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Chemical Visualization of a GaN p-n junction by XPS

Data · September 2015

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Deniz Caliskan Hikmet Sezen

Bilkent University Helmholtz-Zentrum Berlin
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Ekmel Ozbay Sefik Suzer

Bilkent University Bilkent University
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SUPPLEMENTARY INFORMATION

Chemical Visualization of a GaN p-n junction by XPS

Deniz Caliskan,a Hikmet Sezen,b Ekmel Ozbay,a Sefik Suzer*,b
aNanotechnology Research Center, Department of Electrical and Electronics Engineering and
Department of Physics, Bilkent University, 06800, Ankara, Turkey
bDepartment of Chemistry, Bilkent University, 06800 Ankara, Turkey

*Corresponding author (suzer@fen.bilkent.edu.tr)

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Figure S1. Measured I-V curve of the middle device.

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Figure S2. XPS line scans. Ga2p3/2 peak recorded across the junction in the line scan mode
under -4 V Reverse Bias and the equivalent circuit model.

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 Equivalent Circuit and Computations

NO ILLUMINATION

I (overall) = 0.7 mA (see Figure S1)

4.0 V = I *R= 0.7 x10-3 A * RT→ RT= 5.7 kΩ RT= Rn + Rj+ Rp

IR drop [p-region, Figure 5a] = 0.6 V = 0.7 x10-3 A *Rp→Rp= 0.86 kΩ

Assuming Rn to be negligible →Rj= 4.8 kΩ

UNDER 405 nm ILLUMINATION

Assuming Rp does not change i.e. Rp= 0.86 kΩ

IR drop [p-region, Figure 4a,c] = 1.1 V = Iphoto (overall) * 0.86 kΩ→Iph= 1.28 mA

4.0 V=I * R=1.28 x10-3A * RT(photo)→ RT(photo)= 3.1 kΩ and Rj(photo) =2.3kΩ

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