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CMOS IC
13843,Supply
13844,Control
13845
■ Description ■ Dimensions, mm
The FA1384X series are CMOS current mode control ICs for
off-line and DC-to-DC converters. Á SOP-8
These ICs can reduce start-up circuit loss and are optimum for
high efficiency power supplies because of the low power 8 5
dissipation achieved through changes in the CMOS fabrication
process.
6.0±0.2
3.9
These ICs can drive a power MOSFET directly.
The high-performance, compact power supply can be
designed with minimal external components .
1 4
4.9
■ Features
–0.05
+0.1
• CMOS process
1.7max
0.20
• Low-power dissipation
• Standby current 2µA (max.), start-up current 30µA (max.)
• Pulse-by-pulse current limiting
0~8°
• 5V bandgap reference 0.4±0.1 1.27±0.2
• UVLO (Undervoltage lockout) with hysteresis
• Maximum duty cycle FA13842, 13843: 96%
FA13844, 13845: 48%
• Pin-for-pin compatible with UC384X
Á DIP-8
Note: Pins are fully compatible, but characteristics are not. 8 5
When our ICs are applied to a power supply circuit
designed for other manufactures' 384X series, the
characteristics and safety features of the power supply
6.4
must be checked.
3.0min 4.5max
3.3
FA13842P 16.5V±1V 9V±1V 96% DIP
FA13842N SOP
+0.1
0.05
FA13843P 9.6V±1V 9V±1V 96% DIP 0.25 –
FA13843N SOP 7.62
2.54±0.25 0.46±0.1 0~15 5˚
FA13844P 16.5V±1V 9V±1V 48% DIP ˚ 0~1
FA13844N SOP
FA13845P 9.6V±1V 9V±1V 48% DIP
FA13845N SOP
1
FA13842, 13843, 13844, 13845
■ Block diagram
VCC 7
UVLO
VCC 5V REF 8 VREF
30V
ENB 2.5V
UVLO
OUTPUT 6 OUT
ENB
2
FA13842, 13843, 13844, 13845
Oscillator section
Item Symbol Test condition Min. Typ. Max. Unit
Oscillation frequency fOSC Tj=25˚C 49 52 55 kHz
Ta=–25 to 85˚C 47 57 kHz
Voltage stability fdv Vcc=10 to 25V ±0.25 ±1 %
Temperature stability fdt Ta=–25 to 85˚C –0.07 %/˚C
Oscillation amplitude VOSC Tj=25˚C 1.6 V
Discharge current IDISCHG Tj=25˚C 8.4 mA
3
FA13842, 13843, 13844, 13845
Output section
Item Symbol Test condition Min. Typ. Max. Unit
High-level output VOH I source=–20mA 14.5 14.75 V
I source=–100mA 12 13.5 V
Low-level output VOL I sink=20mA 0.15 0.3 V
I sink=200mA 1.5 3 V
Rise time tr CL=1nF, Tj=25˚C 40 150 ns
Fall time tf CL=1nF, Tj=25˚C 20 150 ns
PWM section
Item Symbol Test condition Min. Typ. Max. Unit
Maximum duty cycle Dmax FA13842, 13843 94 96 98 %
FA13844, 13845 47 48 50 %
Minimum duty cycle Dmin FB=5V, COMP=Open 0 %
Overall device
Item Symbol Test condition Min. Typ. Max. Unit
Standby current I CCL FA13842, 13844 Vcc=14V 2 µA
FA13843, 13845 Vcc=7V 2 µA
Start-up current I CC ST Vcc=Start threshold 12 30 µA
Operating current I CC OP 3 5 mA
Zener voltage (Vcc) VZ Icc=5mA 28 30 34 V
4
FA13842, 13843, 13844, 13845
Timing resistance vs. oscillation frequency Output dead time vs. oscillation frequency
FA13842, FA13843 FA13842, FA13843
100 100
VCC= 15V
2.2nF 470pF Ta= 25˚C
CT=10nF 470pF
2.2nF
CT=10nF
10 10
VCC= 15V
Ta= 25˚C
1 1
1 10 100 1000 10 100 1000
Oscillation frequency (kHz) Oscillation frequency (kHz)
