PD- 5.

042

PRELIMINARY CPV364M4K
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
Features
1

• Short Circuit Rated UltraFast: Optimized for high

operating frequencies >5.0 kHz , and Short Circuit Q1
D1
Q3
D3
Q5
D5
3 9 15
Rated to 10µs @ 125°C, VGE = 15V
4 10 16
• Fully isolated printed circuit board mount package
D2 D4 D6
• Switching-loss rating includes all "tail" losses 6
Q2
12
Q4
18
Q6
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
7 13 19
See Fig. 1 for Current vs. Frequency curve
Product Summary
Output Current in a Typical 20 kHz Motor Drive
11 ARMS per phase (3.1 kW total) with TC = 90°C, T J = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium. IMS-2
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 24
IC @ TC = 100°C Continuous Collector Current 13 A
ICM Pulsed Collector Current  48
ILM Clamped Inductive Load Current ‚ 48
tsc Short Circuit Withstand Time 9.3 µs
VGE Gate-to-Emitter Voltage ±20 V
VISOL Isolation Voltage, any terminal to case, 1 min 2500 VRMS
PD @ TC = 25°C Maximum Power Dissipation, each IGBT 63 W
PD @ TC = 100°C Maximum Power Dissipation, each IGBT 25
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 5-7 lbf•in ( 0.55-0.8 N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction ––– 2.0
RθJC (DIODE) Junction-to-Case, each diode, one diode in conduction ––– 3.0 °C/W
RθCS (MODULE) Case-to-Sink, flat, greased surface 0.10 –––
Wt Weight of module 20 (0.7) ––– g (oz)

7/18/97
CPV364M4K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 ––– ––– V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.63 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage ––– 1.80 2.3 IC = 13A VGE = 15V
––– 1.80 ––– V IC = 24A See Fig. 2, 5
––– 1.56 ––– IC = 13A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 ––– 6.0 VCE = VGE , IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -13 ––– mV/°C VCE = VGE , IC = 250µA
gfe Forward Transconductance „ 11 18 ––– S VCE = 100V, IC = 10A
ICES Zero Gate Voltage Collector Current ––– ––– 250 µA VGE = 0V, VCE = 600V
––– ––– 3500 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop ––– 1.3 1.7 V IC = 15A See Fig. 13
––– 1.2 1.6 IC = 15A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 110 170 IC = 13A
Q ge Gate - Emitter Charge (turn-on) — 14 21 nC VCC = 400V See Fig.8
Q gc Gate - Collector Charge (turn-on) — 49 74 VGE = 15V
t d(on) Turn-On Delay Time — 50 —
tr Rise Time — 30 — TJ = 25°C
ns
t d(off) Turn-Off Delay Time — 110 170 IC = 13A, VCC = 480V
tf Fall Time — 91 140 VGE = 15V, RG = 10Ω
Eon Turn-On Switching Loss — 0.56 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 0.28 — mJ and diode reverse recovery
Ets Total Switching Loss — 0.84 1.1 See Fig. 9,10, 18
t sc Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10Ω , VCPK < 500V
t d(on) Turn-On Delay Time — 47 — TJ = 150°C, See Fig. 11,18
tr Rise Time — 30 — IC = 13A, VCC = 480V
ns
t d(off) Turn-Off Delay Time — 250 — VGE = 15V, RG = 10Ω
tf Fall Time — 150 — Energy losses include "tail"
Ets Total Switching Loss — 1.28 — mJ and diode reverse recovery
LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Cies Input Capacitance — 1600 — VGE = 0V
Coes Output Capacitance — 130 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 55 — ƒ = 1.0MHz
t rr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig.
— 74 120 TJ = 125°C 14 IF = 15A
I rr Diode Peak Reverse Recovery Current — 4.0 6.0 A TJ = 25°C See Fig.
— 6.5 10 TJ = 125°C 15 VR = 200V
Q rr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig.
— 220 600 TJ = 125°C 16 di/dt = 200Aµs
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 188 — A/µs TJ = 25°C See Fig.
During t b — 160 — TJ = 125°C 17
 CPV364M4K
18 5.27

T c = 9 0° C
16 4.68
T j = 1 25 ° C

Total Output Power (kW)

P ow er F ac tor = 0 .8
14 M o d ula tio n D ep th = 1 .15 4.10
V c c = 50 % o f R a ted V o lta g e
LOAD CURRENT (A)

12 3.51

10 2.93

8 2.34

6 1.76

4 1.17

2 0.59

0 0.00
0.1 1 10 100
f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100 100
I C, Collector-to-Emitter Current (A)

I C, Collector-to-Emitter Current (A)

TJ = 150 °C
TJ = 150 °C

10 10
TJ = 25 °C

TJ = 25 °C

V GE = 15V VCC = 50V

20µs PULSE WIDTH 5µs PULSE WIDTH
1 1
1 10 5 6 7 8 9 10
V CE, Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

CPV364M4K
25 4.0
V GE = 1 5 V VGE = 15V
M a xim um D C C ollecto r C urre nt (A )

80 us PULSE WIDTH

VCE, Collector-to-Emitter Voltage(V)

20

3.0 I C = 26A
15

10

2.0
I C = 13A

5
I C = 6.5A

0 A 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , C ase Te m peratu re (°C ) TJ , Junction Temperature ( °C)

Fig. 4 - Maximum Collector Current vs. Fig. 5 - Typical Collector-to-Emitter Voltage

Case Temperature vs. Junction Temperature

10
T herm al R espon se (Z thJC )

1 D = 0.50

0.20

0.10
PD M
0.05
0 .1
t
0.02 1
0.01
t2
S INGLE PULSE
Notes :
( TH ERMA L RES PO NSE ) 1. D uty fac tor D = t / t
1 2
2. P ea k TJ = P D M x Z thJ C + T C
0.01
0.0000 1 0.0001 0.001 0 .01 0 .1 1 10
t 1 , R e ct an gu la r P uls e D ura tio n (se c )

