Vous êtes sur la page 1sur 29

Nanoscale

View Article Online


REVIEW View Journal | View Issue

Inkjet-printed optoelectronics
Cite this: Nanoscale, 2017, 9, 965 Zhaoyao Zhan,* Jianing An, Yuefan Wei, Van Thai Tran and Hejun Du*
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

Inkjet printing is a powerful and cost-effective technique for deposition of liquid inks with high accuracy,
which is not only of great significance for graphic applications but also has enormous potential for the direct
printing of optoelectronic devices. This review highlights a comprehensive overview of the progress that has
been made in optoelectronics fabrication by the inkjet printing technique. The first part briefly covers the
droplet-generation process in the nozzles of printheads and the physical properties affecting droplet for-
mation and the profiles of the printed patterns. The second section outlines the recent activities related to
Received 20th October 2016, applications of inkjet printing in optoelectronics fabrication including solar cells, light-emitting diodes, photo-
Accepted 6th December 2016
detectors and transparent electrodes. In each application field, the challenges with the inkjet printing process
DOI: 10.1039/c6nr08220c and the possible solutions are discussed before a few remarks. In the last section, a brief summary on the pro-
www.rsc.org/nanoscale gress of inkjet printing fabrication of optoelectronics and an outlook for future research effort are presented.

1. Introduction ible electronics for integration, and also adapted to low-temp-


erature solution processing.3
The fast-expanding market of optoelectronic devices, including The solution-processable materials fall into diverse cate-
photodetectors, light emitting diodes (LEDs), photovoltaics, gories including soluble semiconducting polymers or their
and displays, calls for innovative production of nanostructures precursor molecules, colloids, and organic or inorganic nano-
from optoelectronic materials in a low-cost, high-throughput, particles (NPs).4 The inorganic NPs show a relatively high
and large-scale fashion.1,2 The candidates of optoelectronic stability in the ambient environment. Owing to the tunability
materials should be, ideally, compatible with silicon and flex- of the formulations and rheology and thereby of designing
inks for variant printing techniques and applications, the solu-
tion-processable materials could readily lend themselves to
School of Mechanical and Aerospace Engineering, Nanyang Technological University,
50 Nanyang Ave, 639798, Singapore. E-mail: zhanhit@hotmail.com,
printing. The low-temperature nature of the printing process
mhdu@ntu.edu.sg allows for the fabrication of devices on various types of sub-

Dr Zhaoyao Zhan received his Dr Jianing An received her


B.E. and M.E. degrees in materials B.E. from the Harbin Institute
science and engineering from the of Technology, China in
Harbin Institute of Technology in 2009 and her Ph.D. from
2006 and 2008, respectively, and Nanyang Technological University,
his Ph.D. degree from Nanyang Singapore in 2014. She has been
Technological University (NTU) working as a postdoctoral
in 2013. During 2014–2016, he research fellow at Nanyang
had worked as a postdoctoral Technological University since
researcher at the Chalmers 2014. Her research focuses on fs
University of Technology, laser-based 3D printing of micro/
Sweden. Now he is working as a nanostructures for electrical and
Zhaoyao Zhan research fellow at NTU, Jianing An optical applications.
Singapore. He has co-authored
one book chapter, and published more than 40 technical papers
with citations close to 600 and a H-index of 14. His current
research interests include carbon nanomaterials (carbon nano-
tubes, graphene), printed electronics and sensors.

This journal is © The Royal Society of Chemistry 2017 Nanoscale, 2017, 9, 965–993 | 965
View Article Online

Review Nanoscale

strates, ranging from conventional flat and rigid substrates to by a nozzle in the printhead and can be formed through either
the emerging flexible and even curved ones, paving the way to a continuous or a drop-on-demand (DOD) manner. In the con-
the development of flexible and conformable electronics. tinuous operating process, an ink-supply pump pressurizes the
Among all forms of printing techniques, inkjet printing is a ink and ejects it from the nozzle, generating a stream of liquid
powerful and cost-effective technique for deposition of liquid droplets. In the course of droplet generation, the droplets are
inks with high accuracy, which is not only of great significance selectively charged by the electric voltage applied to the
for graphic applications but also has enormous potential for the nozzle. The charged droplets will be deflected by an electric
direct printing of optoelectronic devices. The peculiar character- voltage on the deflection electrode and separated from the
istics offered by inkjet printing include additive patterning, uncharged ones. After that the charged droplets will reach the
reduced material consumption, maskless and non-contact depo- print substrate, while the uncharged ones which are not used
sition, low cost, and the capability of large-scale manufacturing.1 for printing are caught by the gutter and carried back to the
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

The direct writing feature of inkjet printing enables deposition ink tank. The advantage of continuous printing is the high fre-
of numerous thin films with the ease of altering the design from quency of droplet generation and printing. Nowadays,
batch to batch. Moreover, inkjet printing is capable of depositing however, the DOD system is more widely employed because it
a given material in pre-determined sites on a substrate that has has lower system complexity and offers higher controllability
pre-existing patterns, where contamination or damage of pat- and accuracy of droplet displacement.5,6
terns would be induced with other deposition processes. In a DOD system, the ink droplets are jet from the nozzle by
This review highlights recent advancements of inkjet print- pulses generated by a thermal resistor, a piezoelectric transdu-
ing-based fabrication, in terms of active deposition and elec- cer, a thermal buckling or an acoustic wave. A thermal print-
trode deposition, of optoelectronic devices, such as solar cells, head uses a thin film resistive heater to rapidly vaporize a thin
LEDs, photodetectors, and transparent electrodes. The inkjet layer of the ink liquid (within a few microseconds) to form a
printing techniques are able to overcome these challenges fast expanding bubble which pressurizes the ink solution (see
existing in traditional fabrication processes, therefore produ- Fig. 1). The pressure for actuation should approximate the
cing new functionalities and/or boosting the cost-effectiveness saturated vapor pressure of the ink liquid at its superheat
and performance of the existing ones. limit. Consequently, the pressurized droplet in the nozzle will
be ejected from the nozzle, as schematically illustrated in
Fig. 1. Thermal DOD technology features simple design and
2. Principles of inkjet printing low costs, however it is confined to vaporizable inks due to the
technology requirement of the bubble formation. The elevated operating
temperature (ca. 300 °C) makes it inappropriate for polymer-
2.1 Droplet formation based printing. The piezoelectric DOD system has been widely
Inkjet printing, based on a drop-by-drop deposition fashion, employed to bypass this limitation. In the piezoelectric print-
has been invented and used for typewriting and recording for head, a piezoceramic transducer is electrically stimulated to
over 50 years. The droplets of ink with low viscosity are ejected induce mechanical actuation according to its resonant modes.

Dr Yuefan Wei is a research Mr Van-Thai Tran received his


fellow in the School of Bachelor’s degree from the
Mechanical and Aerospace Faculty of Mechanical
Engineering of Nanyang Engineering, Ho Chi Minh
Technological University. She University of Technology,
received both her B.E. and M.E. Vietnam in 2014. Since August
in Materials Science and 2014 he has been pursuing his
Engineering from Tianjin Ph.D. study in the School of
University in 2006 and 2008, Mechanical and Aerospace
respectively. She obtained her Engineering, Nanyang Techno-
PhD degree from Nanyang logical University, Singapore
Technological University in under the supervision of Prof.
Yuefan Wei 2013. Her research interest and Van Thai Tran Du Hejun and Dr Yang Hongyi
expertise are fabrication, physics (SIMTech, Singapore). His
and characterization of photovoltaic materials and devices, chemi- research interests include additive manufacturing and functional
cal vapor deposition and hydrothermal synthesis of nano- material applications, with a particular focus in the field of zinc
structured materials, three dimensional (3D) printing technology, oxide and MEMS devices.
energy conversion and storage, photoelectrochemical cells, and
self-cleaning technology.

966 | Nanoscale, 2017, 9, 965–993 This journal is © The Royal Society of Chemistry 2017
View Article Online

Nanoscale Review

and flight, as well as the aerodynamic and electrostatic inter-


actions of the fluid drops in flight. In the flight, smaller satel-
lite drops would also be created slightly after the drop for-
mation, which recombine with the primary drops after a few
periods. Although satellite formation is quite common during
the droplet formation, it could be minimized or even elimi-
nated by judiciously selecting the printing parameters.5
Generally, the formation of droplet is affected by the ink’s
fluid properties. Fromm7 introduced a dimensionless number
Z to categorize the fluid properties and to analyze the mech-
anics of drop formation in printheads:
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

Z ¼ ðdργÞ1=2 =τ

where ρ, γ and τ are the density, surface tension and viscosity


of the ink, respectively, and d is a characteristic length, which
Fig. 1 Droplet formation process in a thermal and piezoelectric inkjet
is the nozzle diameter in the case of DOD printheads. By refin-
nozzle.
ing the prediction of Fromm, Reis et al.8 proposed that the ink
droplet could be formed when Z ranges from 1 to 10 after
studying alumina wax suspensions with a range of concen-
The mechanical pulse of the piezoelectric membrane propa-
trations. The lower limit of the Z number is determined by the
gates into the nozzle, pressurizing the ink solution, and eject-
viscosity dissipating the pressure pulse, while the creation of
ing one droplet from the nozzle (as shown in Fig. 1). Thus, the
satellites rather than a single droplet is the determinant of its
volume and final velocity of a droplet also rely on the driving
upper limit. Furthermore, when Z is in the range of 1 < Z < 14,
voltage on the transducer. In practice, a printhead usually inte-
the droplet volume rises with the increase of Z, which is in
grates a big and dense nozzle array containing a large number
accordance with Fromm’s prediction. However, in practice,
of separate nozzles to promote the printing production.
systems with Z numbers much larger than 10 are also printa-
The formation of ink jets starts from ejection and stretch-
ble if the satellites recombine with the primary droplet in few
ing of the liquid, followed by detachment of the liquid from
periods. Schubert et al.9 found that various solvents that have
the nozzle, contraction of the liquid ligament, breakup of the
low viscosities in the range of 0.4 to 2 mPa s and surface
liquid ligament into main drops and satellites, and finally
tensions in the range of 23 to 73 mN m−1 are also printable
merging of the main drops and satellites.5 The control of drop
although their calculated Z numbers are in the range of 21 to
generation and subsequent flight of the jetted inks requires
91. The vapor pressure of the solvents was found to be the
profound studies into the liquid properties at high shear rates,
crucial factor of the printability. For solvents with vapor press-
stretching and contraction of fluid ligaments, drop generation
ures higher than approximately 100 mmHg, the printed dro-
plets are unstable or even no droplets could be produced.
The non-contact nature of inkjet printing allows for the
Dr Hejun Du is currently an deposition of nanomaterial inks on a wide range of substrates
associate professor in the School including polymers, oxides, metals, and biomaterials. Another
of Mechanical and Aerospace advantage of inkjet printing is the feasibility of printing arbi-
Engineering, Nanyang Techno- trary patterns over a large working area. In addition, the use of
logical University, Singapore. He nanomaterials in the dispersion overcomes the solubility limit-
obtained both B.E. and M.E. ations of the inks, resulting in higher stability of the printing
from the Nanjing University of process. However, some precautions should be taken to
Aeronautics and Astronautics, prevent precipitation or aggregation of dispersion-based nano-
China, and his PhD from materials in the ink for long-term printing, because the pre-
Imperial College, UK. His cipitation or aggregation of the ink contents is the main con-
research interests include (1) tribution to clogging of the nozzle, leading to the ‘first drop
numerical and computational problem’. The pre-printing cleaning, capping or stirring of the
Hejun Du methods for engineering ink will be beneficial to alleviate the ‘first-drop problem’
applications; (2) MEMS and effect.
microfluidics; (3) smart materials and their engineering Generally, for DOD printheads, the ink viscosity must be
applications. He has published over 200 international refereed within the range of 1–30 mPa s. Because the piezoelectric
journal papers, more than 100 conference papers and a few transducer and resistive heater only generate limited power,
invited book chapters. His journal papers were cited over 4000 printing high-viscosity materials is difficult for conventional
times in the SCI with a H-index of 36. inkjet printing. Usually, several picoliters of the ink are ejected

This journal is © The Royal Society of Chemistry 2017 Nanoscale, 2017, 9, 965–993 | 967
View Article Online

Review Nanoscale

in order to produce patterns with feature sizes of 20–50 µm appear when NPs in the ink accumulate along the perimeter of
and a thickness lower than 1 µm. This coarse resolution is the drying droplet due to inhomogeneous evaporation of the
caused by the combined effects of droplet diameters which are solvents.14 The uneven morphology leads to the formation of
usually larger than ∼10–20 µm and placement errors which are electric defects.
in the range of ±10 µm at the standoff distances of ∼1 mm. In To overcome the coffee-ring effect, the evaporation process
electrohydrodynamic (EHD) printing, which uses electric fields of the solvent has been modified by introducing drying agents,
rather than a resistive heater, piezoelectric transducer or precisely controlling the humidity in the ambient environment
acoustic wave to eject the ink liquid, the droplets are created during the solvent evaporation, or tuning the heating rate.14–17
by a fine jet generated at the apex of the conical ink meniscus In an optimized solvent mixture, the drying agent has a higher
at the tip of the nozzle (see Fig. 2).10 Unlike conventional boiling point (B. P.) and a lower surface tension compared
inkjet printing processes, EHD printing pulls the liquids with the main solvent. During the drying, the main solvent
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

rather than pushing them, thus printing of the high viscosity having a lower B. P. and higher surface tension evaporates
ink is not challenging for EHD printing. The advantages of faster at the contact line creating an outward flow, which is
EHD printing include high resolution (submicron), flexibility gradually delayed as the contact line approaches the solvent
in the ink formulation design, and easy jetting without clog- with a larger fraction of the drying agent. Meanwhile, an
ging the nozzle. EHD printing has enormous potential in inward flow (Marangoni flow) will be developed by the surface-
printing of complex and high-resolution features and is tension gradient over the whole droplet. The outward and
opening up new ways toward nanotechnology. Marangoni flows continuously circulate the ink contents
inside the fluidic droplet, producing a uniform assembly of
2.2 Control of pattern morphology and feature size the ink contents. The drying process of a droplet inkjet-
Ink volatility and viscosity are critical parameters of controlling printed with a mixed-solvent ink is schematically shown in
the pattern morphology. Non-uniform films are easily formed Fig. 3, where chlorobenzene (CB) is the main solvent, and
due to the ‘coffee-ring’ effect or central ‘mountaintop’ effect dodecane is the drying agent. Fig. 4 presents the non-uniform
which induces capillary12 or Marangoni13 flows during the and uniform surface profiles of Al2O3 NPs respectively pro-
evaporation of the ink solvents. Coffee-ring edges usually duced by a water single-solvent ink and a dimethylformamide
(DMF)/water mixed-solvent ink.14 The addition of DMF could

Fig. 3 The process of droplet drying after inkjet printing with a mixed-
solvent ink. Reproduced with permission from ref. 11, Copyright 2008,
John Wiley and Sons.

Fig. 2 Structure of nozzles and schematic illustration of a high-resolu-


tion EHD printer. (a) SEM images of a glass microcapillary nozzle (2 µm
internal diameter). The entire outer surface of the nozzle and its inner
surface near the tip are coated with functionalized gold. The tip region
is shown in the magnified images on the right panel. (b) Configuration of
the nozzle and the substrate for printing. The ink droplet was ejected
from the nozzle to a moving substrate to produce the line patterns. (c) Fig. 4 SEM images and the corresponding height profiles of an Al2O3
Setup of an inkjet printer. The gold-coated nozzle was connected to a ink droplet. The Al2O3 NPs were produced with the ink of: (a) water
grounded electrode under the substrate by a power supply. Reproduced single-solvent and (b) DMF/water mixed-solvent. Reproduced with per-
with permission from ref. 10, Copyright 2007, Nature Publishing Group. mission from ref. 14, Copyright 2011, Elsevier.

968 | Nanoscale, 2017, 9, 965–993 This journal is © The Royal Society of Chemistry 2017
View Article Online

Nanoscale Review

greatly improve the final inkjet-printed pattern profile by intro- unfavorable cost. Since the first report of organic solar cells by
ducing the recirculating flow. The heating process is also screen printing,20 this technique has been presenting promise
found to be critical in controlling the coffee-ring effect, since of developing industrially scalable low-cost fabrication pro-
the solvent evaporation is also highly dependent on the cesses. However, the ever growing demand for improved per-
heating process. Gradual heating could effectively restrict the formance has led to an expanding interest in inkjet printing
convection flow during the evaporation in a printed low- which enables printing features with higher resolution, result-
viscosity Ag (Ag) NP ink, causing the lines to become convex ing in lower shadowing losses and reduced manufacturing
with the homogeneously and very densely packed NPs, which costs. In addition, inkjet printing technology allows for the
greatly enhances the electrical conductivity of inkjet-printed deposition of active materials in specific areas of the pre-
Ag lines.17 patterned substrate. The first demonstration of inkjet printing
Apart from the long-standing coffee-ring effect, the mor- of a thin-film library of donor/acceptor systems used in bulk
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

phology of printed patterns could also be greatly affected by heterojunction (BHJ) organic solar cells was reported by Marin
many other factors, such as the aerodynamic effect, electro- et al.21 In addition, the morphology studies on inkjet-printed
static interaction of droplets, satellites, and interaction films with atomic force microscopy (AFM) suggested the for-
between the liquid ink and the substrate. It is quite challen- mation of homogeneous structures. Then Steirer et al.22 sys-
ging to print long-distance and continuous lines, with con- tematically investigated the critical parameters for both inkjet
trolled feature sizes and morphology.5 To minimize the feature and ultrasonic spray deposition of poly(3,4-ethylenedioxythio-
size of the printed patterns, it is essential to limit ink spread- phene) polystyrene sulfonate (PEDOT:PSS) thin films on com-
ing on the surface. Changing the surface energy of the sub- mercial indium tin oxide (ITO) for organic photovoltaic device
strate and creating patterned chemical/physical structures on fabrication. Their study showed that the efficiency of organic
the substrate are efficient methods to control the wetting be- solar cells with an inkjet-printed PEDOT:PSS hole conducting
havior of the droplets on the substrate and to increase the layer were comparable with that of solar cells fabricated
printing resolution. The droplets on a non-wetting substrate through the traditional spin-coating process. The drop spacing
tend to partially recede or even completely rebound, while the and the substrate temperature are critical parameters in inkjet
ones on a wetting surface are prone to spread away,18 giving a printing; while for ultrasonic spray coating, the substrate
flat-disk-shaped pattern with a diameter larger than the orig- temperature and the solution flow rate will play critical roles.
inal droplet, resulting in very coarse printed structures. PEDOT:PSS films produced by optimized inkjet printing, ultra-
Although dewetting treatment could to some extent improve sonic spraying and spin coating were compared in a proto-
the pattern resolution, bulges will be formed on lines that are typical BHJ organic solar cell which employs a poly(3-hexylthio-
unstable on substrates with too low surface energy, which phene) and 6,6-phenyl-C61-butric acid-methyl ester (P3HT:
would locally broaden the printed graphics and degrade the PCBM) blend as the absorber. The results revealed that the
continuity of printed features. In addition to surface energy efficiencies of the devices fabricated by the three processes
modification, pre-patterning the surface with varying wetta- were comparable (in detail, the efficiencies were 3.3% 3.5%
bilities or surface topographies in different regions of the and 3.6%, for inkjet printing, spray deposition, and spin
substrate could benefit reducing the spreading of the ink solu- coating respectively). Furthermore, hybrid transparent conduc-
tion. Ultrafine gaps can be created by a self-aligned printing tive films prepared by inkjet printing PEDOT:PSS and other
method that relies on differentiation of wettability.19 Another conductive components have also been demonstrated for
scenario lies in optimizing the ink materials and formulations, replacing the ITO transparent electrodes in organic solar cells,
which not only influence the droplet formation process, but which will be covered in section 3.4.3.
also prescribe the printing resolution and the device perform- It is found that the morphology of inkjet-printed films
ance. The utilization of an ultrafine nozzle is desirable for could be dramatically tuned by using additives, and thus
printing patterns with small feature size if the clogging could affects the properties of organic optoelectronics and the
be avoided by using low viscosity inks with fine NPs. Addition overall performance of the devices. Xia et al.23 fabricated
of special additives into the ink dispersion is also useful for organic solar cells by using a blend of poly(9,9-dioctylfluorene-
tuning the viscosity of the ink and benefiting inkjet printing of co-benzothiadiazole) (F8BT) with poly(9,9′-dioctylfluorene-
high-resolution patterns.18 co-bis-N,N′-(4-butylphenyl)-bis-N,N′-phenyl-1,4 phenylene-
diamine) (PFB), and organic light emitting diodes (OLEDs) by
using a blend of F8BT with poly(9,9-di-octylfluorene-co-N-(4-
3. Applications butylphenyl)diphenylamine) (TFB). They compared the devices
with a film produced by either inkjet printing or spin-coating.
3.1 Solar cells It has been discovered that the rapid drying of the small
Solar cells could directly convert solar irradiation into electri- inkjet-printed droplets resulted in a finer phase separation,
cal energy and thus offer the promise to relieve our reliance on producing OLEDs and organic solar cells with even better per-
the long-standing fossil energy resources which have caused formances and a higher efficiency than those prepared by the
serious environmental issues to our home planet. The use of traditional spin coating method. However, a critical issue with
solar cells, however, has not been expanded yet due to the the films produced by inkjet printing is the non-uniformity in

