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Article history: Tetraethyl orthosilicate (TEOS) was commonly served as a sintering additive to promote the densification
Received 19 January 2017 of transparent Y3 Al5 O12 (YAG) ceramics. However, Si4+ that decomposed from TEOS would restrain the
Received in revised form 14 May 2017 conversion of dopants into a higher valence state (e.g., Cr3+ → Cr4+ ). In this study, by using divalent sinter-
Accepted 15 May 2017
ing additives (CaO and MgO), the colorless and highly transparent YAG ceramics (T = 84.6%, at 1064 nm)
Available online 22 May 2017
were obtained after vacuum sintering at 1840 ◦ C for 8 h and without subsequent annealing in air. An
absorption peak centered at ∼320 nm was observed before annealing, and it extended to ∼550 nm after
Keywords:
annealing at 1450 ◦ C for 10 h in air. A discoloration phenomenon occurred and more scattering centers
Transparent ceramics
Annealing
were observed with the formation of new [Mg/Ca2+ F+ ] color centers. Air annealing did not improve the
YAG optical quality of the as-fabricated YAG ceramics with divalent dopants as sintering additives, owing to
Sintering additives the formation of scattering centers.
Optical property © 2017 Elsevier Ltd. All rights reserved.
http://dx.doi.org/10.1016/j.jeurceramsoc.2017.05.030
0955-2219/© 2017 Elsevier Ltd. All rights reserved.
4124 T. Zhou et al. / Journal of the European Ceramic Society 37 (2017) 4123–4128
Fig. 2. SEM micrographs of the fracture surfaces of samples sintered at (a) 1580 ◦ C, (b) 1620 ◦ C, (c) 1660 ◦ C, (d) 1700 ◦ C, (e) 1740 ◦ C, (f) 1780 ◦ C for 4 h.
phology of pores was transformed into isolated pores (Fig. 2(b)). as sintering additive at the same transmission [26–28], even though
Then, the sample reached its final sintering stage. Residual pores a moderate amount of TEOS could also inhibit the grain growth
could hardly be detected when the sintering temperature was of YAG ceramics according to Maître’s report [29]. Consequently,
increased to 1660 ◦ C or higher. The average grain size of ceramic the results presented here indicate that adopting divalent dopants
dramatically increased when the further increase in sintering tem- as sintering additive is an effective approach for the inhibition of
peratures (Fig. 2(c–f)). grain growth while promoting the transmission of YAG transparent
Fig. 3 shows the SEM micrographs of the thermally etched sur- ceramic. The transmittance of the sample after air annealing was
face and fracture surface of the ceramics vacuum sintered at 1840 ◦ C not as high as that of the sample without annealing, and the absorp-
for 8 h, and the etching process was carried out at 1450 ◦ C for 2 h tion band in the UV–visible region extended to ∼550 nm, resulting
in air. It could be clearly seen that the sample exhibited a fully in the discoloration of sample.
dense microstructure, and there was no pores or secondary phase Generally, pressure induced oxygen vacancies associated with
observed. The average grain size of the ceramics after sintering was free electrons are easily generated during vacuum sintering accord-
5.3 m, and its fracture mode was mainly characterized as trans- ing to Eq. (1), owing to the oxygen partial pressure difference
granular mold. between the ceramic interior and the chamber of vacuum furnace.
