micromachines

Article
An Improved UU-MESFET with High Power
Added Efficiency
Hujun Jia *, Mei Hu and Shunwei Zhu
Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,
School of Microelectronics, Xidian University, Xi’an 710071, China; humei@stu.xidian.edu.cn (M.H.);
swzhu@stu.xidian.edu.cn (S.Z.)
* Correspondence: hjjia@mail.xidian.edu.cn; Tel.: +86-137-7212-6387




Received: 25 September 2018; Accepted: 30 October 2018; Published: 5 November 2018


Abstract: An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor
(IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh
upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor
(UU-MESFET) structure, and the h is 0.1 µm and 0.2 µm for the IUU-MESFET and UU-MESFET,
respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold
voltage and trans-conductance, and smaller breakdown voltage and saturation drain current,
and when the ultrahigh upper gate height h is 0.1 µm, the relationship between these parameters
is balanced, so as to solve the contradictory relationship that these parameters cannot be improved
simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is
increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

Keywords: 4H-SiC; MESFET; ultrahigh upper gate height; power added efficiency

1. Introduction
As a representative of the third generation semiconductor power radio frequency (RF) device,
4H-SiC metal semiconductor field effect transistors (MESFETs) have excellent DC and RF characteristics,
such as a high output power density, large saturation current, high breakdown voltage, and large
trans-conductance [1–6]. Therefore, 4H-SiC MESFETs have great potential in the fields of radars,
electronic countermeasures, and other electronic systems. In recent years, many scholars have devoted
themselves to studying the direct-current (DC) and RF characteristics of 4H-SiC MESFETs to meet the
requirements of the development of electronic science and technology for 4H-SiC MESFETs. However,
in response to the national “Energy Conservation and Emission Reduction, the Green Development”
call [7,8], to improve the power added efficiency (PAE) of 4H-SiC MESFETs will become a new trend
of research and development.
In this paper, an improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor
(IUU-MESFET) structure with high PAE is proposed based on an ultrahigh upper gate 4H-SiC metal
semiconductor field effect transistor (UU-MESFET) [9]. The proposed IUU-MESFET structure achieves
high PAE by modifying the ultrahigh upper gate height h of the UU-MESFET. This is because increasing
the ultrahigh upper gate height h can reduce the area of the depletion layer under the ultrahigh
upper gate, which not only increases the saturated drain current, but also restrains the expansion
of the depletion layer to source/drain sides and reduces the gate-source capacitance. Meanwhile,
the enhancement of the ultrahigh upper gate height h alleviates the edge effect of the electric field,
thereby improving the breakdown voltage. In sum, the ultrahigh upper gate h affects the DC and RF
characteristics of the device, affecting the PAE of the structure. The IUU-MESFET structure has a larger
threshold voltage and trans-conductance, and smaller breakdown voltage and saturated drain current,

Micromachines 2018, 9, 573; doi:10.3390/mi9110573 www.mdpi.com/journal/micromachines

Micromachines 2018, 9, 573 2 of 5

compared with the2018,

Micromachines UU-MESFET. Additionally,
9, x; doi: FOR PEER REVIEW a small threshold voltage absolute value indicates 2 of 5 that
the IUU-MESFET device is more easily depleted from the steering inversion; a high trans-conductance
voltage and saturated drain current, compared with the UU-MESFET. Additionally, a small threshold
illustrates that the decrease of the distance between the ultrahigh upper gate and the bottom of the
voltage absolute value indicates that the IUU-MESFET device is more easily depleted from the
channel steering
makes the gate voltage
inversion; more capable ofillustrates
a high trans-conductance controlling
thatthe
the drain current
decrease of the in the channel.
distance between Inthegeneral,
the IUU-MESFET balances the size relationship between the structure parameters,
ultrahigh upper gate and the bottom of the channel makes the gate voltage more capable of so that the structure
has highcontrolling
PAE and betterthe drain DCcurrent
and RFincharacteristics.
the channel. In general, the IUU-MESFET balances the size
relationship between the structure parameters, so that the structure has high PAE and better DC and
RFStructure
2. Device characteristics.