This journal is © The Royal Society of Chemistry 2017 Nanoscale, 2017, 9, 965–993 | 969
View Article Online

Review Nanoscale

thickness, which may be due to the use of only a single solvent a fine film morphology and also the coffee-ring effect would be
p-xylene. This problem could be possibly alleviated by using a decreased.28
solvent mixture. Hoth et al.24 used a blend of P3HT:PCBM in a Though inkjet printing technology has manifested its versa-
mixed solvent of o-dichlorobenzene and mesitylene to inkjet tility in fabricating active components and/or hole conducting
print organic solar cells on PEDOT:PSS coated ITO, where layers, the development of an ambient environment compati-
Ca : Ag was deposited as the top cathode. They also suggested ble inkjet printing process is highly desirable. Aernouts et al.29
that by optimizing the ink solvent formulation, the morpho- have demonstrated inkjet-printed P3HT:PCBM blend solar
logical and interfacial properties of the printed P3HT:PCBM cells in the ambient environment by utilizing a polymer: fuller-
blend photoactive layer could be significantly improved. For ene blend dissolved in a mixture of the main solvent CB and
example, a mixture of high and low boiling solvents, 68% of the high B. P. solvent tetrahydronaphthalene (THN). They
ortho-dichlorobenzene (ODCB) and 32% of mesitylene could found that a balance between ink viscosity and surface wetting
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

print organic solar cells with an intimate morphology in the is critical to a smooth active layer with a small surface rough-
P3HT:PCBM blend, giving a better solar cell performance with ness, producing devices with a PCE of 1.4% under simulated
a larger short-circuit current of 8.4 mA cm−2, an open-circuit AM1.5 conditions. The addition of a high B. P. solvent could
voltage of 0.54 V, a filling factor of 0.64, and a higher power also help to prevent clogging of the nozzle. Recently, Jung and
conversion efficiency (PCE) of 2.9%. While, the device pre- co-workers27 reported the fabrication of all-inkjet-printed,
pared with the inkjet-printed P3HT:PCBM blend with the tetra- air-processable organic solar cells with the structure of
lene solvent shows a much large roughness and a poor distri- PEDOT:PSS/poly[N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-
bution of PCBM in the P3HT domain, thus, outputting a poor thienyl-2′,1′,3′-benzothiadiazole)]:[6,6]-phenyl-C71-butyric acid
performance. More recently, Hoth et al. further improved the methyl ester (PCDTBT:PC70BM)/ZnO/Ag. A high-conductivity
performance of inkjet-printed organic solar cells by using the PEDOT:PSS aqueous dispersion was printed to replace ITO as
combined regioregularity(RR)-96%-P3HT and the ODCB/ the anode. 5 wt% dimethyl sulfoxide (DMSO) and 0.1 wt%
mesitylene solvent mixture to control ink drying and film fluorosurfactant were added into the PEDOT:PSS ink to
formation processes. They have obtained a suitable gelation prepare a highly conductive and uniform film. A PCDTBT:
time, improved the morphology of the P3HT:PCBM layer, and PC70BM (at ratio of 1 : 4) donor/acceptor blend dispersed in a
achieved an impressive PCE of 3.5%.25 Eom et al. reported 5 : 4 : 1 volume mixture of the CB, mesitylene (MT) and chloro-
P3HT:PCBM blend organic solar cells produced with the form (CF) ternary solvent, was then printed onto the PEDOT:
inkjet-printed PEDOT:PSS hole transporting layer, and PSS layer. It was found that the inkjet-printed PCDTBT:
suggested that the addition of a certain amount of the glycerol PC70BM blend layer presented similar morphological pro-
and ethylene glycol butyl ether (EGBE) surfactant into PEDOT: perties (see Fig. 5) and excited state dynamics with its spin-
PSS inks improved the surface morphology and conductivity of coated counterparts. The all-inkjet-printed organic photo-
the PEDOT:PSS hole transporting layer, resulting in enhanced voltaic devices exhibited an average PCE of 2%. A noteworthy
performance of the organic solar cells. Using the optimized advantage in this work was that all the fabrication and
ink formulation of PEDOT:PSS to print the hole transporting measurement processes were performed in air at room temp-
layer and the P3HT:PCBM blend as the photoactive layer, they erature. The performance could be drastically improved to 5%
have achieved a PCE of 3.16% in P3HT:PCBM based BHJ solar by depositing the cathode via evaporation. The effects of addi-
cells.26 tives on the inkjet-printed organic solar cells are summarized
They further demonstrated the organic solar cells fabricated in Table 1.
by inkjet printing both the photoactive P3HT:PCBM layer and Despite its versatile roles in organic solar cell fabrication,
the PEDOT:PSS hole transporting layer, and the results inkjet printing of inorganic solar cells remains a challenge.
suggested that adding high B. P. additives, including 1,8 The suspended particles in inorganic inks have a strong ten-
octanedithiol (ODT), ODCB and chloronaphthalene (Cl-naph), dency to agglomerate, leading to an increase in viscosity and
into the photoactive dispersion in the CB solvent drastically thus clogging of the nozzles. These challenges could be miti-
affected the morphological and optoelectronic properties, and gated or eliminated by designing ink formulations, for
overall solar cell performance. A device printed from an ODT- example, replacing the inorganic NPs in the ink with their dis-
formulated ink exhibited the best overall performance with a solvable precursors could greatly alleviate the ink agglomera-
PCE of 3.71%. Thus, developing a proper formulation of multi- tion and clogging of nozzles. Wang et al.30 have fabricated
component inks to tune the morphological properties of the chalcopyrite CuInxGa1−xSe2 (CIGS) thin film solar cells by
inkjet-printed BHJ solar cells is an essential step for the inkjet inkjet printing CIGS precursors on a molybdenum (Mo) elec-
printing of high performance organic photovoltaics. The trode, followed by selenization of the printed CIGS precursor
inclusion of high B. P. additives enables a controlled drying to form CIGS light absorber layers, and deposition of n typed
and thus allows for sufficient time for film formation of the CdS layers and ZnO window layers, as shown in Fig. 6. They
photoactive layer, thereby improving the crystallinity of the achieved inkjet-printed CIGS solar cells with a short circuit
photoactive polymer. Moreover, the wettability of the P3HT: current, open circuit voltage, filling factor, and total area PCE
PCBM inks on the PEDOT:PSS layer could also be enhanced, of 29.78 mA cm−2, 386 mV, 0.44, and 5.04%, respectively.
thus the produced active layer would have high uniformity and Pi et al. have also demonstrated inkjet printing the silicon

970 | Nanoscale, 2017, 9, 965–993 This journal is © The Royal Society of Chemistry 2017
View Article Online

Nanoscale Review

Fig. 6 (a) Fabrication steps of CIGS solar cells. (b) Top view of a real
device. (c) I–V characteristics of the CIGS solar cell. Reproduced with
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

permission from ref. 30, Copyright 2011, Elsevier.

application of the inkjet printing technique in solar cell


fabrication.
In the past decade, hybrid organic–inorganic perovskite
solar cells have emerged as a competitive solution for solar
energy harvesting, with the PCE boosting from the initial 2.2%
to over 20%.33,34 It has been revealed that the ideal photo-
voltaic properties of the perovskite materials (CH3NH3PbI3 and
CH3NH3PbI3−xClx), including appropriate and tunable direct
band gaps, high mobilities of electrons and holes,35 high
Fig. 5 (a) Schematic structure of an all-inkjet-printed, air-processable absorption coefficients, excellent (balanced) carrier transport
organic solar cell and (b) energy level alignment of each component. All diffusion lengths (100 to 1000 nm),36 and high defect toler-
the four layers are produced by a single nozzle inkjet printer and all pro- ance, contributed to the upsurge of the PCE. Furthermore, the
cesses have been conducted in the ambient environment. The AFM perovskite materials are solution-processable, low-cost, and
images of inkjet-printed PCDTBT:PC70BM films (c) spin-coated from
suitable for inkjet printing. Wei et al. have demonstrated
100% CB; (d) spin-coated from a solvent mixture of 50% CB, 40% MT
and 10% CF; and (e) inkjet printing from a solvent mixture of 50% CB, inkjet printing perovskite solar cells with a planar structure
40% MT and 10% CF. Reproduced with permission from ref. 27, where a nanocarbon layer with a precisely controlled pattern
Copyright 2014, John Wiley and Sons. and interface was utilized as the hole-extraction layer, as
shown in Fig. 7a–e.32 They found that the CH3NH3PbI3 photo-
active layer could be readily inkjet-printed and converted by
quantum dots (Si-QD) ink onto polycrystalline Si solar cells, the formulating ink precursor (nanocarbon and CH3NH3I) for
and found that the PCE of polycrystalline Si solar cells could in situ transformation of the PbI2 layer. After printing, an inter-
be improved by 2% (from 17.2% to 17.5%), which was attribu- penetrating seamless interface could be instantly constructed
ted to both the down-shifting absorption band from the UV between the CH3NH3PbI3 active layer and the carbon hole-
zone (<400 nm) to a long wavelength around 773 nm, and also extraction electrode, which remarkably reduced the charge
the absorption enhancement by porous Si-QD films on the recombination, as shown in Fig. 7c, e and f. The final device
solar cell surface.31 The successful demonstration of structure of the TiO2/CH3NH3PbI3/C solar cells is displayed in
inkjet printing of inorganic layers will significantly extend the Fig. 7f. The energy level diagram in Fig. 7g indicates the

Table 1 Effects of additives on performance of inkjet-printed organic solar cells

Printed materials Solvents Additives Performance and reasons

PEDOT:PSS 22
Diluted with 75% DI water — PCE = 3.3%, comparable with that of spin-coated devices.
F8BT:PFB23 p-Xylene — PCE ∼ 2% at a wavelength of 380 nm, which is higher than spin-coated
devices, due to finer phase separation.
P3HT:PCBM24,25 ODCB/mesitylene — PCE = 2.9%–3.5% The solvent mixture controlled ink drying and
Tetralene PCE = 1.29% improved the film morphology.
PCDTBT:PC70BM 27
ODCB/mesitylene — PCE = 4% The addition of chloroform leads to a
Chloroform PCE = 5% homogeneous active layer.
PEDOT:PSS26 Tetralene — PCE = 2.09% The additives improved the surface morphology
Glycerol/EGBE PCE = 3.16% and conductivity of the PEDOT:PSS hole
transporting layer.
P3HT:PCBM28 Chlorobenzene — PCE = 1.97% The additives improved the film morphology, light
ODT PCE = 3.71% absorption and reduced recombination losses.

This journal is © The Royal Society of Chemistry 2017 Nanoscale, 2017, 9, 965–993 | 971
View Article Online

Review Nanoscale

optimizing LED device structures usually needs adjustment of


different layer thicknesses and determination of optimal
device designs. Repeated device fabrication and measurement
procedures are in turn required for the optimization, which
normally consume a lot of time and materials.1 Inkjet print-
ing, which is based on a direct writing process and avoids the
use of any mask, is thus a suitable technique for combinatorial
studies of various devices.39,40
Tekin et al.41 utilized the inkjet printing technique to study
the effects of various side chains and film thicknesses on
the emission properties of six different poly( phenylene-
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

ethynylene)/poly( p-phenylene vinylene) (PPE/PPV)-based


π-conjugated polymers. Thanks to the inkjet printing tech-
Fig. 7 (a) Fabrication flowchart for inkjet printing the C/CH3NH3PbI3 nique, they could examine the influences of various para-
planar perovskite solar cells. For comparison, another fabrication strat-
meters (side chain and film thickness) in a parallel manner.
egy was also demonstrated in a separate step 3 and 4 to convert PbI2
into CH3NH3PbI3; (b) SEM image (cross-section view) of the TiO2 The results suggested that the emission wavelength of the
compact layer deposited by TiCl4 treatment. (c) SEM image (cross- printed polymers was strongly dependent on inter-chain inter-
section view) of the multiple spin-coated TiO2/PbI2 thin film. (d, e) actions which are stronger for thicker films and varied with
Cross-sectional SEM images and the corresponding schematic illus- side chains. In addition, the emission color could be signifi-
tration of inkjet-printed TiO2/CH3NH3PbI3/C solar cells from the C ink
cantly changed by annealing by increasing the aggregation of
(d) and the C + CH3NH3I ink (e); (f ) a basic configuration; (g) energy
level diagram; (h) J–V characteristics; (i) the wavelength-dependent polymer chains.
IPCE profiles of the solar cells respectively fabricated from the C ink and Photoluminescence (PL) of inkjet-printed CdTe NPs was
the C + CH3NH3I ink. Reproduced with permission from ref. 32, demonstrated by the same group.37 An aqueous mixture of sur-
Copyright 2014, John Wiley and Sons. factant stabilized CdTe NPs with 1 wt% polyvinyl alcohol (PVA)
and varied concentrations of ethylene glycol (0–20 vol%) was
inkjet-printed on both ITO and glass. They observed that the
charge transfer and transport processes in the solar cells. coffee-ring formation was drastically suppressed with 2 vol%
When the solar cell is under light excitation, electron–hole of glycol, while films with a lower roughness were only pro-
pairs are generated in the CH3NH3PbI3 layer, and then elec- duced when PVA was included in the mixture, demonstrating
trons and holes will transfer to the conduction band and the the key role of the solvent mixture in controlling the mor-
valence band of CH3NH3PbI3, respectively. Due to the proper phology of the final films. The PL results demonstrated that
energy level alignment, the electron will be injected from the strong emission would come out when CdTe NPs were
conduction band (∼3.86 eV) of CH3NH3PbI3 to the conduction embedded in the PVA matrix. But when poly(diallyldimethyl-
band of TiO2 (∼4.00 eV), and finally collected by the fluorine- ammonium chloride) (PDDA) was used as the matrix, the emis-
doped tin oxide (FTO) glass. Meanwhile, the holes are accepted sion of CdTe NPs was weakened. The enhancement in the PL
by the nanocarbon layer through the C/CH3NH3PbI3 interface intensity of the films where the CdTe NPs were embedded in
from the valence band of CH3NH3PbI3 to C, as shown in PVA was attributed to the increase of the inter-particle space,
Fig. 7g. Consequently, a considerably higher PCE up to 11.60% preventing the inter-particle interaction that results in self-
was produced by the perovskite solar cell, as displayed in quenching of the PL (Fig. 8a). In the films printed from the
Fig. 7h and i. This method demonstrates a major step towards mixture of large particles (3.5 nm) and small particles
fabricating highly efficient perovskite solar cells in a low-cost, (2.6 nm), the gradual decrease of the emission intensity of the
large-scale, metal-electrode-free manner. small particles (green-emitting), and the gradual increase of
The above examples indicated that inkjet printing is a cost- the PL intensity from the larger particles (red-emitting) were
effective processing candidate for the incorporation of photo- observed, indicating the Förster resonant energy transfer
voltaic devices into electronic applications or production of process where the energy transfers from the smaller donor
photovoltaic modules. Though the present performance of NPs to the larger accepter NPs, as shown in Fig. 8b. This
inkjet-printed devices could not fulfill the requirement of com- method in principle can be used for practical LED fabrication,
mercial applications, the progress made thus far is promising. considerably reducing the process and environmental fluctu-
ations and uncertainties in sequential processing of varied
3.2 Light emitting diodes device configurations.
As emerging optoelectronic devices, LEDs could emit light Inkjet printing was also employed to prepare OLEDs based
with high luminous efficacy and brightness. Intensive studies on small molecules which were commonly prepared through
have been carried out for employing semiconductor colloidal vacuum processes. Jung et al.42 demonstrated that fabrication
nanocrystals (NCs) and organic semiconductors as consti- of OLEDs by inkjet printing 5 wt% tris(2-phenylpyridine)
tutional components in LEDs, including the color filter, the iridium(III) (Ir( ppy)3) doped in the 4,4′-bis(carbazol-9-yl)bi-
emitting layer, and the hole-transport layer.1,38 The process of phenyl (CBP) ink as the light emitting material on a 40 nm-thick

972 | Nanoscale, 2017, 9, 965–993 This journal is © The Royal Society of Chemistry 2017
View Article Online