Timing resistance vs. oscillation frequency Output dead time vs. oscillation frequency
FA13844, FA13845 FA13844, FA13845
100 100
470pF VCC= 15V
2.2nF Ta= 25˚C
90
CT=10nF
Output dead time (%)
80
RT resistance (kΩ)
70 470pF
10 2.2nF
CT=10nF
60
50
VCC= 15V
Ta= 25˚C
40
1 10 100 1000
1 10 100 1000 Oscillation frequency (kHz)
Oscillation frequency (kHz)
RT/CT discharge current vs. temperature Output max. duty cycle vs. timing resistance
FA13842, FA13843
10 100
Output maximum duty cycle (%)
9.5 90
RT/CT discharge current (mA)
9 80
8.5 70
8
60
7.5 50
40
7
–50 0 50 100 150 1 2 5 10
Temperature (˚C) RT timing resistance (kΩ)
5
FA13842, 13843, 13844, 13845
ISNS threshold voltage vs. COMP voltage COMP source current vs. COMP voltage
1200 0
VCC= 15V
1000 FB= 0V –200
OUT= off
ISNS threshold voltage (mV)
600 –600
400 –800
200 –1000
0 –1200
0 1 2 3 4 5 0 1 2 3 4 5
COMP voltage (V) COMP voltage (V)
COMP to ISNS offset voltage vs. temperature COMP source current vs. temperature
2.5 –800
VCC= 15V
COMP= 0V
COMP to ISNS offset voltage (V)
2 –900
COMP source current (µA)
–1000
1.5
–1100
1
–1200
0.5
–1300
0
–50 0 50 100 150 –1400
–50 0 50 100 150
Temperature (˚C)
Temperature (˚C)
Error amp open loop voltage gain and phase vs. VREF short circuit current vs. temperature
frequency
100 0 80
VCC= 15V
80 VREF= 0V
70
VREF short circuit current (mA)
Open loop voltage gain (dB)
60 Phase
60
Phase ( ˚)
40
Gain 50
20
0 180 40
–20 30
–40
10 100 1.0k 10k 100k 1.0M 10M 20
Frequency (Hz) 0 50 100 150
Temperature (˚C)
6
FA13842, 13843, 13844, 13845
VCC supply current vs. VCC supply voltage VCC startup current vs. VCC supply voltage
FA13842, FA13844
8
RT= 10kΩ 14
7 CT= 3.3nF Ta= 25˚C
OUT= No load
12
10
5
8
4
6
3
2 4
13842/44
13843/45
1 2
0 0
0 10 20 30 14 14.5 15 15.5 16 16.5 17
VCC voltage (V) VCC voltage (V)
Output waveform
Vcc=15V, OUT CL=1nF, Ta=25˚C Vcc=15V, OUT CL=2.2nF, Ta=25˚C
7
FA13842, 13843, 13844, 13845
MOSFET
Blanking pulses are generated in the IC during the CT ENB 2.5V
OUT
30V UVLO OUTPUT 6
discharge period. ENB
1.4V
3. Current sensing comparator and PWM latch
The “High” state of the OUT terminal begins at the time CT Set
starts charging. The OUT terminal turns to “Low” when the
peak inductor current reaches the threshold level controlled by
the error amplifier output (COMP terminal).
The inductor current is converted to a voltage by sensing COMP
ISENS
resistor RS inserted between GND and the source of a power
MOSFET. This voltage is monitored by the ISNS terminal. Reset
The maximum value of the threshold level of the current Fig. 2 FA13842, 13843
sensing comparator is held to 1V. Therefore, the maximum
peak current “Ipk(max)” is as follows:
Ipk(max)=1.0V/RS
3V
CT
4. Undervoltage lockout (UVLO) 1.4V
In order to set the IC in the operation mode before the output
stage(OUT terminal) is enabled, two under-voltage lockout Set
comparators are incorporated to monitor the power supply
voltage (VCC) and reference voltage (VREF).
