CEP75N06/CEB75N06

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

60V, 87A, RDS(ON) = 12mΩ @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

D
Lead free product is acquired.

TO-220 & TO-263 package.

D
G
G
G D
S S
CEB SERIES CEP SERIES
TO-263(DD-PAK) TO-220 S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter Symbol Limit Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous@ TC = 25 C 87 A
ID
@ TC = 100 C 61 A
Drain Current-Pulsed a IDM 348 A
Maximum Power Dissipation @ TC = 25 C 200 W
PD
- Derate above 25 C 1.3 W/ C
Single Pulsed Avalanche Energy d EAS 325 mJ
Single Pulsed Avalanche Current d
IAS 50 A
Operating and Store Temperature Range TJ,Tstg -55 to 175 C

Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Case RθJC 0.75 C/W
Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W

Rev 5. 2010.Nov.
Details are subject to change without notice . http://www.cetsemi.com
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 CEP75N06/CEB75N06
Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter Symbol Test Condition Min Typ Max Units

Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 60 V
Zero Gate Voltage Drain Current IDSS VDS = 58V, VGS = 0V 25 µA
Gate Body Leakage Current, Forward IGSSF VGS = 20V, VDS = 0V 100 nA
Gate Body Leakage Current, Reverse IGSSR VGS = -20V, VDS = 0V -100 nA
On Characteristics b
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2 4 V
Static Drain-Source
RDS(on) VGS = 10V, ID = 50A 10 12 mΩ
On-Resistance
Dynamic Characteristics c
Forward Transconductance gFS VDS = 25V, ID = 50A 21 S
Input Capacitance Ciss 3650 pF
VDS = 25V, VGS = 0V,
Output Capacitance Coss f = 1.0 MHz 735 pF
Reverse Transfer Capacitance Crss 40 pF
Switching Characteristics c
Turn-On Delay Time td(on) 24 48 ns
Turn-On Rise Time tr VDD = 30V, ID = 50A, 5.5 11 ns
VGS = 10V, RGEN = 3.6Ω
Turn-Off Delay Time td(off) 50 100 ns
Turn-Off Fall Time tf 12 24 ns
Total Gate Charge Qg 67.9 90.3 nC
VDS = 48V, ID = 50A,
Gate-Source Charge Qgs VGS = 10V 15 nC
Gate-Drain Charge Qgd 20.4 nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current IS 87 A
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 50A 1.3 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 260µH, IAS = 50A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C

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 CEP75N06/CEB75N06
180 140
VGS=10,9,8,7V 25 C
150
ID, Drain Current (A)

ID, Drain Current (A)

105
120
VGS=6V
90 70

60 VGS=5V TJ=125 C
35
30
-55 C
0 0
0 1 2 3 4 5 6 0 2 4 6 8 10

VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

4800 2.6
ID=50A
RDS(ON), On-Resistance(Ohms)

VGS=10V
4000 Ciss 2.2
C, Capacitance (pF)

RDS(ON), Normalized

3200 1.8

2400 1.4

1600 1.0

Coss
800 0.6

Crss
0 0.2
0 5 10 15 20 25 -100 -50 0 50 100 150 200

VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C)

Figure 3. Capacitance Figure 4. On-Resistance Variation

with Temperature
1.3
VDS=VGS
Gate-Source Threshold Voltage

VGS=0V
IS, Source-drain current (A)

1.2 ID=250µA
VTH, Normalized

1.1 1
10
1.0

0.9
0
10
0.8

0.7

0.6 -1
10
-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4

TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation Figure 6. Body Diode Forward Voltage

with Temperature Variation with Source Current

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 CEP75N06/CEB75N06
10
VDS=48V
VGS, Gate to Source Voltage (V)

3
10 RDS(ON)Limit
ID=50A
8

ID, Drain Current (A)

2 100µs
10
6
1ms
10ms
4 DC
1
10

2
TC=25 C
TJ=175 C
0 Single Pulse
0 10
0 20 40 60 80 -1 0 1 2
10 10 10 10

Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge Figure 8. Maximum Safe

Operating Area

VDD
t on toff
RL td(on) tr td(off) tf
V IN 90%
90%
D VOUT
VGS VOUT 10% INVERTED 10%
RGEN G
90%
50% 50%
S VIN
10%

PULSE WIDTH

Figure 9. Switching Test Circuit Figure 10. Switching Waveforms

Transient Thermal Impedance

0
10
r(t),Normalized Effective

D=0.5

0.2

-1 0.1 PDM
10
0.05 t1
0.02 t2
0.01
1. RθJC (t)=r (t) * RθJC
Single Pulse 2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-2
10
-2 -1 0 1 2 3 4
10 10 10 10 10 10 10

Square Wave Pulse Duration (msec)

Figure 11. Normalized Thermal Transient Impedance Curve