2N/SST5484 Series

Vishay Siliconix

N-Channel JFETs

2N5484 SST5484
2N5485 SST5485
2N5486 SST5486

PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
2N/SST5484 −0.3 to −3 −25 3 1
2N/SST5485 −0.5 to −4 −25 3.5 4
2N/SST5486 −2 to −6 −25 4 8

FEATURES BENEFITS APPLICATIONS

D Excellent High-Frequency Gain:
Gps 13 dB (typ) @ 400 MHz − 5485/6
D Very Low Noise: 2.5 dB (typ) @
400 MHz − 5485/6
D Very Low Distortion
D High AC/DC Switch Off-Isolation
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches

DESCRIPTION
The 2N/SST5484 series consists of n-channel JFETs
designed to provide high-performance amplification,
especially at high frequencies up to and beyond 400 MHz.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), packages provide low-cost options and are
available with tape-and-reel to support automated assembly
(see Packaging Information).

TO-226AA TO-236
(TO-92) (SOT-23
)

D 1 D 1
3 G
S 2 S 2

G 3
Top View
SST5484 (H4)*
Top View SST5485 (H5)*
2N5484 SST5486 (H6)*
2N5485
2N5486 *Marking Code for TO-236

For applications information see AN102 and AN105.

Document Number: 70246 www.vishay.com

S-50148—Rev. G, 24-Jan-05 1
2N/SST5484 Series
Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 V Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C Notes
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 150_C a. Derate 2.8 mW/_C above 25_C

SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED)

Limits
2N5484 2N5485 2N5486

Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit
Static
Gate-Source
V(BR)GSS IG = −1
A , VDS = 0 V −35 −25 −25 −25
Breakdown Voltage V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 10 nA −0.3 −3 −0.5 −4 −2 −6
Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 1 5 4 10 8 20 mA
VGS = −20 V, VDS = 0 V −0.002 −1 −1 −1
Gate Reverse Current IGSS nA
TA = 100_C −0.2 −200 −200 −200
Gate Operating Currentc IG VDG = 10 V, ID = 1 mA −20 pA
Gate-Source
VGS(F) IG = 10 mA , VDS = 0 V 0.8 V
Forward Voltagec

Dynamic
Common-Source
gfs 3 6 3.5 7 4 8 mS
Forward TransconductanceNO TAG VDS = 15 V, VGS = 0 V
Common-Source f = 1 kHz
gos 50 60 75
S
Output ConductanceNO TAG
Common-Source
Ciss 2.2 5 5 5
Input Capacitance
Common-Source VDS = 15 V, VGS = 0 V
Crss 0.7 1 1 1 pF
Reverse Transfer Capacitance f = 1 MHz
Common-Source
Coss 1 2 2 2
Output Capacitance
Equivalent Input VDS = 15 V, VGS = 0 V nV⁄
en 10
Noise Voltagec f = 100 Hz √Hz

High-Frequency
Common-Source f = 100 MHz 5.5 2.5
Yfs(RE)
f (RE) mS
Transconductanced f = 400 MHz 5.5 3 3.5

Common-Source VDS = 15 V f = 100 MHz 45 75

Yos(RE)
(RE)
S
Output Conductanced VGS = 0 V f = 400 MHz 65 100 100

Common-Source f = 100 MHz 0.05 0.1

Yis(RE)
i (RE) mS
Input Conductanced f = 400 MHz 0.8 1 1
VDS = 15 V, ID = 1 mA
20 16 25
f = 100 MHz
C
Common-Source
S Power
P G i d
Gain Gps f = 100 MHz 21 18 30 18 30
VDS = 15 V
ID = 4 mA f = 400 MHz 13 10 20 10 20
VDS = 15 V, VGS = 0 V
0.3 2.5 2.5 2.5 dB
RG = 1 M , f = 1 kHz
VDS = 15 V, ID = 1 mA
2 3
g d
Noise Figure NF RG = 1 k , f = 100 MHz
VDS = 15 V f = 100 MHz 1 2 2
ID = 4 mA
RG = 1 k f = 400 MHz 2.5 4 4

www.vishay.com Document Number: 70246

2 S-50148—Rev. G, 24-Jan-05
 2N/SST5484 Series
Vishay Siliconix

SPECIFICATIONS FOR SST SERIES (TA = 25_C UNLESS OTHERWISE NOTED)