The threshold level of the VCC comparator is set at 16.5V/9V for
FA13842/44 and 9.6V/9V for FA13843/45. In the standby COMP
mode, in which the VCC is under ON threshold, the power ISENS
supply current is maintained at nearly 0 (zero). However, a
maximum current of 30µA is required to change from standby Reset
mode to operating mode .
The threshold level of the VREF comparator is set at about 3.2V/
OUT
2.0V.
A 30V zener diode is connected to VCC and GND to protect the
IC against overvoltages. Fig. 3 FA13844, 13845
8
FA13842, 13843, 13844, 13845
DB T1
5. Output stage ~ +
An output stage of CMOS inverter composition is incorporated,
thereby making it possible to fully swing the gate voltage of a AC INPUT +
C1
power MOSFET to the VCC.
The output stage provides a source current of 400mA and a ~
sink current of 1A as the peak current capacity. (When VCC is
15V) R1
The output stage is held in the “Low” state in standby mode. D1
+
C2
6. Reference voltage 7
The 5.0V(±5%) bandgap reference(Tj=25˚C) is built-in.
It is possible to supply a current of about 10mA to an external FA13842 MOSFET
circuit in addition to supplying a charge current to the timing 6
Input:100V AC
4 C2=47µF
■ Design advice C2=22µF
Start-up time[sec]
3
1. Start-up circuit
A typical start-up circuit is shown in Fig. 4. 2
The AC INPUT voltage charges capacitor C2 and supplies C2=10µF
start-up current to the IC through start-up resistance R1. When 1
this voltage reaches the ON threshold voltage, the IC reverts to
0
the operation mode and electric power is supplied from the 0 200 400 600 800 1000 1200
bias winding of the transformer thereafter. Start-up resistance R1 (kΩ)
Using CMOS process, the start-up current is less than 30µA.
Fig. 5 Start-up time
When the start-up resistance is increased, the charging rate of
capacitor C2 decreases and start-up time increases. Select
the optimum values for R1 and C2.
The relation between the start-up resistance and start-up time R1
for the circuit indicated in Fig. 4 is shown in Fig. 5. D1 D2
Fig. 6 indicates a method to increase the start-up resistance to
reduce loss and shorten start-up time. The start-up time is + +
C2 C3
shortened by reducing the capacitance of C2. The bias current
7
is supplied from C3 after start-up.
FA13842
6
2. Synchronized operation with external signals
The circuit shown in Fig. 7 allows synchronized operation with
external signals. Fig. 6
Synchronized operation is started when the RT/CT terminal
voltage is raised to about 3V or higher. (Synchronized at
leading edge.)
The external synchronizing signal should be higher than the
free-run frequency. 8 REF
In the case of FA13844/45, the output frequency of the OUT
terminal is 1/2 that of the synchronizing signal frequency.
RT
Synchronized
4 OSC
CT
C4
+ 2R
R2
2
D3 ER AMP 1R
Fig. 7
9
FA13842, 13843, 13844, 13845
3. Latched shutdown DB T1
~ +
A typical circuit for latched shutdown is shown in Fig. 8.
The voltage of the OUT terminal is kept low if the voltage of the +
AC INPUT C1
COMP terminal is low. The voltage of the COMP terminal
must be set at 0.7V or less in the application temperature ~
range. (See characteristic curve on page 46 ”COMP to ISNS MOSFET
R1
offset voltage vs temperature”.) D1
The source current from the COMP terminal is less than about
+
1.3mA. C2
Tr1 5
R3
Fig. 8
7 7
8 REF 8 REF
30V 30V
4 OSC 4 OSC
Latching signal
2R SCR2 2R
+ +
2 2
ER AMP 1R ER AMP 1R
Latching signal 1 R5 1
C5
5 5
SCR1
Fig. 9 Fig. 10
10
FA13842, 13843, 13844, 13845
AC INPUT + 1 3
C1 R12
~ D5
R4
R1 Rs
Tr2
R11
D1
Tr1 Tr3
+
R6 C2 R3 R10
7 C6 C8
+
R6 C2 PC1
7
R15
FA13842 MOSFET
6
Tr5
1
Rs R16
R4 R8
Tr2
D5
R7 PC1
Tr1
R3
C6
Fig. 14
11
FA13842, 13843, 13844, 13845
4. Soft start
A soft-start circuit is shown in Fig. 15. 8 REF
An aproximate soft-start time is determined with the following
calculation. This soft-start time is defined as the time the ISNS
terminal threshold voltage increases from 0V to 1V.
