PD 91468C

IRG4PC50F
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT

Features C

• Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20 VCES = 600V
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
G VCE(on) typ. = 1.45V
parameter distribution and higher efficiency than
Generation 3
E @VGE = 15V, IC = 39A
• Industry standard TO-247AC package
n-channel

Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's

TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 70
IC @ TC = 100°C Continuous Collector Current 39 A
ICM Pulsed Collector Current Q 280
ILM Clamped Inductive Load Current R 280
VGE Gate-to-Emitter Voltage ± 20 V
EARV Reverse Voltage Avalanche Energy S 20 mJ
PD @ TC = 25°C Maximum Power Dissipation 200
W
PD @ TC = 100°C Maximum Power Dissipation 78
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.64
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount ––– 40
Wt Weight 6 (0.21) ––– g (oz)

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IRG4PC50F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
V(BR)ECS Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.62 — V/°C VGE = 0V, IC = 1.0mA
— 1.45 1.6 IC = 39A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage — 1.79 — IC = 70A See Fig.2, 5
V
— 1.53 — IC = 39A , TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance U 21 30 — S VCE = 100V, IC = 39A
— — 250 VGE = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current µA
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
— — 2000 VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 190 290 IC = 39A
Qge Gate - Emitter Charge (turn-on) — 28 42 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) — 65 97 VGE = 15V
td(on) Turn-On Delay Time — 31 —
tr Rise Time — 25 — TJ = 25°C
ns
td(off) Turn-Off Delay Time — 240 350 IC = 39A, VCC = 480V
tf Fall Time — 130 190 VGE = 15V, RG = 5.0Ω
Eon Turn-On Switching Loss — 0.37 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 2.1 — mJ See Fig. 10, 11, 13, 14
Ets Total Switching Loss — 2.47 3.0
td(on) Turn-On Delay Time — 28 — TJ = 150°C,
tr Rise Time — 24 — IC = 39A, VCC = 480V
ns
td(off) Turn-Off Delay Time — 390 — VGE = 15V, RG = 5.0Ω
tf Fall Time — 230 — Energy losses include "tail"
Ets Total Switching Loss — 5.0 — mJ See Fig. 13, 14
LE Internal Emitter Inductance — 13 — nH Measured 5mm from package
Cies Input Capacitance — 4100 — VGE = 0V
Coes Output Capacitance — 250 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 49 — ƒ = 1.0MHz
Notes:

Q Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
(See fig. 13a) U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.

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 IRG4PC50F

100

F or b oth: T ria n g u la r w a v e :
D u ty c y c le : 5 0 %
80 TJ = 1 2 5 °C
T s in k = 9 0 °C
G a te d riv e a s s p e c ifie d
L oa d C u rre n t (A )

P ow er D is sip atio n = 4 0 W C lam p v o lta ge :

8 0% o f rate d
60
S q u a re w a ve :
6 0% o f ra te d
v olta ge
40

20 Id e a l dio d e s

0 A
0.1 1 10 100

f, F re q u e nc y (k H z )

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)

1000 1000
I C , C o lle ctor-to-E m itter Cu rre n t (A )

I C , C ollec to r-to -Em itter C urre n t (A)

100 100
T J = 1 50 °C

TJ = 2 5°C

T J = 1 5 0 °C
10 10
T J = 2 5 °C

VG E = 1 5 V V CC = 5 0 V
2 0 µ s P U L S E W ID T H A 5µ s P U L S E W ID TH A
1 1
0.1 1 10 5 6 7 8 9 10 11 12
VC E , C o lle c to r-to -E m itte r V o lta g e (V ) VG E , G a te -to -E m itte r V o lta g e (V )

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4PC50F

70
V G E = 15 V 2.5
V G E = 1 5V

V CE , C olle ctor-to-E m itte r V oltage (V)

8 0 µs P U L S E W ID TH
60
M aximum D C Collector Current (A )

50 I C = 78 A
2.0

40

30
I C = 39 A
1.5
20

10 I C = 20A

0 A
1.0
25 50 75 100 125 150
-60 -40 -20 0 20 40 60 80 100 120 140 160
T C , C ase Tem perature (°C) T J , Ju n c tio n Te m p e ra tu re (°C )

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Collector-to-Emitter Voltage vs.
Temperature Junction Temperature

1
Therm al Re spo nse (Z thJC )

D = 0 .5 0

0 .2 0
0 .1
0 .1 0
PDM

0 .0 5 t
1
t2
0 .0 2 S IN G L E P U L S E
N o te s :
(T H E R M A L R E S P O N S E )
0 .0 1 1 . D u ty fa c to r D = t / t2
1
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 1
0 .0 0 0 0 1 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10
t 1 , R ectangu lar Pulse Du ration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRG4PC50F