The photograph and the in-line transmission spectra of vac- As is depicted in Fig. 5 (a), these pressure induced oxygen vacancies
uum sintered samples with and without air annealing are shown were unstable. As a result, the F color centers were formed when
in Fig. 4. The vacuum sintered sample before air annealing was free electrons were captured by these oxygen vacancies according
highly transparent, and the words behind it could be clearly rec- to Eq. (2) and (3), which were quite unanimously considered as the
ognized by the naked eyes. The air-annealed sample was slightly cause of absorption and in the near UV region [30] (peak at 320 nm
hazy (especially at its central part), indicating a decrease in its trans- in Fig. 4):
parency. In addition, a discoloration phenomenon occurred in the
air-annealed sample, indicating that a new light absorption band 1
OO = VO + O2 ↑ +2e (1)
was formed. The transmittance of the sample at 1064 nm before 2
annealing was as high as 84.6%; it nearly reached the theoretical
limit of YAG. More importantly, the average grain size at this trans- VO + e = VO F+ (2)
mission was only 5.3 m (see Fig. 3). It was much smaller than that
of previously reported vacuum sintered YAG ceramics using TEOS VO + 2e = VX (3)
O (F)
4126 T. Zhou et al. / Journal of the European Ceramic Society 37 (2017) 4123–4128
Fig. 3. SEM micrographs of thermally etched surface (a) and fracture surface (b) of the YAG sample sintered at 1840 ◦ C for 8 h in vacuum.
With respect to YAG transparent ceramics, the more oxygen Fig. 4. A photograph and in-line transmission spectra of vacuum sintered samples
vacancies that have been generated, the harder to generate addi- before and after annealing.
tional oxygen vacancies during sintering, because of the dynamic
equilibrium of [VO· · ] concentration. This implies that the presence of vacancy, Si4+ doping would generate more pressure induced oxy-
divalent ion induced oxygen vacancy would no doubt suppress the gen vacancies V..O under high temperature and vacuum atmosphere,
generation of pressure induced oxygen vacancy. Therefore, even see Fig. 5 (b).
though Ca2+ and Mg2+ dopant did not directly affect the PO2 accord- It is noteworthy to see that the color of the sample without air
ing to the Eq. (4) and (5), the presence of Ca2+ and Mg2+ would annealing was almost colorless. Zhang et al. [38] fabricated YAG
reduce the concentration of pressure induced oxygen vacancy (not transparent ceramics using TEOS as sintering additive, and the sam-
the total amount of [VO· · ]) indirectly, and thus driven the equilib- ple after vacuum sintering was grey, which was inconsistent with
rium (1) to the left. Consequently, the internal oxygen pressure the current study where divalent additives was used in the sinter-
of ceramics was thus affected. For the charge compensation pur- ing process. They regarded the gray tint was originated from the
pose, divalent ion induced oxygen vacancies are stable, and it was color centers generated during vacuum sintering. In fact, it was
much harder for them to capture free electrons to form color cen- not the case. As known, even though Si4+ could promote the for-
ters compared with the pressure induced vacancies. In this case, the mation of additional pressure induced oxygen vacancies (and the
amount of F-centers decreased by introducing divalent dopants. amount of F-centers increased as well) as mentioned, a grey tint
However, the formation of pressure induced color centers could required a uniform lowering of transmission (over the whole VIS
not be completely prevented by divalent ions, leading to the resid- region). It could not come from the advancement into VIS of color
ual absorption at the UV–vis region centered at ∼320 nm shown in center bands. Such bands, when advancing, produce first various
Fig. 4. Besides, HIP treatment has been proved to be an effective chromatic colors and then black. According to Zhang’s report, air
way to further eliminate such absorption [36]. annealing eliminated the cause of grey, as shown by the general
It has been quantitatively proved by Kuklja et al. that Si4+ incor- rise of transmission in VIS region. However, simultaneously the
poration in YAG lattice is associated with the formation of cation absorption edge shifted in a bathochrome sense. This could not hap-
vacancy and the antisite Si.Al defect according to this reaction [37]: pen under air annealing, if this process reduced the color centers
concentration, supposing centers were presented in as-fired spec-
5 1 · 1 1
2SiO2 + Al + YY = SiAl + V’’’ + Y3 Al5 O12 (6) imens. Therefore, air annealing affected other factors (e.g. Si0 , W0
6 Al 2 3 Y 6
impurities) which were the real causes of grey color, which was fur-
In this case, the presence of cation vacancies V’”
Y would likely ther confirmed by Adam’ results [39]. Consequently, the colorless
to accelerate the intrinsic thermal defects generation like Frenkel of ceramics in our work was more likely owing to the high purity
defect pair under high temperature, which would make oxygen of starting powders, but not the reduced amount of color centers.
ions in YAG lattice unstable. Compared with divalent ion doping, Fig. 6 is the optical transmission photo of the central part of
which would suppress the generation of pressure induced oxygen the vacuum sintered samples before and after annealing observed
T. Zhou et al. / Journal of the European Ceramic Society 37 (2017) 4123–4128 4127
Fig. 5. Schematic diagram of substitution process in YAG lattice by (a) divalent ion, (b) tetravalent ion during vacuum sintering.