The2. schematic cross sections of the UU-MESFET and IUU-MESFET structures are shown in
Device Structure
Figure 1a,b, respectively.
The schematic From
cross the bottom
sections to the
of the top of theand
UU-MESFET twoIUU-MESFET
structures are, in order,
structures area shown
semi-insulating
in
substrate, a p type buffer with a doping concentration of 1.4 × 10 15 cm−3 and a thickness of 0.5 µm,
Figure 1a,b, respectively. From the bottom to the top of the two structures are, in order, a semi-
an n type channelsubstrate,
insulating with a doping
a p type concentration
buffer with a doping × 1017 cm−3ofand
of 3 concentration 1.4 ×a 10
thickness
15 cm−3 and ofa 0.25 µm,ofand two
thickness
0.5 μm, n
highly doped antype
n type channel
cap layerswith
witha doping concentration
a doping of 3 × 10ofcm
concentration 17
1 ×and
−3
cm−3 and
1020a thickness of 0.25 μm,
a thickness of
0.2 µm. and
Thetwo highly doped n type capfollows:
layers with a doping concentration
spacing Lgs of = 10.5
× 10
µm,cmgate
20 −3 and a thickness
same dimensions are as gate-source length Lg = 0.7 µm,
of 0.2 μm. The same dimensions are as follows: gate-source spacing Lgs = 0.5 μm, gate length Lg = 0.7
gate-drain spacing Lgd = 1 µm, the low gate length is 0.35 µm, and the channel is etched 0.05 µm to
μm, gate-drain spacing Lgd = 1 μm, the low gate length is 0.35 μm, and the channel is etched 0.05 μm
form thetolow gate.
form However,
the low the obvious
gate. However, difference
the obvious between
difference thethe
between UU-MESFET
UU-MESFETand and IUU-MESFET
IUU-MESFET is the
ultrahigh upper
is the gate height
ultrahigh h. The
upper gate h of
height the htwo
h. The structures
of the is 0.2isµm
two structures andand
0.2 μm 0.10.1 μm,respectively.
µm, respectively.

gate source gate drain

source Lg=0.7μm drain Lg=0.7μm
N+ N+ N+ Lgs=0.5μm
N+
Lgs=0.5μm h=0.1μm
h=0.2μm 0.05μm
0.05μm 0.25μm 0.35μm Lgd=1μm
Lgd=1μm
0.25μm 0.35μm N-channel
N-channel

0.5μm P-buffer
0.5μm P-buffer

Semi-insulating substrate Semi-insulating substrate

(a) (b)

Figure 1.Figure 1. (a) Structural

(a) Structural crosscross sections
sections of of ultrahigh upper
ultrahigh upper gate
gate4H-SiC
4H-SiCmetal semiconductor
metal field effect
semiconductor field effect
transistor
transistor (UU-MESFET);
(UU-MESFET); (b) Structural
(b) Structural crosssections
cross sections of
of improved
improved ultrahigh upper
ultrahigh gate 4H-SiC
upper metal metal
gate 4H-SiC
semiconductor field effect transistor (IUU-MESFET).
semiconductor field effect transistor (IUU-MESFET).
The DC and RF characteristics of the two structures are simulated by the two-dimensional
Thesimulation
DC andsoftware
RF characteristics of the two structures are simulated by the two-dimensional
integrated systems engineering technology computer aided design (ISE-TCAD)
simulation
basedsoftware
on threeintegrated systems
basic equations engineering(Poisson
of semiconductors technology computer
equation, electronaided design
and hole (ISE-TCAD)
continuity
based on three basic
equation, equations
and electron of semiconductors
and hole drift and diffusion(Poisson equation,
equation). electron
In the process and hole
of advanced continuity
design
equation,system (ADS) simulation
and electron and hole[10], theand
drift eesof scalable nonliear
diffusion GaAsFet
equation). In themodel (EE_FET3)
process is used design
of advanced because system
the model satisfies
(ADS) simulation [10], thethe characteristics
eesof of 4H-SiCGaAsFet
scalable nonliear MESFETs.model
The modified EE_FET3
(EE_FET3) model
is used is put into
because the model
the “Load Pull-PAE, Output Power Contours” of ADS for simulation. Additionally, the working
satisfies the characteristics of 4H-SiC MESFETs. The modified EE_FET3 model is put into the “Load
conditions are set as follows: Vgs is 3.2 V, Vds is 28 V, RF_Req is 850 MHz, Pavs_dBm is 24 dBm, and
Pull-PAE, Output Power
characteristic Contours”
impedance of The
Z0 is 50 Ω. ADS for simulation.
influence Additionally,
of parameters the working
on PAE is obtained conditions
by changing the are
set as follows: Vgs
structural parameters Vds
is 3.2 V, of theisdevice
28 V, and
RF_Req is 850the
maintaining MHz, Pavs_dBm
working is 24 dBm, and characteristic
conditions.
impedance Z0 is 50 Ω. The influence of parameters on PAE is obtained by changing the structural
3. Results
parameters of theand Discussion
device and maintaining the working conditions.
3.1. The Influence of Structural Parameters on Power Added Efficiency (PAE)
3. Results and Discussion
Figures 2 and 3 show the changes in PAE with the trans-conductance (gm), the saturation drain
3.1. The current
Influence
(Id),ofthe
Structural
breakdownParameters
voltage (Vbon Power
), and Added Efficiency
the threshold voltage (V(PAE)
t) for the UU-MESFET structure.

