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Ordering number : ENA1366 2SK4101FS

SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET

2SK4101FS General-Purpose Switching Device


Applications
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.

Specifications
Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit


Drain-to-Source Voltage VDSS 650 V
Gate-to-Source Voltage VGSS ±30 V
IDc *1 Limited only by maximum temperature Tch=150°C 7 A
Drain Current (DC)
IDpack *2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 6.4 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 28 A
2.0 W
Allowable Power Dissipation PD
Tc=25°C (SANYO’s ideal heat dissipation condition)*3 35 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *4 EAS 194 mJ
Avalanche Current *5 IAV 6 A
Note : *1 Shows chip capability.
*2 Package limited.
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=10mH, IAV=6A
*5 L≤10mH, Single pulse
Marking : K4101

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.

www.semiconductor-sanyo.com/network
N2608QB MS IM TC-00001728 No. A1366-1/5
2SK4101FS

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 650 V
Zero-Gate Voltage Drain Current IDSS VDS=520V, VGS=0V 100 μA
Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3 5 V
Forward Transfer Admittance | yfs | VDS=10V, ID=3.5A 2.3 4.6 S
Static Drain-to-Source On-State Resistance RDS(on) ID=3.5A, VGS=10V 0.85 1.1 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 750 pF
Output Capacitance Coss VDS=30V, f=1MHz 136 pF
Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 28 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 21 ns
Rise Time tr See specified Test Circuit. 40 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 89 ns
Fall Time tf See specified Test Circuit. 31 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=7A 28.5 nC
Gate-to-Source Charge Qgs VDS=200V, VGS=10V, ID=7A 5.2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=7A 16 nC
Diode Forward Voltage VSD IS=7A, VGS=0V 0.9 1.2 V

Package Dimensions
unit : mm (typ)
7528-001

10.16 4.7
3.18 2.54
3.3

6.68
15.87
15.8

3.23

2.76
12.98

1.47 MAX
0.8

1 2 3
0.5 1 : Gate
2 : Drain
3 : Source
2.54 2.54
SANYO : TO-220F-3FS

Switching Time Test Circuit Avalanche Resistance Test Circuit


VIN VDD=200V
10V
0V L
ID=3.5A
≥50Ω
RL=57Ω
RG
VIN VOUT
D
PW=10μs 2SK4101FS
D.C.≤0.5% 10V
G 50Ω VDD
0V

P.G RGS=50Ω S 2SK4101FS

No. A1366-2/5
2SK4101FS
ID -- VDS ID -- VGS
25 25
Tc=25°C VDS=20V

20 20 Tc= --25°C
10V
Drain Current, ID -- A

Drain Current, ID -- A
15V 8V 25°C
15 15

75°C
10 10

5 5
6V
VGS=5V
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V IT12216 Gate-to-Source Voltage, VGS -- V IT12217
RDS(on) -- VGS RDS(on) -- Tc
3.0 3.0
ID=3.5A
On-State Resistance, RDS(on) -- Ω

2.5 2.5

On-State Resistance, RDS(on) -- Ω


2.0 2.0

0V
=1
Static Drain-to-Source

Static Drain-to-Source
1.5 Tc=75°C 1.5 V GS
.5 A,
=3
ID
1.0 25°C 1.0

--25°C
0.5 0.5

0 0
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 --50 --25 0 25 50 75 100 125 150
Gate-to-Source Voltage, VGS -- V IT12218 Case Temperature, Tc -- °C IT12219
| yfs | -- ID IS -- VSD
3 3
VDS=20V 2 VGS=0V
2
Forward Transfer Admittance, | yfs | -- S

10
°C 7
10 25 5
Source Current, IS -- A

7 3
C
5 25° 2
Tc= --
1.0
C
3
75° 7
5
2
3
2
1.0
°C

0.1
Tc=75

7 7
25°C

--25°C

5 5
3
3 2
2 0.01
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Drain Current, ID -- A IT12220 Diode Forward Voltage, VSD -- V IT12221
SW Time -- ID Ciss, Coss, Crss -- VDS
7 5
VDD=200V f=1MHz
5 3
VGS=10V
2
Switching Time, SW Time -- ns

3
1000 Ciss
Ciss, Coss, Crss -- pF

2 7
5

100 td (off 3
)
2
7 Coss
5 tr 100
tf
7
3 5
td(on) Crss
3
2
2

10 10
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0 10 20 30 40 50
Drain Current, ID -- A IT12222 Drain-to-Source Voltage, VDS -- V IT12223

No. A1366-3/5
2SK4101FS
VGS -- Qg ASO
10 7
VDS=200V 5
IDP=28A PW≤10μs
9 ID=7A 3 10
2
μs
10
Gate-to-Source Voltage, VGS -- V

8 0μ
10 IDc(*1)=7A s
7 1
10 ms

Drain Current, ID -- A
7 5 IDpack(*2)=6.4A
3 10 s m
6 2 DC 0m
s
1.0 op
5
7
er
ati
5 on
4 3
2
Operation in
3 this area is
0.1 limited by RDS(on).
7
2
5
3
1
2 Tc=25°C *1. Shows chip capability
0 0.01
Single pulse *2. SANYO's ideal heat dissipation condition
0 10 20 30 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 71000
Total Gate Charge, Qg -- nC IT12224 Drain-to-Source Voltage, VDS -- V IT14235
PD -- Ta PD -- Tc
2.5 40
Allowable Power Dissipation, PD -- W

Allowable Power Dissipation, PD -- W


35
2.0
30

25
1.5

20

1.0
15

10
0.5
5

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT12226 Case Temperature, Tc -- °C IT12227
EAS -- Ta
120
Avalanche Energy derating factor -- %

100

80

60

40

20

0
0 25 50 75 100 125 150 175
Ambient Temperature, Ta -- °C IT10478

No. A1366-4/5
2SK4101FS

Note on usage : Since the 2SK4101FS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.

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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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This catalog provides information as of November, 2008. Specifications and information herein are subject
to change without notice.

PS No. A1366-5/5