IKW75N60T

TRENCHSTOP™ Series q
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode

C
 Very low VCE(sat) 1.5V (typ.)
 Maximum Junction Temperature 175°C
 Short circuit withstand time 5s
 Positive temperature coefficient in VCE(sat) G
E
 very tight parameter distribution
 high ruggedness, temperature stable behaviour
 very high switching speed
 Low EMI
 Very soft, fast recovery anti-parallel Emitter Controlled HE diode
 Qualified according to JEDEC1) for target applications
 Pb-free lead plating; RoHS compliant PG-TO247-3

 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications:
 Frequency Converters
 Uninterrupted Power Supply

Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package

IKW75N60T 600V 75A 1.5V 175C K75T60 PG-TO247-3

Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage, Tj ≥ 25C VCE 600 V
2)
TC = 25C 80
DC collector current, limited by Tjmax IC
TC = 100C 75
Pulsed collector current, tp limited by Tjmax ICpul s 225
A
Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs - 225
2)
TC = 25C 80
Diode forward current, limited by Tjmax IF
TC = 100C 75
Diode pulsed current, tp limited by Tjmax IFpul s 225
Gate-emitter voltage VGE 20 V
3)
Short circuit withstand time
tSC 5 s
VGE = 15V, VCC  400V, Tj  150C
Power dissipation TC = 25C Ptot 428 W
Operating junction temperature Tj -40...+175
Storage temperature Tstg -55...+150 C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tsold 260

1)
J-STD-020 and JESD-022
2)
Value limited by bondwire
3)
Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPC TD VLS 1 Rev. 2.8 2013-12-05

 IKW75N60T
TRENCHSTOP™ Series q
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.35 K/W
junction – case
Diode thermal resistance, RthJCD 0.6
junction – case
Thermal resistance, RthJA 40
junction – ambient

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A 600 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15 V , I C = 75 A
T j =2 5 C - 1.5 2.0
T j =1 7 5 C - 1.9 -
Diode forward voltage VF V G E = 0V , I F = 7 5 A
T j =2 5 C - 1.65 2.0
T j =1 7 5 C - 1.6 -
Gate-emitter threshold voltage VGE(th) I C = 1. 2m A, V C E = V G E 4.1 4.9 5.7
Zero gate voltage collector current ICES V C E = 60 0 V , µA
V G E = 0V
T j =2 5 C - - 40
T j =1 7 5 C - - 5000
Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA
Transconductance gfs V C E = 20 V , I C = 75 A - 41 - S
Integrated gate resistor RGint - Ω

Dynamic Characteristic
Input capacitance Ciss V C E = 25 V , - 4620 - pF
Output capacitance Coss V G E = 0V , - 288 -
Reverse transfer capacitance Crss f= 1 MH z - 137 -
Gate charge QGate V C C = 48 0 V, I C =7 5 A - 470 - nC
V G E = 15 V
Internal emitter inductance LE - 13 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current IC(SC) V G E = 15 V ,t S C  5 s - 690 - A
Allowed number of short circuits: <1000; time V C C = 4 0 0 V,
between short circuits: >1s. T j  150C

IFAG IPC TD VLS 2 Rev. 2.8 2013-12-05

 IKW75N60T
TRENCHSTOP™ Series q
Switching Characteristic, Inductive Load, at Tj=25 C
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j=25 C, - 33 - ns
VCC=400V,IC=75A,
Rise time tr VGE=0/15V, - 36 -
Turn-off delay time td(off) rG=5 , L =100nH, - 330 -
C=39pF
Fall time tf - 35 -
L , C f rom Fig. E
Turn-on energy Eon Energy losses include - 2.0 - mJ
Turn-off energy Eoff “tail” and diode reverse - 2.5 -
recovery.
Total switching energy Ets - 4.5 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j =2 5 C , - 121 - ns
Diode reverse recovery charge Qrr V R = 4 00 V , I F = 7 5 A, - 2.4 - µC
Diode peak reverse recovery current Irrm d i F / d t =1 4 60 A / s - 38.5 - A
Diode peak rate of fall of reverse d i r r /d t - 921 - A/s
recovery current during t b

Switching Characteristic, Inductive Load, at Tj=175 C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j=175 C, - 32 - ns
VCC=400V,IC=75A,
Rise time tr VGE=0/15V, - 37 -
Turn-off delay time td(off) rG=5 , L =100nH, - 363 -
C=39pF
Fall time tf - 38 -
L , C f rom Fig. E
Turn-on energy Eon Energy losses include - 2.9 - mJ
Turn-off energy Eoff “tail” and diode reverse - 2.9 -
recovery.
Total switching energy Ets - 5.8 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j =1 7 5 C - 182 - ns
Diode reverse recovery charge Qrr V R = 4 00 V , I F = 7 5 A, - 5.8 - µC
Diode peak reverse recovery current Irrm d i F / d t =1 4 60 A / s - 56.2 - A
Diode peak rate of fall of reverse d i r r /d t - 1013 - A/s
recovery current during t b

