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FDS6679

March 2005

FDS6679
30 Volt P-Channel PowerTrench® MOSFET

General Description Features


This P-Channel MOSFET has been designed • –13 A, –30 V. RDS(ON) = 9 mΩ @ VGS = –10 V
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional RDS(ON) = 13 mΩ @ VGS = – 4.5 V
switching PWM controllers, and battery chargers.
• Extended VGSS range (±25V) for battery applications
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable • High performance trench technology for extremely
RDS(ON) specifications. low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power • High power and current handling capability
supply designs with higher overall efficiency.

D
D 5 4
D
D 6 3

7 2
G
S 8 1
S
SO-8 S

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units


VDSS Drain-Source Voltage –30 V
VGSS Gate-Source Voltage ±25 V
ID Drain Current – Continuous (Note 1a) –13 A
– Pulsed –50
PD Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1.0
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

Package Marking and Ordering Information


Device Marking Device Reel Size Tape width Quantity
FDS6679 FDS6679 13’’ 12mm 2500 units

FDS6679 Rev C1 (W)


©2005 Fairchild Semiconductor Corporation
FDS6679
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V
∆BVDSS Breakdown Voltage Temperature
ID = –250 µA, Referenced to 25°C –23 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA
IGSS Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.6 –3 V
∆VGS(th) Gate Threshold Voltage ID = –250 µA, Referenced to 25°C
5 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = –10 V, ID = –13 A 7.3 9 mΩ
On–Resistance VGS = –4.5 V, ID = –11 A 10 13
VGS=–10 V, ID =–13 A, TJ=125°C 9.5 13
ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –50 A
gFS Forward Transconductance VDS = –5 V, ID = –13 A 44 S

Dynamic Characteristics
Ciss Input Capacitance VDS = –15 V, V GS = 0 V, 3939 pF
Coss Output Capacitance f = 1.0 MHz 972 pF
Crss Reverse Transfer Capacitance 498 pF

Switching Characteristics (Note 2)


td(on) Turn–On Delay Time VDD = –15 V, ID = –1 A, 19 34 ns
tr Turn–On Rise Time VGS = –10 V, RGEN = 6 Ω 10 20 ns
td(off) Turn–Off Delay Time 110 176 ns
tf Turn–Off Fall Time 65 104 ns
Qg Total Gate Charge VDS = –15 V, ID = –13 A, 71 100 nC
Qgs Gate–Source Charge VGS = –10 V 12 nC
Qgd Gate–Drain Charge 15 nC

Drain–Source Diode Characteristics and Maximum Ratings


IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A
Drain–Source Diode Forward
VSD VGS = 0 V, IS = –2.1 A (Note 2) –0.7 –1.2 V
Voltage

Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 50°C/W (10 sec) b) 105°C/W when c) 125°C/W when mounted on a


62.5°C/W steady state mounted on a .04 in2 minimum pad.
when mounted on a pad of 2 oz copper
1in2 pad of 2 oz
copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS6679 Rev C1 (W)


FDS6679
Typical Characteristics

50
3
VGS = -10V
-4.0V

DRAIN-SOURCE ON-RESISTANCE
-6.0V
2.6 VGS = -3.0V
40 -3.5V
-ID, DRAIN CURRENT (A)

-4.5V

RDS(ON), NORMALIZED
2.2
30 -3.0V

1.8 -3.5V
20
-4.0V
1.4 -4.5V
-5.0V
10 -6.0V
-2.5V 1 -10V

0 0.6
0 0.5 1 1.5 2 0 10 20 30 40 50
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DIRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with


Drain Current and Gate Voltage.

1.6 0.04
ID = -13A
DRAIN-SOURCE ON-RESISTANCE

VGS = -10V ID = -7.0A


RDS(ON), ON-RESISTANCE (OHM)

1.4
0.03
RDS(ON), NORMALIZED

1.2 TA = 125oC

0.02
1
TA = 25oC
0.01
0.8

0.6 0
-50 -25 0 25 50 75 100 125 150 175 2 2.5 3 3.5 4 4.5 5
TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with


Temperature. Gate-to-Source Voltage.

50 100
VDS = -5.0V VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)

10
40
-ID, DRAIN CURRENT (A)

TA = 125oC
1
30
25oC
0.1
20 -55oC
TA = -125oC 0.01

10 25oC 0.001
-55oC
0 0.0001
1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation


with Source Current and Temperature.

FDS6679 Rev C1 (W)


FDS6679
Typical Characteristics

10 6000
VDS = -5V
ID = -13A -10V
-VGS, GATE-SOURCE VOLTAGE (V)

f = 1 MHz
5000 VGS = 0 V
8
-15V CISS

CAPACITANCE (pF)
4000
6

3000
4
2000

2 COSS
1000
CRSS
0 0
0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100 50
RDS(ON) LIMIT SINGLE PULSE
P(pk), PEAK TRANSIENT POWER (W)
100µs RθJA = 125°C/W
1ms 40 TA = 25°C
-ID, DRAIN CURRENT (A)

10 10ms
100ms
1s 30
10s
1 DC
20

VGS = -10V
0.1 SINGLE PULSE
10
RθJA = 125oC/W
o
TA = 25 C
0.01 0
0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
-VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
TRANSIENT THERMAL RESISTANCE

1
r(t), NORMALIZED EFFECTIVE

D = 0.5
RθJA(t) = r(t) * RθJA
o
0.2 RθJA = 125 C/W
0.1 0.1
0.05
P(pk)
0.02
t1
0.01
0.01 t2
TJ - TA = P * RθJA(t)
SINGLE PULSE
Duty Cycle, D = t1 / t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.


Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6679 Rev C1 (W)

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