AO3409

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO3409/L uses advanced trench technology to VDS (V) = -30V

provide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V)
device is suitable for use as a load switch or in PWM RDS(ON) < 130mΩ (VGS = -10V)
applications. AO3409 and AO3409L are electrically RDS(ON) < 200mΩ (VGS = -4.5V)
identical.
-RoHS Compliant
-AO3409L is Halogen Free

D
TO-236
(SOT-23)
Top View

G
D G
S S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C -2.6
Current A TA=70°C ID -2.2 A
Pulsed Drain Current B IDM -20
TA=25°C 1.4
A
PD W
Power Dissipation TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 70 90 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 100 125 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 63 80 °C/W

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AO3409

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.4 -1.9 -3 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -5 A
VGS=-10V, ID=-2.6A 97 130
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 135 150
VGS=-4.5V, ID=-2A 166 200 mΩ
gFS Forward Transconductance VDS=-5V, ID=-2.5A 3 3.8 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.82 -1 V
IS Maximum Body-Diode Continuous Current -2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 302 370 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 50.3 pF
Crss Reverse Transfer Capacitance 37.8 53 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 6 12 18 Ω
SWITCHING PARAMETERS
Qg(10) Total Gate Charge(10V) 6.8 9 nC
Qg(4.5) Total Gate Charge(4.5V) 2.4 3.1 nC
VGS=-10V, VDS=-15V, ID=-2.6A
Qgs Gate Source Charge 1.6 nC
Qgd Gate Drain Charge 0.95 nC
tD(on) Turn-On DelayTime 7.5 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=5.8Ω, 3.2 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17 ns
tf Turn-Off Fall Time 6.8 ns
trr Body Diode Reverse Recovery Time IF=-2.6A, dI/dt=100A/µs 16.8 22 ns
Qrr Body Diode Reverse Recovery Charge IF=-2.6A, dI/dt=100A/µs 10 nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 8: Feb 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO3409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20 10
-8V VDS=-5V
-10V
8
15 -6V 25°C
6
-ID (A)

-ID(A)
10 -5.5V
-5V 125°C
VGS=-4.5V 4

5 -4V
-3.5V 2

-3.0V
0 0
0 1 2 3 4 5 1 2 3 4 5 6
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
370
250 1.6

18
Normalized On-Resistance

VGS=-10V
200 1.4
9
RDS(ON) (mΩ )

VGS=-4.5V
150 1.2
VGS=-4.5V

ID=-2A
100 1
VGS=-10V

50 0.8
0 1 2 3 4 5 6 0 25 50 75 100 125 22
150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

300 1.0E+01

250 1.0E+00

ID=-2A 1.0E-01
200
RDS(ON) (mΩ )

125°C 1.0E-02
-IS (A)

150 125°C 25°C

1.0E-03
100
25°C 1.0E-04

50 1.0E-05

0 1.0E-06
3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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AO3409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 500
VDS=-15V
9
ID=-2.6A
8 400
Ciss

Capacitance (pF)
7
-VGS (Volts)

6 300
5
4 200
3
Coss
2 100
1
Crss
0 0
0 1 2 3 4 5 6 7 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
370

100.0
TJ(Max)=150°C 20
TA=25°C TJ(Max)=150°C
18
TA=25°C
15
10.0 RDS(ON) 100µs 9
10µs
Power (W)
-ID (Amps)

limited
1ms
10
0.1s 10ms
1.0
1s 5
10s
DC
0
0.1
0.001 0.01 0.1 1 10 100
22 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=90°C/W
Thermal Resistance

PD
0.1

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

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