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General Description
N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded
protection functions.
Vbb
HITFET â
Drain
Over-
Overload Short circuit
ESD temperature
Protection Protection
Protection Pin 3
Source
Thermal resistance
junction - case: R thJC 1.5 K/W
SMD: junction - ambient R thJA
@ min. footprint 115
@ 6 cm 2 cooling area 4) 55
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Characteristics
Drain source clamp voltage VDS(AZ) 42 - 55 V
Tj = - 40 ...+ 150, ID = 10 mA
Off-state drain current IDSS µA
Tj = -40...+85 °C, V DS = 32 V , VIN = 0 V - 1.5 8
Tj = 150 °C - 5 15
Input threshold voltage VIN(th) V
ID = 1.4 mA, T j = 25 °C 1.3 1.7 2.2
ID = 1.4 mA, T j = 150 °C 0.8 - -
On state input current IIN(on) - 10 30 µA
On-state resistance R DS(on) mW
VIN = 5 V, ID = 3 A, Tj = 25 °C - 45 60
VIN = 5 V, ID = 3 A, Tj = 150 °C - 75 100
On-state resistance R DS(on)
VIN = 10 V, I D = 3 A, T j = 25 °C - 35 50
VIN = 10 V, I D = 3 A, T j = 150 °C - 65 90
Nominal load current 5) ID(Nom) 3.5 4.6 - A
Tj < 150°C, V IN = 10 V, TA = 85 °C, SMD 1)
Nominal load current 5) ID(ISO) 7.1 10 -
VIN = 10 V, VDS = 0.5 V, TC = 85 °C, Tj < 150°C
Current limit (active if VDS>2.5 V)2) ID(lim) 18 24 30
VIN = 10 V, VDS = 12 V, t m = 200 µs
1@ 6 cm2 cooling area
2Device switched on into existing short circuit (see diagram Determination of I
D(lim) ). If the device is in on condit
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5not subject to production test, calculated by R
thJA and Rds(on)
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Turn-on time VIN to 90% ID : ton - 60 100 µs
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
Turn-off time VIN to 10% ID: toff - 60 100
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on 70 to 50% Vbb: -dVDS/dt on - 0.3 1.5 V/µs
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off 50 to 70% Vbb: dVDS/dtoff - 0.7 1.5
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions1)
Thermal overload trip temperature Tjt 150 175 - °C
Thermal hysteresis 2) DT jt - 10 - K
Input current protection mode IIN(Prot) - 130 300 µA
Tj = 150 °C
Unclamped single pulse inductive energy 2) EAS 3 - - J
ID = 3 A, Tj = 25 °C, Vbb = 12 V
Inverse Diode
Inverse diode forward voltage VSD - 1.0 1.5 V
IF = 15 A, tm = 250 µs, V IN = 0 V,
tP = 300 µs
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
Block diagram
RL
V D
Z
I IN 2
D
IN
1 ID VDS Vbb
HITFET
S
3 S
VIN
HITFET
Gate Drive
Input
VIN
Source/
Ground IIN
IDS
Tj
mW max.
W
Rthjc = 1.5 K/W
80
RDS(on)
70
2 typ.
Ptot
SMD @ 6cm2 60
1.5 50
40
1
30
20
0.5
10
0 0
-50 -25 0 25 50 75 100 °C 150 -50 -25 0 25 50 75 100 125 °C 175
TA;TC Tj
110 2
mW max. V
90
1.6
RDS(on)
80
VGS(th)
typ. 1.4
70
1.2
60
1
50
0.8
40
0.6
30
20 0.4
10 0.2
0 0
-50 -25 0 25 50 75 100 125 °C 175 -50 -25 0 25 50 75 100 °C 150
Tj Tj
A A
ID(SC)
20 20
ID
Vin=10V
15 15
5V
10 10
5 5
0 0
0 1 2 3 4 5 6 7 8 V 10 -50 -25 0 25 50 75 100 125 °C 175
VIN Tj
7V
12
25
IDSS
6V
ID
10
20 5V
4V
8
15
6
typ.
10
Vin=3V
4
5
2
0 0
0 1 2 3 4 V 6 -40 -15 10 35 60 85 110 135 °C 185
VDS Tj
30 0.1
ID(lim)
0.05
ZthJA
25°C
25 10 0 0.02
0.01
20 85°C
-1
10
15
150°C
10
-2
10
5 Single pulse
-3
0 10 -7 -6 -5 -4 -3 -2 -1 0 1 3
0 1 2 3 ms 5 10 10 10 10 10 10 10 10 10 s 10
t tp
11 Determination of ID(lim)
ID(lim) = f(t); t m = 200µs
Parameter: TJstart
40
30 -40°C
ID(lim)
25
25°C
20
85°C
15
150°C
10
0
0 0.1 0.2 0.3 0.4 ms 0.6
Package Outlines
1 Package Outlines
6.5 +0.15
-0.05
A 2.3 +0.05
5.4 ±0.1 -0.10
0.9 +0.20
-0.01
0.8 ±0.15
6.22 -0.2
9.98 ±0.5
0...0.15
0.51 MIN.
0.15 MAX.
per side 3x
0.75 ±0.1 0.5 +0.08
-0.04
2.28
0.1 B
4.57
0.25 M A B
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mm
Revision History
2 Revision History
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stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
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