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32K X 8 bit
Pb-Free and Green package materials are compliant to RoHS BS62LV256
FEATURES DESCRIPTION
y Wide VCC operation voltage : 2.4V ~ 5.5V The BS62LV256 is a high performance, very low power CMOS Static
y Very low power consumption : Random Access Memory organized as 32,768 by 8 bits and
VCC = 3.0V Operation current : 25mA (Max.) at 70ns operates form a wide range of 2.4V to 5.5V supply voltage.
1mA (Max.) at 1MHz
O O Advanced CMOS technology and circuit techniques provide both
Standby current : 0.4/0.7uA(Max.) at 70 C/85 C
high speed and low power features with maximum CMOS standby
VCC = 5.0V Operation current : 40mA (Max.) at 55ns O
current of 0.7uA/5uA at 3V/5V at 85 C and maximum access time of
2mA (Max.) at 1MHz
O O
Standby current : 4/5uA (Max.) at 70 C/85 C 55/70ns.
y High speed access time : Easy memory expansion is provided by an active LOW chip enable
-55 55ns(Max.) at VCC : 4.5~5.5V (CE), and active LOW output enable (OE) and three-state output
-70 70ns(Max.) at VCC : 3.0~5.5V drivers.
y Automatic power down when chip is deselected The BS62LV256 has an automatic power down feature, reducing the
y Easy expansion with CE and OE options power consumption significantly when chip is deselected.
y Three state outputs and TTL compatible The BS62LV256 is available in DICE form, JEDEC standard 28 pin
y Fully static operation 330mil Plastic SOP, 600mil Plastic DIP, 8mmx13.4mm TSOP
y Data retention supply voltage as low as 1.5V
(normal type).
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT OPERATING STANDBY Operating
PKG TYPE
FAMILY TEMPERATURE (ICCSB1, Max) (ICC, Max)
VCC=5.0V VCC=3.0V
VCC=5.0V VCC=3.0V
1MHz 10MHz fMax. 1MHz 10MHz fMax.
BS62LV256DC DICE
BS62LV256PC Commercial PDIP-28
O O 4.0uA 0.4uA 1.5mA 18mA 35mA 0.8mA 12mA 20mA
BS62LV256SC +0 C to +70 C SOP-28
BS62LV256TC TSOP-28
BS62LV256PI PDIP-28
Industrial
BS62LV256SI O O 5.0uA 0.7uA 2mA 20mA 40mA 1mA 15mA 25mA SOP-28
-40 C to +85 C
BS62LV256TI TSOP-28
A14
A12
1
2
• 28
27
VCC
WE A5
A6
A7 3 26 A13
A7
A6 4 25 A8 Address 9 Memory Array
A12 512
A5 5 24 A9 Row
A14 Input
A4 6 23 A11 Decoder
BS62LV256PC A13 512X512
A3 7 BS62LV256PI 22 OE Buffer
A8
A2 8 BS62LV256SC 21 A10 A9
A1 9 BS62LV256SI 20 CE A11
A0 10 19 DQ7
DQ0 11 18 DQ6 512
DQ1 12 17 DQ5 DQ0 8 Data
8 Column I/O
DQ2 13 16 DQ4 DQ1 Input
GND 14 15 DQ3 Buffer
DQ2 Write Driver
DQ3 Sense Amp
DQ4 8 8
Data
DQ5 Output 64
DQ6 Buffer
OE 1 28 A10 DQ7 Column Decoder
A11 2 27 CE
A9 3 26 DQ7
A8 4 25 DQ6 6
A13 5 24 DQ5 CE
WE 6 23 DQ4 WE Control Address Input Buffer
VCC 7 BS62LV256TC 22 DQ3
A14 8 21 GND OE
BS62LV256TI
A12 9 20 DQ2 VCC
A7 10 19 DQ1
GND A4 A3 A2 A1 A0 A10
A6 11 18 DQ0
A5 12 17 A0
A4 13 16 A1
A3 14 15 A2
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
R0201-BS62LV256 1 Revision
Oct.
2.7
2008
BS62LV256
PIN DESCRIPTIONS
Name Function
A0-A14 Address Input These 15 address inputs select one of the 32,768 x 8-bit in the RAM
CE Chip Enable Input CE is active LOW. Chip enable must be active when data read form or write to the
device. If chip enable is not active, the device is deselected and is in standby power
mode. The DQ pins will be in the high impedance state when the device is deselected.
WE Write Enable Input The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
DQ0-DQ7 Data Input/Output There 8 bi-directional ports are used to read data from or write data into the RAM.