Nanoscale Review

Fig. 9 (a) Emission spectra of devices with ten drops per pixel (dashed
Fig. 8 (a) Optical images of an inkjet-printed library of CdTe NCs/PVA
curve) and 15 drops per pixel (solid curve); (b) luminance vs. applied
composite layers emitting at different wavelengths. The PVA content in
voltage. Inset: An optical photograph of QD LEDs (243 pixels with a
the solution used for printing was systematically varied from left to right
common cathode) at the operation voltage of 12 V. Reproduced with
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

panels in each row: from 0 to 1.4 wt% with an increment step of


permission from ref. 43, Copyright 2009, AIP Publishing LLC.
0.2 wt%. The corresponding molar ratios of PVA/CdTe NCs in the films
are from 0 (0/1.6 × 10−8) to 21.9 with an increment step of 3.12. (b)
Photograph of an inkjet-printed library containing mixed green-and red-
emitting CdTe NCs (top). The corresponding PL spectra (bottom). ratio of octane to hexane in the solvent mixture. The control
Reproduced with permission from ref. 37, Copyright 2006, John Wiley
over luminance and color is critical for specific display appli-
and Sons.
cations and it could be tuned by optimizing the thickness of
the QD–polymer composite layer.
Singh et al.45 fabricated OLEDs by inkjet printing a polymer
4,4′,4″-tris(carbazol-9-yl)triphenylamine (TCTA) hole transport- ink which comprises poly(9-vinylcarbazole) (PVK) as a hole
ing layer. The OLEDs exhibited high performance with high transporting polymer and 2-4-biphenylyl-5-4-tertbutyl-phenyl-
power and the external quantum efficiencies (EQEs) of 1,3,4-oxadiazole (PBD) as an electron transporting polymer. Ir-
29.9 lm W−1 and 11.7% respectively. based phosphorescent macromolecules anchored on a poly-
Haverinen et al.43 have reported bright LEDs from inkjet- hedral oligomeric silsesquioxane (Ir@POSS) molecule were
printed CdSe/ZnS quantum dots (QDs) sandwiched between a also added in the ink as a luminescent dye. The device demon-
hole transporting polymer and a 1,3,5-tris(2-N-phenylbenzimid- strated a peak luminance of more than 6000 cd m−2 with a
azolyl (TPBi)) electron transport layer. Octadecylamine stabil- relatively low turn-on voltage of 6.8 V (defined at a luminance
ized CdSe/ZnS QDs were dissolved in CB and inkjet-printed in of 5 cd m−2), and a quantum efficiency of 1.4%. However, it
air onto the cross-linked poly(N,N′-bis(4-butylphenyl)-N,N′-bis was indicated that the interface roughness (resulting from the
( phenyl)benzidine) ( poly-TPD) layer. Subsequently the printed coffee-ring effect) of the printed layers significantly determines
structure was covered by 20 nm of the TPBi electron transport the device performance. They further boosted the peak lumi-
layer and also a LiF/Al cathode through vacuum deposition. nance to 10 000 cd m−2 with peak quantum efficiencies of
The LEDs showed an EQE and a brightness of 0.19% and around 2.5%.46 Lee et al.47 developed an inkjet printing
381 cd m−2 (at 15.9 V), respectively. Furthermore, inkjet print- technology for realization of multilayer printing (both light
ing of CdSe/ZnS QDs also extended its display applications by emitting layer and hole transporting layer) by controlling the
printing devices on a pre-patterned substrate with a quarter wetting conditions and aligning the multilayer visually. They
video graphics array. The structure of the device was designed have successfully fabricated an OLED and demonstrated the
as glass/ITO/poly-TPD/printed QDs/TPBi/LiF/Al, with 243 basic working of OLEDs by sequentially inkjet printing a hole
pixels under common cathode. The operational voltages which injection layer with the PEDOT:PSS ink and a light emitting
were defined at a brightness of 1 cd m−2 of devices for 10 layer using the poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-
drops per pixel are 6 V and for 15 drops per pixel are 10.6 V. vinylene] (MEH-PPV) ink, although the device could not meet
The maximum brightness of 150 cd m−2 can be obtained at the requirement of commercialization in terms of the bright-
around 12 V and 16 V for the device with 10 and 15 drops per ness and the operating voltage.
pixel, respectively (Fig. 9). This study also demonstrated that Due to good compatibility between the solution process
control of the emitted color could be simply achieved by opti- and the direct patterning method, the inkjet printing method
mizing the number of printed drops per pixel. Wood et al.44 has been developed for OLED multicolor displays. Yang et al.48
reported a planar, full-color alternative current driven-electro- demonstrated the first polymer light emitting logo by inkjet
luminescence display comprising inkjet-printed luminescent printing, wherein the light emitting area was defined by the
CdSe/ZnS QD thin films which first absorb blue electrolumine- printed PEDOT film. Then the inkjet-printed logo was covered
scence from a phosphor layer consisting of ZnS : Cu powders by a spin-coated electroluminescent polymer MEH-PPV
and then emit photons at a longer wavelength characteristic of (serving as buffer layer) to seal the pin-holes. Afterwards they
the CdSe/ZnS QD band gap. They inkjet-printed the CdSe/ZnS extended the inkjet printing technique to fabricate multicolor
QDs and polyisobutylene (PIB) ink on ITO to form the red– OLED displays with controlled patterning of red–green–blue
green–blue emission layers and coated the phosphor layer on multicolor organic light emitting pixels.49 They used the blue-
the top of the QD–PIB composite layer. It was also found that emission PVK as the buffer layer ( prepared by spin-coating),
the coffee-ring effect could be suppressed by optimizing the while the inkjet-printed dopants, 4-dicyanomethylene-2-

This journal is © The Royal Society of Chemistry 2017 Nanoscale, 2017, 9, 965–993 | 973
View Article Online

Review Nanoscale

methyl-6-( p-dimethylaminostyril)-4H-pyran (DCM) and tris


(4-methyl-8-quinolinolato)Al(III)(Almq3), were printed on the
top of the PVK buffer layer. By employing the buffer layer
(blue-emission PVK) as the hole transport layer, multicolor
OLEDs were fabricated, where the orange-red emission was
obtained from the PVK/DCM bilayer structure and green–blue
emission was obtained from the PVK/ALmq3 bilayer structure.
However, the device performance of the inkjet-printed OLEDs Fig. 11 (a) Schematic diagram of the inkjet-printed OLED structure; (b)
light-on image of the 65-inch OLED display panel; (c) the pixel design
could not compete with that of the OLEDs fabricated by the
for the 200-ppi resolution panel. (a–b) are reproduced with permission
thermal sublimation process. Kobayashi et al.50 demonstrated from ref. 52, Copyright 2014, John Wiley and Sons. (c) is reproduced
an OLED display by inkjet printing the light emitting polymer with permission from ref. 53, Copyright 2015, John Wiley and Sons.
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

PPV for a green emitter and PPV with Rhodamine 101(R-PPV)


for a red emitter. Subsequently, poly(di-octyl fluorine) (F8) was
spin-coated on the top of the PPV layer operating as an elec- They found that the resolution of the printed pattern was
tron-transferring layer or a blue emitter. The device was driven determined by the machine accuracy and the drop displace-
by a thin film transistor (TFT) substrate and displayed a multi- ment accuracy. By optimizing the bank angle and width, the
color image using the TFT-LED display. The display panel was droplet displacement accuracy could be improved, further
about 2-inch large with a pixel size of 11 × 82 µm2 and a line enhancing the resolution of the printed patterns. Another
pitch of 52 µm. The brightness of the display was about important factor affecting the resolution is the ink volume
30 cd m−2, consuming 0.7 W of power. which determines the droplet diameter and the final accuracy
Inkjet printing of real full-color LED display with high of the patterns, as displayed in Fig. 11c.
resolution is a stride toward commercial applications. Gohda The resolution could be further improved by optimizing the
et al.51 have demonstrated a 3.6-inch, 202-ppi full-color design of the pixel pattern. In addition, EHD printing which
AMPLED display using the inkjet printing technique. They could generate droplets smaller than the nozzle aperture will
printed three organic layers, a hole transport layer, an inter- provide a solution to printing of LEDs for high-resolution
layer and an emission layer with a 7 picoliter inkjet printhead display. Kim et al.54 demonstrated high-resolution printing of
on a continuous grain-Si active-matrix backplane, as shown in QDs layers with a precisely controlled thickness and lateral
Fig. 10a. High resolution was achieved by utilizing a smaller resolution down to submicron meter as active layers in QD
printhead and also appropriate surface treatment of the sub- LEDs with EHD inkjet printing. The ink composes QDs (CdSe/
strate. The ink formulation is also crucial to control the CdZnSeS green or CdSe/CdS/ZnS red core/shell QDs) dispersed
surface roughness of the printed organic layer, determining in organic solvents. By applying a bias voltage between a sub-
the final performance of the OLED display. By judiciously opti- strate and a metal-coated glass capillary, the ink flow could be
mizing the printing process and ink formulation, they have pulled through the fine opening (e.g., 5 µm) at the end of the
achieved very high resolution (202-ppi) display using the inkjet nozzle. The AFM characterization results suggested that the
printing technique (Fig. 10b). Chen et al.52 also reported an profile of the printed patterns could be precisely controlled
inkjet-printed 65-inch OLED panel with 34 ppi. The panel was with height resolution in tens of nm and lateral resolution in
prepared by inkjet printing solution-processable organic sub-µm. The QD layer thickness is a crucial factor determining
materials for the hole injection layer (HIL), the hole transport- the performance of a QD LED. Arbitrary patterning of QD
ing layer (HTL) and the emitting layers (EML) for multiple layers could be realized by the simultaneously programmed
colors (red, green and blue) on the TFT backplane (Fig. 11a). It movement of the substrate and control of the voltage. The
was discovered that fine-tuning the dry rate in a vacuum after final green QD LEDs consisting of ITO/PEDOT:PSS/TFB/
printing benefits the production of uniform pixels, as shown printed CdSe/CdZnSeS QDs/ZnO/Al showed the maximum
in Fig. 11b. They further successfully demonstrated a 200-ppi luminance and an EQE of 36 000 cd m−2 and 2.5%, respect-
OLED panel fabricated by the inkjet printing technique.53 ively. The maximum luminance and EQE of ITO/PEDOT:PSS/
TFB/printed CdSe/CdS/ZnS QDs/ZnO/Al red QD LED are 11 250
cd m−2 and 2.6%, respectively, as shown in Fig. 12. The EHD
inkjet printing of organic small-molecule OLEDs with a pixel
width as small as 5 µm has also been demonstrated recently.55
EHD inkjet printing of small-molecule emission layers with a
flawless surface and a uniform morphology results in the
highly-efficient and reliable operation of OLEDs surpassing
those OLEDs fabricated by conventional inkjet printing
technology. It is believed that the ability to print high-resolu-
Fig. 10 (a) A cross sectional scratch showing the schematic structure
of an inkjet-printed full-color AMPLED display; (b) an example of the
tion small-molecule OLEDs represents the substantial poten-
picture of a high-resolution display. Reproduced with permission from tial of EHD inkjet printing for high-definition and low-cost dis-
ref. 51, Copyright 2006, John Wiley and Sons. plays in future.

974 | Nanoscale, 2017, 9, 965–993 This journal is © The Royal Society of Chemistry 2017
View Article Online

Nanoscale Review

Table 2 Performance of inkjet-printed LEDs

LED or display
Printed ink structure Performance
49
DCM:Almq3 ITO/PEDOT/PVK/ Luminance is around
DCM:Almq3/Ca 25 cd m−2, EQE is
0.05%, which is lower
than that of devices
fabricated by thermal
evaporation, due to
the presence of the
residual moisture and
oxygen.
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

CdSe/ZnS QDs43 ITO/poly-TPD/printed EQE of 0.19%,


QDs/TPBi (20 nm)/ brightness of 381
LiF (1.5 nm)/ cd m−2 at 15.9 V.
Al (180 nm)
PVK:PBD:Ir@POSS45 ITO/PEDOT:PSS/PVK: Peak luminance is
PBD:Ir@POSS/BCP/ 6000–10 000 cd m−2,
LiF/Al EQE of 1.4%–2.5%,
which is lower than
that of spin-coated
devices, due to the
coffee-ring effect.
CBP:Ir(ppy)342 ITO/TCTA (40 nm)/ EQE is 11.7%, power
CBP:Ir(ppy)3 (20 nm)/ efficiency is 29.9 lm
BCP (10 nm)/Alq3 W−1, comparable
(40 nm)/LiF (1 nm)/Al with that of devices
(100 nm) fabricated by vacuum
deposition.
PPV, R-PPV50 ITO/PEDOT/PPV/F8/ The luminance of the
cathode(blue) 2 inch display was
ITO/PEDOT/R-PPV/ about 30 cd m−2, con-
F8/cathode(green) suming 0.7 W power.
ITO/PEDOT/F8/
cathode(red)
PEDOT–PSS, ITO/PEDOT:PSS Luminance is
interlayer (IL) and (60 nm)/IL (10 nm)/ 200 cd m−2; EQE is
light emitting layer LEP (80 nm)/Ba/Al 4% at the window.
Fig. 12 QD LEDs fabricated by EHD inkjet printing of homogeneous (LEP)51 The addition of high
QD arrays (a, b) schematic illustration and photographic description of boiling point solvents
QD LEDs. (c, d) Electroluminescence images of green and red QD LEDs. results in the flat
surface flatness and
The stage speeds for green and red QDs were 50 μm s−1 and 30 μm s−1,
smooth resultant film
respectively. (e, f ) Plots of current density–voltage ( J–V), luminance– Hole injection layer ITO/HIL/HTL/EML Luminance is
voltage (L–V) and EQE of green QD LEDs. (g, h) Plots of J–V, L–V, and (HIL), the hole (red:green:blue)/ 200 cd m−2.
EQE of red QD LEDs. Reproduced with permission from ref. 54, transporting layer ETL/Al
Copyright 2015, American Chemical Society. (HTL) and the
emitting layers (EML)
for multiple colors
(red, green and
The performance of inkjet-printed LEDs is summarized in blue)52,53
Table 2. The application examples present the promise offered CdSe/CdZnSeS QDs ITO/PEDOT:PSS/ CdSe/CdZnSeS QDs:
and CdSe/CdS/ZnS TFB/printed QDs/ luminance and EQE
by inkjet printing technology for LED fabrication for signage QDs54 ZnO/Al are 36 000 cd m−2
and personalized electronics. The inkjet printing fabrication and 2.5%; CdSe/CdS/
of LEDs has obvious advantages in reducing material costs, ZnS QDs: luminance
and EQE are 11 250
increasing the production speed, flexibility, precision and the cd m−2 and 2.6%.
scale-up ability. However there are still challenges, such as
contamination and parasitic current paths, which are being
addressed through ongoing research in the architecture of
LED devices. As the technology becomes more widely available
and refined, we could expect its impact on industrial coatings, research, to military applications, and thus attracting plenty of
smart surfaces and lighting. attention.56–58 The consideration in designing a photodetector
is application-specific, depending on the sensitivity to light
intensity, on the spectral response and also on the response
3.3 Photodetectors speed. The photodetectors could also be categorized into
Photodetection is extremely important for a wide spectrum of photodiodes and photoconductors based on their operation
applications ranging from environmental and biological mechanisms. Photodetectors have demonstrated their strong

This journal is © The Royal Society of Chemistry 2017 Nanoscale, 2017, 9, 965–993 | 975
View Article Online

Review Nanoscale

impact on current technology in our daily life.59 In this


section, we will highlight the photodetectors realized by inkjet
printing process.
The most commonly used donor–acceptor layer in organic
photodetectors is the P3HT and PCBM blend, because of the
extensive investigations already conducted on organic BHJ
solar cells. Lilliu et al.62 demonstrated organic photodiodes
fabricated by inkjet printing the photoactive BHJ and/or the
hole conducting layer. The device structure featured a stack of
glass/ITO/PEDOT:PSS as the bottom electrode, an inkjet-
printed P3HT:PCBM blend as the photoactive layer, and evapo-
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

rated Ca and Ag as the cathode. They also compared the per-


formance of devices with spin-coated and inkjet-printed
PEDOT:PSS hole transporting layers. The device with the spin-
coated hole transporting layer produced a responsivity of 0.32 Fig. 13 (a) Schematic description of an inkjet-printed photodetector.
A W−1, corresponding to 63% peak EQE, and an inkjet-printed An Ag stripe was used for electrical contact to the PEDOT:PSS layer in
one showed a comparable responsivity of 0.27 A W−1 and an order to minimize resistive losses; (b) optical image of a device: the
dashed square, which is the overlap between the vertical Ag stripe and
EQE of 62%. Wojciechowski et al.63 demonstrated miniatur- the horizontal PEDOT:PSS stripe defines the device area; (c) dark current
ized highly sensitive biosensors with an inkjet printing and photocurrent (incident power density 3 mW cm−2) of the photo-
organic photodiode based on the P3HT:PCBM blend photo- detector. (d) EQE spectrum (squares) measured at a bias of 0.9 V (inci-
active layer and the PEDOT:PSS hole transporting layer. The dent power density: 10 mW cm−2) and a normalized active layer absor-
photodetector showed a responsivity of 0.25 A W−1 at 532 nm. bance (black solid line). Reproduced with permission from ref. 60,
Copyright 2013, John Wiley and Sons.
The miniaturized biosensor system including a disposable
glass slide and the organic photodiode could detect
Staphylococcal enterotoxin B with sensitivity as high as 0.5 ng
mL−1, which is better than the typical ELISA-based laboratory 0.9 V, the EQE higher than 60% in a wide range with a wave-
tests and comparable to sensitivity of the biosensors using length of up to 600 nm, and with a peak of 83% at 525 nm
CCD- and PMT-based detection. (Fig. 13c–d).
A fully inkjet-printed organic photodetector was reported by Apart from the polythiophene based organic light absorb-
Lavery et al.64 They printed Ag NPs as the cathode, a ∼1 µm ing semiconductor, Pace et al.65 demonstrated the possibility
thick blend of PFB and F8BT as the active layer and PEDOT: of inkjet printing active blends comprising fullerenes and
PSS as the top electrode. A fluorosurfactant was introduced to small conjugated molecules. A blend based on a narrow band
the PEDOT:PSS ink to improve the wettability so that PEDOT: gap conjugated molecule 7,7′-(4,4-bis(2-ethylhexyl)-4H-silolo
PSS could also be directly inkjet-printed on the photoactive [3,2-b:4,5-b′] dithiophene-2,6-diyl)bis(6-fluoro-4-(5′-hexyl-[2,2′-
blend with good uniformity. The photodetector worked at a bithiophen]-5-yl)benzo[c][1,2,5]) thiadiazole (T1) and fullerene
high luminance (∼100–400 × 103 lux) and showed an EQE peak PCBM as the photoactive layer, where a small amount of P3HT
of 5.9% at 400 nm with a dark current density of 1 nA cm−2 at was added into the blend to improve the printability of fuller-
1 V reverse bias. The poor uniformity of the inkjet-printed enes and a small conjugated molecule ink on flexible poly-
layer was the main cause to short-circuit or current leakage, ethylene naphthalate (PEN) substrates. A poly(9,9-bis(3′-(N,N-
considering the small thickness of the photoactive layer pre- dimethylamino)propyl)-2,7-fluorene)-(alt-2,7-(9,9-dioctylfluorene))
pared by inkjet printing. Azzellino et al.60 have succeeded in (PFN) was inserted between the bottom electrode and the
inkjet printing of an organic photodiode based on the P3HT: active material as an interlayer to decrease the electrode work
PCBM blend photoactive layer and the PEDOT:PSS hole trans- function difference and enhance its wettability. The spectral
porting layer with much enhanced performance and reprodu- response was extended up to 750 nm, owing to the narrow
cibility by improving the morphology of the photoactive layer band gap small conjugated molecules. In addition, an all-
and the hole conducting layer, as shown in Fig. 13a and b. The organic, semi-transparent device could be fabricated fully by
excellent control obtained in the printing process results in a the inkjet printing method by replacing the Ag bottom elec-
high production yield and reproducibility. An average thick- trode with a printed PEDOT:PSS/PFN electrode. The EQEs were
ness of about 120 nm and a coffee-ring free profile photoactive measured to be 30% and 60% at ∼550 nm for the ternary
P3HT:PCBM blend could be obtained by mixing 1,2-dichloro- blend and a P3HT:PCBM one in the semitransparent configur-
benzene and mesitylene solvents to make use of the ation respectively. Kim et al.66 fabricated organic phototransis-
Marangoni effect, alleviating the coffee-ring effect. Inkjet print- tors with a suspended top-source and drain contact structures
ing of a small volume of the ink and proper post-treatment by inkjet printing a 6,13-bis(triisopropylsilylethynyl) pentacene
could contribute to the high performance of the inkjet-printed (TIPS pentacene) film as the photoactive material. Under a
organic photodetector. The photodetector showed a responsiv- steady-state white light intensity of 9–13 mW cm−2, the photo-
ity of 0.39 A W−1 at 525 nm at a reverse applied bias voltage of transistor outputs a photocurrent to dark current ratio over 106

976 | Nanoscale, 2017, 9, 965–993 This journal is © The Royal Society of Chemistry 2017
View Article Online

Nanoscale Review

and a responsivity of 0.11 A W−1 at a gate voltage of −10 V and Fig. 14g and h. Upon irradiation, drain current raised within
a bias voltage of 1 V. Polymer phototransistors have also been 1 s, however, after light was switched off, drain current did not
achieved by inkjet printing a diketopyrrolopyrrole-thiazolothia- decay to the dark current but stayed at steady level the for at
zole copolymer (PDPPTzBT) as the photoactive layer on a least 104 s, due to the persistent photoconductivity (PPC). The
bottom gate and bottom contact structure.61 The authors first PPC effect could be erased by applying an opposite gate
defined the electrode areas by inkjet printing a pure solvent to voltage.
selectively remove the PMMA photoresist. After electrode depo- Though the organic semiconducting materials are most
sition and lift-off, the channel length could be defined, as commonly utilized to provide a proof-of-concept device fabri-
shown in Fig. 14a–d. With this method, the minimum channel cation feasibility, many inorganic semiconducting materials
width could reach 700 nm. The PDPPTzBT was also deposited are also examined to extend the optical absorption window of
onto the channel area by inkjet printing the ink formulation of photodetectors. Inorganic nanomaterials include NPs,56,58
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

