FGH80N60FD2 600V, 80A Field Stop IGBT

November

FGH80N60FD2 tm

600V, 80A Field Stop IGBT

Features General Description
• High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
• Low saturation voltage: VCE(sat) =1.8V @ IC = 40A ries of Field Stop IGBTs offer the optimum performance for
Induction Heating applications where low conduction and
• High input impedance
switching losses are essential.
• Fast switching
• RoHS compliant

Applications
• Induction Heating Application

E C
C
G

COLLECTOR G
(FLANGE)
E

Absolute Maximum Ratings

Symbol Description Ratings Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage  20 V
Collector Current @ TC = 25C 80 A
IC
Collector Current @ TC = 100C 40 A
ICM (1) Pulsed Collector Current @ TC = 25C 160 A
Maximum Power Dissipation @ TC = 25C 290 W
PD
Maximum Power Dissipation @ TC = 100C 116 W
TJ Operating Junction Temperature -55 to +150 C
Tstg Storage Temperature Range -55 to +150 C
Maximum Lead Temp. for soldering
TL
Purposes, 1/8” from case for 5 seconds 300 C

Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Units
RJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.43 C/W
RJC(Diode) Thermal Resistance, Junction-to-Case 1.45 C/W
RJA Thermal Resistance, Junction-to-Ambient -- 40 C/W

©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH80N60FD Rev. A2
 FGH80N60FD2 600V, 80A Field Stop IGBT
Package Marking and Ordering Information
Max Qty
Packaging
Device Marking Device Package Type Qty per Tube per Box
FGH80N60FD2 FGH80N60FD2TU TO-247 Tube 30ea -

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
BVCES/ Temperature Coefficient of Breakdown VGE = 0V, IC = 250uA
TJ Voltage -- 0.6 -- V/C

ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA

IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ±400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE 4.5 5.5 7.0 V
IC = 40A, VGE = 15V -- 1.8 2.4 V
VCE(sat) Collector to Emitter
IC = 40A, VGE = 15V,
Saturation Voltage -- 2.05 -- V
TC = 125C

Dynamic Characteristics
Cies Input Capacitance -- 2110 -- pF
Coes Output Capacitance VCE = 30V, VGE = 0V, -- 200 -- pF
f = 1MHz
Cres Reverse Transfer Capacitance -- 60 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 21 -- ns
tr Rise Time -- 56 -- ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 40A, -- 126 -- ns
tf Fall Time RG = 10, VGE = 15V, -- 50 100 ns
Inductive Load, TC = 25C
Eon Turn-On Switching Loss -- 1 1.5 mJ
Eoff Turn-Off Switching Loss -- 0.52 0.78 mJ
Ets Total Switching Loss -- 1.52 2.28 mJ
td(on) Turn-On Delay Time -- 20 -- ns
tr Rise Time -- 54 -- ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 40A, -- 131 -- ns
tf Fall Time RG = 10, VGE = 15V, -- 70 -- ns
Inductive Load, TC = 125C
Eon Turn-On Switching Loss -- 1.1 -- mJ
Eoff Turn-Off Switching Loss -- 0.78 -- mJ
Ets Total Switching Loss -- 1.88 -- mJ
Qg Total Gate Charge -- 120 -- nC
Qge Gate-Emitter Charge VCE = 400 V, IC = 40A, -- 14 -- nC
VGE = 15V
Qgc Gate-Collector Charge -- 58 -- nC

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FGH80N60FD Rev. A2
 FGH80N60FD2 600V, 80A Field Stop IGBT
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Units

TC = 25C - 1.2 1.5
VFM Diode Forward Voltage IF = 15A V
TC = 125C - 1.0 -
TC = 25C - 61 -
trr Diode Reverse Recovery Time ns
TC = 125C - 125 -
IES =15A, dIES/dt = 200A/s
TC = 25C - 4.8 -
Irr Diode Reverse Recovery Current A
TC = 125C - 8.4 -
TC = 25C - 146 -
Qrr Diode Reverse Recovery Charge nC
TC = 125C - 525 -

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FGH80N60FD Rev. A2
 FGH80N60FD2 600V, 80A Field Stop IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage

Characteristics
160 160
o o
TC = 25 C 15V TC = 125 C 15V
20V 20V
12V 12V
Collector Current, IC [A]

Collector Current, IC [A]

120 120
10V
10V

80 80

40 40
VGE = 8V VGE = 8V

0 0
0 2 4 6 8 10 0 2 4 6 8 10
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteritics
160 160
Common Emitter Common Emitter
VCE = 20V
VGE = 15V
o
o TC = 25 C
TC = 25 C
120 120 o
Collector Current, IC [A]
Collector Current, IC [A]

o TC = 125 C
TC = 125 C

80 80

40 40

0 0
0 1 2 3 4 5 6 2 4 6 8 10 12
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. Vge
3.5 Temperature at Variant Current Level
20
Collector-Emitter Voltage, VCE [V]

Common Emitter
o
Collector-Emitter Voltage, VCE [V]

TC = 25 C
3.0
80A 16

2.5 12

40A
2.0 8

40A
20A
1.5 4 80A
Common Emitter
IC = 20A
VGE = 15V
1.0 0
25 50 75 100 125 4 8 12 16 20
o Gate-Emitter Voltage, VGE [V]
Case Temperature, TC [ C]

