Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4523AX

GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 11 A
ICM Collector current peak value - 29 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W
VCEsat Collector-emitter saturation voltage IC = 8 A; IB = 2 A - 3.0 V
ICsat Collector saturation current f = 16 kHz 8 - A
f = 70 kHz 6.5 - A
tf Fall time ICsat = 8 A; f = 16 kHz 0.3 0.4 µs
ICsat = 6.5 A; f = 70 kHz 0.14 - µs

PINNING - SOT399 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION case c
1 base
2 collector
b
3 emitter

case isolated
1 2 3 e

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 11 A
ICM Collector current peak value - 29 A
IB Base current (DC) - 7 A
IBM Base current peak value - 10 A
-IBM Reverse base current peak value 1 - 7 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W
Tstg Storage temperature -55 150 ˚C
Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W
Rth j-a Junction to ambient in free air 35 - K/W

1 Turn-off current.

May 1998 1 Rev 1.100

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4523AX

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink

STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2
ICES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ˚C
IEBO Emitter cut-off current VEB = 6 V; IC = 0 A - - 100 µA
BVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 12.5 - V
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltage IC = 8 A; IB = 2 A - - 3.0 V
VBEsat Base-emitter saturation voltage IC = 8 A; IB = 2 A 0.85 0.95 1.1 V
hFE DC current gain IC = 1 A; VCE = 5 V - 14 -
hFE IC = 8 A; VCE = 5 V 4.2 5.8 7.3

DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (16 kHz line ICsat = 8.0 A;IB1 = 1.6 A
deflection circuit) (IB2 = -4.0 A)
ts Turn-off storage time 4.5 5.5 µs
tf Turn-off fall time 0.30 0.40 µs
Switching times (70 kHz line ICsat = 6.5 A;IB1 = 1.3 A
deflection circuit) (IB2 = -3.9 A)
ts Turn-off storage time 2.3 - µs
tf Turn-off fall time 0.14 - µs

2 Measured with half sine-wave voltage (curve tracer).

May 1998 2 Rev 1.100

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4523AX

ICsat
TRANSISTOR
+ 50v
100-200R IC DIODE

IB IB1
Horizontal
t
Oscilloscope
2.5us 7.1us IB2
Vertical
14.2us

100R 1R VCE
6V
30-60 Hz
t

Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms (70 kHz).

IC / mA ICsat
90 %

IC

250
10 %
200
tf t
ts
IB
100 IB1

t
0
VCE / V min

VCEOsust - IB2

Fig.2. Oscilloscope display for VCEOsust. Fig.5. Switching times definitions.

ICsat + 150 v nominal

TRANSISTOR
adjust for ICsat
IC DIODE

Lc
IB IB1

20us 26us IB2

IBend LB T.U.T.
Cfb
64us

VCE -VBB

Fig.3. Switching times waveforms (16 kHz). Fig.6. Switching times test circuit.

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4523AX

hFE BU4523AF/X VBEsat / V BU4523AF/X

100 1.2
VCE = 1 V Ths = 25 C
Ths = 25 C Ths = 85 C
Ths = 85 C 1.1

IC = 8 A
1

10 0.9

0.8
IC = 6.5 A

0.7

1
0.6
0.01 0.1 1 10 100 0 1 2 3 4
IC / A IB / A

Fig.7. High and low DC current gain. Fig.10. Typical base-emitter saturation voltage.

hFE BU4523AF/X ts/tf / us BU4523AF/X 16kHz

100 10
ICsat = 8 A
VCE = 5 V Ths = 25 C Ths = 85 C
Ths = 85 C Freq = 16 kHz
8
ts

6
10

2
tf

1 0
0.01 0.1 1 10 100 0 1 2 3 4
IC / A IB / A

Fig.8. High and low DC current gain. Fig.11. Typical collector storage and fall time.
IC =8 A; Tj = 85˚C; f = 16kHz

VCEsat / V BU4523AF/X PD% Normalised Power Derating

10 120
with heatsink compound
110
Ths = 25 C 100
Ths = 85 C 90
80
1
70
60
50
IC/IB = 5 40
0.1
30
20
10
0
0.01 0 20 40 60 80 100 120 140
0.1 1 10 IC / A 100 Ths / C
Fig.9. Typical collector-emitter saturation voltage. Fig.12. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C

May 1998 4 Rev 1.100

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4523AX

Zth / (K/W) IC / A BU2523

10
30

0.5
1
0.2 20
0.1
0.05
0.1
0.02
10
PD tp tp
0.01 D=
T

D=0 t 0
T 100 1000 1500
0.001 VCE / V
1E-06 1E-04 1E-02 1E+00
t/s
Fig.13. Transient thermal impedance. Fig.15. Reverse bias safe operating area. Tj ≤ Tjmax

Ic(sat) (A)
10
9
VCC
8
7

LC 5

4
3
VCL
IBend LB 2

CFB 1
-VBB T.U.T.
0
0 10 20 30 40 50 60 70 80 90 100
Horizontal frequency (kHz)

Fig.16. ICsat during normal running vs. frequency of

Fig.14. Test Circuit RBSOA. operation for optimum performance

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4523AX

MECHANICAL DATA

Dimensions in mm
16.0 max 5.8 max
Net Mass: 5.88 g
3.0
0.7

4.5
3.3
10.0

27 25
max
25.1
25.7
22.5
max

5.1

2.2 max
18.1
4.5
min
1.1
0.4 M
2
0.9 max
5.45 5.45
3.3

Fig.17. SOT399; The seating plane is electrically isolated from all terminals.

Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

May 1998 6 Rev 1.100

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4523AX

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

May 1998 7 Rev 1.100