Física de semiconductores

Task cycle 2

WILLIAM CAMILO SALCEDO ESTUPIÑAN

CODE:1057578237

Tutor

Iván Camilo Nieto Sánchez

GROUP

299002_6

Universidad Nacional Abierta y distancia

UNAD

CEAD SOGAMOSO

2018
Objectives

 The activity aims to learn and understand concepts related to

semiconductor materials and their behavior.

 Understand the phenomena associated with direct and inverse

polarization of diodes.

 Apply the knowledge acquired by developing a simulation of

half wave and full wave rectifiers and explain their operation.

 Understand that it is a union P-N.

 Indentify the devices of unión P-N and their operation.

 Explicate the operation of wave rectifier devices and perform their

simulation.
Individual activities:

 The references listed in knowledge environment, and using

other source like UNAD library, find and list different unipolar
and bipolar devices and share it in the work forum.

Below I list the list of devices based on unipolar and bipolar

semiconductors:

- Rectifying diodes

- Zener diodes

- Varicap diodes

- Diodes Gunn Impatt

- Voltage suppressor diodes

- Constant current diodes

- Tunnel diodes

- Shottky diodes

- Led Diodes

- Pin diodes

- Temperature sensitive diodes

- Photodiodes

- Simple NPN and PNP transistors

- NPN and PNP transistors with collector attached to cover

- UJT transistors

- Avalanche transistors

- Shottky transistors

- JFET transistors channel n and p

- Multi-emitter transistors

- Darlington transistors

- Simple thyristors
- Reverse conduction thyristors

- Triac

- Diac

- MOSFET transistors type impoverishment or enrichment

- MOSFET transistors in general

 When you have at least five different devices, select one and
write an article to describe their features and different
application.
 Design and build/simulate a circuit to demonstrate its behavior.
 Share the article written in the work forum to your group
mates.
 As in the forum you’ll find other articles, read and feedback
them to have another point of view. If you need to correct your
article (according to the feedback), it’s the right time to do it.
 Remember that your feedback must show an adequate lecture
of the document read and argument your position.

Article William Salcedo.

The MOSFET transistor

The MOSFET transistor (acronym for Metal-Oxide-Semiconductor

Field-Effect Transistor) is the most important semiconductor device
from the point of view of the large-scale production of devices and
integrated circuits (memories, microprocessors). The first MOSFET
transistor was manufactured in 1960 on a experimental. It is a
unipolar device with current-voltage characteristics analogous to
those of the JFET.

The MOSFET is a device of four terminals called source (S, Source),

drain (D, Drain), gate (G, Gate) and substrate, the substrate is
usually connected internally to the source terminal and for this reason
you can find devices MOSFET with three terminals.

The MOSFET transistor began to disperse in 1925 but it was not until
1960 that the first MOSFET transistor was built by the Korean-
American Dawon Kahng and the Egyptian Martin Atalla, both
engineers from the Bell Laboratories.

The MOSFET has a completely different structure than the bipolar

junction transistor, and was created by placing an insulating layer on
the surface of a semiconductor and then placing a metallic gate
electrode on the insulator. Crystalline silicon was used for the base
semiconductor, and a layer of silicon dioxide created through thermal
oxidation, as an insulator. The silicon MOSFET did not generate
electron traps located between the interface, between the silicon and
the native oxide layer, and for this reason was free of dispersion and
blocking of carriers that limited the performance of the field effect
transistors previous.