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(0-100mA) 1K
Circuit Diagram:
A
TYN- A
604 IA
1k (0-30mA)
G K V VAK
A (0-30V) VAA
0-30V
VGG
IG
0-30V
Tabular Column:
Theory:
An SCR is Silicon Controlled Rectifier. Its operation as a rectifier (very low resistance in
the forward direction and very high resistance in the reverse direction) can be controlled.
An SCR is a 4 layer, 3 junctions, and 3 terminal devices. The 3 terminals of an SCR are
anode, cathode and gate. When anode is made positive with respect to cathode, the curve between
VAK and IA is called forward characteristic. During forward biased condition, the junction J2 will
have avalanche breakdown at a voltage called forward breakover voltage (VFBO). At this voltage,
thyristor changes from OFF-state (high voltage with low leakage current) to ON-state characterized
by low voltage across thyristor with large forward current. The forward current is limited mainly by
the load impedance. The forward voltage drop across SCR during the on-state is of the order of 1 to
1.5 V and increases slightly with the load current. Therefore, when SCR conducts the forward
current, it can be regarded as a closed switch.
Latching current is defined as minimum value of anode current required to latch or trigger the
device from OFF state to its ON-state, when the gate signal is removed.
Holding current is defined the minimum value of anode current below which it must fall for
turning-OFF the thyristor.
-IA
Calculation :
Procedure:
I Static Characteristics
1. Connections are made as per the circuit diagram.
2. Use multimeters in proper ranges for IG, IA and VAK. Keep the voltage control knobs in power
supplies to minimum position and current control knobs to maximum position.
3. Switch on the power supplies and the meters. Adjust the output voltage of V AA so that VAK reads
15V.
4. Gradually increase the voltage of power supply (VGG)
5. Monitor the current as read on IG and also the reading on VAK. The current IG increases as VGG is
increased. Initially IA will be reading leakage current (< 1 mA) and VAK remains at 15V, but at a
particular value of IG , VAK suddenly reduces to less than 1V and IA will increase suddenly. The
SCR is now conducting. Note down this value of the gate current IG in the tabular column.
6. Reduce the voltages VGG & VAA to zero. Switch off power supplies.
7. Switch on the power supplies. Vary VGG so that IG reads the gate current as noted in point 5,
above.
8. Gradually increase VAA and note down the readings of VAK and IA. Initially the SCR is in the
blocking mode and only leakage current will be flowing through it. After a particular voltage the
device suddenly conducts i.e. VAK will be < 1.0V and IA will be > 2.0mA. This voltage is the
forward Break-over voltage. Note down the readings. Further increase voltage VAA and note down
the readings. Reduce the voltages and switch off the power supplies.
9. Draw the static characteristics and find the on – state resistance of the device.
II Latching Current:
1. Switch on the power supplies and adjust the output voltage of VAA so that VAK reads 15V. Adjust
VGG such that the device just conducts.
2. Switch OFF VGG to disconnect Gate. It may be observed that the device goes into blocking mode
(i.e. VAK will be 15V and IA will be < 1 mA). If the gate is reconnected the device again conducts
i.e. the gate is having control on the conduction state of the device.
3. Increase VAA in steps and at each step checks the control of the gate current.
4. At a particular value the Gate loses control on the device. The minimum anode current IA to hold
the device in the on state immediately after switching on with the Gate open is “Latching Current “.
Note down this value. Switch off Power Supplies.
.
Result :
1. Latching Current = ------------------mA.
2. Holding Current = ------------------mA.
3. Forward Resistance = ------------------Ω
Circuit Diagram:
Tabular column:
(A) Transfer characteristics
Sl.No VDS = V
VGS (Volts) ID( mA)
Expected Graph:
Theory:
The Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is a voltage controlled
device having very high input impedance and works at high switching frequency(several tens of
kilohertz). The MOSFET are majority carrier devices. In general MOSFET are of two types.
1. Depletion.
2. Enhancement.
The MOSFET has three terminals: Gate(G), Drain(D), and Source(S).
When the MOSFET is turned on the current flows from Drain to Source. The voltage is applied
between Gate-Source to turn on MOSFET. The MOSFET can be turned off by removing the Gate
to Source voltage. Thus Gate has full control over the conduction of MOSFET. The turn-on and
turn-off times of MOPSFET’s are very small. Hence they operate at very high frequencies and are
preferred in applications such as choppers and inverters.
Procedure:
(B)Output/Drain characteristics:
Expected Graph:
(3) Vary the Gate supply voltage VGG in steps and note down the corresponding Drain
current (ID), Gate-Source voltage (VGS).
(4) The value of VGS at which ID start increasing is noted down.(this value of VGS is
threshold voltage)
(5) From the readings draw the transfer characteristics & calculate the trans-
conductance gm, which is given by gm = ID (mA) /VGS (volts).
(A) Output characteristics:
(1) Connections are made as shown in the circuit diagram.
(2) Keep the Gate–Source voltage (VGS) constant (Slightly above the threshold voltage).
(3) Vary the supply voltage VDD in steps and note down the corresponding Drain current
(ID), Drain-Source voltage (VDS) and tabulate the result.