8000 20
VGE = 0V f = 1 MHz V CE = 4 0 0 V
Cies = Cge + Cgc + Cce SHORTED IC = 39A

V G E , G a te -to -E m itte r V oltage (V )

Cres = Cce
Coes = Cce + Cgc
16
C, Capacitance (pF)

6000

C ies
12

4000

8
C oes

2000
Cres 4

0
A A
0
1 10 100 0 40 80 120 160 200
V C E , Collector-to-Emitter Voltage (V) Q g , To ta l G a te C h a rg e (n C )

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

3.8 100
VC C = 480V R G = 5.0 Ω
VG E = 15V V G E = 15V
3.6 TJ = 25°C V C C = 480V
Total Switching Losses (mJ)

Total Switching Losses (mJ)

IC = 39A
3.4
10
I C = 78A
3.2

IC = 39A
3.0
I C = 20A
1
2.8

2.6

2.4 A A
0.1
0 10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160
R G , Gate Resistance (Ω) TJ , Junction Temperature (°C)

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature

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IRG4PC50F
12 1000
RG = 5.0 Ω VGGE E= 2 0V

I C , C ollector-to-E mitte r C urren t (A)

TJ = 150°C T J = 12 5 °C
10
V CC = 480V
Total Switching Losses (mJ)

V GE = 15V
S A FE O P E R A TIN G A R E A
8 100

4 10

0 A 1
0 20 40 60 80 1 10 100 1000

I C , Collector-to-Emitter Current (A) V C E , Collecto r-to-E m itter V oltage (V )

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current

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 IRG4PC50F

L D .U .T.
VC * 480V
RL =
4 X IC@25°C
50V 0 - 480V
1 00 0V 480µF
960V
Q
R

* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )

* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.

Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector

Load Test Circuit Current Test Circuit

IC
L
D river* D .U .T. Fig. 14a - Switching Loss
VC Test Circuit
50V
1000V
* Driver same type
Q as D.U.T., VC = 480V
R S

9 0%

S 1 0%

VC
90 %
t d (o ff)
Fig. 14b - Switching Loss
Waveforms

10 %
IC 5%
tr tf
t d (o n ) t=5µ s
E on E o ff
E ts = ( Eo n +E o ff )

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IRG4PC50F

Case Outline and Dimensions — TO-247AC

N O TE S :
3 .6 5 (.1 4 3 ) -D-
5 .3 0 ( .2 0 9 ) 1 D IM E N S IO N S & T O L E R A N C IN G
1 5 .9 0 (.6 2 6 ) 3 .5 5 (.1 4 0 ) P E R A N S I Y 14 .5 M , 1 9 8 2 .
1 5 .3 0 (.6 0 2 ) 4 .7 0 ( .1 8 5 )
0 .2 5 (.0 1 0 ) M D B M 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
-B- -A- 2 .5 0 (.0 8 9 )
3 D IM E N S IO N S A R E S H O W N
1 .5 0 (.0 5 9 ) M ILL IM E T E R S (IN C H E S ).
5 .5 0 (.2 1 7) 4 4 C O N F O R M S T O JE D E C O U T L IN E
T O -2 4 7 A C .
2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 ) 5 .5 0 (.2 17 )
2X
4 .5 0 (.1 77 ) LEAD A S S IG N M E N T S
1- GATE
1 2 3 2- COLLE CTO R
3- E M IT T E R
4- COLLE CTO R
-C-
1 4 .8 0 (.5 8 3 ) 4 .3 0 (.1 7 0 )
* 1 4 .2 0 (.5 5 9 ) 3 .7 0 (.1 4 5 ) * L O N G E R L E A D E D (2 0m m )
V E R S IO N A V A IL A B LE (T O -24 7 A D )
T O O R D E R A D D "-E " S U F F IX
T O P A R T N U M B ER
2 .4 0 ( .0 9 4 ) 1 .4 0 (.0 5 6 ) 0 .8 0 (.0 3 1 )
2 .0 0 ( .0 7 9 ) 3X 3X
1 .0 0 (.0 3 9 ) 0 .4 0 (.0 1 6 )
2X
0 .2 5 (.0 1 0 ) M C A S 2 .6 0 ( .1 0 2 )
5 .4 5 (.2 1 5 )
3 .4 0 (.1 3 3 ) 2 .2 0 ( .0 8 7 )
2X
3 .0 0 (.1 1 8 )

CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)

D im e n s ion s in M illim e te rs a n d (In c h es )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00

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