-emitter voltage open base − 18 V
VEBO emitter-base voltage open collector − 2 V
IC DC collector current − 600 mA
Ptot total power dissipation up to Tc = 100 °C − 9 W
Tstg storage temperature −65 150 °C
Tj junction temperature − 200 °C

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

Rth j-c thermal resistance from junction to case 11 K/W

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = 15 V − − 75 µA
hFE DC current gain IC = 500 mA; VCE = 15 V 25 75 −
Cc collector capacitance IE = ie = 0; VCB = 15 V; f = 1 MHz − 7.0 − pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 40 − pF
Cre feedback capacitance IC = 0; VCE = 15 V; f = 1 MHz − 4.0 − pF
Ccs collector-stud capacitance note 1 − 0.8 − pF
fT transition frequency IC = 500 mA; VCE = 15 V; − 4.0 − GHz
f = 500 MHz
GUM maximum unilateral power gain IC = 500 mA; VCE = 15 V; − 12.5 − dB
(note 2) f = 800 MHz; Tamb = 25 °C
Vo output voltage (see Fig.2) note 3 − 2.5 − V

Notes
1. Measured with emitter and base grounded.
2. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
G UM = 10 log -------------------------------------------------------------
2  2
- dB.
 1 – S 11   1 – S 22 

3. dim = −60 dB; IC = 500 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C;

Vp = Vo at dim = −60 dB; fp = 795.25 MHz;
Vq = Vo −6 dB; fq = 803.25 MHz;
Vr = Vo −6 dB; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.

September 1995 3
Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ136

handbook, full pagewidth V BB VCC

1.5 µF
HF choke 4.7 µF

4.7 µF
1 nF 1.8 pF 7.5 nH 20 pF
1 kΩ 14 nH
output
9 pF 9 pF 75 Ω
14 nH 6 nH
input 3.3 pF 3 pF 36 nH 36 nH
75 Ω DUT

9 pF 3 pF 9 pF
MEA261

Fig.2 Intermodulation distortion MATV test circuit.

MBB361 MEA263
120 12
handbook, halfpage handbook, halfpage

Cc
h FE
(pF)

80 8

40 4

0 0
0 40 80 120 160 0 10 20
I C (mA) V CB (V)

VCE = 15 V; Tj = 25 °C. IE = ie = 0; f = 1 MHz; Tj = 25 °C

Fig.3 DC current gain as a function of collector Fig.4 Collector capacitance as a function of

current. collector-base voltage.

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Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ136

MEA262 MEA264
5 40
handbook, halfpage handbook, halfpage
fT
G UM
(GHz)
(dB)
4
30

20

10
1

0 0
10 100 1000 0.1 1 10
I C (mA) f (MHz)

VCE = 15 V; f = 500 MHz; Tj = 25 °C IC = 500 mA; VCE = 15 V; Tamb = 25 °C.

Fig.5 Transition frequency as a function of Fig.6 Maximum unilateral power gain as a

collector current. function of frequency.

September 1995 5
Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ136

handbook, full pagewidth 1

0.5 2

0.2 1200 MHz

5
1000
800 10
+j 500
200 0.2 0.5 1 2 5 10
0 ∞
100
–j
40 10

0.2 5

0.5 2

MEA267
1
IC = 500 mA; VCE = 15 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.7 Common emitter input reflection coefficient (S11).

handbook, full pagewidth 90°

120° 40 60°

150° 30°

100

200
+ϕ
500
180° 0°
1200 MHz 10 20 30
−ϕ

150° 30°

120° 60°

90° MEA266

IC = 500 mA; VCE = 15 V; Tamb = 25 °C.

Fig.8 Common emitter forward transmission coefficient (S21).

September 1995 6
Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ136

handbook, full pagewidth 90°

120° 60°

1200 MHz

150° 1000 30°

800

500

200 +ϕ
100
180° 0°
40 0.05 0.10 0.15
−ϕ

150° 30°

120° 60°

90° MEA268

IC = 500 mA; VCE = 15 V; Tamb = 25 °C.

Fig.9 Common emitter reverse transmission coefficient (S12).

handbook, full pagewidth 1

0.5 2

0.2 5
1200 MHz
1000 10
+j 800
0.2
500 0.5 1 2 5 10
0 ∞
200
–j 100
10

0.2 40 5

0.5 2

MEA265
1
IC = 500 mA; VCE = 15 V; Tamb = 25 °C.
Zo = 50 Ω.

Fig.10 Common emitter output reflection coefficient (S22).

September 1995 7
Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ136

PACKAGE OUTLINE

Studded ceramic package; 4 leads SOT122A

D
ceramic
BeO
A metal
Q
c
N1
D1 A
D2 w1 M A M W
N

N3

M1
X

H detail X

4 α
L

0 5 10 mm
scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
N1
UNIT A b c D D1 D2 H L M1 M N N3 Q W w1 α
max.
5.97 5.85 0.18 7.50 6.48 7.24 27.56 9.91 3.18 1.66 11.82 3.86 3.38 8-32
mm 1.02 0.381 90°
4.74 5.58 0.14 7.23 6.22 6.93 25.78 9.14 2.66 1.39 11.04 2.92 2.74 UNC

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT122A 97-04-18

September 1995 8
Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ136

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1995 9