PDPPTzBT in a mixed solvent of dichlorobenzene/toluene (v/v nanowires (NWs),19,28,67–69 nanotubes,70,71 2D


56,72–75
= 95/5), followed by thermal annealing in a glove box filled nanomaterials in which nanoscale phenomena such as
with nitrogen at 120 °C for 5 min (Fig. 14e and f ). The final plasmonic effects and quantum confinement76–78 play a
devices showed a very high responsivity (106 A W−1) under crucial role. Nanostructured materials greatly benefit from the
weak illumination at a wavelength of 650 nm, as displayed in quantum size effect, wherein the band gap and optoelectronic
property of the material are highly size-dependent. The solu-
tion process also enables the inkjet printing of these inorganic
NP inks into the photoactive layer of the photodetector. For
example, Börberl et al.4 fabricated a highly sensitive photo-
detector by inkjet printing the HgTe NPs/CB ink on interdigi-
tated Ti/Au electrodes, they achieved the maximum specific
detectivity of 3.2 × 1010 cm Hz1/2 W−1 under 1 nW of illumina-
tion at 1.4 µm. A six-layer device presented a sensitivity of
65 mA W−1 at 10 V. In addition, the photoresponse behavior of
HgTe NP photodetectors could be well tuned by taking advan-
tage of the size-dependent quantum effect. By changing the
NP size, the responsivity spectrum could be well modulated,
allowing the extension of the spectral response up to 3 μm.
Various NP layers were printed to optimize the film thickness
to absorb sufficient light (Fig. 15). The inorganic NPs such as
CdSe NPs could also been inkjet-printed onto flexible sub-
strates with an office inkjet printer.79
Due to excellent electronic and optical properties, graphene
(G) has been widely investigated as an electrical contact and a
photoactive layer; besides, the solution processibility of gra-
phene oxide (GO) enables fabrication of graphene-based
photodetectors by full inkjet printing technology. Manga et al.
formulated an ionic solution ink by mixing titanium(IV) bis
(ammonium lactate) dihydroxide (TBA) and GO nanosheets,
and printed the ink on coplanar graphene-based electrodes,
producing a fully inkjet-printed photodetector.80 This ink
needs a suitable viscosity to allow for inkjet printing, improv-
ing the solubility of GO in ethanol based solutions and the
rapid hydrolysis of titanate by using aqueous solutions. Finally
the devices were reduced in hydrazine vapor overnight and
then heated in a vacuum to obtain reduced GO (rGO) electro-
des and TiO2-G hybrid films. The final device output showed a
Fig. 14 (a) A layer of PMMA resist (3 nm thick) is spin-coated on a silica
substrate. (b) Organic solvents were inkjet-printed on PMMA to define
peak EQE of 85% and a specific detectivity of 2.33 × 1012 cm
the source and drain electrodes. (c) Subsequent deposition of the Ti Hz1/2 W−1 at around 325 nm. The spectral response of the
adhesion layer and Au electrodes. (d) Lift-off of PMMA by ultrasonic detector was up to a wavelength of 750 nm but detectivity
cleaning. (e) AFM image of the PDPPTzBT film inkjet-printed across the quickly decreased to 9.4 × 1011 cm Hz1/2 W−1 in the visible
channel region (L = 0.7 µm). (f ) The corresponding phase image of the
spectrum range (Fig. 16).
inkjet-printed film. (g) Transfer characteristics of the transistor in the
dark and under illumination. (h) Current response of a device to on/off
In addition to the dissoluble GO, other carbon based
illumination. Reproduced with permission from ref. 61, Copyright 2014, materials have also been printed to function as an electrode in
John Wiley and Sons. fully inkjet-printed photodetectors with inorganic active layers.

This journal is © The Royal Society of Chemistry 2017 Nanoscale, 2017, 9, 965–993 | 977
View Article Online

Review Nanoscale
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

Fig. 16 A two-terminal photodetector produced by inkjet printing with


Fig. 15 (a) Optical image of the interdigitated electrodes overlapped by graphene films as electrodes and TiO2-G hybrid thin films as the chan-
an array of printed NP stripes. (b) I–V-curves of a photodetector with nels. (a) I–V characteristics of a photodetector measured in darkness
6 printed layers in the dark and under illumination with 1 µW and 42 µW. and under white light illumination. Inset: Schematic diagram of the
(c) Sensitivity spectra of devices with 1, 2, 4, and 6 printed layers, bias inkjet-printed graphene-TiO2 photodetector. (b) Photoconductive gain
voltage was 10 V. (d) Plots of the normalized photocurrent spectra of for varying concentrations of graphene in the composite under ambient
another two HgTe NP samples with a larger NP size (HgTePD2: 4 nm, conditions. (c) Detectivity vs. wavelength, with a −5 V bias voltage. (d)
HgTePD3: 6 nm). Reproduced with permission from ref. 4, Copyright Photocurrent under different levels of light illumination. (e)
2007, John Wiley and Sons. Photocurrent response time of a photodetector under 100 mW cm−2
white light illumination. (f ) Plot showing the rise time and fall time of
100 ms. Reproduced with permission from ref. 80, Copyright 2010,
John Wiley and Sons.
An example is demonstrated by Finn et al.81 who inkjet-
printed a planar photoconductor with an ink composed of
liquid-exfoliated MoS2 nanosheets as the photoactive layer and
liquid-exfoliated graphene as the interdigital electrodes. The of −0.35% within 10 s under illumination of the 850 nm laser
fabrication process could be carried out at a lower temperature beam with a power density of 0.5 mW mm−2 at 0.2 V bias. The
(below 70 °C) on a commercial flexible substrate, and the initial resistance can then be fully recovered when the laser
current of the printed photodetector increases by a factor of 10 was turned off after the same time period. The response of the
when exposed to an illumination of 640 mW cm−2 at a wave- CNT based infrared photosensor was attributed a bolometric
length of 532 nm. A mixture of carbon nanotubes (CNT) and effect. Later on, Li et al.84 also demonstrated MoS2 photo-
semiconducting NPs was inkjet-printed as a hybrid photo- detectors by inkjet printing dispersion of liquid-exfoliated
active layer of a hybrid photodetector.82 CNTs were deposited MoS2 nanosheets in terpineol as the photoactive layer, while
via inkjet printing, while NPs were coated by dip-coating dis- inkjet printing the Ag NPs dispersion as electrodes. Upon inci-
persion of CdTe NPs onto the printed substrates. When the dent illumination, the current rises fast, followed by a slow
light is switched on, the change in drain–source voltage was decay, forming the upward peaks. On turning off the incident
examined while keeping the source–drain current at a constant light, the carrier generation rate decreases rapidly and thus
value of 1 mA. The ratio between voltage change and incident carrier recombination dominates, resulting in a rapid decay in
power was around 20 mV W−1 and 15 mV W−1 for phototran- current. Gradually, the thermal release of the trapped carriers
sistors with and without CdTe NPs respectively. Gohier et al.83 contributes to a slow current rise to the original dark current
demonstrated the fabrication of infrared photodetectors by level. This forms the downward valleys.
inkjet printing CNT films on flexible pre-patterned Ag electro- Apart from the above mentioned solution-processable in-
des (deposited by inkjet printing Ag NPs on polyimide (PI) sub- organic NPs and 2D nanomaterials, various light sensitive
strates). The photosensor showed a significant resistance drop metal oxides also have strong competitiveness in inkjet printable

978 | Nanoscale, 2017, 9, 965–993 This journal is © The Royal Society of Chemistry 2017
View Article Online

Nanoscale Review

photodetectors, especially for UV light detection. Indium comparable with that of other devices fabricated by the con-
doped zinc oxide (IZO) films and TiO2 NWs, both exhibiting a ventional techniques, including vacuum deposition and spin-
photoresponse in the UV region, have showcased this possi- coating. The versatility of this technique has been clearly
bility. IZO-based phototransistor fabricated by inkjet printing demonstrated by the reported studies where varied materials,
showed a current on/off ratio of four orders in magnitude, and structures and patterns were used after a systematic optimiz-
the rise and decay times of 5 ms and 10 ms respectively.85 ation of the ink.59 Further effort toward large-scale application
Chen et al.86 demonstrated inkjet printing of high-perform- of this technique lies in improvement in fabrication yield,
ance TiO2 NW based UV photodetectors. They first printed a resolution, and device performance.
commercial Ag NW suspension in isopropanol (IPA) onto flex-
ible and transparent polyethylene terephthalate (PET) sub- 3.4 Transparent electrodes
strates to form the electrode patterns, then another layer of From section 3.1 to section 3.3, we have discussed the recent
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

TiO2 NWs was also inkjet-printed onto the electrode patterns advances in inkjet printing of solar cells, LEDs and also photo-
to fabricate a UV photodetector with >80% visible transmit- detectors. However, apart from the photoactive layer, the trans-
tance. The printed UV photodetectors presented high an on/ parent electrodes (TEs) are also essential elements in various
off ratio of 2000 and also fairly a low dark current of 10−12– optoelectronic devices. In the past decade, the demand for
10−14 A. Under a 2 V bias voltage, the detectors responded to transparent conductive electrodes has been persistently
UV illumination with rise and decay times of 0.4 s and 0.1 s soaring due to the increasingly expanding market of various
respectively. A summary of performance of inkjet-printed daily electronics ranging from touch screen displays to solar
photodetectors is shown in Table 3. cells, and there is no doubt that the market will continue spur-
The above examples confirm the great potential of applying ring in the foreseeable future.2 A general requirement in the
the inkjet printing technique in the photodetector fabrication sheet resistance of TEs is in the range of 10–103 Ω sq−1 at a
process, which allows for the production of a performance transparency of ≥90%, which is also application specific.

Table 3 Performance of inkjet-printed photodetectors

Printed ink Device structure Performance


62
P3HT:PCBM and PEDOT:PSS ITO/PEDOT:PSS/P3HT:PCBM/Ca/Ag Inkjet PEDOT:PSS device: responsivity and EQE are 0.27
A W−1 and 62% at −5 V, which are comparable with that of
devices with spin-coated PEDOT:PSS.
P3HT:PCBM and PEDOT:PSS63 ITO/PEDOT:PSS/P3HT:PCBM/Al Responsivity and EQE are 0.25 A W−1 and 50%–60% at
532 nm.
PFB:F8BT and PEDOT:PSS PEDOT:PSS/PFB:F8BT/Ag EQE is 5.9% at 400 nm with a dark current density of
1 nA cm−2 at 1 V reverse bias.
P3HT:PCBM and PEDOT:PSS60 PEN/Ag/P3HT:PCBM/PEDOT:PSS/Ag Responsivity is 0.39 A W−1 at 525 nm at a reverse bias of
0.9 V, the EQE is in the range of 60%–83%.
T1:P3HT:PC70BM65 PEN/PEDOT:PSS/PFN/T1:P3HT: EQE was measured to be 30%.
PC70BM/PEDOT:PSS
TIPS pentacene66 Au/TIPS pentacene/Au Photocurrent to dark current ratio is higher than 106 and the
phototransistor with ITO/PVP as responsivity is 0.11 A W−1 at a gate voltage of −10 V and a
back gate bias voltage of 1 V
PDPPTzBT61 Au/PDPPTzBT/Au short channel Responsivity is up to 106 A W−1
phototransistor with SiO2/Si as back
gate
Mixture of zinc acetate dehydrate indium Au/IZO/Au, IZO-based The device is effectively turned on in about 5 ms and turned
acetate, and 2-ethanolamine in phototransistor with SiO2/Si as back off in 10 ms. The photosensitivity is about four orders of
isopropanol85 gate. magnitude in the depletion region, 10 times higher than that
in the accumulation region.
HgTe NPs4 Au/HgTe Nps/Au The maximum specific detectivity of 3.2 × 1010 cm Hz1/2 W−1
under 1 nW of illumination at 1.4 µm, responsivity is up to
65 mA W−1 at 10 V.
TBA:GO80 Graphene/TBA:GO/graphene Peak EQE was 85% and specific detectivity was 2.33 × 1012
coplanar TiO2:GO hybrid cm Hz1/2 W−1 at around 325 nm.
photodetectors
Liquid-exfoliated MoS2 and graphene81 Graphene/TBA:GO/graphene Current increased by a factor of 10 when exposed to
coplanar photodetector illumination of a 532 nm laser with an intensity of
640 mW cm−2.
CNT films83 Ag/CNT/Ag photodetector Resistance dropped to −0.35% within 10 s under
illumination of the 850 nm laser beam with a power density
of 0.5 mW mm−2 at 0.2 V bias.
TiO2 NWs and Ag NWs86 Ag/TiO2 NWs/Ag photodetector The on/off ratio is up to 2000 and the low dark current is
around 10−12–10−14 A. Under a 2 V bias, the detectors
responded to UV light with rise and decay times of 0.4 s and
0.1 s respectively.

This journal is © The Royal Society of Chemistry 2017 Nanoscale, 2017, 9, 965–993 | 979
View Article Online

Review Nanoscale

A sheet resistance of 400–1000 Ω sq−1 is adequate for many However, there is always a trade-off between the high conduc-
applications in touch screens, and of 10–50 Ω sq−1 is already tivity and low optical absorption of the film.
suitable for OLEDs and solar cell applications.87,88 Currently, The solvent properties are one the most essential factors
the commercially used TEs in most optoelectronic devices are determining the final film properties. The inclusion of a high
made of ITO, which is usually prepared by vacuum deposition. B.P. solvent to control the wetting behavior, surface tension,
However, there are serious issues related to the use of such evaporation and drying of droplets on the substrate is a widely
ITO-based TEs in terms of sustainable development due to adopted strategy to design the feature of the printed patterns.
both technical and economic restrictions. First, the price of Ummartyotin et al.99 demonstrated PEDOT:PSS films de-
the element indium is becoming more expensive because of its posited by inkjet printing an aqueous dispersion of PEDOT:
ever increasing consumption and scarcity. Second, the ITO PSS NPs. By optimizing the particle size, the surface tension,
deposition process needs to be conducted in a high vacuum at and the viscosity of the ink, PEDOT:PSS films were successfully
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

high temperatures, and usually wastes a large part of the ITO inkjet-printed on flexible cellulous substrates, whilst retaining
source. Furthermore, the brittleness and the high temperature its transparency feature and enhanced the electrical conduc-
process could not be compatible with flexible, and stretchable tivity. Eom et al.26,28 have also systematically investigated
requirements of current optoelectronic devices.89 Inkjet print- inkjet printing of PEDOT:PSS layers, and found that the mor-
ing enabled by a solution process will provide an effective phology and conductivity of the inkjet-printed PEDOT:PSS
alternative to the traditional ITO technology. The expanding films could be well improved by adding high B. P. solvents
class of inks for printing TEs includes conductive organic poly- such as glycerol and the ethylene glycol butyl ether surfactant.
mers, transparent conducting oxides (TCOs), metal NW net- Natori et al.100 found that the conductivity of printed films
works, graphene, and CNTs. In the next section we will briefly also depended on the substrates, for example the conductivity
present TEs fabricated by inkjet printing these nanomaterials of PEDOT:PSS layers printed on PET is different from that of
and their hybrids. the film on polyester. The most significant improvement in
3.4.1 Conductive organic polymer inks. The conductive sheet resistance was realized by printing PEDOT:PSS onto poly-
organic polymers are one of the indispensable components in ester with a small addition of glycerol in the ink. The decrease
current organic optoelectronics. The solution-processibility in the sheet resistance was attributed to the decreased rough-
enables us to build flexible optoelectronics in a large-scale, ness of the substrate and the surfactant glycerol which reduces
cost-effective manner. Several conducting polymers, such as the solution’s surface tension and leads to smoother films.
polypyrrole, polyaniline and PEDOT have been well studied The inkjet-printed PEDOT:PSS films were also explored as
and widely used in optoelectronics. Taking PEDOT as an TEs for various kinds of optoelectronics. The chemical doping
example, its application potential lies in its important pro- of PEDOT:PSS was proven to be an effective method for inkjet
perties such as excellent electrical conductivity, optoelectronic printing the PEDOT:PSS films with high transparency and con-
properties, and thermally stability (up to 230 °C). However, its ductivity simultaneously, toward fabrication of ITO-free opto-
solubility problem has hampered the fabrication involved with electronic devices.101–104 Ma et al.104 fabricated transparent
inkjet printing. This could be overcome by mixing it with a and flexible touch sensors based on inkjet-printed PEDOT:PSS
water-dispersible polystyrene-sulfonate (PSS), by charge-balan- films as TEs and inkjet-printed poly(methylsiloxane) as a
cing counterion doping polymerization, which yields water-dis- dielectric layer. Yoshioka et al.40 have demonstrated the prepa-
persible PEDOT:PSS.90 By appropriate modification, PEDOT: ration of PEDOT:PSS films with area-specific conductivity by
PSS films could possess very good conductivity comparable selectively inkjet printing a hydrogen peroxide ink and varying
with most widely used ITO films while having enough optical the oxidation state of PEDOT:PSS. Jung et al.27 have demon-
transparency, and thus it is a competitive candidate to replace strated that inkjet-printed PEDOT:PSS films could be directly
ITO in optoelectronics.91–93 The formulated PEDOT:PSS used as both hole conducting layers and the anode for organic
aqueous dispersion is very stable in water and has excellent photovoltaic solar cells. They deposited the PEDOT:PSS films
versatility to be deposited into films by various kinds of pro- directly on glass by inkjet printing the ink of the high-conduc-
cesses,94 including spin coating,95,96 spray coating,93 and tivity PEDOT:PSS aqueous suspension as the anode. The
inkjet printing.26,27 inclusion of 5 wt% DMSO and 0.1% fluorosurfactant into the
As a matter of fact, Ballarin et al.97 have found that there ink benefits high conductivity and uniform morphology. By
was no obvious distinction in the surface morphology and printing PEDOT:PSS/PCDTBT:PC70BM/ZnO/Ag layers in
electrochemical characteristics between continuous PEDOT: sequence, the organic solar gave a PCE of 2%; by replacing the
PSS films fabricated by inkjet printing and by spin-coating, inkjet-printed Ag cathode with evaporated Ag, the PCE was
indicating that inkjet-printed PEDOT:PSS films could be an drastically improved to 5%. The interesting observation is that
efficient and clean alternative. The thickness of the PEDOT: the solar cells with an inkjet-printed PEDOT:PSS anode
PSS films increased linearly with the increase of the coating showed comparable performance with those based on ITO
layers. Kwon et al.98 proposed that the resistance of the TEs. Chou et al.105 have reported inkjet printing of PEDOT:PSS
printed PEDOT:PSS films decreased for thicker films, which TEs for OLED with high performance. They found that the
could be attributed to the increased hopping paths for charge addition of the IPA solvent to the aqueous ink could effectively
carrier transport when the thickness of the film increased. adjust the viscosity and surface tension of the ink. They also

980 | Nanoscale, 2017, 9, 965–993 This journal is © The Royal Society of Chemistry 2017
View Article Online