It is found that improving the trans-conductance, the saturation drain current, the breakdown
Figures 2 and 3 show the changes in PAE with the trans-conductance (gm ), the saturation drain
current (Id ), the breakdown voltage (Vb ), and the threshold voltage (Vt ) for the UU-MESFET structure.
It is found that improving the trans-conductance, the saturation drain current, the breakdown voltage,
and the forward conduction threshold voltage is beneficial to increasing the PAE of the UU-MESFET
Micromachines 2018, 9, 573 3 of 5
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Micromachines 2018, 9, x; doi: FOR PEER REVIEW 3 of 5

voltage,
structure. and the forward
By comparing conduction
theconduction thresholdofvoltage
influence threshold
degree is beneficial
structural to increasing
parameters the PAE
on PAE, it canof theseen
UU-
voltage, and the forward voltage is beneficial to increasing the PAE of be
the UU- that the
MESFET structure. By comparing the influence degree of structural parameters on PAE, it can be seen
threshold voltage
MESFET has the
structure. greatest impact
By comparing on PAE,
the influence followed
degree by trans-conductance
of structural parameters on PAE, itand can the breakdown
be seen
that the threshold voltage has the greatest impact on PAE, followed by trans-conductance and the
voltage,breakdown
and the saturation
that the threshold drain current is the least affected. However, there is a contradiction
voltage has the greatest impact on PAE, followed by trans-conductance
voltage, and the saturation drain current is the least affected. However, there is a
and the between
breakdown
the structure voltage,
parameters and
of the the saturation drain current is the least affected. However, there is
beaadded at
contradiction between the IUU-MESFET
structure parametersdevice,of and the structuredevice,
the IUU-MESFET parameters
and thecannot
structure
contradiction between the structure parameters of the IUU-MESFET device, and the structure
the same time, socannot
parameters a suitable ultrahigh
be added upper
at the same gate
time, so height
a suitableh isultrahigh
neededupperto balance theseh parameters
gate height is needed so as
parameters cannot be added at the same time, so a suitable ultrahigh upper gate height h is needed
to balance
to obtain a higher these parameters so as to obtain a higher PAE.
PAE.
to balance these parameters so as to obtain a higher PAE.
Id (mA/mm)
0 100 200Id (mA/mm)
300 400 500 600
0 100 200 300 400 500 600 60
60
70
70 PAE-gm
PAE-gm
PAE-Id
60 50
PAE-Id 50
60
(%)

(%)
50
(%)

(%)
50 40
PAE

PAE
40
PAE

PAE
40
40
30
30 30
30

20 20
20 0 10 20 30 40 50 60 70 80 9020
0 10 20 30gm 40 50 60
(mS/mm) 70 80 90
gm (mS/mm)

2. The
FigureFigure 2. effect of structural
The effect of structuralparameters
parameters ggmmand
and Id power
Id on on power added
added efficiency
efficiency (PAE). (PAE).
Figure 2. The effect of structural parameters gm and Id on power added efficiency (PAE).
Vt (V)
0 -2 -4 Vt (V)-6 -8 -10
0 -2 -4 -6 -8 -10
65 90
65 90

60 80
60 80
PAE-Vb
PAE-Vb
(%)

(%)

55 PAE-Vt 70
(%)

(%)