Limits
SST5484 SST5485 SST5486

Parameter Symbol Test Conditions Typb Min Max Min Max Min Max Unit
Static
Gate-Source
V(BR)GSS IG = −1
A , VDS = 0 V −35 −25 −25 −25
Breakdown Voltage V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 10 nA −0.3 −3 −0.5 −4 −2 −6
Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 1 5 4 10 8 20 mA
VGS = −20 V, VDS = 0 V −0.002 −1 −1 −1
Gate Reverse Current IGSS nA
TA = 100_C −0.2 −200 −200 −200
Gate Operating Currentc IG VDG = 10 V, ID = 1 mA −20 pA
Gate-Source
VGS(F) IG = 10 mA , VDS = 0 V 0.8 V
Forward Voltagec

Dynamic
Common-Source
gfs 3 6 3.5 7 4 8 mS
Forward TransconductanceNO TAG VDS = 15 V, VGS = 0 V
Common-Source f = 1 kHz
gos 50 60 75
S
Output ConductanceNO TAG
Common-Source
Ciss 2.2
Input Capacitance
Common-Source
Reverse Transfer Crss VDS = 15 V, VGS = 0 V 0.7 pF
Capacitance f = 1 MHz

Common-Source
Coss 1
Output Capacitance
Equivalent Input VDS = 15 V, VGS = 0 V nV⁄
en 10
Noise Voltagec f = 100 Hz √Hz

High-Frequency
Common-Source f = 100 MHz 5.5
Yfs
f mS
Transconductance f = 400 MHz 5.5

Common-Source VDS = 15 V f = 100 MHz 45

Yos
S
Output Conductance VGS = 0 V f = 400 MHz 65

Common-Source f = 100 MHz 0.05

Yis
i mS
Input Conductance f = 400 MHz 0.8
VDS = 15 V, ID = 1 mA 20
f = 100 MHz
Common-Source
Gps f = 100 MHz 21
Power Gain VDS = 15 V
ID = 4 mA f = 400 MHz 13
VDS = 15 V, VGS = 0 V
0.3 dB
RG = 1 M , f = 1 kHz
VDS = 15 V, ID = 1 mA
2
Noise Figure
g NF RG = 1 k , f = 100 MHz
VDS = 15 V f = 100 MHz 1
ID = 4 mA
RG = 1 k f = 400 MHz 2.5
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH
b. Pulse test: PW v300
s duty cycle v3%.
c. This parameter not registered with JEDEC.
d. Not a production test.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

Document Number: 70246 www.vishay.com

S-50148—Rev. G, 24-Jan-05 3
2N/SST5484 Series
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance On-Resistance and Output Conductance

vs. Gate-Source Cutoff Voltage vs. Gate-Source Cutoff Voltage
20 10 500 100

rDS @ ID = 300
A, VGS = 0 V

rDS(on) − Drain-Source On-Resistance ( Ω )

gfs − Forward Transconductance (mS)
gos @ VDS = 10 V, VGS = 0 V
IDSS − Saturation Drain Current (mA)

IDSS

gos − Output Conductance (µS)

16 8 400 f = 1 kHz 80

gfs 6 rDS 60
12 300
gos

8 4 200 40

4 IDSS @ VDS = 10 V, VGS = 0 V 2 100 20

gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz

0 0 0 0
0 −2 −4 −6 −8 −10 0 −2 −4 −6 −8 −10
VGS(off) − Gate-Source Cutoff Voltage (V) VGS(off) − Gate-Source Cutoff Voltage (V)

Common-Source Forward
Gate Leakage Current Transconductance vs. Drain Current
100 nA 10
ID = 5 mA VGS(off) = −3 V VDS = 10 V
f = 1 kHz
10 nA 1 mA
gfs − Forward Transconductance (mS)

8
0.1 mA
1 nA TA = 125_C
TA = −55_C
IG − Gate Leakage

100 pA IGSS @
ID = 5 mA 125_C 25_C
4
10 pA 1 mA
125_C
0.1 mA
TA = 25_C 2
1 pA
IGSS @ 25_C

0.1 pA 0
0 4 8 12 16 20 0.1 1 10
VDG − Drain-Gate Voltage (V) ID − Drain Current (mA)

Output Characteristics Output Characteristics

10 15
VGS(off) = −2 V VGS(off) = −3 V

8 12
VGS = 0 V VGS = 0 V
ID − Drain Current (mA)