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

 CPV364M4K
3000 20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 13A
Cres = Cgc

V GE, Gate-to-Emitter Voltage (V)

2500 Coes = Cce + Cgc 16
C, Capacitance (pF)

2000
12
Cies
1500

8
1000

4
500
Coes
Cres
0 0
1 10 100 0 20 40 60 80 100 120
VCE , Collector-to-Emitter Voltage (V) Q G, Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

1.5 10
VCC = 480V 10Ω
RG = Ohm
VGE = 15V VGE = 15V
TJ = 25 °C VCC = 480V
I C = 13A
IC = 26A
Total Switching Losses (mJ)

Total Switching Losses (mJ)

IC = 13A
1.0 1

IC = 6.5A

0.5 0.1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
RGR,GGate Resistance
, Gate (Ω)
Resistance(Ohm) T J, Junction Temperature ( °C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
 CPV364M4K
4.0 1000
RG 10Ω
= Ohm V GE = 2 0 V
TJ = 150 ° C TJ = 125°C

I C , C olle ctor-to-E m itter C u rrent (A )

VCC = 480V
VGE = 15V
Total Switching Losses (mJ)

3.0

100

2.0
S AF E O P ER AT IN G AR EA

10
1.0

0.0 1 A
0 5 10 15 20 25 30
1 10 100 1000
I C , Collector-to-emitter Current (A)
VC E , C ollector-to -E m itter V oltage (V )

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
100
Inst antan eous F orw ard C urrent - I F (A )

10

TJ = 15 0°C

TJ = 12 5°C

TJ = 2 5°C

1
0.8 1.2 1.6 2.0 2.4
F orwa rd V olta ge D rop - V FM (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
 CPV364M4K
100 100

V R= 200V VR = 2 0 0 V
T J = 125°C T J = 1 2 5 °C
T J = 25°C TJ = 2 5 ° C

80

I F = 30A

I IR R M - (A )
I F = 30A
t rr - (ns)

IF = 15 A
60 10
I F = 15A

I F = 5 .0A
40

I F = 5.0A

20 1
100 1000 100 1000
di f/dt - (A/µs) di f /dt - (A / µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

800 1000
VR = 2 0 0 V
VR = 2 0 0 V
T J = 1 2 5 °C T J = 1 2 5 °C
TJ = 2 5 ° C TJ = 2 5 ° C

600
di(re c)M /dt - (A / µs)

I F = 3 0A
Q R R - (nC )

I F = 5 .0 A
400
I F = 15A I F = 1 5A

IF = 5.0A I F = 3 0A

200

0 100
100 1000 100 1000
di f /d t - (A /µs ) d i f /dt - (A /µs)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M /dt vs. dif /dt
CPV364M4K

90% Vge
+ Vg e

Same t ype
device as V ce
D.U.T.

90% Ic
10 % Vc e
Ic Ic
430µF 5% Ic
80%
of Vce D.U.T.
td (off) tf

∫
t1 +5µ S
E off = V ce ic d t
t1

Fig. 18a - Test Circuit for Measurement of

ILM, Eon , Eoff(diode), t rr, Qrr, Irr, t d(on), t r, t d(off), t f
t1 t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

∫
trr
G ATE VO LTA G E D .U .T. trr
Q rr = id dt
Ic
tx
1 0% +V g
+V g
tx
10 % Ir r
10% V cc
V cc
DUT V O LTA G E
V ce AN D C URR E NT V pk
Irr
10% Ic
Vcc Ipk
9 0% Ic
Ic
DIO DE RE CO V E RY
W AV E FO RM S
5% Vc e
td( on) tr

∫
t2

∫
E on = V c e ie dt t4
t1 Er ec = V d id d t
t3
t1 t2 DIO D E RE V E RS E
RE C O V ER Y EN ER G Y

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon , td(on), tr Defining Erec, trr, Q rr, Irr
 CPV364M4K

V g G ATE S IG N AL
DE VICE UNDE R TE S T

CURR EN T D .U .T.

VO L TA G E IN D.U.T.

CURR EN T IN D1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 480V
RL =
4 X I C @25°C
10 00V V c*
0 - 480V
50V
60 00µ F
100 V

Figure 19. Clamped Inductive Load Test Figure 20. Pulsed Collector Current
Circuit Test Circuit
CPV364M4K
Notes:
 Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
‚ VCC=80%(VCES), VGE=20V, L=10µH, RG = 10Ω (Figure 19)
ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
„ Pulse width 5.0µs, single shot.

Case Outline — IMS-2

62.43 (2.458) 7.87 (.310)

3.91 ( .154)
2X 53.85 ( 2.120) 5.46 ( .215)

NO TE S:
1. Tolerance unless otherwis e
spec ified ± 0.254 (.010) .
21.97 (.865) 2. Controlling D imension: Inch.
3. Dimens ions ar e shown in
Millimeter ( Inc hes) .
4. Term inal numbers are shown
1 2 3 4 5 6 7 8 9 10 1 1 1 2 13 14 1 5 1 6 17 18 19 0.38 (.015)
for refer enc e only.

3.94 (.155)
1.27 ( .050)

3.05 ± 0.38
4.06 ± 0.51 1.27 (.050) (.120 ± .015)
(.160 ± .020) 13X
2.54 (.100) 0.76 (.030) 0.51 (.020)
5.08 (.200) 6X 13X
6.10 (.240)
6X

IMS-2 Package Outline (13 Pins)

D im e n s io n s in M illim e te rs a n d (In c h e s)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 7/97
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