55 PAE-Vt 70
PAE

PAE
PAE

PAE

50 60
50 60

45 50
45 50

40 40
4030 60 90 120 150 180 210 240 40
30 60 90 120Vb (V)
150 180 210 240
Vb (V)
Figure 3. The effect of structural parameters Vb and Vt on PAE.
Figure 3. The effect of structural parameters Vb and Vt on PAE.
Figure 3. The effect of structural parameters Vb and Vt on PAE.
PAE represents the power amplification capability of the device [10]. Its mathematical expression
PAE represents the power amplification capability of the device [10]. Its mathematical
is shown asPAE
(1). represents
expression
the power
Furthermore, amplification
the maximum
is shown as (1). Furthermore,
capability
the output
maximumpower of the device
density
output
[10]. Its
for a Class
power density
mathematical
A amplifier
for a Class is given by
A amplifier
expression is shown as (1). Furthermore, the maximum output power density for a Class A amplifier
expression (2).
is given by expression (2).
is given by expression (2). Pout − Pin
PAE = − (1)
PAE = −Pdc (1)
PAE = (1)
Id((Vb−− Vknee
) )
= ( −
Pmax = ) (2) (2)
= 88 (2)
8
where Pout is the
Pout is output power of the device, Pin is the is
input power,
inputPPdcdcpower,
is the DC dissipative power,
where where Poutthe output
is the outputpower
power ofofthethe
device, Pin isPthe
device, thepower,
in input is the DCPdc is the DC
dissipative dissipative
power,
and Vknee is the knee voltage. The combination of expressions (1) and (2) can prove that increasing the
power,andand V
Vknee is is the knee voltage. The combination of expressions (1) and (2)
the knee voltage. The combination of expressions (1) and (2) can prove that increasing the
knee can prove that
saturation drain current and the breakdown voltage of the device can enhance the PAE. However,
increasing the saturation
saturation drain currentdrain
andcurrent and thevoltage
the breakdown breakdown voltage
of the device canofenhance
the device can However,
the PAE. enhance the PAE.
the mechanism of increasing PAE by raising the forward conduction threshold voltage and trans-
the mechanism
However, the mechanism of increasing
of PAE by PAE
increasing raising
bythe forward
raising conduction
the forward threshold voltage
conduction and trans-
threshold voltage and
conductance remains to be explored.
conductance remains to be explored.
trans-conductance remains to be explored.

3.2. Optimization and Analysis of the Device Structure

Figure 4a,b show the optimization results obtained by changing the ultrahigh upper gate height h.
It can be seen that the device has the highest PAE when the ultrahigh upper gate height h is 0.1 µm,
and with the increase of the ultrahigh upper gate height h, the saturation drain current and breakdown
 Micromachines 2018, 9, x; doi: FOR PEER REVIEW 4 of 5

3.2. Optimization and Analysis of the Device Structure

Figure 4a,b show the optimization results obtained by changing the ultrahigh upper gate height
h. It can be seen that the device has the highest PAE when the ultrahigh upper gate height h is 0.1 μm,
and2018,
Micromachines with9,the
573 increase of the ultrahigh upper gate height h, the saturation drain current and 4 of 5
breakdown voltage first increase, and finally tend to saturate, whereas the trans-conductance and
threshold voltage decrease by degrees. Therefore, it is impossible to improve PAE by increasing the
breakdown
voltage first increase,voltage, threshold
and finally voltage,
tend saturation
to saturate, drain current,
whereas and trans-conductance
the trans-conductance at the samevoltage
and threshold
decreasetime.
by degrees. Therefore, it is impossible to improve PAE by increasing the breakdown voltage,
threshold voltage, saturation drain current, and trans-conductance at the same time.

75 -7.5 75
PAE -8.0 62

gm(mS/mm)
Vt -8.5 PAE 60

Vt(V)
70 Vb -9.0 70 gm 58
-9.5 Id 56
-10.0
PAE(%)

PAE(%)
-10.5 54
65 65
160 560
140 540

Id(mA/mm)
Vb(V)
60 120 60 520
100 500
80
480
55 60 55
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40
h(μm) h(μm)

(a) (b)

Figure 4.Figure 4. (a)