IFAG IPC TD VLS 3 Rev. 2.8 2013-12-05

 IKW75N60T
TRENCHSTOP™ Series q

200A
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

150A

T C =80°C

100A
T C =110°C

Ic
50A

Ic
0A
10H z 100H z 1kH z 10kH z 100kH z

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25C, Tj 175C;
(Tj  175C, D = 0.5, VCE = 400V, VGE=0/15V)
VGE = 0/15V, rG = 5)

400W

120A
350W
Ptot, POWER DISSIPATION

IC, COLLECTOR CURRENT

300W
90A
250W

200W
60A
150W

100W 30A

50W

0W
0A
25°C 50°C 75°C 100°C 125°C 150°C 25°C 75°C 125°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of Figure 4. DC Collector current as a function
case temperature of case temperature
(Tj  175C) (VGE  15V, Tj  175C)

IFAG IPC TD VLS 4 Rev. 2.8 2013-12-05

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TRENCHSTOP™ Series q

120A 120A
V GE =20V V G E =20V
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

15V 15V
90A 13V 90A 13V
11V 11V
9V 9V
60A 60A
7V 7V

30A 30A

0A 0A
0V 1V 2V 3V 0V 1V 2V 3V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj = 25°C) (Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

2.5V IC =150A
80A
IC, COLLECTOR CURRENT

2.0V
60A
IC =75A
1.5V

40A
1.0V IC =37.5A

T J = 1 7 5 °C
20A
2 5 °C 0.5V

0A 0.0V
0V 2V 4V 6V 8V 0°C 50°C 100°C 150°C

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter
(VCE=20V) saturation voltage as a function of
junction temperature
(VGE = 15V)

IFAG IPC TD VLS 5 Rev. 2.8 2013-12-05

 IKW75N60T
TRENCHSTOP™ Series q

t d(off)

t d(off)
t, SWITCHING TIMES

t, SWITCHING TIMES
100ns
100n s
tf
tf tr

t d(on)
t d(on)

tr
10ns 10 ns
0A 40A 80A 120A   

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, TJ=175°C, (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, rG = 5Ω, VCE= 400V, VGE = 0/15V, IC = 75A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

7V

t d(off) 6V
VGE(th), GATE-EMITT TRSHOLD VOLTAGE

m ax.
typ.
5V
t, SWITCHING TIMES

4V m in.
100ns

3V

tf 2V
tr

1V
t d(on)

0V
25°C 50°C 75°C 100°C 125°C 15 0°C -50°C 0°C 50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage as
function of junction temperature a function of junction temperature
(inductive load, VCE = 400V, (IC = 1.2mA)
VGE = 0/15V, IC = 75A, rG=5Ω,
Dynamic test circuit in Figure E)

IFAG IPC TD VLS 6 Rev. 2.8 2013-12-05

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TRENCHSTOP™ Series q
*) Eon and Ets include losses *) E on a nd E ts in clu d e lo ss e s
Ets*
due to diode recovery d u e to d io d e rec o v e ry
8 .0m J E ts *
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

12.0mJ

6 .0m J
Eon*

8.0mJ

4 .0m J
Eoff E on *

4.0mJ
2 .0m J
E off

0.0mJ 0 .0m J
0A 20A 40A 60A 80A 100A 120A 140A    

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, TJ = 175°C, (inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, rG = 5Ω, VCE = 400V, VGE = 0/15V, IC = 75A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

*) Eon and Ets include losses *) E on and E ts include losses

due to diode recovery
Ets* due to diode recovery
5.0mJ 8m J
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

4.0mJ
6m J E on *

E ts *
3.0mJ Eoff
4m J
2.0mJ E off
Eon*
2m J
1.0mJ

0.0mJ 0m J
25°C 50°C 75°C 100°C 125°C 150°C 300V 350V 400V 450V 500V 550V
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses Figure 16. Typical switching energy losses
as a function of junction as a function of collector emitter
temperature voltage
(inductive load, VCE = 400V, (inductive load, TJ = 175°C,
VGE = 0/15V, IC = 75A, rG = 5Ω, VGE = 0/15V, IC = 75A, rG = 5Ω,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

