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August 2015
FCPF400N80Z
N-Channel SuperFET® II MOSFET
800 V, 14 A, 400 mΩ
Features Description
• Typ. RDS(on) = 340 mΩ SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
• Ultra Low Gate Charge (Typ. Qg = 43 nC) high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
• Low Eoss (Typ. 4.1 uJ @ 400 V)
and lower gate charge performance. This technology is tailored
• Low Effective Output Capacitance (Typ. Coss(eff.) = 138 pF)
to minimize conduction loss, provide superior switching perfor-
• 100% Avalanche Tested mance, dv/dt rate and higher avalanche energy. In addition,
• RoHS Compliant internal gate-source ESD diode allows to withstand over 2kV
• ESD Improved Capability HBM surge stress. Consequently, SuperFET II MOSFET is very
suitable for the switching power applications such as Audio,
Applications Laptop adapter, Lighting, ATX power and industrial power appli-
cations.
• AC-DC Power Supply
• LED Lighting
G
G
D
S
TO-220F
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol Parameter FCPF400N80Z Unit
VDSS Drain to Source Voltage 800 V
- DC ±20
VGSS Gate to Source Voltage V
- AC (f >1 Hz) ±30
o
- Continuous (TC = 25 C) 14*
ID Drain Current A
- Continuous (TC = 100oC) 8.9*
IDM Drain Current - Pulsed (Note 1) 33* A
EAS Single Pulsed Avalanche Energy (Note 2) 339 mJ
IAR Avalanche Current (Note 1) 2.2 A
EAR Repetitive Avalanche Energy (Note 1) 0.36 mJ
MOSFET dv/dt 100
dv/dt V/ns
Peak Diode Recovery dv/dt (Note 3) 20
o
(TC = 25 C) 35.7 W
PD Power Dissipation
- Derate Above 25oC 0.29 W/oC
o
TJ, TSTG Operating and Storage Temperature Range -55 to +150 C
Maximum Lead Temperature for Soldering, o
TL 300 C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature, with heatsink.
Thermal Characteristics
Symbol Parameter FCPF400N80Z Unit
RθJC Thermal Resistance, Junction to Case, Max. 3.5 o
C/W
RθJA Thermal Resistance, Junction to Ambient, Max. 62.5
Off Characteristics
BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25°C 800 - - V
ΔBVDSS Breakdown Voltage Temperature o
ID = 1 mA, Referenced to 25 C - 0.8 - V/oC
/ ΔTJ Coefficient
VDS = 800 V, VGS = 0 V - - 25
IDSS Zero Gate Voltage Drain Current μA
VDS = 640 V, TC = 125oC - - 250
IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±10 μA
On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 1.1 mA 2.5 - 4.5 V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 5.5 A - 0.34 0.4 Ω
gFS Forward Transconductance VDS = 20 V, ID = 5.5 A - 12 - S
Dynamic Characteristics
Ciss Input Capacitance - 1770 2350 pF
VDS = 100 V, VGS = 0 V,
Coss Output Capacitance - 51 70 pF
f = 1 MHz
Crss Reverse Transfer Capacitance - 0.5 - pF
Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz - 28 - pF
Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 138 - pF
Qg(tot) Total Gate Charge at 10V VDS = 640 V, ID = 11 A, - 43 56 nC
Qgs Gate to Source Gate Charge VGS = 10 V - 8.6 - nC
Qgd Gate to Drain “Miller” Charge (Note 4) - 17 - nC
ESR Equivalent Series Resistance f = 1 MHz - 2.3 - Ω
Switching Characteristics
td(on) Turn-On Delay Time - 20 50 ns
tr Turn-On Rise Time VDD = 400 V, ID = 11 A, - 12 34 ns
td(off) Turn-Off Delay Time VGS = 10 V, Rg = 4.7 Ω - 51 112 ns
tf Turn-Off Fall Time (Note 4) - 2.6 15 ns
5.5V
10
10
o
150 C
o
25 C
*Notes:
o
1. 250μs Pulse Test -55 C
o
2. TC = 25 C
2 1
1 10 20 3 4 5 6 7
VDS, Drain to Source Voltage[V] VGS, Gate toSource Voltage[V]
10
0.5 o
150 C
RDS(ON) [Ω],
VGS = 10V o
25 C
0.4 1
VGS = 20V
0.3
0.2 0.1
0 6 12 18 24 30 35 0.2 0.4 0.6 0.8 1.0 1.2 1.4
ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]
VDS = 160V
1000 Ciss 8
VDS = 400V
Capacitances [pF]
VDS = 640V
100 6
Coss
10 *Note: 4
1. VGS = 0V
2. f = 1MHz
1 Ciss = Cgs + Cgd (Cds = shorted) 2
Coss = Cds + Cgd
Crss
Crss = Cgd
0.1 0
0.1 1 10 100 1000 0 15 30 45
VDS, Drain to Source Voltage [V] Qg, Total Gate Charge [nC]
RDS(on), [Normalized]
2.0
1.0 1.5
1.0
0.9
0.5
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
100 14
10μs
12
100μs
ID, Drain Current [A]
10
10
ID, Drain Current [A]
1ms
8
10ms
1
Operation in This Area 6
DC
is Limited by RDS(on)
*Notes: 4
0.1
o
1. TC = 25 C
o 2
2. TJ = 150 C
3. Single Pulse
0.01 0
0.1 1 10 100 1000 25 50 75 100 125 150
o
VDS, Drain to Source Voltage [V] TC, Case Temperature [ C]
10
8
EOSS, [μJ]
0
0 200 400 600 800
VDS, Drain to Source Voltage [V]
5
ZθJC(t), Thermal Response [oC/W]
0.5
1
0.2
0.1
PDM
0.05
0.1 t1
0.02 t2
0.01 *Notes:
o
1. ZθJC(t) = 3.5 C/W Max.
Single pulse 2. Duty Factor, D= t1/t2
0.01 3. TJM - TC = PDM * ZθJC(t)
0.005
-5 -4 -3 -2 -1 0 1 2
10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]
RL VDS
VDS 90%
VGS VDD
RG
10%
VGS
V
10V
GS
DUT
td(on) tr td(off)
tf
t on t off
VGS
VDS
I SD
L
Driver
RG
Same Type
as DUT VDD
IRM
VSD VDD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
AUTHORIZED USE
Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary
levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: (1) automotive
or other transportation, (2) military/aerospace, (3) any safety critical application – including life critical medical equipment – where the failure of the Fairchild product
reasonably would be expected to result in personal injury, death or property damage. Customer’s use of this product is subject to agreement of this Authorized Use
policy. In the event of an unauthorized use of Fairchild’s product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be
subject to Fairchild’s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed by both Parties.
ANTI-COUNTERFEITING POLICY
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under Terms of Use
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applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change
Advance Information Formative / In Design
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Preliminary First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
No Identification Needed Full Production
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
Obsolete Not In Production
The datasheet is for reference information only.
Rev. I77
Authorized Distributor
Fairchild Semiconductor:
FCPF400N80Z