Taiyo Yuden MMIC

Transmitter/Receiver Design
Review and Measurement
Results

Authors: T.Ogino, A. Kanai, K. Nakajima, K. Ohta: Taiyo Yuden

Aki Nakatani: Ansoft
Alain Michael:Ansoft France
Moriaki Ueno: Ansoft Japan

Presenter: Philip Smith: Ansoft

Page-1
 Contents

1. Millimeter-Wave MMICs
• Design Environment
• Measurement/Evaluation Technologies
2. Design and Evaluation
• Millimeter-Wave MMICs
3. Summary

Page-2
Design Environment

Millimeter-Wave MMICs
Measurement/Evaluation
Technologies

Page-3
 Millimeter Wave applications

60GHz • Video Transmission Systems

• Wireless link for BS/CS satellite broadcasts
• Communication among Buildings

•• 7GHz
7GHz band
band available
available without
without license.
license.
•• Japan:
Japan: 59-66GHz
59-66GHz USA:
USA: 57-64GHz
57-64GHz
•• Less
Less interference
interference with
with other
other wireless
wireless systems
systems

77GHz Automotive Radar

94GHz Image Sensor, High Resolution Radar

Page-4
 Characteristics of Millimeter-Wave
Circuits
Frequency > 30GHz
Short Wavelength
Parasitic Components
On the order of pH/fF
Cannot be ignored
Accuracy of
Elements/Circuits/Connections
Process/Mounting/Measurement…

Superior Measurement/Evaluation technologies

are necessary at Millimeter-Wave frequencies.

Page-5
 Design Features of
Millimeter-Wave MMICs

Characterization of all MMIC

circuit blocks is critical.
Systems, Tr characteristics, VCO, Mixer, LNA, PA, Filters, Antennas…

Development; Cost; Faster

time to market…

Millimeter-Wave circuit design requires

robust development environment

Page-6
 Design Development
Environments for
Millimeter-Wave MMICs

Page-7
 Establishment
Establishment of
of
Millimeter-Wave MMIC
Millimeter-Wave MMIC Design
Design
Environments
Environments
TAIYO YUDEN
Requests, Proposals

UMS Ansoft
Information Supplement Development of DK for AD

UMS PH15 design kit

Ansoft Designer / Nexxim ver.3

Page-8
 Millimeter-Wave MMIC Design Environments
MMIC Foundry
United Monolithic Semiconductors (UMS)
GaAs Foundry Service at UMS
Q Excellent track record in manufacturing
Millimeter-Wave MMICs

Q Proprietary technologies and expertise

- 0.25um and 0.15um Supporting processes including:
pHEMT - Air bridges
- 2um HBT - MIM capacitors
- Schottky diode - TaN and TiWSi resistors
- 100um thinning
- Via-holes
Q Design manuals and Design Kit 80GHz Support
PH15 Process
Q Quality Control System for Wafers by PCM:
– Test production
– ASIC

Q Additional Service Available:

– 100% on-wafer testing (DC, RF and Power)
– Dicing and Sorting
– Visual Inspection

Page-9
 Millimeter-Wave MMIC Design Environments
Ansoft Designer /Nexxim ver. 3

NEXXIM Circuit DESIGNER

Integrated Environment
Simulator • Schematic Editor
• Layout Editor
• System / 2.5D Planar EM

High speed
Nonlinear Analysis Layout changes are
reflected in real time. Co-simulation
with Planar EM and
••Speed
Speedupupdesign
designprocess
process HFSS
•• High-Speed
High-SpeedNonlinear
NonlinearAnalysis
Analysis
••Seamless integration
Seamless integration
•• Circuit
Circuitanalysis
analysis
•• Layout
Layout
•• Electromagnetic
ElectromagneticField
FieldSimulation
Simulation

Page-10
 UMS PH15 DK for AD/Nexxim ver. 3
Passive Element Example
GaAs Resistance: Part name=PH15RES

Unit: 1um
FixR=yes
W/L changed to meet resistance value
FixR=no
Resistance value changed to meet size
ph15res_T is changed
R is changed according to temperature.
Min Size of W/L: 10um
These changes are reflected to the
Layout in real time.