Ports
VCC Power Supply
GND Ground
TRUTH TABLE
NOTES: H means VIH; L means VIL; X means don’t care (Must be VIH or VIL state)
AMBIENT
SYMBOL PARAMETER RATING UNITS RANG VCC
TEMPERATURE
Terminal Voltage with (2) O O
VTERM -0.5 to 7.0 V Commercial 0 C to + 70 C 2.4V ~ 5.5V
Respect to GND
Temperature Under O O O
TBIAS -40 to +125 C Industrial -40 C to + 85 C 2.4V ~ 5.5V
Bias
O
TSTG Storage Temperature -60 to +150 C
PARAMETER
PARAMETER TEST CONDITIONS MIN. TYP.(1) MAX. UNITS
NAME
(2)
VIL Input Low Voltage -0.5 -- 0.8 V
(3)
VIH Input High Voltage 2.2 -- VCC+0.3 V
CE≧VCC-0.2V,
VDR VCC for Data Retention 1.5 -- -- V
VIN≧VCC-0.2V or VIN≦0.2V
CE≧VCC-0.2V,
ICCDR(3) Data Retention Current -- 0.01 0.4 uA
VIN≧VCC-0.2V or VIN≦0.2V
Chip Deselect to Data
tCDR Retention Time
0 -- -- ns
See Retention Waveform
(2)
tR Operation Recovery Time tRC -- -- ns
O
1. Typical characteristics are at VCC=1.5V, TA=25 C and not 100% tested.
2. tRC = Read Cycle Time.
O
3. ICCRD(Max.) is 0.3uA at TA=70 C.
READ CYCLE
ADDRESS
tAA tOH
tOH
DOUT
CE
tACS
(5)
tCHZ (5)
tCLZ
DOUT
tRC
ADDRESS
tAA
OE
tOH
tOE
CE tOLZ
tACS tOHZ(5)
tCLZ(5) tCHZ(1,5)
DOUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL.
5. Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
WRITE CYCLE
tWC
ADDRESS
tWR(3)
OE
tCW(11)
CE (5)
tAW
tWP(2)
WE tAS
tOHZ(4,10)
DOUT
tDH
tDW
DIN
tWC
ADDRESS
tCW(11)
CE (5)
tAW
tWP(2)
WE
tAS
tWHZ(4,10) tOW (7) (8)
DOUT
tDW
tDH (8,9)
DIN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals
must be active to initiate a write and any one signal can terminate a write by going inactive. The
data input setup and hold timing should be referenced to the second transition edge of the
signal that terminates the write.
3. tWR is measured from the earlier of CE or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase to
the outputs must not be applied.
5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE
transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of
opposite phase to the outputs must not be applied to them.
10.Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
11.tCW is measured from the later of CE going low to the end of write.
BS62LV256 X X Z YY
SPEED
55: 55ns
70: 70ns
PKG MATERIAL
G: Green, RoHS Compliant
P: Pb free, RoHS Compliant
GRADE
o o
C: +0 C ~ +70 C
o o
I: -40 C ~ +85 C
PACKAGE
D: DICE
S: SOP
T: TSOP (8mm x 13.4mm)
P: PDIP
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does
not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result
in significant injury or death, including life-support systems and critical medical instruments.
PACKAGE DIMENSIONS
0.020 ± 0.005X45°
b
WITH PLATING
c c1
BASE METAL b1
SOP - 28
A 0.0433±0.004 1.10±0.10
A1 0.0045±0.0026 0.115±0.065
HD e
cL A2 0.039±0.002 1.00±0.05
b 0.009±0.002 0.22±0.05
1 28 E
b1 0.008±0.001 0.20±0.03
b c 0.004 ~ 0.008 0.10 ~ 0.21
c1 0.004 ~ 0.006 0.10 ~ 0.16
D 0.465±0.004 11.80±0.10
E 0.315±0.004 8.00±0.10
Seating Plane y
e 0.022±0.004 0.55±0.10
14 15 12°(2x)
° HD 0.528±0.008 13.40±0.20
"A" L 0.0197 +0.008
- 0.004 0.50 +0.20
- 0.10
D
L1 0.0315±0.004 0.80±0.10
GAUGE PLANE
y 0.004 Max. 0.1 Max.
A A2
A 0 0°~ 8° 0°~ 8°
0.254
0
A1
A
14 15 SEATING PLANE
12°(2x)
L1
"A" DATAIL VIEW
b
WITH PLATING
1 28
c c1
BASE METAL b1
SECTION A-A
TSOP - 28
PDIP - 28