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SKM 75GB063D

Absolute Maximum Ratings  8 19 :) 


 
 

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Symbol Conditions Values Units
IGBT
()' ; 8 19 :) =00 (
) ; 8 /90 :) 
8 19 :) /00 -

8 >9 :) >9 -
)?@ )?@81A)  /90 -
(' B 10 (
 ()) 8 C00 (D (' E 10 (D ; 8 /19 :) /0 G
()' F =00 (
SEMITRANS® 2
Inverse Diode
* ; 8 /90 :) 
8 19 :) >9 -
Superfast NPT-IGBT 
8 H0 :) 90 -
Modules *?@ *?@81A*  /90 -
*@  8 /0 D  & ; 8 /90 :) II0 -
SKM 75GB063D
Freewheeling Diode
SKM 75GAR063D * ; 8 /90 :)  8 19 :) /00 -

SKM 75GAL063D  8 H0 :) >9 -


*?@ *?@81A*  100 -
*@  8 /0 D  ; 8 /90 :) >10 -
Module
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Typical Applications* ; 8 /19:)
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GB GAL GAR

1 18-06-2007 SCT © by SEMIKRON


SKM 75GB063D
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
(* 8 (') *  8 >9 -D (' 8 0 ( ; 8 19 :)
,& / 99 / Q (
; 8 /19 :)
,& / 99 (
(*0 ; 8 /19 :) 0 Q (
* ; 8 /19 :) /0 /C C K
??@ * 8 >9 - ; 8 /19 :) C0 -
L !3! 8 H00 -3G C > G)
' (' 8 /9 (D ()) 8 C00 ( N
SEMITRANS® 2 ?;. 
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0 >1 O3P
Freewheeling Diode
Superfast NPT-IGBT (* 8 (') *  8 /00 -D (' 8 0 ( ; 8 19 :)
,& / 99 / Q (
; 8 /19 :)
,& / 99 (
Modules
(*0 ; 8 /19 :) 0 Q (

SKM 75GB063D * ; 8 /19 :) H /0 (

SKM 75GAR063D ??@ * 8 /00 - ; 8 /19 :) II -


L !3! 8 0 -3G = G)
SKM 75GAL063D ' (' 8 /9 (D ()) 8 C00 ( N
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Module
Features )' C0 "
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8 19 :) 0 >9 K
  
  



 
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 This is an electrostatic discharge sensitive device (ESDS), international standard
  
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  IEC 60747-1, Chapter IX.
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 $   !   ! * The specifications of our components may not be considered as an assurance of
 

 
/0   ! component characteristics. Components have to be tested for the respective



! 
 10  application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
Typical Applications* approval by SEMIKRON. We therefore strongly recommend prior consultation of
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GB GAL GAR

2 18-06-2007 SCT © by SEMIKRON


SKM 75GB063D
Zth
Symbol Conditions Values Units
Zth(j-c)l
? 8/ 190 63P
? 81 >0 63P
? 8C 19 63P
? 8I 9 63P
 8/ 0 0H>I 
 81 0 00>H 
 8C 0 00/> 
 8I 0 000/ 
®
SEMITRANS 2 Zth(j-c)D
? 8/ 990 63P
? 81 CI0 63P
Superfast NPT-IGBT ? 8C Q1 63P
Modules ? 8I /H 63P
 8/ 0 0>=/ 
 81 0 00I9 
SKM 75GB063D  8C 0 0// 
SKM 75GAR063D  8I 0 0001 

SKM 75GAL063D

Features
  
  




   
   
 



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GB GAL GAR

3 18-06-2007 SCT © by SEMIKRON


SKM 75GB063D

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC)

Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)

Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic

4 18-06-2007 SCT © by SEMIKRON


SKM 75GB063D

Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG

Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic, inclusive RCC'+ EE'

Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge

5 18-06-2007 SCT © by SEMIKRON


SKM 75GB063D
UL recognized File no. E 63 532

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. =1 S . =/ -? )
. =C S . =/

6 18-06-2007 SCT © by SEMIKRON

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