Page-11
 UMS PH15 DK for AD/Nexxim ver.3
Nonlinear Element Example
PH15 HOTFET: Part name=PH15HFET

Schematic
&
Layout

Page-12
UMS PH15 DK for AD/Nexxim ver.3
Microstrip Elements

Page-13
 Millimeter-Wave Band
Measurement/Evaluation
Technologies

Page-14
 Millimeter-Wave Band
Measurement/Evaluation Technology
Technology for High Resolution Measurement
SOLT
Calibration

Open Load

Short Through

Electrical Length 1 degree = 5um @ 60GHz

(Thickness of GaAs Substrate 100um)
Contact position must be accurately controlled
Page-15
 Measurement/Evaluation Technology of
Millimeter-Wave Band

Technology for Accurate Compensation

Reference Reference
Plane Plane

DUT DUT

Measurement Data Pad Data DUT Data

Page-16
 Compensation Method

Impedance
Phase Loss Mismatch
Electrical Length

Electrical Length
and Magnitude

De-embedding

Equivalent Circuit for Pad De-embedding

Page-17
 Extraction of pad data

Excess
Inductance
Thru Open Short

De-embedding
Easier?
Pad Equivalent circuit more accurate?
Page-18
Problem Definition

Measurement References

Unknown Circuit

γλ γλ
Z u1 Zu3 Z C tanh Z C tanh Zu3 Z u1
2 2

Zu2
Zu2
2Z C cosechγλ 2Z C cosechγλ

Symmetric Plane
Transmission Line: Characteristic Impedance and
Transmission coefficients are known
Page-19
 Easy-to-use approach
using Ansoft Designer
Uses
Uses two
two Known
different
different length
length Transmission Lines
lines
lines with
with pads
pads

Length1 Length2

S-parameter de-embedding
Pad

Page-20
Principle of this method

Virtual Open and Short Conditions

Page-21
 Easy-to-use approach
using Ansoft Designer
Ideal Data (two different length lines)

from HFSS

100um 150um Case A 200um

Case B 300um

Measured Data (two different length lines with pads)

Algorithm integration in AD project

Page-22
Verifying the Connector Extraction with
Measured Results

Reference Line

Page-23
Design and Evaluation of
Millimeter-Wave MMICs

Page-24
 Capacitors

PHCAPN
1
Port1 2 2 1 Port2 1 2 2 1 PHCAPN
Port1 Port2
C=0.198pF Port1 Port2
ref ref ref ref
W=24um
L=25um
C=0.198pF
W=24um
L=25um

Pad Equivalent Capacitor

Measurement
Circuit
Page-25
 Capacitors
S11

Measurement

Simulation

Capacitor Photograph
PHCAPN
S21
Port1 Port2 Measurement
C=0.198pF
W=24um
L=25um Simulation
Measurement Data
Port3 1 2 Port1 Port2 2 1 Port4

ref ref

de-embedding Pad Data Measurement and

Simulation agree well.
Page-26
 FET

Vg Vd
100nH

100nH
0 0
L23

L24
A Port2

100pF

Port1 PH15HFET
N=6
100pF S Wu=40um

Measurement Data
Port3 1 2 1 2 2 1 Port4

ref ref ref

0 0 0 0

FET Photograph
de-embedding Pad Data

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 FET
S11 S12
Simulation
Measurement
Measurement
Simulation

S21 S22

Measurement Simulation

Measurement
Simulation

Page-28
 Open Stub

Port1 Port2

Open Stub Photograph

EM model

Simulation

Measurement

Measurement corresponds with Simulation.