IFAG IPC TD VLS 7 Rev. 2.8 2013-12-05

 IKW75N60T
TRENCHSTOP™ Series q

C iss
VGE, GATE-EMITTER VOLTAGE

15V
1nF

c, CAPACITANCE
120V
10V 480V

C oss

5V
C rss
100pF

0V 0V 10V 20V
0nC 100nC 200nC 300nC 400nC

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge Figure 18. Typical capacitance as a function
(IC=75 A) of collector-emitter voltage
(VGE=0V, f = 1 MHz)

12µs
IC(sc), short circuit COLLECTOR CURRENT

tSC, SHORT CIRCUIT WITHSTAND TIME

1000 10µs

8µs
750

6µs
500

4µs

250
2µs

0
0µs
12 13 14 15 16 17 18 19 20 10V 11V 12V 13V 14V

VGE, GATE-EMITTER VOLTAGE VGE, GATE- EMITTER VOLTAGE

Figure 19. Typical short circuit collector Figure 20. Short circuit withstand time as a
current as a function of gate- function of gate-emitter voltage
emitter voltage (VCE=400V, start at TJ=25°C,
(VCE  400V, Tj  150C) TJmax<150°C)

IFAG IPC TD VLS 8 Rev. 2.8 2013-12-05

 IKW75N60T
TRENCHSTOP™ Series q

D=0.5 D=0.5
ZthJC, TRANSIENT THERMAL IMPEDANCE

ZthJC, TRANSIENT THERMAL IMPEDANCE

-1
10 K/W 0.2 0.2
-1
10 K/W
0.1 0.1
R,(K/W) , (s)
0.05
R,(K/W) , (s) 0.1846 0.110373
0.1968 0.115504 0.05
0.1681 0.015543
0.0733 0.009340 0.1261 0.001239
0.02
-2 0.0509 0.000823 0.0818 0.000120
10 K/W 0.02 0.0290 0.000119
0.01 0.04 0.000008
0.01 R 1 R2 R1 R2
-2
10 K/W

C 1 =  1 /R 1 C 2 =  2 /R 2
C 1 =  1 /R 1 C 2 =  2 /R 2
single pulse
single pulse
-3
10 K/W
1µs 10µs 100µs 1ms 10ms 100ms 100ns 1µs 10µs 100µs 1ms 10ms100ms
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 21. IGBT transient thermal Figure 22. Diode transient thermal
impedance impedance as a function of pulse
(D = tp / T) width
(D=tP/T)

5µC
200ns T J=175°C
TJ=175°C
Qrr, REVERSE RECOVERY CHARGE
trr, REVERSE RECOVERY TIME

4µC
150ns

3µC

100ns
TJ=25°C 2µC
T J=25°C
50ns 1µC

0µC
0ns 1000A/µs 1500A/µs
1000A/µs 1500A/µs
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as Figure 24. Typical reverse recovery charge
a function of diode current slope as a function of diode current
(VR=400V, IF=75A, slope
Dynamic test circuit in Figure E) (VR = 400V, IF =75A,
Dynamic test circuit in Figure E)

IFAG IPC TD VLS 9 Rev. 2.8 2013-12-05

 IKW75N60T
TRENCHSTOP™ Series q

T J =175°C -1200A/µs T J=175°C

60A
Irr, REVERSE RECOVERY CURRENT

OF REVERSE RECOVERY CURRENT

dirr/dt, DIODE PEAK RATE OF FALL
-1000A/µs
50A T J=25°C

-800A/µs
40A
T J =25°C
-600A/µs
30A

-400A/µs
20A

-200A/µs
10A

0A 0A/µs
1000A/µs 1500A/µs
1000A/µs 1500A/µs

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current Figure 26. Typical diode peak rate of fall of
as a function of diode current reverse recovery current as a
slope function of diode current slope
(VR = 400V, IF = 75A, (VR=400V, IF=75A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

200A
T J =25°C I F =150A
2.0V
175°C
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT

150A
1.5V 75A

37.5A
100A
1.0V

50A 0.5V

0A 0.0V
0V 1V 2V
0°C 50°C 100°C 150°C

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 27. Typical diode forward current as Figure 28. Typical diode forward voltage as a
a function of forward voltage function of junction temperature

IFAG IPC TD VLS 10 Rev. 2.8 2013-12-05

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TRENCHSTOP™ Series q

IFAG IPC TD VLS 11 Rev. 2.8 2013-12-05

 IKW75N60T
TRENCHSTOP™ Series q
i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS 10% Ir r m t
QF
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

1 2 n
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses

IFAG IPC TD VLS 12 Rev. 2.8 2013-12-05

 IKW75N60T
TRENCHSTOP™ Series q
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.

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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.

IFAG IPC TD VLS 13 Rev. 2.8 2013-12-05