UNISONIC TECHNOLOGIES CO.

, LTD
BU941 NPN SILICON TRANSISTOR

NPN POWER DARLINGTON

HIGH VOLTAGE IGNITION
COIL DRIVER

„ FEATURES
* NPN Darlington
* Integrated antiparallel collector-emitter diode
„ APPLICATIONS
* High ruggedness electric ignitions

„ INTERNAL SCHEMATIC DIAGRAM

*Pb-free plating product number: BU941L
C
(2)

B (1)

(3)
E

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Normal Lead Free Plating 1 2 3
BU941-T3P-T BU941L-T3P-T TO-3P B C E Tube
BU941-TA3-T BU941L-TA3-T TO-220 B C E Tube
BU941-TQ2-R BU941L-TQ2-R TO-263 B C E Tape Reel
BU941-TQ2-T BU941L-TQ2-T TO-263 B C E Tube

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BU941 NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNIT
Collector-Emitter Voltage VCES 500 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 15 A
Collector Peak Current ICM 30 A
Base Current IB 1 A
Base Peak Current IBM 5 W
TO-3P 155 W
Total Power Dissipation (Tc=25°C) TO-220 PD 150 W
TO-263 65 W
Junction Temperature TJ +175 °C
Storage Temperature TSTG -65 ~ +175 °C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Sustaining Ic=100mA, Vclamp=400V, L=10mH
VCEO(SUS)* 400 V
Voltage (see Fig. 1)
VCE=500V, VBE=0 100 µA
Collector Cut-Off Current ICES
VCE=500V, VBE=0, TJ=125°C 0.5 mA
VCE=450V, IB=0 100 µA
Collector Cut-Off Current ICEO
VCE=450V, IB=0, TJ=125°C 0.5 mA
Emitter Cut-off Current IEBO VEB=5V, Ic=0 20 mA
IC=8A, IB=100mA 1.6
Collector-Emitter Saturation
VCE(SAT)* IC=10A, IB=250mA 1.8 V
Voltage
IC=12A, IB=300mA 2
IC=8A, IB=100mA 2.2
Base-Emitter Saturation Voltage VBE(SAT)* IC=10A, IB=250mA 2.5 V
IC=12A, IB=300mA 2.7
DC Current Gain hFE* VCE=10V, Ic=5A 300
Diode Forward Voltage VF IF=10A 2.5 V
VCC=24V, Vclamp=400V, L=7mH
Functional Test 10 A
(see Functional Test Circuit)
Fall Time tF VCC=12V, Vclamp=300V, VBE=0, 15
RBE=47Ω, L=7mH, Ic=7A, IB=70mA µs
Storage Time ts 0.5
(see Fig.2)
*Pulsed: Pulse duration=300µs, duty cycle 1.5%

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BU941 NPN SILICON TRANSISTOR

„ FUNCTION TEST CIRCUIT

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BU941 NPN SILICON TRANSISTOR

„ TYPICAL CHARACTERISTICS
DC Current Gain DC Current Gain

8 VCE=2V 8 VCE=10V
6 6
4 4

2
2
DC Current Gain, hFE

DC Current Gain, hFE

103 103
8 8
6 6
125℃
4
125℃ 4

2
2
-40℃
2 -40℃ 102
10 8 Tc=25℃
8
6
6 Tc=25℃
4 4

2 2

101 101 2 4 6 8 2 4 6 8
2 4 6 8 2 4 6 8
10-1 1 10-1 1
Collector Current, IC(A) Collector Current, IC (A)

Collector-Emitter Saturation Voltage Collctor-Emitter Saturation Voltage

Collector-emitter Saturation Voltage, VCE(SAT) (V)

4.0
Collector-emitter Saturation Voltage, VCE(SAT) (V)

hFE=100
1.4

1.2
3.5
1
-40℃
0.8
2.5
0.6 Tc=25℃
10A 125℃
8 6 4 2 0.4
1.5

0.2

1
0.5 0
0 50 100 150 200 1 2 4 6 8 10 12
Base Current, IB (mA) Collector Current, Ic (mA)

Base-Emitter Saturation Voltage Switching Time

hFE=100
2.4 Vclamp=300V, VCC=12V,
hFE=100, RBE=47Ω,
2.2 L=7mH, Tc=25℃

ts
2 10

1.8
-40℃
1.6
Tc=25℃ 1
1.4 tf
125℃
1.2

0 10-1
1 2 4 6 8 10 12 1 2 4 6 8 10 12
Collector Current, IC(A) Collector Current, IC(A)

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BU941 NPN SILICON TRANSISTOR
„ TYPICAL CHARACTERISTICS(Cont.)

Safe Operating Area

PULSE OPERATION *
4 Ic MAX PULSED
10μs
2

1018 Ic MAX 100

Collector Current, Ic (A)

6
4
CONT μs

1008 1ms
6
4

2 10ms
10-1
8
6
4
* For single non
D.C.
2 repelitive pulse
10-2 2 4 6 8 2 4 6 8 2 4 6 8
100 101 102
Collector-Emitter Voltage, VCE (V)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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