Layout

Page-29
 Evaluation of
MMIC components

・Filter
・LNA
・PA
Tx ・Mixer
Rx
～ ～
～ ～
IF ～ ～
BPF PA RF RF BPF LNA Mixer IF
Mixer AMP

Lo Lo

Page-30
 ～
～
～
Filter
RF BPF LNA Mixer IF

Lo

Simulation

Simulation Measurement

Measurement
Simulation : -2.7dB@60GHz
Measurement : -2.0dB@60GHz

Page-31
Rx
～
LNA
～
～ Mixer
RF BPF LNA IF

Lo Four Stage LNA

Size 2.2mm×2.8mm
Vd = 2.5V Id = 130mA

LNA Photograph

Page-32
Rx
～
LNA
～
～ Mixer
RF BPF LNA IF

Lo
30
Gain
Measurement : 22.1dB@60GHz
25
G ain [dB ] / N oise Figure [dB ]
Simulation : 21.8dB@60GHz

20

15

Measurement : 3.9dB@60GHz
10 NF Simulation : 3.2dB@60GHz

0
55 57 59 61 63 65
F requency [G H z]

Measurement comparatively corresponds with Simulation.

Page-33
 ～
IF
～
～
RF
PA
Mixer AMP BPF PA

Lo
Three Stage PA
Size 2.2mm×2.8mm

Pad1
Pad1

2
Pad1

3
1
Vd = 2.5V Id = 85mA
2
3
1
1

1
3

3
2

2
1
3
2
2
3
1

2
3
1
2
3
1
1
3
2

1
3
2
1
3
2
2
3
1

3
2 1 P ort2
1 2
3

U MS P h15 V 20
3 3
1 2 2 1 2 1
3
S

2
1 2 1 3
3 4
3 S
P ort1 1 2 2 1
3
S
1
3
1

2
3
2
1
3
2

2
3
2

1
3
1
2
3
1

2
3
2

1
3
1
1
3
2

Pad1
Pad1
Pad1

PA Photograph

Page-34
 ～
IF
～
～
BPF PA RF
PA
Mixer AMP

Lo

Simulation

Measurement Measurement

Simulation

Simulation : 15.5dB@60GHz
Measurement : 15.0dB@60GHz

Measurement comparatively corresponds with Simulation.

Page-35
IF
～
～
～ PA
Mixe AMP BPF PA RF
r
Lo

Gain Simulation

Pout Simulation

Simulation P1dB 16.3dBm @Pin=1dBm

Page-36
 ～
～
～
Mixer
IF
Mixer AMP BPF PA RF

Lo Simulation
IF:1.0GHz
Measurement
Measurement

Simulation

Size 2.2mm×2.8mm Simulation

RF:60GHz
Lo:29.5GHz
Measurement
Mixer Photograph
Measurement corresponds relatively well with Simulation.
Page-37
 Circuit Design of
Transmitter and Receiver
High speed calculation is necessary to
analyze large scale integrated circuits!

V
V V
A A

A
A
A
A

A
Lo

P ad

IF
A

RF

Transmitter Tx Photograph

Page-38
 Simulated Transmitter Results

Conditions:
RF Frequency : 60GHz
Lo Frequency : 29.5GHz
IF Frequency : 1GHz
Power Sweep : -20dBm~0dBm
Harmonics :5

Nexxim is able to analyze large scale integrated circuits.

Page-39
 Summary

 Taiyo Yuden
• Material/Lamination Technologies
• Various products using these technologies
 Taiyo Yuden provides
• High Frequency Products, Technology and Services
 Millimeter-Wave MMIC
• UMS PH15 Design kit
• Ansoft Designer / Nexxim ver.3
• measurement corresponds well with simulation

Page-40
 Contact Us

 About This Presentation and Taiyo Yuden Products:

 Taiyo Yuden Web Site:
– http://www.yuden.co.jp/products/index.html

 About Ansoft Products and Technologies:

– Contact: Mark Viglione Ansoft Austin, Texas
– mviglione@ansoft.com

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