Nanoscale Review

found that the performance of OLEDs of inkjet printing could Among all solution synthetic processes, hot injection has been
be comparable with that of devices fabricated by spin-coating, intensively studied for the synthesis of colloidal NCs in recent
and the sheet resistance of the inkjet-printed films was years. In a typical hot injection synthesis process, a chemical
decreased 10-fold in magnitude, comparing with that prepared reaction will happen between the injected source and the
by the spin-coating technique. Micro-Raman spectroscopic mother solution and NCs will form in a localized environment.
characterization suggested that the improved electric pro- This method has been successfully employed to synthesize
perties were ascribed to a longer effective conjugation length AZO111 and ITO112 NCs with simultaneous control of their size
of PEDOT chains in inkjet-printed PEDOT:PSS films. and doping level. Uniform NC films of up to the centimeter
3.4.2 Metal oxide inks. TCOs are a family of metal–oxide scale have been assembled from these NCs and presented
materials bearing both optical transparency and electrical con- impressive electrical conductivity (356 Ω sq−1) and optical
ductivity, and have been widely used as TEs in various current transparency (93% in visible spectra range) after appropriate
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

daily electronics. A typical TCO group includes the most widely thermal treatment. Ito et al.113 proposed a high-yield hot-injec-
used ITO, FTO, and also aluminum-doped zinc oxide (AZO). tion synthetic process that was able to produced crystalline,
Most scientific studies and current industrial applications monodisperse TCO NCs at a temperature lower than the
mainly involve the vacuum deposition processes, which cause decomposition temperature of the source. A rapid esterifica-
a lot of practical technical issues in applications and also tion reaction was initiated by slowly injecting the metal oleate
bring about the cost and environmental concerns. Inkjet print- complex into oleyl alcohol at 230 °C. This protocol can be used
ing of metal oxides will provide a greener, more efficient, and to synthesize different types of NCs, including ITO, iron oxide
more cost-effective alternative to the current mainstream and ZnO and so on.
vacuum technology. The hot inject synthetic process has two disadvantages.
The ink used for inkjet printing of TCO TEs could be either First, the ability to scale up the process is limited by the small
TCO precursors or synthesized TCO NCs. The synthesis of TCO dose adopted to promote high-quality doping. Second, the
NCs through solution phase processes is a promising strategy doping quality is strongly dependent on the injection para-
for the deposition of TCO films. A typical example of the metal meters and the dopant. The optimization of these parameters
oxide ink which one could come out easily should be the ITO for the preparation of other NCs is highly time-consuming,
ink, because it has been widely used in current optoelectronic thus greatly hindering the scaling up of the production of
devices. The implementation of inkjet printing enables us to various NC inks for industrial applications.
precisely control the position and amount of ITO ink drops, To overcome the limitation of the hot injection method,
which would greatly reduce the material consumption. Kim Song et al.114 developed a general one-pot process for the
et al.106–108 demonstrated the fabrication of ITO TEs for cost- preparation of various kinds of TCO NCs, which could be
efficient organic solar cells by inkjet printing ITO NPs. After readily scaled up to a production of 10 g per pot. The syn-
performing a rapid thermal annealing at 450 °C, they directly thesized TCO NCs (Fig. 17) have good crystallinity, uniform
obtained patterned ITO electrodes with an average transmit- morphology, narrow size distribution, and well-controlled
tance higher than 80% and a sheet resistance of around 200 doping level. The final colloids could sustain good dispersion
Ω sq−1 without using a traditional photolithography process. capability over 1 year and hence could be used as inks to print
Another strategy implemented to reduce the consumption of high-performance TE films. The resulted TCO NC based TEs
the scarce element indium was doping the indium oxide with showed high performance in solution-based devices. Gaspera
other elements.89,109 The transparent zinc- and tin-co-doped et al.115 reported a non-injection synthetic process for the pro-
indium oxide (IZTO) electrode with a sheet resistance of as low duction of monodispersed ZnO-based NCs with Al, Ga, or In
as 20.6 Ω sq−1 and an optical transmittance of up to 81.29% dopants. The synthetic method is highly reproducible and
was obtained by applying rapid thermal annealing on the permits dopant/Zn atomic ratios of over 15%. Another advan-
inkjet-printed IZTO TEs in a nitrogen/oxygen mixture atmo- tage of this method is that the synthesis could be even per-
sphere.109 Titanium (Ti)110 was also used to dope In2O3, after formed at a precursor concentration greater than 0.2 M with
an optimized rapid thermal annealing process, the inkjet- reaction yields higher than 90%. The resulting colloidal dis-
printed Ti-doped In2O3 (ITiO) film showed a sheet resistance persions present good electric conductivity after being
of 37.41 Ω sq−1 and an optical transmittance of 85.40%. These assembled into films and excellent transparency in the visible
results suggested that the degree of interconnection of the spectral range. Luo et al.116 also presented the fabrication of
ITiO NPs critically affects the sheet resistance, optical transpar- high quality TEs by wet-chemical deposition of antimony
ency, and surface morphology of the final ITiO electrode. doped tin oxide (ATO) NCs. They also found that OLED fabri-
The solution synthesis enables one to control the size, mor- cated on ATO NC-based TEs exhibited a performance compar-
phology, and composition of the TCO NCs simultaneously. able to that of commercial ITO-based devices. These above
Other advantages related to the use of TCO NC inks in the mentioned advances indicate the potential of solution pro-
inkjet printing technique include the compatibility with flex- cesses for production of high-quality metal oxide NC colloidal
ible and stretchable substrates, and the simple and straight- inks for ink-jet printing of next-generation TEs. However, the
forward deposition manner. A lot of efforts have been made to as-printed TEs are not suitable for various optoelectronic
synthesize TCO NC inks in solution over the past few years.89 devices. UV treatment could effectively remove the organic

This journal is © The Royal Society of Chemistry 2017 Nanoscale, 2017, 9, 965–993 | 981
View Article Online

Review Nanoscale

the sheet resistance and optical transparency are usually in the


ranges of 1–100 Ω sq−1 and 80–90%,88,120,126–128 respectively,
being comparable with those of ITO films. Because of their
high electrical conductivity and optical transparency, Ag NW-
based TEs serve as good candidates for device integration in
the existing applications. The Ag NW-based TEs were prepared
by drop-casing the Ag NW ink onto a glass substrate followed
by post-deposition annealing at 200 °C for 20 min. The result-
ing TEs presented a sheet resistance in the range of 1–100 Ω
sq−1, which depends on coating density.119 Due to the solution
process and high performance as TEs, the Ag NW networks
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

have been proved to be a promising alternative to the current


ITO-based TEs for organic solar cells.129,130
Compared with Ag NWs, copper (Cu) NWs are less expen-
sive, because the price of Cu is 100 times lower and the abun-
dance of Cu is 1000 times higher, while, the electrical conduc-
Fig. 17 Application of the one-spot method for the synthesis of
tivity of Cu NWs is almost the same as that of Ag NWs, which
different types of TCO NC inks. (a, b) TEM images of ZnO NCs. The inset
in (b) is an HRTEM image of an individual ZnO NC; (c) TEM image of could be good enough for most optoelectronic devices. In this
AZO; (d) TEM image of GZO; (e) TEM image of IZO. The inset in (e) is the regard, the utilization of the Cu NW ink for conductive film
SAED pattern of IZO NCs. (f ) STEM image and elemental mappings of preparation has become popular in recent years.131–133 Two
IZO NCs. (g) TEM image of Ga2O3 NCs; (h) TEM image of In2O3 NCs; (i, j) general approaches have been developed for Cu NW synthesis:
TEM image of ITO NCs; (k) optical image of ITO NC powders synthesized
ethylenediamine (EDA)-mediated and alkylamine-mediated
on a larger scale. (l) Photograph of 30 ml of ITO NC ink re-dispersed in
toluene. Reproduced with permission from ref. 114, Copyright 2015, synthesis. TEs fabricated with Cu NW inks have shown a sheet
John Wiley and Sons. resistance as low as 51 Ω sq−1 at 93% optical transmittance.
However, Cu NW-based conductive films have a serious draw-
back that Cu is less stable in oxygen and moisture ambient
environment than other noble metals. Various strategies have
compounds in the TCO NC films and shorten the interspacing been proposed to improve the stability of Cu NW films. Wiley
between TCO NCs, improving the conductivity of the printed et al.134 proposed that growing a nickel shell-coating on Cu
TCO TEs.117 Short-ligand exchange was also demonstrated to NWs could effectively improve the oxidation resistance of Cu
be a versatile method to increase the conductivity of the NC NWs. Won et al.135 reported the oxidation-resistant Cu NW
films.118 The printed films have a wide spectrum of appli- based composite electrodes with high transparency and con-
cations such as TEs in LEDs, and solar cells without the use of ductivity. The strategy first involved treating of the Cu NWs
any conventional lithography processes, thus indicating that with lactic acid to remove the organic capping layer and the
the inkjet printing of TEs is a viable alternative to the vacuum oxides or hydroxides on the surface of Cu NWs, creating a
sputtering of ITO TEs for various solution-processable opto- direct electrical current transport pathway in the Cu NW
electronic applications. network; subsequently embedding the Cu NWs into the AZO
3.4.3 Metal based inks. Recently, considerable efforts have film to dramatically enhance their stability and resistance to
been made to explore the applications of metal NC inks in oxygen and moisture. The resultant Cu NW@AZO composite
various fields, such as flexible and stretchable electronics, TEs exhibited an impressively low sheet resistance (35.9 Ω
implantable medical devices, flexible and stretchable displays, sq−1) at an optical transmittance of 83.9% at 550 nm. Song
OLEDs, and organic solar cells. Various metal-based inks et al.136 developed a synthetic method to prepare a new
including Au NPs/NWs, Ag NPs/NWs119,120 and Cu NPs/ Cu@Cu4Ni NW conductive elastomer composite with ultrahigh
NWs121,122 have been demonstrated as conductive inks. stability. They synthesized Cu NWs with a protective Cu4Ni
Impressive advances have been made with the corresponding alloy shell in situ grown on Cu NW surface through a one-pot
flexible and stretchable electrodes. method. The final Cu NWs have highly crystalline alloyed
The Ag NW dispersion is possibly the most widely used shells, clear and abrupt interfaces, lengths more than 50 μm,
metal-based conductive ink for TE preparation.123 A typical and smooth surfaces. New elastomers were formed by cladding
synthetic method for Ag NWs is by reducing Ag nitrate in the the Cu@Cu4Ni NW network with polydimethylsiloxane
presence of poly(vinylpyrrolidone) (PVP) in ethylene glycol as (PDMS). The final flexible composite TEs presented a sheet
the reaction medium and reductant.124,125 The as-prepared Ag resistance of 62.4 Ω sq−1 at an optical transparency of 80%
NWs can be well dispersed into diverse solvents, including which are superior to those of typical ITO/PET electrodes.
water, ethanol, and IPA, to prepare suspension inks for inkjet Despite the promising application potential of metal Ag
printing of TEs. The sheet resistance and optical transparency and Cu NWs, the TE enabled by inkjet printing of either Ag or
of the resulting films are critically dependent on the thickness Cu NWs have been rarely demonstrated. Very recently, Finn
and also the post-deposition treatment. For Ag NW-based TEs, et al.128 have reported Ag NW networks prepared by direct

982 | Nanoscale, 2017, 9, 965–993 This journal is © The Royal Society of Chemistry 2017
View Article Online

Nanoscale Review

inkjet printing of the Ag NW ink onto a polymer substrate. tively high sheet resistance (97% at a sheet resistance of
They found that the dilution of the ink suspension and 20 Ω sq−1) have been demonstrated by changing the printing
addition of diethylene glycol (DEG) could improve the print- parameters.
ability of the Ag NW ink. The optimized NW concentration was The coffee-ring effect is normally considered as a negative
0.85 mg ml−1 and the IPA : DEG volumetric ratio was factor in inkjet printing. However, by appropriately designing
0.85 : 0.15, for the best printing performance with stable the coffee-ring pattern, it also helps to form excellent TEs.
droplet generation and movement. The solvent evaporation Layani et al.138 demonstrated that the coffee-ring effect could
during and after deposition is also critical to form a high- be used to inkjet print transparent conductive patterns. The
performance TE film. The intermediate drying step during a TEs were achieved by forming a 2D array of interconnected Ag
print session in a vacuum at a pressure of 0.1 mPa and temp- NP rings. The interconnected Ag patterns were fabricated by
erature of 110 °C for 30 min to slowly evaporate the solvent is inkjet printing the Ag NP ink (0.5 wt%, ∼20 nm Ag NPs) on
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

critical to obtain a conductive Ag NW network. Lu et al.137 plastic substrates. The width and height of the rim of the indi-
demonstrated an inkjet-printed AgNW film as a top electrode vidual rings are less than 10 µm and 300 nm respectively. The
for semitransparent organic solar cells. They found that the diameter of the ‘hole’ surrounded by the rim is about 150 µm;
addition of ethylene glycol into the Ag NW ethanol dispersion thus the whole array of the interconnected rings is highly
was very critical to prevent nozzle clogging. The optical and transparent. The rims of the rings consist of self-assembled,
electrical measurement results showed that the sheet resist- closely packed Ag NPs, making the individual rings and the
ance of the printed Ag NW decreased dramatically from 2190 whole ring array highly conductive. The whole interconnected
Ω sq−1 to 26.4 Ω sq−1 with the increase of printing times from ring array presented a high transparency of 95% and a low
3 to 9, whereas the average transparency of the printed Ag NW sheet resistance of ∼4 Ω sq−1, which were better than those of
films over a 400–800 nm wavelength just decreases slightly traditional ITO TEs. Another strategy to form TEs based on
from 95% to 83%. Note that the 7-time-printed Ag NW layer metal NPs is by printing metal grids with both good optical
has an average sheet resistance of 44.9 Ω sq−1 and an average transmittance and electrical conductivity.
transparency of 86.4%, which are close to that of the widely The current issues with the inkjet printing of metal-based
used ITO electrodes. TEs include the clogging of the printer nozzle due to the high
Metal NP dispersions are ideal inks for inkjet printing of tendency of precipitation of metal contents in the ink, the
conductive traces. Ag NPs were commonly used for electrode rough surface of the printed TEs and also the instabilities in
printing in a wide range of electronic devices.59,88,138–140 the ambient environment. The clogging problem could be alle-
Layani et al.141 also demonstrated inkjet printing of Ag grid viated by proper design of the ink formulation,137 passivation
TEs from the Ag NP ink on transparent plastic substrates. The on the printed surface will help to reduce the surface rough-
inkjet-printed TEs showed a low sheet resistance (1–5 Ω sq−1) ness,144 and the stabilities could be readily improved by
at a high transparency of 83% in the range of 400–800 nm, encapsulation.145–147
which could be superior to those of many TEs used in opto- 3.4.4 CNT based ink. CNTs are composed of one-atom-
electronics. The light reflection on the wide metal grid is the thick sheets of carbon with a hexagonal structure in a cylindri-
main cause for the reduction in the transparency of the metal cal-hollow-wall configuration. There are single-walled CNTs
grid TEs. Shrinking the width of the metal grid line was (SWCNTs) and multi-walled CNTs (MWCNTs), and their length
believed to be an effective method to reduce the light reflec- could range from less than a micrometer to centi-
tion on the metal grid. Jang et al.142 have fabricated invisible meters.70,71,148 For SWCNTs, the electronic properties are
Ag-grid (less than 10 µm) by EHD inkjet printing of Ag NP determined by their chiral structures, one third of them are
inks. As one expected, the improvement in the electrical con- conducting, and two thirds of them are semiconducting. The
ductivity of the TEs was at the cost of the optical transparency intrinsic electrical resistivity was found to be around 10−6
as the Ag-grid pitch decreased. After annealing at 200 °C under Ω cm for individual SWCNT and 3 × 10−5 Ω cm for single
near-infrared, the EHD inkjet-printed 150 µm Ag-grid pitch MWCNT.87,149 Because of their excellent electrical properties,
TEs presented a sheet resistance of 4.87 Ω sq−1 and a transmit- solution processability, mechanical flexibility, and potential
tance of 81.75%. Schneider et al.143 have employed EHD inkjet for low-cost and large-scale production, thin films made of
printing to print Au and Ag grids with line widths from 80 to randomly distributed CNTs were extremely promising for the
500 nm with Au and Ag NP inks. The high-resolution was fabrication of flexible TEs.
achieved with the help of the high resolution NanoDrip print- The printing of CNTs has several advantages, such as low
ing mode. This EHD inkjet printing process demonstrated the material consumption, low equipment costs, high throughput,
capability of printing high-aspect-ratio structures (nanowalls and additive fabrication. CNT inks for high-quality TE printing
or NWs) with a high resolution, significantly decreasing the can be prepared by combining the CNT dispersions with suit-
sheet resistance while maintaining the high-level optical trans- able additives, depending on the required printing method.
parency. The EHD inkjet printing also provided flexibility in The dispersion medium could be water or organic solvents,
designing the application specific TEs, for example, both low and the concentration of CNTs is in a wide range from
sheet resistance with a relatively low transparency (8 Ω sq−1 at 0.01–10 mg ml−1. Concentration limitation is very essential for
a transmittance of 94%) and high transmittance with a rela- most of the printing methods, which require suitable viscosity

This journal is © The Royal Society of Chemistry 2017 Nanoscale, 2017, 9, 965–993 | 983
View Article Online

Review Nanoscale

and surface tensions of the ink (such as inkjet or flexo), but ent back electrode was fabricated by rod coating of MWCNT
less critical compared to screen printing. Despite their high films, and the counter electrode was fabricated by inkjet print-
hydrophobicity and tendency to aggregate, CNTs can be dis- ing MWCNT films on transparent flexible substrates. The elec-
persed well in many solvents by proper surface chemical modi- troluminescent device gave an intense emission after applying
fication or with the help of solubilizing additives, including a bias between the two printed MWCNT electrodes.154
surfactants, cellulose derivatives, and conducting polymers, Similar to the case of inkjet printing of Ag TEs from the Ag
and thus can then be used as inks for printing. Chemical NP ink,138 the coffee-ring effect is also not always a bad thing.
modifications of the CNTs with functional groups favor the Lee et al.161 reported the fabrication of circular rings by inkjet
interactions between CNTs and the dispersing medium. The printing the water-based SWCNT ink. Most of the SWCNT con-
major issue related to organic solvents without using disper- tents concentrated at the rims due to the coffee-ring effect.
sing agents is the low CNT concentration limit, which is lower They found that weak oxidants such as UV/ozone could also be
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

than 0.1 g L−1.2 The advantages of water-based CNT inks able to create oxygen-containing groups on SWCNTs and to
include the high concentration limit and also high safety enhance the dispersion stability of the SWCNTs in a water-
during the printing process. To obtain stable aqueous disper- based solvent. The TEs were achieved by inkjet printing the
sions of CNTs, various kinds of surfactants such as Triton interconnected or stacked rings; a sheet resistance of 870
X-100,150,151 sodium dodecylbenzene sulfonate (SDS),150,152 Ω sq−1 and an optical transparency of 80% (at 550 nm) were
and CTAB,153 were widely used to stabilize the CNT content. achieved in the TEs after 40 prints. Shimoni et al.157 have also
When a surfactant is added into a water-based CNT ink, with inkjet-printed transparent conductive patterns, and arrays of
the help of hydrophobic tails, the surfactant molecules are interconnected CNT circular rings on flexible substrates by
attached onto the surface of each CNT, which create a barrier using the coffee-ring effect. Direct fabrication of these rings
around the perimeter of the CNT to physically mitigate the van was realized by inkjet printing an aqueous-CNT dispersion,
der Waals forces between the CNTs in close proximity. In which concentrated and self-assembled at the rims of the pat-
addition, because of the hydrophilic heads in capping surfac- terns. The electrical performance of the printed CNT films
tants on CNTs, there is a repulsive chemical force between could be much improved by post-printing treatment with hot
CNTs which also helps to stabilize the CNT dispersion. nitric acid, after which a sheet resistance of 156 Ω sq−1 and an
Azoubel et al.154 reported a MWCNT ink with a good inkjet optical transmittance of 81% at 600 nm was achieved. This
printing performance at a concentration of 10 mg ml−1, dis- makes CNT-based TEs very competitive for various electronic
persed in water with a 0.5 wt% polymeric dispersant, and applications, as demonstrated in electroluminescent devices
0.1 wt% of the wetting agent. The printing of CNTs has been (Fig. 18).
well summarized recently by several groups,155,156 here we will Although CNT inkjet printing is relatively new, it has been
only focus on the inkjet printing of CNTs for TE applications. demonstrated to be very promising for printing mechanically
Generally, for SWCNT-based TE films, the sheet resistance flexible and chemically stable TEs. However, there still exist a
and optical transmittance are typically in the range of 60–870 few issues including high sheet resistance, low transparency,
Ω sq−1 and 70–90% respectively, depending on the SWCNT and large roughness. Only after overcoming these issues,
dispersion, the film thickness and the deposition process.
Direct inkjet printing of the CNT ink into patterns was first
demonstrated by Vajtai et al.158 who first chemically modified
the surface of the MWCNT surface using oxidants (HNO3 or
KMnO4) to create oxygen-containing functional groups which
would be beneficial for preparing a stable aqueous MWCNT
ink. Patterns with a sheet resistance of 40 kΩ sq−1 were
achieved by multiple prints. The conductivity of printed
MWCNT-based electrodes could be greatly enhanced by mul-
tiple prints, however, the transparency will degrade accord-
ingly. Some groups even achieved MWCNT-based electrodes
with a sheet resistance less than 1 kΩ sq−1 by printing mul-
tiple layers, the lowest sheet resistance of 78 Ω sq−1 was rea-
lized after a total of 200 prints, as demonstrated by Chen
et al.,159 but the transmittance was only 10%. Mustonen
et al.160 have formulated a composite ink of functionalized
SWCNTs and PEDOT:PSS, and printed composite TEs having a
sheet resistance of 1 kΩ sq−1 and an optical transparency of Fig. 18 (a) Mechanical profilometer result of a printed CNT ring with a
300 nm thickness. (b) The corresponding optical profilometer result of
70% after 30 prints, they could also print higher transparency
the CNT ring. (c) Optical image of printed CNT rings forming a transpar-
patterns (∼90%) with however a much higher sheet resistance ent conductive film. (d) A flexible electroluminescent device prepared by
of ∼10 kΩ sq−1. An electroluminescent device with two printed the printed CNT rings. Reproduced with permission from ref. 157,
CNT electrodes was also demonstrated recently. The transpar- Copyright 2014, Royal Society of Chemistry.