(4) Repeat the above procedure for different values of Gate–Source voltage (VGS).
(5) From the readings draw the output characteristics & calculate the Drain resistance rd,
which is given by, rd = VDS (volts) / ID (mA).
Result :
1. Trans-conductance = ------------------mho
2. Drain resistance = ------------------
3. Threshold voltage (VGS (th)) = ------------------V
Circuit Diagram:
Tabular column:
(A)Transfer characteristics Expected Graph:
Sl.No VCE = V
VGE ( Volts) IC(mA)
Apparatus required:
Sl. No Equipments / Components Range Quantity
1 Variable Regulated Power Supply 0-30V 2
2 IGBT IRG4BC200 1
3 Resistor 1KΩ 2
4 Ammeter 0-100mA 1
5 Voltmeter 0-30V 1
6 Voltmeter 0-10V 1
Theory:
The insulated Gate Bipolar Transistor (IGBT) is the latest device in power
electronics. It is obtained by combining the properties of BJT and MOSFET. The gate circuit of
MOSFET and collector emitter circuits of BJT are combined together to form new device. This
device is called IGBT. The IGBT has three terminals: Gate (G), Collector(C) and Emitter(E).
Current flows from Collector to Emitter whenever a voltage between Gate and Emitter is applied.
The IGBT is said to be turned on. When Gate Emitter voltage is removed IGBT turns-off. Thus
Gate has full control over the conduction of IGBT. An IGBT has high input impedance like
MOSFETs and low on state conduction loses like BJTs. An IGBT is inherently faster than BJT. The
switching frequency can be up to 20 KHz.
Procedure:
(A) Transfer characteristics:
(1) Make the connections as shown in the circuit diagram.
(2) Keep the Collector–Emitter voltage (VCE) constant (say at 10V).
(3) Vary the Gate supply voltage VGG in steps and note down the corresponding Collector
current (IC), Gate-Emitter voltage (VGE) in the tabular column.
(4) From the readings draw the transfer characteristics & calculate the trans- resistance rm.
Trans-resistance (rm) = VGE (volts) / Ic (mA)
(B)Output/Drain Characteristics:
Expected Graph:
(1) Keep the Gate–Emitter voltage (VGE) constant (slightly above the threshold voltage).
(2) Vary the supply voltage VCC in steps and note down the corresponding Collector current
(IC) & the Collector-Emitter voltage (VCE) and tabulate the readings.
(3) Repeat the above procedure for different values of Gate–Emitter voltage (VGE).
(4) From the readings draw the output characteristics & calculate the Collector resistance IC.
Result:
1. Trans-resistance =------------------
2. Collector resistance =------------------
3. Threshold voltage (VGS (th)) = ------------------V
Firing angle
(α) in Vo(Practical) Vo (Theoretical)
degrees
Ideal Graph:
Apparatus required:
The UJT is commonly used for generating triggering signals for SCRs. It has 3 terminals
Emitter, Base1,Base 2 .When the DC supply voltage is applied the capacitor is charged through
resistor .When the capacitor voltage becomes equal to peak voltage, the peak of voltage the UJT
turns ON and capacitor discharges. Since the current flows through the primary of pulse
transformer, a pulse is generated. When the capacitor discharges to a voltage called valey voltage
the UJT turns-off and again capacitor starts charging. This mode of working of UJT is called
relaxation oscillator.
Procedure:
1. Circuit connections for synchronous mode are made as per the circuit diagram and supply is
switched ON.
2. Output of bridge rectifier, the voltage across zener diode and capacitor are observed.
3. Potentiometer is varied and variation of the frequency of triggering pulses is observed at
pulse transformer output terminals.
4. Gate signal to the SCR is applied and firing angle is varied from 00 to 1800. Graph between
α and Vo is drawn.
Waveforms:
Calculation:
1. Vo (Theoretical) = [Vm /] (1+ Cos α0)
Result:
Firing
Formula for Half wave rectifier: angle(α)
Votheoritical
(volts)
Aim: To generate trigger pulses using SCR Digital Triggering Circuit. Use these pulses to
Trigger SCRs used in a single – phase controlled rectifier or AC voltage controller.
Apparatus required:
Theory:
SCR circuit use digital firing scheme. Normally pulsed firing method is used to trigger the
SCR. The pulsed firing reduces gate power dissipation. The width of the pulse is more than turn
ON time of the SCR. Digital circuit is highly flexible, not affected to noise and failure rate of
digital circuit is less. Some of these advantages of digital firing circuit have made popularity over
other firing scheme.
Procedure:
1. The firing angle can be varied from 0 to 180 degree using thumb wheel switch varied 0-9
steps.
Tabular column
Firing angle(α)
Vo(volt)
Vo therotical
2. The firing scheme is based on ZCD (Zero Cross Detector) fixed frequency line
synchronized clock generate up/down counter flip flop and pulse transformer.
Tp= Train of pulses for positive cycle
Tn= Train of pulses for negative cycle
3. Pulse transformer provides isolation between logic circuit and power circuit.
4. Selector switch is adjusted to 180(converter mode) with the help of thumb wheel. Firing
angle can be varied from 0 to 180 degree.