ID − Drain Current (mA)

6 −0.2 V 9 −0.3 V

−0.4 V −0.6 V

4 6 −0.9 V
−0.6 V
−1.2 V
−0.8 V
−1.0 V −1.5 V
2 3
−1.2 V
−1.8 V

0 −1.4 V 0
0 2 4 6 8 10 0 2 4 6 8 10
VDS − Drain-Source Voltage (V) VDS − Drain-Source Voltage (V)

www.vishay.com Document Number: 70246

4 S-50148—Rev. G, 24-Jan-05
 2N/SST5484 Series
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Transfer Characteristics Transfer Characteristics

10 10
VGS(off) = −2 V VDS = 10 V VGS(off) = −3 V VDS = 10 V

8 8
TA = −55_C
TA = −55_C
ID − Drain Current (mA)

ID − Drain Current (mA)

25_C
6 25_C 6
125_C

4 125_C 4

2 2

0 0
0 −0.4 −0.8 −1.2 −1.6 −2 0 −0.6 −1.2 −1.8 −2.4 −3
VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V)

Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltage

10 10
VGS(off) = −2 V VDS = 10 V VGS(off) = −3 V VDS = 10 V
f = 1 kHz f = 1 kHz
gfs − Forward Transconductance (mS)

gfs − Forward Transconductance (mS)

8 8

TA = −55_C TA = −55_C
6 25_C 6 25_C

4 125_C 4
125_C

2 2

0 0
0 −0.4 −0.8 −1.2 −1.6 −2 0 −0.6 −1.2 −1.8 −2.4 −3
VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V)

On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current
300 100
TA = 25_C g fs R L
AV + 1 ) R g
rDS(on) − Drain-Source On-Resistance ( Ω )

L os
240 80 Assume VDD = 15 V, VDS = 5 V
10 V
VGS(off) = −2 V RL + ID
AV − Voltage Gain

180 60

−3 V
120 40
VGS(off) = −2 V

60 20
−3 V

0 0
0.1 1 10 0.1 1 10
ID − Drain Current (mA) ID − Drain Current (mA)

Document Number: 70246 www.vishay.com

S-50148—Rev. G, 24-Jan-05 5
2N/SST5484 Series
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Common-Source Input Capacitance Common-Source Reverse Feedback

vs. Gate-Source Voltage Capacitance vs. Gate-Source Voltage
5 3
f = 1 MHz f = 1 MHz

Crss − Reverse Feedback Capacitance (pF)

4 2.4
Ciss − Input Capacitance (pF)

3 1.8
VDS = 0 V VDS = 0 V

2 1.2

10 V
10 V
1 0.6

0 0
0 −4 −8 −12 −16 −20 0 −4 −8 −12 −16 −20
VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V)

Input Admittance Forward Admittance

100 100
TA = 25_C TA = 25_C
VDS = 15 V VDS = 15 V
VGS = 0 V VGS = 0 V
Common Source Common Source
bis

10 10
gis gfs
(mS)

(mS)

−bfs

1 1

0.1 0.1
100 200 500 1000 100 200 500 1000
f − Frequency (MHz) f − Frequency (MHz)

Reverse Admittance Output Admittance

10 10
TA = 25_C TA = 25_C
VDS = 15 V VDS = 15 V
VGS = 0 V VGS = 0 V bos
−brs
Common Source Common Source

1 1
(mS)

(mS)

−grs
0.1 0.1
gos

0.01 0.01
100 200 500 1000 100 200 500 1000
f − Frequency (MHz) f − Frequency (MHz)

www.vishay.com Document Number: 70246

6 S-50148—Rev. G, 24-Jan-05
 2N/SST5484 Series
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current
20 20
VGS(off) = −3 V VDS = 10 V VGS(off) = −3 V VDS = 10 V
f = 1 kHz
16 16
Hz

gos − Output Conductance (µS)

TA = −55_C
en − Noise Voltage nV /

12 12

25_C
8 8

125_C
ID = 5 mA
4 4

ID = IDSS

0 0
10 100 1k 10 k 100 k 0.1 1 10
f − Frequency (Hz) ID − Drain Current (mA)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70246.

Document Number: 70246 www.vishay.com

S-50148—Rev. G, 24-Jan-05 7
 Legal Disclaimer Notice
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Disclaimer

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Revision: 18-Jul-08 1