AO4842

30V Dual N-Channel MOSFET

General Description Product Summary

The AO4842 uses advanced trench technology to VDS (V) = 30V
provide excellent RDS(ON) and low gate charge. The ID = 7.7A (VGS = 10V)
two MOSFETs make a compact and efficient switch RDS(ON) < 21mΩ (VGS = 10V)
and synchronous rectifier combination for use in RDS(ON) < 30mΩ (VGS = 4.5V)
buck converters.

100% UIS Tested

100% Rg Tested

SOIC-8

Top View Bottom View D1 D2

Top View

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 D1 G1 G2
4 5
S1 S2
Pin1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 7.7
Current AF TA=70°C ID 6.5 A
Pulsed Drain Current B IDM 64
TA=25°C 2
PD W
Power Dissipation TA=70°C 1.44
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 50 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 82 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 41 50 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4842

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 0.004 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 2.1 2.6 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 64 A
VGS=10V, ID=7.7A 16.8 21
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 24 29
VGS=4.5V, ID=5A 23.4 30 mΩ
gFS Forward Transconductance VDS=5V, ID=7.7A 20 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 2.4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 373 448 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 67 pF
Crss Reverse Transfer Capacitance 41 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.8 2.8 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 7.2 11 nC
Qg(4.5V) Total Gate Charge 3.5 nC
VGS=10V, VDS=15V, ID=7.7A
Qgs Gate Source Charge 1.3 nC
Qgd Gate Drain Charge 1.7 nC
tD(on) Turn-On DelayTime 4.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.95Ω, 2.7 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 14.9 ns
tf Turn-Off Fall Time 2.9 ns
trr Body Diode Reverse Recovery Time IF=7.7A, dI/dt=100A/µs 10.5 12.6 ns
Qrr Body Diode Reverse Recovery Charge IF=7.7A, dI/dt=100A/µs 4.5 nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.

Rev5: May. 2012

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4842

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 15
10V 5V
6V VDS=5V
50 VDS=5V
12

40
6V 4.5V 9
ID (A)

ID(A)
30
125°C
6
20 VGS=3.5V 125°C
25°C
10 3
25°

0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

40 1.8
VGS=10V
Normalized On-Resistance

35
VGS=4.5V 1.6

30 VGS=4.5V
Ω)
RDS(ON) (mΩ

1.4 VGS=4.5V
25
1.2
20 VGS=10V

15 1
VGS=10V

10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

60 1.0E+01
ID=7.5A ID=7.7A
50 1.0E+00

1.0E-01
Ω)
RDS(ON) (mΩ

40 125°C
125°C
IS (A)

125° 1.0E-02
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
25°C
1.0E-03
OUT OF20SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C 1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C
10
1.0E-05
2 4 6 8 10
0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4842

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 600
VDSV=15V
DS=15V
ID=7.7A
ID=7.5A 500
8
Ciss

Capacitance (pF)
400
VGS (Volts)

6
300
4
200 Coss
Coss
2
100
Crss
Crss
0 0
0 2 4 6 8 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 50
10µs TJ(Max)=150°C
TA=25°C
RDS(ON) 40
10.0 10µs
limited VGS=10V, VDS=15V, ID=7.4A
100µs
ID (Amps)

Power (W)

30
1.0 1ms
10ms 20
VGS=10V, VDS=15V,
0.1s RL=2.0Ω, RGEN=3Ω
0.1 TJ(Max)=150°C DC
TA=25°C 10s 10

0.0
0
0.01 0.1 1 IF=7.4A,10dI/dt=100A/µs
100
VDS (Volts) 0.001 0.01 0.1 1 10 100 1000
IF=7.4A, dI/dt=100A/µs Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

0.1 PD

Single Pulse Ton

T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd. www.aosmd.com