Result:
Circuit Diagram:
Aim: To Study the performance of a Single Phase full wave Controlled Rectifier connected to
resistive and resistive – inductive loads. To plot the variation of output voltage versus delay
angle.
Apparatus required:
Theory:
Controlled rectifiers are basically AC to DC converters. The power transferred to the load
is controlled by controlling triggering angle of the devices ‘alpha’ by the control circuit. The input
to the controlled rectifier is normally AC mains. The output of the controlled rectifier is adjustable
DC voltage. Hence the power transferred across the load is regulated. The controlled rectifiers are
used in battery charges, DC drives, DC power supplies etc. The controlled rectifiers can be single
phase or three phase depending upon the load requirement.
Procedure:
Tabular Column:
Vo=Vm(1+cosα)/π (R-
load)
Ideal Graph:
Vo
Firing Angle(α)
Waveforms:
Vin
Vm
Ig1
t
Ig2
t
VLoad
R – Load and RL load with freewheeling diode
t
VSCR
t
Vload
RL - Load
t
α
Calculations:
Vo=Vm(1+cosα)/π (R-load)
Result:
Circuit Diagram:
CRO
LOAD
56KΩ,
2W MT2
470KΩ
230V, 1-Φ TRIAC
50Hz AC
supply DIAC G MT1
0.1µF
Aim: To control the AC voltage applied to a resistive load and a resistive – inductive load
using TRAIC and DIAC combination.
Apparatus required:
Theory:
A.C Voltage controller is also known as A.C Regulator, which converts constant R.M.S
voltage and frequency input to variable output R.M.S voltage with same frequency as Input.
A TRIAC is a 3 terminal semiconductor switching device used for A.C application and
DIAC is used as gate triggering of TRIAC.
Procedure:
Note: The output waveform is viewed in power scope and not in normal oscilloscope.
Wave Forms:
Vo
VTRIAC
( +)
2 (2 +) wt
Result:
Circuit Diagram:
Tabular column:
2 48 50 20
3 48 50 30
4 48 50 40
5 48 50 50
Aim: To control the speed of a separately excited DC motor using a MOSFET (OR) IGBT
Chopper circuit. To plot the variation of i) speed Vs duty cycle and ii) Chopper output
voltage Vs duty cycle.
Apparatus required:
Theory:
Procedure:
Ideal Graph
Theory:
Result:
Circuit Diagram:
Tabular Column:
3
30
( i ) Half STEP
A1 A2 B1 B2
1 0 1 0
1 0 0 0
1 0 0 1
0 0 0 1
0 1 0 1
0 1 0 0
0 1 1 0
( ii ) Full STEP
A1 A2 B1 B2
1 0 1 0
1 0 0 1
0 1 0 1
0 1 1 0
Calculation:
1. % Error=(Ra-Ri)/Ra
Result:
Circuit Diagram:
V0
M
56KΩ,
2W
MT2
470KΩ
230V, 50Hz, TRIAC
DIAC G MT1
0.1µF
Vo
Aim: To control the speed of Universal Motor/Single phase Induction Motor using
TRIAC- DIAC combination and to plot the graph of speed VS output voltage.
Apparatus required:
Theory:
AC Voltage controller is also known as AC Regulator, which converts constant RMS
voltage and frequency input to variable output RMS voltage with same frequency as input.
A TRIAC is a 3 terminal semiconductor switching device used for AC application and
DIAC is used as gate triggering of TRIAC.
Procedure:
1. Rig up the circuit as shown in the circuit diagram.
2. Set the potentiometer to the maximum value and switch on the AC input voltage
3. Vary the potentiometer. The motor speed varies.
4. Connect the probes across the load. As the pot is varied, the delay angle and voltage
varies.
5. At each step, speed and output voltage are noted in tabular column.
6. Plot the graph between speed and output voltage.
Note: The output waveform is viewed in power scope and not in normal oscilloscope.
Waveforms:
Result :
(52) What is a Converter? What is the difference between converter & rectifier?
(53) What is the difference between Fully controlled & Half controlled converters?
(54) What is the effect of inductance on the load circuit?
(55) What is Free wheeling/ Fly wheeling diode?
(56) What is the effect of Free wheeling diodes on the load?
(57) What is a Dual Converter? Give its applications.
(58) What is a Series Converter? Give its applications.
(59) In what way the Free wheeling diodes are different from ordinary diode?
(60) Give the classification of converters based on the quadrant operation
(61) Give the applications of controlled rectifiers?
G
Gate S (Source)
G D S
G
Gate
E (Emitter) G C E
E B2 B1 E
(Emitter) Bottom view
B1 (Base-1) In order to identify the terminals go in clockwise after the notch
In order to identify the primary & secondary windings, check the continuity.
Trigger O/Ps
1500 300
G K
T1 1800 00
T1’ Test Points
T2 Gnd 1 2 3
T2’ 4 5 6 7
POWER
FREQUENCY
ON / OFF
Trigger O/Ps
TAUX 4 5 6 7
(22) Induction Motor:
POWER
M