984 | Nanoscale, 2017, 9, 965–993 This journal is © The Royal Society of Chemistry 2017
View Article Online

Nanoscale Review

inkjet printing could become a mature method for CNT depo- graphene based thin films with the ink composed of liquid
sition. The high roughness could be well negated by deposit- phase exfoliated few-layer graphene nanosheets in the organic
ing another layer of transparent conductive materials, for solvent N-methylpyrrolidone (NMP). The merit of this process
example deposition of PEDOT onto the inkjet-printed CNT relies on the high quality of the resultant graphene flakes, due
films could effectively smooth the surface.144 Other post-print- to the oxidization-free process. They used the graphene ink to
ing chemical treatments could also improve the conductivity inkjet print graphene thin film transistors with a mobility of
of CNT films through various mechanisms, including remov- up to ∼95 cm2 V−1 s−1, and also transparent and conductive
ing the organic residues on CNTs and improving the CNT– patterns with an optical transparency of up to 80% and a sheet
CNT contact, or doping the CNT films.144,162,163 resistance of 30 kΩ sq−1. It was found that the wettability of
3.4.5 Graphene based ink. Graphene is a 2D material con- the substrate to the ink is quite critical to the final feature of
sisting of sp2 hybridized carbon atoms with a honey-comb the printed graphene patterns, the silane groups in the mole-
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

lattice.164 Due to its unique structure and superior physical, cular structure of hexamethyldisilazane (HMDS) could
chemical, electronic, and optical properties, graphene has promote the adhesion of metallic particles to the substrate.
been paid plenty of attention since its first exfoliation from Similarly, HMDS may also improve the adhesion between gra-
graphite in 2004.72,73,164–170 Graphene possesses exceptional phene flakes and the substrate, thus promoting the assembly
in-plane conductivity and low sheet resistance even though it of graphene flakes into a regular network. However the ink
only has a single atomic layer. Light absorption by a defect- based on graphene flakes dispersed in organic solvents always
free graphene is estimated to be 2.3% while its sheet resistance suffers from low concentration or toxicity. A high printing
could be as low as 60 Ω sq−1. Recent progress in the prepa- efficiency requires high stability and also a high concentration
ration and characterization of graphene suggest it as one of of the graphene dispersion-based ink. Li et al.181 developed an
best candidates for TE fabrication through solution processes. ink formulation based on graphene flake dispersion in non-
Liquid dispersions of graphene nanosheets could be very toxic terpineol for inkjet printing of graphene patterns. The
promising for deposition by solution processes, including spin graphene ink was prepared by first exfoliating graphite flakes
coating, roll-to-roll processing, and inkjet printing. Bulk graph- in DMF, and exchanging DMF with terpineol to distil due to
ite powder can be exfoliated into single graphene nanosheets the large difference between their boiling points. The gra-
or few-layer graphene flakes, which depends on the exfoliation phene content could be greatly concentrated after solvent
method. The chemical exfoliation of graphite flakes in solvents exchange and distillation. To prevent graphene sheet aggrega-
is the most promising process for large-scale production of tion during DMF evaporation, a certain amount of polymer
graphene and solution-phase processing of a graphene (ethyl cellulose) was added into the graphene/DMF suspension
ink.171–173 as a stabilizer. Finally, the stabilizer can be effectively removed
The first demonstration of inkjet printing of graphene was through a post-printing annealing at 300–400 °C in air for 1 h.
conducted by Huang et al.174 who studied inkjet printing of a After polymer stabilization, graphene/terpineol dispersions
series of graphene-based inks. Under optimized conditions, could reach a concentration of around 1 mg ml−1 and remain
high-quality graphic patterns could be fabricated by inkjet stable for at least several weeks. The resultant inkjet-printed
printing water-soluble single-layered or few-layered GO-based film showed a sheet resistance down to 30 kΩ sq−1 and an
inks on various kinds of flexible substrates, ranging from approximate 80% transmittance at a wavelength of 550 nm.
paper, PET to PI. After thermal reduction, the printed gra- The key factor of controlling the concentration of the gra-
phene-based patterns showed a high electrical conductivity phene dispersion is to prevent the graphene flake from aggre-
which increased with the number of printed layers. More gating. The graphene flakes dispersed in an organic solvent
importantly, these printed patterns retained the same conduc- could be dramatically concentrated by using a specific stabil-
tivity over several bending cycles, indicating their application izer, and the conductivity of the inkjet-printed graphene pat-
potential in flexible TEs. Then Kong et al.175 inkjet-printed gra- terns could also be improved by post-printing annealing.
phene TEs on flexible substrates with GO dispersion in water, A concentrated graphene ink was obtained by liquid exfolia-
and then reduced GO with infrared light at 200 °C for only tion of graphite powders in an environmentally benign solvent
10 min. By optimizing the distance between the adjacent dro- ethanol with ethyl cellulose (EC) as a stabilizer. Subsequently,
plets and the printing layers, the final reduced GO TEs gave a the obtained graphene/EC powders were re-dispersed in a
sheet resistance as low as 0.3 MΩ sq−1 at an optical transpar- mixture with a cyclohexanone : terpineol ratio of 85 : 15, and the
ency of 86%. graphene concentration could be as high as 3.4 mg ml−1.182
One disadvantage of printing the aqueous graphene ink is During solvent evaporation, the polymeric stabilizer EC encap-
that a reduction process (either thermal treatment or chemical sulates the graphene flakes, and thus proper post-printing
reduction) is needed to restore the conductivity of the gra- annealing is needed to restore the electrical conductivity of the
phene sheet,176–179 which is undesirable for many appli- printed graphene films. After a thermal annealing at 250 °C
cations. Few-layer graphene flakes produced by the liquid-exfo- for 30 min, the treated graphene films presented a resistivity
liation method could restore the electrical conductivity of gra- of 4 mΩ cm and a uniform morphology, good compatibility
phene to a large extent and thus present promising application with flexible substrates and also excellent tolerance to
potential in TEs. Torrisi et al.180 reported inkjet printing of bending strains. Majee et al.183 have shown that the a high

This journal is © The Royal Society of Chemistry 2017 Nanoscale, 2017, 9, 965–993 | 985
View Article Online

Review Nanoscale

concentration (up to 3.2 mg ml−1) graphene ink could be light reflection of Ag grids, but is still comparable to the 87%
obtained by shear-exfoliation of graphite powers in the organic transmittance of the pure ITO films. Combinations of Ag grids
solvent NMP with most of the graphene flakes being ∼4 layers with conductive organic films also provide a more effective
thick and 160 nm in diameter. The graphene ink could be well charge collection, due to the filling effect of the conductive
inkjet-printed on various substrates. After 10 prints and a organic matrix. Murali et al.186 developed Ag grid/PEDOT:PSS
thermal annealing at ∼350 °C for 150 min, graphene TEs with TEs by inkjet printing both PEDOT:PSS and Ag NP inks. At an
a sheet resistance of 260 Ω sq−1 and a transparency of 86% Ag grid pitch size of 1 mm, the Ag grid/PEDOT:PSS hybrid TEs
were readily achieved. had a sheet resistance of 10.3 Ω sq−1 and an optical transmit-
The current low performance of inkjet-printed graphene tance of 73% which represented a ∼10% reduction in optical
TEs limits their application in many optoelectronics, such as transmittance compared to that of inkjet-printed Ag-grid free
LEDs, and solar cells; the fabrication of TEs with low sheet PEDOT:PSS films. The organic solar cells based on these
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

resistance and high transmittance remains a critical challenge. hybrid TEs could be comparable with those using ITO. Kahng
Recent progress indicate that inkjet printing of hybrid films et al.187 described the fabrication of hybrid TEs based on
could possibly provide an alternative solution to the issues inkjet-printed Ag grids and CVD grown graphene films, and
with single-component inks. demonstrated their application in organic solar cells. It was
3.4.6 Hybrid inks. Though countless demonstrations of found that the graphene/Ag grid TEs showed a better perform-
inkjet printing of TEs have been reported, and significant pro- ance compared with the Ag grid. The enhancement was attrib-
gress has been made in terms of cost and scalability of the pro- uted to the void filling effect of graphene films on Ag grid elec-
duction, and performance of TEs currently, the performance trodes that have a large void area of ∼2 × 2 mm2 per each
of inkjet-printed TEs has not matched the requirements of square grid pattern. CNTs have also been incorporated into Ag
practically commercial applications. For example, the sheet NW films to enhance the charge transport by providing extra
resistance of the inkjet-printed TCO NC films is not optimal local electron transport pathways between the adjacent Ag
for optoelectronics. The large surface roughness of the metal NWs composing the backbone electrode of Ag NW mesh.188
NW films also applies some limits to optoelectronic device The implementation of this multiscale hierarchical approach,
fabrication. The tube–tube junctions within the CNT bundle which combines the advantages of materials of different
may block the inter-tube charge transport thus increasing the dimensions and of their properties, provides efficient pathways
resistivity of the CNT films. Graphene films also face a similar for electron transport, demonstrating a novel strategy for
dilemma, GO films need high temperature or harsh chemical designing highly stretchable and conductive TEs.
processing to restore the electrical conductivity, the liquid- As we know, the big change with the graphene- and CNT-
exfoliated graphene nanosheets have lower defects, but are based TE technology mainly lies in the fact that it is difficult
smaller in size, degrading the charge transport capability in to achieve good conductivity and high transparency simul-
the printed films. For Ag grids, the large void area tends to fall taneously. For CNT-based electrodes, the tube-to-tube junc-
short in charge collection, the Ag NW films also presents a tion resistance mainly contributes the large sheet resistance
high NW-to-NW junction resistance. Recent progress indicate of the CNT films. As for the graphene based TEs, neverthe-
that inkjet printing of hybrid films could possibly provide an less, because the size of graphene needs to be limited in a
alternative solution to the issues with the development of safe range which is smaller than 1/20 of the diameter of a
transparent conducting technologies. small nozzle, thus the charges need to hop between small
For example, the inkjet-printed Ag grids have excellent elec- graphene sheets, which increases the electrical resistance.180
trical conductivity and transparency, but fall short in rough- Recently, some researchers have shown that some metal NPs
ness and charge collection efficiency. The combination of Ag have the capability to improve the conductivity of carbon
grids with conductive films will be beneficial to alleviate these nanomaterials. Li et al.189 demonstrated that a layer of fine
issues. Jeong et al.184 have proposed a strategy to improve the Au NPs could significantly improve the electrical conductivity
conductivity of the inkjet-printed ITO films by inserting an Ag of CNT fibers, and the Au NPs not only increased the carrier
grid pattern between the inkjet-printed ITO layers, forming density in CNTs, but also facilitated the charge transport
ITO/Ag grid/ITO hybrid TEs. At an Ag grid pitch size of 3 mm, between the CNTs. Ag nanostructures with different mor-
the hybrid electrode presented an impressive sheet resistance phologies have also been included into the graphene
of 2.86 Ω sq−1 with an optical transmittance of 74.06%, and a nanosheets to improve their conductivity though the mechan-
figure of merit of 17.35 × 10−3 Ω−1. Hwang et al.185 also ism is still unclear.123,190–192 Li et al.192 presented a method
implemented a similar scenario to reduce the sheet resistance to assemble Ag nanotriangle platelets (Ag NTP) and Ag poly-
of inkjet-printed ITO TEs by patterning the Ag grid between hedral NPs onto GO to form the ink formulations. After
two ITO layers. With an Ag-grid separation distance of 2 mm, reduction, the inkjet-printed Ag NTP-rGO pattern displays a
the Ag-grid embedded ITO films gave a sheet resistance lower low sheet resistance of 170 Ω sq−1 with a transmittance of
than 3.4 Ω sq−1 after proper post-print annealing. By inserting 90.2%, demonstrating a significant improvement in the per-
the Ag-grid, the electrical properties of the Ag-grid/ITO hybrid formance of graphene-based TEs. Table 4 summarizes the
film (2 mm Ag grid pitch) were significantly improved while performance of various TEs fabricated by inkjet printing
the optical transmittance slightly reduced to 82% due to the techniques.

986 | Nanoscale, 2017, 9, 965–993 This journal is © The Royal Society of Chemistry 2017
View Article Online

Nanoscale Review

Table 4 Performance of inkjet-printed TEs

Printed
materials Solvents Processing conditions or additives Performance
26
PEDOT:PSS Tetralene Glycerol/EGBE The conductivity of PEDOT:PSS increased from 7.82 ×
10−1 to 1.52 × 102 S cm−1 by adding 6 wt% glycerol
and to 1.64 × 102 S cm−1 by adding 0.2 wt% EGBE.
PEDOT:PSS100 Water Glycerol The resistance of printed PEDOT:PSS films decreased
from 4 MΩ m−1 to 0.0134 MΩ m−1 of 10 prints after
being modified by glycerol.
PEDOT:PSS27 Water 5% DMSO and 0.1% fluorosurfactant Additives helped in improving conductivity and
wettability and increasing the solar cell performance.
105
PEDOT:PSS Water IPA Transparency was higher than 90%, resistance of the
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

printed film was 290.63 ± 16.99 × 104 Ω m−2 which is


much lower than that of spin-coated films.
ITO NPs106–108 Ethanol or water Rapidly annealed at 450 °C for A transmittance of ∼85% and a sheet resistance of
4 min. ∼200 Ω sq−1.
ITiO NPs110 Ethanol Rapidly annealed at 500 °C for 4 min A sheet resistance of 37.41 Ω sq−1 and an optical
transmittance of 85.40%
IZTO NPs109 Ethanol Rapidly annealed in N2/O2 at 700 °C A sheet resistance of 20.6 Ω sq−1 and an optical trans-
for 5 min. parency of 81%.
Ag NWs128 IPA Addition of 15% DEG into IPA The lowest sheet resistance was observed to be
8 Ω sq−1, transmittance ∼50%.
Ag NWs137 Ethanol Ethylene glycol A sheet resistance of 44.9 Ω sq−1 at a transparency of
86.4%; a sheet resistance of 26.4 Ω sq−1 at a transpar-
ency of 83%.
Ag NPs138 Water Stabilized by poly(acrylic acid) Ag interconnected rings: a transparency of 95% and a
low sheet resistance of ∼4 Ω sq−1.
Ag NPs 141
Water Stabilized by poly(acrylic acid) Ag grids: a sheet resistance of 1–5 Ω sq−1 at a high
sodium salt transparency of 83% in the range of 400–800 nm.
Ag NPs142 Water Annealing at 200 °C under near- Ag girds: a sheet resistance 4.87 Ω sq−1 and a trans-
infrared mittance of 81.75%.
Ag NPs and Au N-tetradecane Annealed at 150 °C for 10 min for Ag A sheet resistance of 8 Ω sq−1 at a transmittance of
NPs143 grids; annealed at 250 °C for 30 min 94%; a sheet resistance of 20 Ω sq−1 at a transmittance
for gold grids of 97%.
ITO NPs and ITO NPs in water; Ag NPs Annealed at 450 °C in N2/O2 for ITO/Ag grid/ITO film: a sheet resistance of 2.86 Ω sq−1
Ag NPs184 in triethylene glycol 4 min with an optical transmittance of 74.06%, and a figure
monoethyl ether of merit of 17.35 × 10−3 Ω−1 at an Ag grid pitch size of
3 mm.
PEDOT:PSS Water and DMF Annealed at 150 °C for 15 min The PEDOT:PSS/Ag grid/PEDOT:PSS has a sheet
and Ag NPs186 resistance of 10.3 Ω sq−1 and an optical transmittance
of 73%.
MWCNT158 Water Surface modification with HNO3 or A sheet resistance of 40 kΩ sq−1 by multiple prints.
KMnO4
SWCNT 159
Water 1 wt% Sodium dodecyl sulfate A sheet resistance 78 Ω sq−1 at a transmittance of
10%.
PEDOT:PSS: Mixture of ethanol and Surface modification of SWCNT A sheet resistance of 1 kΩ sq−1 and an optical trans-
SWCNT160 water parency of 70% after 30 prints; a transparency of
∼90% with however a much higher sheet resistance of
∼10 kΩ sq−1.
SWCNT161 Water Oxidized with UV/ozone SWCNT interconnected rings: a sheet resistance of
870 Ω sq−1 and an optical transparency of 80% (at
550 nm) after 40 prints.
SWCNT157 Water Surfactants: polymeric dispersant SWCNT interconnected rings: a sheet resistance of
SOLSPERSE 46 000 (1.5 wt%) and 156 Ω sq−1 and an optical transmittance of 81% at
wetting agent Byk 348 (0.2 wt%). 600 nm.
Post-treatment: dipping the samples
for 10 min in 70% HNO3 solution
GO174 Water Reduced in Ar/H2 at 400 °C for 3 h Electrical conductivity: 900 S m−1 after 25 prints.
GO175 Water Reduced with infrared light at 200 °C A sheet resistance of 0.3 MΩ sq−1 at an optical trans-
for only 10 min parency of 86%.
Graphene NMP Treated substrate with HDMS to Thin film transistors with the mobility of up to
nanosheets180 improve adhesion ∼95 cm2 V−1 s−1, an optical transparency up to 80%
and a sheet resistance of 30 kΩ sq−1.
Graphene Terpineol Annealed at 300–400 °C in air for 1 h A sheet resistance down to 30 kΩ sq−1 and approxi-
flakes181 mate 80% transmittance at a wavelength of 550 nm.
Graphene NMP Annealed at 350 °C for 150 min A sheet resistance of 260 Ω sq−1 and a transparency of
nanosheets183 86%.
Ag NPs-GO192 Water Reduced by hydrazine at 110 °C in The printed film has a sheet resistance of 170 Ω sq−1
vacuum for 3 h. with a transmittance of 90.2%.