MOSFET
6
FA13842 R18
3
C10 Rs
Fig. 16
8 REF
30V
4 OSC
R19
+ 2R
2
ER AMP
ON/OFF signal
Tr6 1R
1
5
Fig. 17
12
FA13842, 13843, 13844, 13845
7. Feedback circuit T1 D6
7-1 A method that does not use an internal ER AMP
+ +
A method that does not use an internal ER AMP is shown in C1 C7
Fig. 18. Connect the FB terminal to GND and connect an
optocoupler to the COMP terminal of the ER AMP output for
MOSFET
feedback control.
It is possible to obtain a precise power supply output voltage, 1
R20
because the output voltage is monitored directly on the C11
PC2 2R R21
secondary side. 2 Rs PC2
+ R
R19
Be sure to connect the FB terminal to the GND in this case. 2.5V
There is the possibility of a malfunction occuring if the FB 3 +
R22
terminal is open.
R18 C12
Fig. 20
Diverge
∆iL ∆iL´
to t1
Fig. 21
13
FA13842, 13843, 13844, 13845
operation. Ton
Typical circuits are shown in Fig. 24 and 25.
T
to t1
Fig. 23
Vcc Vin
VCC
7 VREF
UVLO
MOSFET
Vcc 5VREF 8
RT
ENB 2.5V OUT
Tr7 30V UVLO OUTPUT 6
ENB
R18
R27 CT
Rs
Output C10
RT/CT 5 GND
R25 4
ER AMP 2R OSC
FB
2
R24 R26 C13 1R 1V
1 S Q
COMP FF
R QB
3
ISNS
Fig. 24
Vcc Vin
VCC
7 VREF
UVLO
MOSFET
Vcc 5VREF 8
RT
30V ENB 2.5V OUT
Tr7 UVLO OUTPUT 6
ENB
R18
R27 CT
Rs
Output C10
RT/CT 5 GND
R25 4
ER AMP 2R OSC
FB
2
R24 R26 C13 1R 1V
1 S Q
COMP FF
R QB
3
ISNS
Fig. 25
14
FA13842, 13843, 13844, 13845
■ Application circuit
YG902C L1
DB T1 D6 4700µF 2 3.3µH
~ + 16V
0~4A
C1 + C16 R27
AC80~264V 0.022µF 100kΩ
400V/220µF
+ + C17 +
~ C7 C18
D9 1000µF
ERA22-10
R1 GND
560kΩ C15
470pF
MOSFET
2SK2101 D10 R28 R20
ERA22-10 1kΩ 1.2kΩ
R29 R32 R21
R30 Rs PC2 2.2kΩ 10kΩ
4.7kΩ 0.33Ω
33Ω
R22 560Ω
R31 D11
100Ω C12
ERA91-02 0.1µF
C2 IC
FA13842 VR1
RT VCC 22µF + 5k
7 VREF
8.2kΩ UVLO VCC 5VREF 8
30V D1
ENB 2.5V OUT
UVLO OUTPUT ERA91-02
6
ENB
COMP
1
GND
RT/CT 5
4 OSC
CT C11 2R
2200pF 1000pF FB 2
1R 1V S Q
PC2 R19 FF
1kΩ ISNS3 R QB
R18 C14
C10 1kΩ
100pF 0.1µF
15