(a) The The effect
effect of theof ultrahigh
the ultrahigh uppergate
upper gate height
heighth honon
PAE, andand; V
PAE, Vt
(b); The effect of the
b (b) The effect of the
ultrahigh upper gate height h on PAE, and .
ultrahigh upper gate height h on PAE, Vt and Vb .
In order to solve the problem that the structural parameters cannot be increased simultaneously,
In order to solve the problem that the structural parameters cannot be increased simultaneously,
it is necessary to find a suitable ultrahigh upper gate height h to balance the relationship between
it is necessary to findparameters,
these structure a suitableso ultrahigh upper
as to obtain gate
a larger height
PAE. h be
As can to seen
balance
fromthe relationship
Figure between
4, the suitable
these structure
ultrahighparameters, so ash isto0.1
upper gate height obtain a larger
μm. When PAE. Asupper
the ultrahigh can gate
be seen
heightfrom Figure
h is 0.1 4, device
μm, the the suitable
ultrahighstructure has a height
upper gate h is 0.1 µm.
larger threshold voltage and trans-conductance,
When the ultrahigh upper and smaller h is 0.1
breakdown
gate height voltage and device
µm, the
saturation drain current, compared with the device structure with an ultrahigh
structure has a larger threshold voltage and trans-conductance, and smaller breakdown voltage upper gate height of and
0.2 μm. Hence, in order to improve the PAE of the UU-MESFET, we must balance the relationship
saturation drain current, compared with the device structure with an ultrahigh upper gate height of
between structural parameters while pursuing the increase of breakdown voltage, threshold voltage,
0.2 µm. saturation
Hence, indrainorder to improve the PAE of the UU-MESFET, we must balance the relationship
current, and trans-conductance.
between structural parameters while pursuing the increase of breakdown voltage, threshold voltage,
saturation3.3.drain
Discussion of theand
current, Device Structure
trans-conductance.
It can be seen from Figure 4 that the optimal structure known as the IUU-MESFET device is
3.3. Discussion ofwhen
obtained the Device Structure
the ultrahigh upper gate height h = 0.1 μm. Table 1 shows the simulation results by
ISE be
It can TCAD and
seen ADS Figure
from for the UU-MESFET
4 that the and IUU-MESFET.
optimal structure According
knowntoasthethe Table 1, the PAE values
IUU-MESFET device is
of the two structures are 60.16% and 70.99%, respectively. It can be calculated that the IUU-MESFET
obtained when the ultrahigh upper gate height h = 0.1 µm. Table 1 shows the simulation results by
structure has an approximately 18% larger PAE value than that of the UU-MESFET structure.
ISE TCAD and ADS
Therefore, the for the UU-MESFET
IUU-MESFET structure and IUU-MESFET.
obtains According in
a significant improvement toPAE.
the Table 1, the PAE values
of the two structures are 60.16% and 70.99%, respectively. It can be calculated that the IUU-MESFET
Table 1.18%
structure has an approximately Comparison
larger of
PAEstructural
valueparameters
than thatforofthe
thetwo structures.
UU-MESFET structure. Therefore,
the IUU-MESFET structure obtains a significant
Parameter improvement
UU-MESFET in PAE.
IUU-MESFET
Vt (V) −9.82 −9.17
Table 1. Comparison of structural
gm (mS/mm) parameters for
55.93 the two structures.
57.84
Vb (V) 156 143
Parameter
Id (mA/mm) UU-MESFET
549.28 IUU-MESFET
530.20
PAE (%)
Vt (V) 60.16
− 9.82 70.99
−9.17
gm (mS/mm) 55.93 57.84
Vb (V) 156 143
Id (mA/mm) 549.28 530.20
PAE (%) 60.16 70.99

It can also be found from Table 1 that the UU-MESFET structure has a larger saturation drain
current and breakdown voltage, and the IUU-MESFET structure has a greater threshold voltage and
trans-conductance. Therefore, from the DC and RF characteristics of the MESFETs, the UU-MESFET
structure is a good choice. However, in terms of efficiency, the UU-MESFET structure is the best.
This shows that PAE is not always the best when the MESFETs exhibit a good performance.
Micromachines 2018, 9, 573 5 of 5

4. Conclusions
In this paper, how to improve the PAE of the UU-MESFET structure has been studied, and the
IUU-MESFET structure with high PAE is obtained when the ultrahigh upper gate height h is 0.1 µm.
The simulation results indicate that improving the threshold voltage, trans-conductance, breakdown
voltage, and saturation drain current can increase the PAE of the UU-MESFET. It is found that
enhancing the ultrahigh upper gate height h can increase the breakdown voltage and saturation drain
current, and reduce the trans-conductance and threshold voltage. When h is 0.1 µm, the IUU-MESFET
structure has a high PAE value and better DC and RF characteristics. The simulation results of ISE
TCAD and ADS show that in order to improve the PAE of the UU-MESFET device, the breakdown
voltage, the threshold voltage, the trans-conductance, and the saturation drain current should be
increased, and the size relationship between them should be balanced. This may serve as a general
design direction for improving the PAE of 4H-SiC MESFETs.

Author Contributions: Project Administration, H.J.; Writing—Original Draft Preparation, M.H.; Writing—Review
and Editing, S.Z.
Funding: This work was supported in part by the National Natural Science Foundation of China (NSFC) under
Grant No. 61671343, and in part by the National Key Basic Research Program of China (973 Program) under grant
No. 2014CB339900.
Conflicts of Interest: The authors declare no conflict of interest.

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