Fig. 6. Optical transmission micrographs of vacuum sintered YAG samples and (a) before annealing, (b) annealed at 1450 ◦ C for 10 h in air.
under open polarizers. From Fig. 6 (a), it is evident that the vacuum 6
3+
sintered sample without air annealing exhibited a homogeneous Absorption of Fe ions
Residual absorption (cm )
5
in vacuum, indicating its excellent optical quality. On the contrary,
optically inhomogeneous scattering centers could be observed
Absorption caused by
4
from the depth direction of the air annealed sample (Fig. 6 (b)), lead-
ing to the decrease of its transparency at the non-absorption band. Scatting loss and
3 Scatting loss
Therefore, it is clear that annealing under high temperature and color centers
oxygen enriched atmosphere has a negative effect on the optical
quality of YAG ceramics using divalent dopants as sintering addi- 2
tives. One possible reason is that under high temperature annealing
treatment, residual small nanopores or vacancy clusters are dif- 1
fused and then combined into big ones, even though they could
not be observed from the sample without air annealing, thanks to 0
their homogeneous distribution, small sizes, and loss of activity. 200 400 600 800 1000
In order to further investigate the discoloration phenomenon Wavelength (nm)
of the annealed sample, we made a comparison of the absorp-
Fig. 7. Absorption property of the sample vacuum sintered and then air annealed
tion properties of the vacuum sintered samples with and without
at 1450 ◦ C for 10 h in air.
annealing (i.e., the absorption coefficient of the sample after air
annealing minus that of before annealing). In Fig. 7, the residual
absorption from 550 to 1000 nm was caused by scattering cen- ions. As a result, a F+ color center was generated when a divalent
ters. Notably, a strong absorption band centered at ∼255 nm could ion induced oxygen vacancy lost one electron. Although Ca2+ and
be observed, corresponding to the absorption of oxidized trivalent Mg2+ were truly Ca,Y and Mg,Al , respectively, and charge compen-
Fe3+ ion [39,40], owing to Y2 O3 raw powder (rare earth) was hard sation is required, if they substitute the Y3+ or Al3+ cations in YAG
to purify. Besides that, another wide absorption band extended to lattice to promote charge balance. As a result, these F+ color centers
∼550 nm could also be observed. Lu et al. [36] observed the same were ready to combine with the nearby Ca2+ or Mg2+ that substi-
phenomenon in Yb doped YAG ceramics only using MgO as the tuted Y3+ or Al3+ sites to form new types of color centers [Mg2+ F+ ] or
sintering additive. One explanation is that the pressure induced [Ca2+ F+ ] in a form of trivalent, in order to compensate charge imbal-
oxygen vacancies are compensated by oxygen under high temper- ance when divalent dopants substitute the original cations in YAG
ature and oxygen enriched annealing atmosphere, and divalent ion lattice, leading to the discoloration of the sample after air anneal-
induced oxygen vacancies could not be eliminated by an annealing ing. In addition, color centers are acted as a kind of defect, and they
process, thanks to the stable charge state of the applied divalent would diffuse and couple with each other under high temperature
4128 T. Zhou et al. / Journal of the European Ceramic Society 37 (2017) 4123–4128
annealing treatment to form more complex color center systems [14] B. Liu, J. Li, R. Yavetskiy, M. Ivanov, Y. Zeng, T. Xie, H. Kou, S. Zhuo, Y. Pan, J.
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