NEC PNP SILICON TRANSISTOR 2SB605 DESCRIPTION The 258605 is designed for use in driver and output stages of a PACKAGE DIMENSIONS inane nee FEATURES © High Total Power Dispation and High Breakdown Voltage a 1.0 W at 25 °C Ambient Temperature/Vceo = -50 V sus bel ad en ABSOLUTE MAXIMUM RATINGS ‘gn ‘Maximum Temperatures 6:01 Storage Temperature cee 85 to #180 °C 32) Junction Temperature +150°C Maximum Maximum Power Dissipation (Ta=25 °C) Total Power Dissipation ........ 0.2.60. LOW Thermal Resistance(Junction to Ambient). . 125 °C/W ‘Maximum Voltages and Currents (Ta=25 °C) = Veso Collector to Base Voltage -oov | y Stecton © Veeo Collector to Emitter Voltage -sov L& Base Vego Emitter to Base Voltage ........... -5.0V Ie Collector Current -0.78 Wy Base Current... sceeeeeeeeese | “OTA ELECTRICAL CHARACTERISTICS (Ta = 25°C) ‘SYMGOL CHARACTERISTIC MIN, Tv, MAK, UNIT TEST CONDITIONS: hee BG Current Gain 9 ~200~*~«OS Vee=-1.0V, Ie=-0.1 A bree De Current Gain 50120 - Voe=-1.0 V, Ig=-0.5 A fr Gain Bordwideh Product 120 mane Cob Collector to Bate Capacitance Eo °F 'e80 Collector Cutotf Current -100 aa. es0 Emitter Cutot Current 100 aa 5.0 V, Ier0 Vee Base to Emitter Voltage “600-630-700, mV Vce=-6.0V, Ie=—10 mA, Vege) Collector Saturstion Voltage “016-035 VIg=-0.5.A, 1g—005 4 Veet) Bate Saturation Voltage 9 412 Classification of heey Rank| t K Range [90-180 | 195-270 | 200-400 Thre} Test Conditions: VeE=-1.0 V, Ic=-0.1 A 2032SB605 TYPICAL CHARACTERISTICS (Ta=25 °C unless otherwise noted) € OPERATING ARE, moan rotten DiseleA TN (rRaNSienr THERMAL RESISTANCE) AMBIENT TeMPERATUR NEC covtecton cunneNt we ESLtEcTOR TO EMITTER VOLTAGE i oz é o covtector cunReNT LAseTOR SATURAT LLEETOR TO EMITTER VOLTAGE "A THA \ outer caren 204 meSoRtzerw Sbanene GAIN BaNOWIOTH PRODUCT ve SITE CURREN:NEC EBCLEcron To Base VoLTAGe acetate to Base Capactone—oF 2SB605 205