AON6418

30V N-Channel MOSFET

SDMOS TM

General Description Product Summary

The AON6418 is fabricated with SDMOSTM trench VDS 30V

technology that combines excellent RDS(ON) with low gate ID (at VGS=10V) 36A
charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 5.5mΩ
switching behavior. This universal technology is well RDS(ON) (at VGS = 4.5V) < 9.5mΩ
suited for PWM, load switching and general purpose
applications.

100% UIS Tested

100% Rg Tested

DFN5X6 D
Top View
Top View Bottom View
1 8

2 7

3 6

4 5
G

PIN1 S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 36
ID
Current G TC=100°C 28 A
C
Pulsed Drain Current IDM 150
Continuous Drain TA=25°C 14
IDSM A
Current TA=70°C 11
Avalanche Current C IAS, IAR 35 A
Avalanche energy L=0.1mH C EAS, EAR 61 mJ
TC=25°C 36
B
PD W
Power Dissipation TC=100°C 14
TA=25°C 2
PDSM W
Power Dissipation A TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 24 30 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 53 64 °C/W
Maximum Junction-to-Case Steady-State RθJC 2.6 3.5 °C/W

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 AON6418

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 100
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 500
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.6 2.1 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 150 A
VGS=10V, ID=20A 4.6 5.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 7.3 8.8
VGS=4.5V, ID=10A 7.9 9.5 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 50 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 45 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1630 2037 2440 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 260 375 490 pF
Crss Reverse Transfer Capacitance 130 220 300 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.5 1.1 1.7 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 28 35 42 nC
Qg(4.5V) Total Gate Charge 13 16 20 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 9 8.6 10 nC
Qgd Gate Drain Charge 2.8 4.6 6.4 nC
tD(on) Turn-On DelayTime 8.8 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 26 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 23 ns
tf Turn-Off Fall Time 6 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 8 10 12 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 12 15 18 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AON6418

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

150 100

10V 6V VDS=5V
120 80
5V
7V
90 60

ID(A)
ID (A)

4.5V

60 40
4V
125°C
30 20
25°C
VGS=3.5V
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)

15 1.8

Normalized On-Resistance
12 1.6
VGS=10V
ID=20A
VGS=4.5V
RDS(ON) (mΩ )

9 1.4
17
5
6 1.2 2
VGS=4.5V10
3 VGS=10V 1 ID=10A

0 0.8
0 5 1015 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Gate
Figure 4: On-Resistance vs. Junction Temperature
18
Voltage (Note E)
(Note E)

20 1.0E+02
ID=20A
1.0E+01
16
40
1.0E+00
125°C
RDS(ON) (mΩ )

12 1.0E-01
IS (A)

125°C

1.0E-02 25°C
8
1.0E-03
25°C
4
1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AON6418

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 3000
VDS=15V
ID=20A 2500
8
Ciss

Capacitance (pF)
2000
VGS (Volts)

6
1500
4
1000
Coss
2
500

Crss
0 0
0 5 10 15 20 25 30 35 40 0 5 10 15 20 25
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 10µs 160 TJ(Max)=150°C

RDS(ON) 10µs
TC=25°C
limited 100µs
Power (W)
ID (Amps)

10.0 120 17
DC 1ms 5
1.0 10ms 2
80
10
TJ(Max)=150°C
0.1 40
TC=25°C

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

RθJC=3.5°C/W 40
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON6418

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 50
TA=25°C
IAR (A) Peak Avalanche Current

TA=100°C 40

Power Dissipation (W)

30

20
TA=150°C
TA=125°C 10

10 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150
Time in avalanche, tA (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)

50 10000

TA=25°C
40 1000
Current rating ID(A)

Power (W)

30 17
100 5
2
20
10
10
10

1
0 0.00001 0.001 0.1 10 1000
0 25 50 75 100 125 150 0
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=64°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 AON6418

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 12 16 3
di/dt=800A/µs 14
25 10 di/dt=800A/µs 2.5
12
125ºC
20 8 125ºC 2
10
Qrr (nC)

Irm (A)

trr (ns)
Qrr trr
15 6 8 1.5

S
25ºC 25ºC

125ºC 6 125ºC
10 4 1
Irm S
4
25ºC
5 25ºC 2 0.5
2
0 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
IS (A) IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak Figure 18: Diode Reverse Recovery Time and
Current vs. Conduction Current Softness Factor vs. Conduction Current

20 10 15 2.5
Is=20A Is=20A
125ºC
8 12 2
15 125ºC
trr
25ºC 6 9 1.5
Qrr (nC)

Irm (A)

trr (ns)

10 25ºC

S
Qrr
4 6 1
125ºC 125º
5 S
25ºC 25ºC
2 3 0.5
Irm
0 0 0 0
0 200 400 600 800 1000 0 200 400 600 800 1000
µs)
di/dt (A/µ µs)
di/dt (A/µ
Figure 19: Diode Reverse Recovery Charge and Figure 20: Diode Reverse Recovery Time and
Peak Current vs. di/dt Softness Factor vs. di/dt

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 AON6418

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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