This journal is © The Royal Society of Chemistry 2017 Nanoscale, 2017, 9, 965–993 | 987
View Article Online

Review Nanoscale

Concerns with TEs prepared with inkjet printing metal- mittance of ∼90% in visible light, demonstrating the merits
based inks include the stability due to oxidation, since Cu and comparable to ITO and Ag NW TEs. In addition, the 2D gra-
Ag are easily oxidized in humid or acidic environments. In phene were also expected to tightly hold metal NWs to
addition, NW-to-NW junction resistance is the main cause to enhance the charge transport between the metal NWs and
the high electrical resistance in transparent metal NW films. create a smooth film surface.195 Liang et al.196 demonstrated
2D graphene nanosheets are transparent, conductive, and the preparation of TEs based on an Ag NW percolation
hydrophilic, and also gas impermeable, and are thus suitable network modified with GO nanosheets. The GO nanosheets
as a coating and a protective layer for metal NW-based TEs.147 wrapped around Ag NWs and soldered the Ag NW junctions
As shown in Fig. 19a, the optical transmittance of Ag NW and thus dramatically reduced the inter-NW junction resist-
based and Ag NW-rGO based TEs almost have no significant ance without heat treatment or mechanical pressing. The GO-
change with the exposure time; however, the sheet resistance wrapped Ag NW network had a sheet resistance of 14 Ω sq−1
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

of Ag NW TEs increased by more than 2.5 times when it is with 88% transparency at a wavelength of 550 nm, indicating
exposed to 70% RH at 70 °C for 8 days; but the sheet resistance the promising application in most fully flexible optoelectronic
of Ag NW-rGO TE films only increased by 50% under the same devices. Thus the inclusion of graphene into metal NW-based
exposure conditions, as displayed in Fig. 19b. Both the Ag electrodes opens a new way to produce large-area, flexible,
NWs and Ag NW-rGO are quite transparent, indicating that the highly conductive and transparent metal NW/graphene TEs.
rGO could not only greatly improve the resistance of Ag NW to Though the examples listed here were not prepared by inkjet
thermal oxidation but also retain the high transparency of the printing, the same strategies could also work well for inkjet-
TE. Lee et al.193 have described hybrid TEs based on graphene printed metal-based TEs.
and Ag NWs, and their uses as transparent and stretchable
electrodes. These graphene-capped Ag NW hybrid TEs showed
excellent electrical properties (sheet resistance ∼33 Ω sq−1),
high transmittance (∼94% in the visible range), robust stability 4. Outlook
against electric breakdown and oxidation, and also impressive
mechanical flexibility and stretchability. Dou et al.194 reported In this review, we have attempted to provide a summary of the
a solution-based approach to wrap the surface of ultrathin Cu applications of the inkjet printing technique in optoelectronics
NWs with GO nanosheets. The solution process offers possi- fabrication. The material deposition processes for opto-
bility for inkjet printing. After deposition, high-quality Cu-rGO electronic device fabrication including solar cells, LEDs,
core–shell NW-based transparent conductive electrodes could photodetectors TEs, etc. currently involve the use of solution
be obtained by reducing the GO through a mild thermal processes (such as spin-coating, spray-coating, doctor blading,
annealing. The core–shell NW structures enabled the pro- and screen printing) or vacuum deposition approaches. In
duction of high-performance, low-cost Cu NW based TEs some cases, inkjet printing which has traditionally been used
which could maintain stability over 200 days in air and have a in the graphical and publishing industries has recently been
sheet resistance of ∼28 Ω sq−1, and a haze of ∼2% at a trans- employed to deposit one or more layers of devices.
Considering the high cost of lithography steps in industrial
manufacturing and the urgency to minimize the number and
complexity of these steps, inkjet printing provides an attrac-
tive, material-conserving alternative for some applications.
Compared with traditional deposition approaches, inkjet print-
ing has many advantages including processing flexibility, low
cost and low material wastage. In addition, inkjet printing is
also an ideal process for depositing a given material on a sub-
strate with pre-existing patterns and devices that would, other-
wise, be contaminated and/or damaged if another deposition
process was used. Nevertheless, the local nature of inkjet print-
ing also brings up issues that do not exist in traditional depo-
sition processing, such as nozzle clogging, coffee-ring effect,
wetting behavior of the ink on the substrate, the feature mor-
phology, resolution and so on. A better understanding of the
fluidic behavior of the droplet flight and the interactions with
the substrate or previously deposited layers is fundamental to
Fig. 19 (a) Transmittance of TE made of Ag NW and Ag NWs-rGO as a advance further development in this very exciting field.
function of time. (b) Sheet resistance of TE made of Ag NW and Ag NW-
Significant progress has been achieved in recent work to allevi-
rGO as a function of exposed time. (c) Optical images of Ag NW (left)
and Ag NW-rGO (right) based films on glass substrates. (d) SEM image of
ate such drawbacks on film quality and device performance, as
Ag-rGO film. Reproduced with permission from ref. 147, Copyright shown in the application examples. Given the impressive
2012, American Chemical Society. recent progress and versatile nature of inkjet printing, we

988 | Nanoscale, 2017, 9, 965–993 This journal is © The Royal Society of Chemistry 2017
View Article Online

Nanoscale Review

anticipate a promising future of this technology in opto- 25 C. N. Hoth, P. Schilinsky, S. A. Choulis and C. J. Brabec,
electronic device fabrication. Nano Lett., 2008, 8, 2806–2813.
26 S. H. Eom, S. Senthilarasu, P. Uthirakumar, S. C. Yoon,
J. Lim, C. Lee, H. S. Lim, J. Lee and S.-H. Lee, Org.
Notes and references Electron., 2009, 10, 536–542.
27 S. Jung, A. Sou, K. Banger, D.-H. Ko, P. C. Y. Chow,
1 M. Singh, H. M. Haverinen, P. Dhagat and G. E. Jabbour, C. R. McNeill and H. Sirringhaus, Adv. Energy Mater.,
Adv. Mater., 2010, 22, 673–685. 2014, 4, 1400432.
2 D. S. Hecht, L. Hu and G. Irvin, Adv. Mater., 2011, 23, 28 S. H. Eom, H. Park, S. H. Mujawar, S. C. Yoon, S.-S. Kim,
1482–1513. S.-I. Na, S.-J. Kang, D. Khim, D.-Y. Kim and S.-H. Lee, Org.
3 G. Konstantatos and E. H. Sargent, Nat. Nanotechnol., Electron., 2010, 11, 1516–1522.
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

2010, 5, 391–400. 29 T. Aernouts, T. Aleksandrov, C. Girotto, J. Genoe and


4 M. Börberl, M. V. Kovalenko, S. Gamerith, E. J. W. List and J. Poortmans, Appl. Phys. Lett., 2008, 92, 033306.
W. Heiss, Adv. Mater., 2007, 19, 3574–3578. 30 W. Wang, Y.-W. Su and C.-H. Chang, Sol. Energy Mater.
5 G. D. Martin, S. D. Hoath and I. M. Hutchings, J. Phys.: Sol. Cells, 2011, 95, 2616–2620.
Conf. Ser., 2008, 105, 012001. 31 X. Pi, L. Zhang and D. Yang, J. Phys. Chem. C, 2012, 116,
6 H. P. Le, J. Imaging Sci. Technol., 1998, 42, 49–62. 21240–21243.
7 J. E. Fromm, IBM J. Res. Dev., 1984, 28, 322–333. 32 Z. Wei, H. Chen, K. Yan and S. Yang, Angew. Chem., Int.
8 N. Reis, C. Ainsley and B. Derby, J. Appl. Phys., 2005, 97, Ed., 2014, 126, 13455–13459.
094903. 33 M. A. Green, A. Ho-Baillie and H. J. Snaith, Nat. Photonics,
9 B.-J. de Gans, E. Kazancioglu, W. Meyer and 2014, 8, 506–514.
U. S. Schubert, Macromol. Rapid Commun., 2004, 25, 292– 34 M. Saliba, S. Orlandi, T. Matsui, S. Aghazada,
296. M. Cavazzini, J.-P. Correa-Baena, P. Gao, R. Scopelliti,
10 J.-U. Park, M. Hardy, S. J. Kang, K. Barton, K. Adair, E. Mosconi, K.-H. Dahmen, F. De Angelis, A. Abate,
D. K. Mukhopadhyay, C. Y. Lee, M. S. Strano, A. Hagfeldt, G. Pozzi, M. Graetzel and M. K. Nazeeruddin,
A. G. Alleyne, J. G. Georgiadis, P. M. Ferreira and Nat. Energy, 2016, 1, 15017.
J. A. Rogers, Nat. Mater., 2007, 6, 782–789. 35 C. S. Ponseca, T. J. Savenije, M. Abdellah, K. Zheng,
11 J. A. Lim, W. H. Lee, H. S. Lee, J. H. Lee, Y. D. Park and A. Yartsev, T. Pascher, T. Harlang, P. Chabera, T. Pullerits,
K. Cho, Adv. Funct. Mater., 2008, 18, 229–234. A. Stepanov, J.-P. Wolf and V. Sundström, J. Am. Chem.
12 R. D. Deegan, O. Bakajin, T. F. Dupont, G. Huber, Soc., 2014, 136, 5189–5192.
S. R. Nagel and T. A. Witten, Nature, 1997, 389, 827–829. 36 G. Xing, N. Mathews, S. Sun, S. S. Lim, Y. M. Lam,
13 D. Pesach and A. Marmur, Langmuir, 1987, 3, 519–524. M. Grätzel, S. Mhaisalkar and T. C. Sum, Science, 2013,
14 Y. Oh, J. Kim, Y. J. Yoon, H. Kim, H. G. Yoon, S.-N. Lee 342, 344–347.
and J. Kim, Curr. Appl. Phys., 2011, 11, S359–S363. 37 E. Tekin, P. J. Smith, S. Hoeppener, A. M. J. van den Berg,
15 Z. Zhang and W. Zhu, J. Alloys Compd., 2015, 649, 687– A. S. Susha, A. L. Rogach, J. Feldmann and U. S. Schubert,
693. Adv. Funct. Mater., 2007, 17, 23–28.
16 J. Zhang, X. Li, X. Sun and Y. Li, J. Phys. Chem. B, 2005, 38 B. J. de Gans, P. C. Duineveld and U. S. Schubert, Adv.
109, 12544–12548. Mater., 2004, 16, 203–213.
17 K. Changjae, N. Masaya and S. Katsuaki, J. Micromech. 39 T. X. Sun and G. E. Jabbour, MRS Bull., 2002, 27, 309–315.
Microeng., 2012, 22, 035016. 40 Y. Yoshioka and G. E. Jabbour, Adv. Mater., 2006, 18,
18 M. Kuang, L. Wang and Y. Song, Adv. Mater., 2014, 26, 1307–1312.
6950–6958. 41 E. Tekin, H. Wijlaars, E. Holder, D. A. M. Egbe and
19 Y.-Y. Noh, N. Zhao, M. Caironi and H. Sirringhaus, Nat. U. S. Schubert, J. Mater. Chem., 2006, 16, 4294–4298.
Nanotechnol., 2007, 2, 784–789. 42 S.-H. Jung, J.-J. Kim and H.-J. Kim, Thin Solid Films, 2012,
20 S. E. Shaheen, R. Radspinner, N. Peyghambarian and 520, 6954–6958.
G. E. Jabbour, Appl. Phys. Lett., 2001, 79, 2996–2998. 43 H. M. Haverinen, R. A. Myllyla and G. E. Jabbour, Appl.
21 V. Marin, E. Holder, M. M. Wienk, E. Tekin, D. Kozodaev Phys. Lett., 2009, 94, 073108.
and U. S. Schubert, Macromol. Rapid Commun., 2005, 26, 44 V. Wood, M. J. Panzer, J. Chen, M. S. Bradley, J. E. Halpert,
319–324. M. G. Bawendi and V. Bulović, Adv. Mater., 2009, 21, 2151–
22 K. X. Steirer, J. J. Berry, M. O. Reese, M. F. A. M. van Hest, 2155.
A. Miedaner, M. W. Liberatore, R. T. Collins and 45 M. Singh, T. Kondou, H. Chae, J. Froehlich, S. Li,
D. S. Ginley, Thin Solid Films, 2009, 517, 2781–2786. A. Mochizuki and G. E. Jabbour, Mater. Res. Soc. Fall
23 Y. Xia and R. H. Friend, Macromolecules, 2005, 38, 6466– Meeting, 2008, vol. G13, p. 7.
6471. 46 M. Singh, H. S. Chae, J. D. Froehlich, T. Kondou, S. Li,
24 C. N. Hoth, S. A. Choulis, P. Schilinsky and C. J. Brabec, A. Mochizuki and G. E. Jabbour, Soft Matter, 2009, 5,
Adv. Mater., 2007, 19, 3973–3978. 3002–3005.

This journal is © The Royal Society of Chemistry 2017 Nanoscale, 2017, 9, 965–993 | 989
View Article Online

Review Nanoscale

47 S. H. Lee, J. Y. Hwang, K. Kang and H. Kang, International 67 C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin,
Symposium on Optomechatronic Technologies, 2009, J. Park, X. Y. Bao, Y. H. Lo and D. Wang, Nano Lett., 2007,
pp. 71–76. 7, 1003–1009.
48 J. Bharathan and Y. Yang, Appl. Phys. Lett., 1998, 72, 2660– 68 X. Huang, C. Tay, Z. Zhan, C. Zhang, L. Zheng,
2662. T. Venkatesan and S. Chua, CrystEngComm, 2011, 13,
49 S. C. Chang, J. Liu, J. Bharathan, Y. Yang, J. Onohara and 7032–7036.
J. Kido, Adv. Mater., 1999, 11, 734–737. 69 X. Huang, Z. Zhan, K. Pramoda, C. Zhang, L. Zheng and
50 H. Kobayashi, S. Kanbe, S. Seki, H. Kigchi, M. Kimura, S. Chua, CrystEngComm, 2012, 14, 5163–5165.
I. Yudasaka, S. Miyashita, T. Shimoda, C. R. Towns, 70 J. An, Z. Zhan, S. V. H. Krishna and L. Zheng, Chem. Eng.
J. H. Burroughes and R. H. Friend, Synth. Met., 2000, J., 2014, 237, 16–22.
111–112, 125–128. 71 J. An, Z. Zhan, H. K. S. V. Mohan, G. Sun, R. V. Hansen
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

51 T. Gohda, Y. Kobayashi, K. Okano, S. Inoue, K. Okamoto, and L. Zheng, J. Mater. Chem. C, 2015, 3, 2215–2222.
S. Hashimoto, E. Yamamoto, H. Morita, S. Mitsui and 72 P. Avouris, Nano Lett., 2010, 10, 4285–4294.
M. Koden, SID Symp. Dig. Tech., 2006, 37, 1767–1770. 73 Q. L. Bao and K. P. Loh, ACS Nano, 2012, 6, 3677–3694.
52 P.-Y. Chen, C.-L. Chen, C.-C. Chen, L. Tsai, H.-C. Ting, 74 Z. Zhan, J. Sun, L. Liu, E. Wang, Y. Cao, N. Lindvall,
L.-F. Lin, C.-C. Chen, C.-Y. Chen, L.-H. Chang, T.-H. Shih, G. Skoblin and A. Yurgens, J. Mater. Chem. C, 2015, 3,
Y.-H. Chen, J.-C. Huang, M.-Y. Lai, C.-M. Hsu and Y. Lin, 8634–8641.
SID Symp. Dig. Tech., 2014, 45, 396–398. 75 Y. Zhang, T. Liu, B. Meng, X. Li, G. Liang, X. Hu and
53 P.-Y. Chen, C.-C. Chen, C.-C. Hsieh, J.-M. Lin, Q. J. Wang, Nat. Commun., 2013, 4, 1811.
Y.-S. Lin and Y. Lin, SID Symp. Dig. Tech., 2015, 46, 1352– 76 Z. Y. Zhan, J. N. An, H. C. Zhang, R. V. Hansen and
1354. L. X. Zheng, ACS Appl. Mater. Interfaces, 2014, 6, 1139–
54 B. H. Kim, M. S. Onses, J. B. Lim, S. Nam, N. Oh, H. Kim, 1144.
K. J. Yu, J. W. Lee, J.-H. Kim, S.-K. Kang, C. H. Lee, J. Lee, 77 C. Tian, D. Jiang, B. Li, J. Lin, Y. Zhao, W. Yuan, J. Zhao,
J. H. Shin, N. H. Kim, C. Leal, M. Shim and J. A. Rogers, Q. Liang, S. Gao, J. Hou and J. Qin, ACS Appl. Mater.
Nano Lett., 2015, 15, 969–973. Interfaces, 2014, 6, 2162–2166.
55 K. Kim, G. Kim, B. R. Lee, S. Ji, S.-Y. Kim, B. W. An, 78 Z. Zhan, L. Liu, W. Wang, Z. Cao, A. Martinelli, E. Wang,
M. H. Song and J.-U. Park, Nanoscale, 2015, 7, 13410– Y. Cao, J. Chen, A. Yurgens and J. Sun, Adv. Opt. Mater.,
13415. 2016, 4, 2021–2027.
56 Z. Zhan, L. Zheng, Y. Pan, G. Sun and L. Li, J. Mater. 79 J. Wu and L. Y. Lin, IEEE Photonics Technol. Lett., 2014, 26,
Chem., 2012, 22, 2589–2595. 737–740.
57 L. Xu, X. Li, Z. Zhan, L. Wang, S. Feng, X. Chai, W. Lu, 80 K. K. Manga, S. Wang, M. Jaiswal, Q. Bao and K. P. Loh,
J. Shen, Z. Weng and J. Sun, ACS Appl. Mater. Interfaces, Adv. Mater., 2010, 22, 5265–5270.
2015, 7, 20264–20271. 81 D. J. Finn, M. Lotya, G. Cunningham, R. J. Smith,
58 Z. Y. Zhan, C. Liu, L. X. Zheng, G. Z. Sun, B. S. Li and D. McCloskey, J. F. Donegan and J. N. Coleman, J. Mater.
Q. Zhang, Phys. Chem. Chem. Phys., 2011, 13, 20471– Chem. C, 2014, 2, 925–932.
20475. 82 E. Katzir, S. Yochelis, Y. Paltiel, S. Azoubel, A. Shimoni
59 K. Fukuda, T. Sekine, D. Kumaki and S. Tokito, ACS Appl. and S. Magdassi, Sens. Actuators, B, 2014, 196, 112–116.
Mater. Interfaces, 2013, 5, 3916–3920. 83 A. Gohier, A. Dhar, L. Gorintin, P. Bondavalli,
60 G. Azzellino, A. Grimoldi, M. Binda, M. Caironi, D. Natali Y. Bonnassieux and C. S. Cojocaru, Appl. Phys. Lett., 2011,
and M. Sampietro, Adv. Mater., 2013, 25, 6829–6833. 98, 063103.
61 H. Wang, C. Cheng, L. Zhang, H. Liu, Y. Zhao, Y. Guo, 84 J. Li, M. M. Naiini, S. Vaziri, M. C. Lemme and M. Östling,
W. Hu, G. Yu and Y. Liu, Adv. Mater., 2014, 26, 4683–4689. Adv. Funct. Mater., 2014, 24, 6524–6531.
62 S. Lilliu, M. Böberl, M. Sramek, S. F. Tedde, 85 Y. Wu, E. Girgis, V. Ström, W. Voit, L. Belova and
J. E. Macdonald and O. Hayden, Thin Solid Films, 2011, K. V. Rao, Phys. Status Solidi A, 2011, 208, 206–209.
520, 610–615. 86 S.-P. Chen, J. R. Duran Retamal, D.-H. Lien, J.-H. He and
63 J. R. Wojciechowski, L. C. Shriver-Lake, M. Y. Yamaguchi, Y.-C. Liao, RSC Adv., 2015, 5, 70707–70712.
E. Füreder, R. Pieler, M. Schamesberger, C. Winder, 87 A. Teichler, J. Perelaer and U. S. Schubert, J. Mater. Chem.
H. J. Prall, M. Sonnleitner and F. S. Ligler, Anal. Chem., C, 2013, 1, 1910–1925.
2009, 81, 3455–3461. 88 A. Kamyshny and S. Magdassi, Small, 2014, 10, 3515–
64 L. L. Lavery, G. L. Whiting and A. C. Arias, Org. Electron., 3535.
2011, 12, 682–685. 89 J. Song and H. Zeng, Angew. Chem., Int. Ed., 2015, 54,
65 G. Pace, A. Grimoldi, D. Natali, M. Sampietro, 9760–9774.
J. E. Coughlin, G. C. Bazan and M. Caironi, Adv. Mater., 90 Y. Yang, Y. Jiang, J. Xu and J. Yu, Colloids Surf., A, 2007,
2014, 26, 6773–6777. 302, 157–161.
66 Y.-H. Kim, J.-I. Han, M.-K. Han, J. E. Anthony, J. Park and 91 J. Ouyang, ACS Appl. Mater. Interfaces, 2013, 5, 13082–
S. K. Park, Org. Electron., 2010, 11, 1529–1533. 13088.

