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March 2005
FDS6679
30 Volt P-Channel PowerTrench® MOSFET
D
D 5 4
D
D 6 3
7 2
G
S 8 1
S
SO-8 S
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V
∆BVDSS Breakdown Voltage Temperature
ID = –250 µA, Referenced to 25°C –23 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA
IGSS Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.6 –3 V
∆VGS(th) Gate Threshold Voltage ID = –250 µA, Referenced to 25°C
5 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = –10 V, ID = –13 A 7.3 9 mΩ
On–Resistance VGS = –4.5 V, ID = –11 A 10 13
VGS=–10 V, ID =–13 A, TJ=125°C 9.5 13
ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –50 A
gFS Forward Transconductance VDS = –5 V, ID = –13 A 44 S
Dynamic Characteristics
Ciss Input Capacitance VDS = –15 V, V GS = 0 V, 3939 pF
Coss Output Capacitance f = 1.0 MHz 972 pF
Crss Reverse Transfer Capacitance 498 pF
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
50
3
VGS = -10V
-4.0V
DRAIN-SOURCE ON-RESISTANCE
-6.0V
2.6 VGS = -3.0V
40 -3.5V
-ID, DRAIN CURRENT (A)
-4.5V
RDS(ON), NORMALIZED
2.2
30 -3.0V
1.8 -3.5V
20
-4.0V
1.4 -4.5V
-5.0V
10 -6.0V
-2.5V 1 -10V
0 0.6
0 0.5 1 1.5 2 0 10 20 30 40 50
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DIRAIN CURRENT (A)
1.6 0.04
ID = -13A
DRAIN-SOURCE ON-RESISTANCE
1.4
0.03
RDS(ON), NORMALIZED
1.2 TA = 125oC
0.02
1
TA = 25oC
0.01
0.8
0.6 0
-50 -25 0 25 50 75 100 125 150 175 2 2.5 3 3.5 4 4.5 5
TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V)
50 100
VDS = -5.0V VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
10
40
-ID, DRAIN CURRENT (A)
TA = 125oC
1
30
25oC
0.1
20 -55oC
TA = -125oC 0.01
10 25oC 0.001
-55oC
0 0.0001
1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)
10 6000
VDS = -5V
ID = -13A -10V
-VGS, GATE-SOURCE VOLTAGE (V)
f = 1 MHz
5000 VGS = 0 V
8
-15V CISS
CAPACITANCE (pF)
4000
6
3000
4
2000
2 COSS
1000
CRSS
0 0
0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)
100 50
RDS(ON) LIMIT SINGLE PULSE
P(pk), PEAK TRANSIENT POWER (W)
100µs RθJA = 125°C/W
1ms 40 TA = 25°C
-ID, DRAIN CURRENT (A)
10 10ms
100ms
1s 30
10s
1 DC
20
VGS = -10V
0.1 SINGLE PULSE
10
RθJA = 125oC/W
o
TA = 25 C
0.01 0
0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
-VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
TRANSIENT THERMAL RESISTANCE
1
r(t), NORMALIZED EFFECTIVE
D = 0.5
RθJA(t) = r(t) * RθJA
o
0.2 RθJA = 125 C/W
0.1 0.1
0.05
P(pk)
0.02
t1
0.01
0.01 t2
TJ - TA = P * RθJA(t)
SINGLE PULSE
Duty Cycle, D = t1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)