AO9926B

20V Dual N-Channel MOSFET

General Description Product Summary

The AO9926B uses advanced trench technology to VDS 20V

provide excellent RDS(ON), low gate charge and operation ID (at VGS=10V) 7.6A
with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS=10V) < 23mΩ
VGS(MAX) rating. This device is suitable for use as a uni-
RDS(ON) (at VGS =4.5V) < 26mΩ
directional or bi-directional load switch.
RDS(ON) (at VGS=2.5V) < 34mΩ
RDS(ON) (at VGS=1.8V) < 52mΩ

SOIC-8
D1 D2
Top View Bottom View
Top View

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1 G1 G2

S1 S2
Pin1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TA=25°C 7.6
ID
Current TA=70°C 6.1 A
Pulsed Drain Current C IDM 38
TA=25°C 2
PD W
Power Dissipation B TA=70°C 1.28
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 74 90 °C/W
Maximum Junction-to-Lead Steady-State RθJL 32 40 °C/W

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 AO9926B

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 20 V
VDS=20V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 0.75 1.1 V
ID(ON) On state drain current VGS=10V, VDS=5V 38 A
VGS=10V, ID=7.6A 16.5 23
mΩ
TJ=125°C 25 30
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=7A 18.5 26 mΩ
VGS=2.5V, ID=6A 24 34 mΩ
VGS=1.8V, ID=2A 32 52 mΩ
gFS Forward Transconductance VDS=5V, ID=7.6A 25 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 420 525 630 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 65 95 125 pF
Crss Reverse Transfer Capacitance 45 75 105 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.8 1.7 2.6 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 12.5 nC
Qg(4.5V) Total Gate Charge 6 nC
VGS=10V, VDS=15V, ID=7.6A
Qgs Gate Source Charge 1 nC
Qgd Gate Drain Charge 2 nC
tD(on) Turn-On DelayTime 3 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.3Ω, 7.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 20 ns
tf Turn-Off Fall Time 6 ns
trr Body Diode Reverse Recovery Time IF=7.6A, dI/dt=100A/µs 14 ns
Qrr Body Diode Reverse Recovery Charge IF=7.6A, dI/dt=100A/µs 6 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AO9926B

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40 20
10V 3.5V VDS=5V

30 4.5V 2.5V 15
ID (A)

ID(A)
20 10

1.8V 125°C
10 5 25°C
VGS=3.5V

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

60 1.8
55 VGS=4.5V
Normalized On-Resistance
50 1.6 ID=6A
45 VGS=2.5V
ID=7A
RDS(ON) (mΩ )

40 1.4
VGS=1.8V 17
35 VGS=1.8V
5
30 VGS=2.5V 1.2 ID=2A
2
25 10
VGS=4.5V VGS=10V
20 1
ID=7.6A
15
VGS=10V
10 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and
Figure 4: On-Resistance vs. Junction Temperature
18
Gate Voltage (Note E)
(Note E)

45 1.0E+02
ID=7.6A
40 1.0E+01
40
1.0E+00
35
RDS(ON) (mΩ )

1.0E-01 125°C
IS (A)

30 125°C
1.0E-02 25°C
25
1.0E-03

20 25°C 1.0E-04

15 1.0E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO9926B

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1000
VDS=10V
ID=7.6A
8 800
Ciss

Capacitance (pF)
VGS (Volts)

6 600

4 400
Coss

2 200

Crss
0 0
0 5 10 15 0 5 10 15 20
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 10000
TA=25°C

RDS(ON) 10µs
10.0 1000
limited
100µs
ID (Amps)

Power (W)

1.0 1ms
100
TJ(Max)=150°C 10ms
TA=25°C
0.1 10s 10
DC

0.0 1
0.01 0.1 1 10 100 0.00001 0.001 0.1 10 1000
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Ambient (Note F)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=90°C/W

0.1

0.01
Single Pulse

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 3: July 2010 www.aosmd.com Page 4 of 5

 AO9926B

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge

R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s

RL
V ds
Vds

90 %
DUT
+ Vdd
Vgs VDC

Rg - 1 0%

Vgs V gs t d (o n ) tr t d (o ff) tf

to n t o ff

D iode R ecovery T est C ircuit & W aveform s

V ds + Q rr = - Idt
DUT
V gs

t rr
V ds - L Isd IF
Isd dI/dt
+ V dd
I RM
V gs VD C
V dd
Ig
- V ds

Rev 3: July 2010 www.aosmd.com Page 5 of 5