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FGH80N60FD Rev. A2
 FGH80N60FD2 600V, 80A Field Stop IGBT
Typical Performance Characteristics (Continued)

Figure 7. Saturation Voltage vs. Vge Figure 8. Capacitance Characteristics

20 5000
Common Emitter Common Emitter
o VGE = 0V, f = 1MHz
TC = 125 C
Collector-Emitter Voltage, VCE [V]

o
16 4000 Ciss TC = 25 C

Capacitance [pF]
12 3000

Coss
8 2000

40A
4 80A 1000
Crss
IC = 20A
0 0
4 8 12 16 20 0.1 1 10 30
Gate-Emitter Voltage, VGE [V] Collector-Emitter Voltage, VCE [V]

Figure 9. Gate Charge Characteristics Figure 10. SOA Characteeristics

15 400
Common Emitter
o
TC = 25 C 100 10s
Gate-Emitter Voltage, VGE [V]

12
Collector Current, Ic [A]

200V 100s
Vcc = 100V 300V 10
9 1ms

10 ms
1
6 DC
Single Nonrepetitive
Pulse TC = 25oC
3 0.1 Curves must be derated
linearly with increase
in temperature

0 0.01
0 50 100 150 1 10 100 1000
Gate Charge, Qg [nC] Collector-Emitter Voltage, VCE [V]

Figure 11. Turn-Off Switching SOA Figure 12. Turn-On Characteristics vs.
Characteristics Gate Resistance

200 200

100
100
Collector Current, IC [A]

Switching Time [ns]

tr

10
Common Emitter
td(on) VCC = 400V, VGE = 15V
IC = 40A
10 o
TC = 25 C
Safe Operating Area
o o
VGE = 20V, TC = 100 C TC = 125 C
1 5
1 10 100 1000 0 10 20 30 40 50
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG []

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FGH80N60FD Rev. A2
 FGH80N60FD2 600V, 80A Field Stop IGBT
Typical Performance Characteristics (Continued)

Figure 13. Turn-Off Characteristics vs. Figure 14. Turn-On Characteristics vs.
Gate Resistance Collector Current

2000 Common Emitter 200

Common Emitter
VCC = 400V, VGE = 15V VGE = 15V, RG = 10
1000 IC = 40A o
TC = 25 C
o 100 tr
TC = 25 C o
o
TC = 125 C

Switching Time [ns]

Switching Time [ns]

TC = 125 C
td(off)

100

tf
td(on)

10 10
0 10 20 30 40 50 20 40 60 80
Gate Resistance, RG [] Collector Current, IC [A]

Figure 15. Turn-Off Characteristics vs. Figure 16. Switching Loss vs Gate Resistance
Collector Current
500 5
Common Emitter Common Emitter
VGE = 15V, RG = 10 VCC = 400V, VGE = 15V
o
TC = 25 C IC = 40A
o o
TC = 125 C TC = 25 C
Switching Time [ns]

Switching Loss [mJ]

td(off) o
TC = 125 C Eon

100
Eoff
tf
1

20 0.3
20 40 60 80 0 10 20 30 40 50
Collector Current, IC [A] Gate Resistance, RG []

Figure 17. Switching Loss vs Collector Current

10
Common Emitter
VGE = 15V, RG = 10
o Eon
TC = 25 C
o
TC = 125 C
Switching Loss [mJ]

Eoff
1

0.1
20 40 60 80
Collector Current, IC [A]

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FGH80N60FD Rev. A2
 FGH80N60FD2 600V, 80A Field Stop IGBT
Typical Performance Characteristics (Continued)

Figure 18. Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

0.5
0.1 0.2
0.1
0.05
0.02
0.01 0.01 PDM

single pulse t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

Figure 19. Typical Forward Voltage Drop Figure 20. Stored Charge
1000
Stored Recovery Charge , Qrr [nC]
Forward Current , IF [A]

800
10
o o
TC = 125 C 125 C

o 600
TC = 25 C

1 400

o
200 25 C

0.1 0
0 1 2 3 100 200 300 400
Forward Voltage , VF [V] di/dt ,[A/s]

Figure 21. Reverse Recovery Time Figure 22. Reverse Recovery Current

160 20
Reverse Recovery Current, Irr [A]
Reverse Recovery Time, trr [ns]

140

15
120
o
125 C
100 o
10 125 C

80

60
5
o o
25 C 25 C
40

20 0
100
5 200 300 400 5
100 200 300 400
di/dt, [A/s] di/dt, [A/ s]

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FGH80N60FD Rev. A2
 FGH80N60FD2 600V, 80A Field Stop IGBT
Mechanical Dimensions

TO-247AD (FKS PKG CODE 001)

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FGH80N60FD Rev. A2
 FGH80N60FD2 600V, 80A Field Stop IGBT
tm

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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.

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reserves the right to make changes at any time without notice to
improve design.

Obsolete Not In Production This datasheet contains specifications on a product that has been dis-
continued by Fairchild Semiconductor.The datasheet is printed for refer-
ence information only.
Rev. I28

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FGH80N60FD Rev. A2