990 | Nanoscale, 2017, 9, 965–993 This journal is © The Royal Society of Chemistry 2017
View Article Online

Nanoscale Review

92 M. Vosgueritchian, D. J. Lipomi and Z. Bao, Adv. Funct. 117 E. Della Gaspera, M. Bersani, M. Cittadini, M. Guglielmi,
Mater., 2012, 22, 421–428. D. Pagani, R. Noriega, S. Mehra, A. Salleo and A. Martucci,
93 J. E. McCarthy, C. A. Hanley, L. J. Brennan, J. Am. Chem. Soc., 2013, 135, 3439–3448.
V. G. Lambertini and Y. K. Gun’ko, J. Mater. Chem. C, 118 J. Lee, M. A. Petruska and S. Sun, J. Phys. Chem. C, 2014,
2014, 2, 764–770. 118, 12017–12021.
94 F. C. Krebs, Sol. Energy Mater. Sol. Cells, 2009, 93, 394– 119 S. De, T. M. Higgins, P. E. Lyons, E. M. Doherty,
412. P. N. Nirmalraj, W. J. Blau, J. J. Boland and J. N. Coleman,
95 G. Li, V. Shrotriya, J. Huang, Y. Yao, T. Moriarty, K. Emery ACS Nano, 2009, 3, 1767–1774.
and Y. Yang, Nat. Mater., 2005, 4, 864–868. 120 L. Yang, T. Zhang, H. Zhou, S. C. Price, B. J. Wiley and
96 P. W. M. Blom, V. D. Mihailetchi, L. J. A. Koster and W. You, ACS Appl. Mater. Interfaces, 2011, 3, 4075–
D. E. Markov, Adv. Mater., 2007, 19, 1551–1566. 4084.
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

97 B. Ballarin, A. Fraleoni-Morgera, D. Frascaro, S. Marazzita, 121 T. Öhlund, A. K. Schuppert, M. Hummelgård,


C. Piana and L. Setti, Synth. Met., 2004, 146, 201–205. J. Bäckström, H.-E. Nilsson and H. Olin, ACS Appl. Mater.
98 I. W. Kwon, H. J. Son, W. Y. Kim, Y. S. Lee and H. C. Lee, Interfaces, 2015, 7, 18273–18282.
Synth. Met., 2009, 159, 1174–1177. 122 S. Jang, Y. Seo, J. Choi, T. Kim, J. Cho, S. Kim and D. Kim,
99 S. Ummartyotin, J. Juntaro, C. Wu, M. Sain and Scr. Mater., 2010, 62, 258–261.
H. Manuspiya, J. Nanomater., 2011, 2011, 606714. 123 T. L. Chen, D. S. Ghosh, V. Mkhitaryan and V. Pruneri,
100 A. Y. Natori, C. D. Canestraro, L. S. Roman and ACS Appl. Mater. Interfaces, 2013, 5, 11756–11761.
A. M. Ceschin, Mater. Sci. Eng. B, 2005, 122, 231–235. 124 Y. Sun and Y. Xia, Adv. Mater., 2002, 14, 833–837.
101 I. A. Grimaldi, A. D. G. Del Mauro, R. Diana, F. Loffredo, 125 J. Lee, I. Lee, T.-S. Kim and J.-Y. Lee, Small, 2013, 9, 2887–
P. Morvillo, F. Villani and C. Minarini, AIP Conf. Proc., 2894.
2012, 1459, 167–169. 126 C. Preston, Z. Fang, J. Murray, H. Zhu, J. Dai,
102 A. De Girolamo Del Mauro, R. Diana, I. A. Grimaldi, J. N. Munday and L. Hu, J. Mater. Chem. C, 2014, 2, 1248–
F. Loffredo, P. Morvillo, F. Villani and C. Minarini, Polym. 1254.
Compos., 2013, 34, 1493–1499. 127 W. J. Scheideler, J. Smith, I. Deckman, S. Chung,
103 J. Ha, J. Park, J. Ha, D. Kim, S. Chung, C. Lee and A. C. Arias and V. Subramanian, J. Mater. Chem. C, 2016,
Y. Hong, Org. Electron., 2015, 19, 147–156. 4, 3248–3255.
104 S. Ma, F. Ribeiro, K. Powell, J. Lutian, C. Møller, T. Large 128 D. J. Finn, M. Lotya and J. N. Coleman, ACS Appl. Mater.
and J. Holbery, ACS Appl. Mater. Interfaces, 2015, 7, 21628– Interfaces, 2015, 7, 9254–9261.
21633. 129 S.-B. Kang, Y.-J. Noh, S.-I. Na and H.-K. Kim, Sol. Energy
105 W.-Y. Chou, S.-T. Lin, H.-L. Cheng, M.-H. Chang, Mater. Sol. Cells, 2014, 122, 152–157.
H.-R. Guo, T.-C. Wen, Y.-S. Mai, J.-B. Horng, C.-W. Kuo, 130 M. Song, D. S. You, K. Lim, S. Park, S. Jung, C. S. Kim,
F.-C. Tang, C.-C. Liao and C.-L. Chiu, Thin Solid Films, D.-H. Kim, D.-G. Kim, J.-K. Kim, J. Park, Y.-C. Kang,
2007, 515, 3718–3723. J. Heo, S.-H. Jin, J. H. Park and J.-W. Kang, Adv. Funct.
106 H.-K. Kim, I.-K. You, J. B. Koo and S.-H. Kim, Surf. Coat. Mater., 2013, 23, 4177–4184.
Technol., 2012, 211, 33–36. 131 A. R. Rathmell and B. J. Wiley, Adv. Mater., 2011, 23,
107 J.-A. Jeong, J. Lee, H. Kim, H.-K. Kim and S.-I. Na, Sol. 4798–4803.
Energy Mater. Sol. Cells, 2010, 94, 1840–1844. 132 Y. Tang, S. Gong, Y. Chen, L. W. Yap and W. Cheng, ACS
108 J.-A. Jeong and H.-K. Kim, Curr. Appl. Phys., 2010, 10, Nano, 2014, 8, 5707–5714.
e105–e108. 133 D. Zhang, R. Wang, M. Wen, D. Weng, X. Cui,
109 J. Kim, S.-I. Na and H.-K. Kim, Sol. Energy Mater. Sol. J. Sun, H. Li and Y. Lu, J. Am. Chem. Soc., 2012, 134,
Cells, 2012, 98, 424–432. 14283–14286.
110 H.-M. Lee, J.-A. Jeong, S.-W. Choi, J. Kim and H.-K. Kim, 134 A. R. Rathmell, M. Nguyen, M. Chi and B. J. Wiley, Nano
J. Sol-Gel Sci. Technol., 2015, 73, 531–535. Lett., 2012, 12, 3193–3199.
111 R. Buonsanti, A. Llordes, S. Aloni, B. A. Helms and 135 Y. Won, A. Kim, D. Lee, W. Yang, K. Woo, S. Jeong and
D. J. Milliron, Nano Lett., 2011, 11, 4706–4710. J. Moon, NPG Asia Mater., 2014, 6, e105.
112 J. Lee, S. Lee, G. Li, M. A. Petruska, D. C. Paine and 136 J. Song, J. Li, J. Xu and H. Zeng, Nano Lett., 2014, 14,
S. Sun, J. Am. Chem. Soc., 2012, 134, 13410–13414. 6298–6305.
113 D. Ito, S. Yokoyama, T. Zaikova, K. Masuko and 137 H. Lu, J. Lin, N. Wu, S. Nie, Q. Luo, C.-Q. Ma and Z. Cui,
J. E. Hutchison, ACS Nano, 2014, 8, 64–75. Appl. Phys. Lett., 2015, 106, 093302.
114 J. Song, S. A. Kulinich, J. Li, Y. Liu and H. Zeng, Angew. 138 M. Layani, M. Gruchko, O. Milo, I. Balberg, D. Azulay and
Chem., Int. Ed., 2015, 127, 472–476. S. Magdassi, ACS Nano, 2009, 3, 3537–3542.
115 E. Della Gaspera, A. S. R. Chesman, J. van Embden and 139 T.-Y. Kim, M. Amani, G. H. Ahn, Y. Song, A. Javey,
J. J. Jasieniak, ACS Nano, 2014, 8, 9154–9163. S. Chung and T. Lee, ACS Nano, 2016, 10, 2819–2826.
116 L. Luo, D. Bozyigit, V. Wood and M. Niederberger, Chem. 140 X. Liu, L. Gu, Q. Zhang, J. Wu, Y. Long and Z. Fan, Nat.
Mater., 2013, 25, 4901–4907. Commun., 2014, 5, 4007.

This journal is © The Royal Society of Chemistry 2017 Nanoscale, 2017, 9, 965–993 | 991
View Article Online

Review Nanoscale

141 M. Layani, P. Darmawan, W. L. Foo, L. Liu, A. Kamyshny, 163 H.-Z. Geng, K. K. Kim, K. P. So, Y. S. Lee, Y. Chang and
D. Mandler, S. Magdassi and P. S. Lee, Nanoscale, 2014, 6, Y. H. Lee, J. Am. Chem. Soc., 2007, 129, 7758–7759.
4572–4576. 164 A. K. Geim and K. S. Novoselov, Nat. Mater., 2007, 6, 183–
142 Y. H. Jang, J. H. Kim and D. Y. Byun, J. Phys. D: Appl. 191.
Phys., 2013, 46, 155103. 165 K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang,
143 J. Schneider, P. Rohner, D. Thureja, M. Schmid, Y. Zhang, S. V. Dubonos, I. V. Grigorieva and A. A. Firsov,
P. Galliker and D. Poulikakos, Adv. Funct. Mater., 2016, 26, Science, 2004, 306, 666–669.
833–840. 166 K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang,
144 D. Zhang, K. Ryu, X. Liu, E. Polikarpov, J. Ly, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos and
M. E. Tompson and C. Zhou, Nano Lett., 2006, 6, 1880– A. A. Firsov, Nature, 2005, 438, 197–200.
1886. 167 K. S. Novoselov, Z. Jiang, Y. Zhang, S. V. Morozov,
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

145 T.-B. Song, Y. S. Rim, F. Liu, B. Bob, S. Ye, Y.-T. Hsieh and H. L. Stormer, U. Zeitler, J. C. Maan, G. S. Boebinger,
Y. Yang, ACS Appl. Mater. Interfaces, 2015, 7, 24601– P. Kim and A. K. Geim, Science, 2007, 315, 1379–1379.
24607. 168 C. H. Lu, H. H. Yang, C. L. Zhu, X. Chen and G. N. Chen,
146 G. Cai, P. Darmawan, M. Cui, J. Wang, J. Chen, Angew. Chem., Int. Ed., 2009, 48, 4785–4787.
S. Magdassi and P. S. Lee, Adv. Energy Mater., 2016, 6, 169 F. Schedin, A. K. Geim, S. V. Morozov, E. W. Hill, P. Blake,
2501882. M. I. Katsnelson and K. S. Novoselov, Nat. Mater., 2007, 6,
147 Y. Ahn, Y. Jeong and Y. Lee, ACS Appl. Mater. Interfaces, 652–655.
2012, 4, 6410–6414. 170 F. Schwierz, Nat. Nanotechnol., 2010, 5, 487–496.
148 L. X. Zheng, M. J. O’Connell, S. K. Doorn, X. Z. Liao, 171 C. Soldano, A. Mahmood and E. Dujardin, Carbon, 2010,
Y. H. Zhao, E. A. Akhadov, M. A. Hoffbauer, B. J. Roop, 48, 2127–2150.
Q. X. Jia, R. C. Dye, D. E. Peterson, S. M. Huang, J. Liu 172 Y. Hernandez, V. Nicolosi, M. Lotya, F. M. Blighe, Z. Sun,
and Y. T. Zhu, Nat. Mater., 2004, 3, 673–676. S. De, I. T. McGovern, B. Holland, M. Byrne, Y. K. Gun’Ko,
149 A. Bachtold, M. Henny, C. Terrier, C. Strunk, J. J. Boland, P. Niraj, G. Duesberg, S. Krishnamurthy,
C. Schönenberger, J.-P. Salvetat, J.-M. Bonard and R. Goodhue, J. Hutchison, V. Scardaci, A. C. Ferrari and
L. Forró, Appl. Phys. Lett., 1998, 73, 274–276. J. N. Coleman, Nat. Nanotechnol., 2008, 3, 563–568.
150 R. Rastogi, R. Kaushal, S. K. Tripathi, A. L. Sharma, 173 V. C. Tung, M. J. Allen, Y. Yang and R. B. Kaner, Nat.
I. Kaur and L. M. Bharadwaj, J. Colloid Interface Sci., 2008, Nanotechnol., 2009, 4, 25–29.
328, 421–428. 174 L. Huang, Y. Huang, J. Liang, X. Wan and Y. Chen, Nano
151 H. Wang, W. Zhou, D. L. Ho, K. I. Winey, J. E. Fischer, Res., 2011, 4, 675–684.
C. J. Glinka and E. K. Hobbie, Nano Lett., 2004, 4, 1789– 175 D. Kong, L. T. Le, Y. Li, J. L. Zunino and W. Lee, Langmuir,
1793. 2012, 28, 13467–13472.
152 M. F. Islam, E. Rojas, D. M. Bergey, A. T. Johnson and 176 G. Eda, G. Fanchini and M. Chhowalla, Nat. Nanotechnol.,
A. G. Yodh, Nano Lett., 2003, 3, 269–273. 2008, 3, 270–274.
153 A. G. Ryabenko, T. V. Dorofeeva and G. I. Zvereva, Carbon, 177 S. Stankovich, D. A. Dikin, R. D. Piner, K. A. Kohlhaas,
2004, 42, 1523–1535. A. Kleinhammes, Y. Jia, Y. Wu, S. T. Nguyen and
154 S. Azoubel, S. Shemesh and S. Magdassi, Nanotechnology, R. S. Ruoff, Carbon, 2007, 45, 1558–1565.
2012, 23, 344003. 178 G. Sun, L. Zheng, Z. Zhan, J. Zhou, X. Liu and L. Li,
155 R. Tortorich and J.-W. Choi, Nanomaterials, 2013, 3, 453. Carbon, 2014, 68, 748–754.
156 K. Chen, W. Gao, S. Emaminejad, D. Kiriya, H. Ota, 179 H. A. Becerril, J. Mao, Z. Liu, R. M. Stoltenberg, Z. Bao
H. Y. Y. Nyein, K. Takei and A. Javey, Adv. Mater., 2016, 28, and Y. Chen, ACS Nano, 2008, 2, 463–470.
4397–4414. 180 F. Torrisi, T. Hasan, W. Wu, Z. Sun, A. Lombardo,
157 A. Shimoni, S. Azoubel and S. Magdassi, Nanoscale, 2014, T. S. Kulmala, G.-W. Hsieh, S. Jung, F. Bonaccorso,
6, 11084–11089. P. J. Paul, D. Chu and A. C. Ferrari, ACS Nano, 2012, 6,
158 K. Kordás, T. Mustonen, G. Tóth, H. Jantunen, 2992–3006.
M. Lajunen, C. Soldano, S. Talapatra, S. Kar, R. Vajtai and 181 J. Li, F. Ye, S. Vaziri, M. Muhammed, M. C. Lemme and
P. M. Ajayan, Small, 2006, 2, 1021–1025. M. Östling, Adv. Mater., 2013, 25, 3985–3992.
159 P. Chen, H. Chen, J. Qiu and C. Zhou, Nano Res., 2010, 3, 182 E. B. Secor, P. L. Prabhumirashi, K. Puntambekar,
594–603. M. L. Geier and M. C. Hersam, J. Phys. Chem. Lett., 2013,
160 T. Mustonen, K. Kordás, S. Saukko, G. Tóth, J. S. Penttilä, 4, 1347–1351.
P. Helistö, H. Seppä and H. Jantunen, Phys. Status Solidi 183 S. Majee, M. Song, S.-L. Zhang and Z.-B. Zhang, Carbon,
B, 2007, 244, 4336–4340. 2016, 102, 51–57.
161 Y.-I. Lee, S. Kim, K.-J. Lee, N. V. Myung and Y.-H. Choa, 184 J.-A. Jeong, J. Kim and H.-K. Kim, Sol. Energy Mater. Sol.
Thin Solid Films, 2013, 536, 160–165. Cells, 2011, 95, 1974–1978.
162 M. H. A. Ng, T. H. Lysia, T. Huiwen and C. H. P. Poa, 185 M.-S. Hwang, B.-Y. Jeong, J. Moon, S.-K. Chun and J. Kim,
Nanotechnology, 2008, 19, 205703. Mater. Sci. Eng. B, 2011, 176, 1128–1131.

992 | Nanoscale, 2017, 9, 965–993 This journal is © The Royal Society of Chemistry 2017
View Article Online

Nanoscale Review

186 B. Murali, D.-G. Kim, J.-W. Kang and J. Kim, Phys. Status 191 R. Chen, S. R. Das, C. Jeong, M. R. Khan, D. B. Janes and
Solidi A, 2014, 211, 1801–1806. M. A. Alam, Adv. Funct. Mater., 2013, 23, 5150–
187 Y. H. Kahng, M.-K. Kim, J.-H. Lee, Y. J. Kim, N. Kim, 5158.
D.-W. Park and K. Lee, Sol. Energy Mater. Sol. Cells, 2014, 192 L. Li, Y. Guo, X. Zhang and Y. Song, J. Mater. Chem. A,
124, 86–91. 2014, 2, 19095–19101.
188 P. Lee, J. Ham, J. Lee, S. Hong, S. Han, Y. D. Suh, 193 M.-S. Lee, K. Lee, S.-Y. Kim, H. Lee, J. Park,
S. E. Lee, J. Yeo, S. S. Lee, D. Lee and S. H. Ko, Adv. Funct. K.-H. Choi, H.-K. Kim, D.-G. Kim, D.-Y. Lee,
Mater., 2014, 24, 5671–5678. S. Nam and J.-U. Park, Nano Lett., 2013, 13, 2814–
189 Q. W. Li, Y. Li, X. F. Zhang, S. B. Chikkannanavar, 2821.
Y. H. Zhao, A. M. Dangelewicz, L. X. Zheng, S. K. Doorn, 194 L. Dou, F. Cui, Y. Yu, G. Khanarian, S. W. Eaton,
Q. X. Jia, D. E. Peterson, P. N. Arendt and Y. T. Zhu, Adv. Q. Yang, J. Resasco, C. Schildknecht, K. Schierle-Arndt
Published on 07 December 2016. Downloaded by Cinvestav IPN on 07/04/2017 22:22:23.

Mater., 2007, 19, 3358–3363. and P. Yang, ACS Nano, 2016, 10, 2600–2606.
190 I. N. Kholmanov, C. W. Magnuson, A. E. Aliev, H. Li, 195 I. K. Moon, J. I. Kim, H. Lee, K. Hur, W. C. Kim and
B. Zhang, J. W. Suk, L. L. Zhang, E. Peng, S. H. Mousavi, H. Lee, Sci. Rep., 2013, 3, 1112.
A. B. Khanikaev, R. Piner, G. Shvets and R. S. Ruoff, Nano 196 J. Liang, L. Li, K. Tong, Z. Ren, W. Hu, X. Niu, Y. Chen
Lett., 2012, 12, 5679–5683. and Q. Pei, ACS Nano, 2014, 8, 1590–1600.

This journal is © The Royal Society of Chemistry 2017 Nanoscale, 2017, 9, 965–993 | 993

Vous aimerez peut-être aussi