Ordering number : ENA0995 2SC6089

SANYO Semiconductors
DATA SHEET
NPN Triple Diffused Planar Silicon Transistor

2SC6089 Color TV Horizontal Deflection

Output Applications
Features
• High speed.
• High breakdown voltage (VCBO=1500V).
• Adoption of high reliability HVP process.
• Adoption of MBIT process.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 1500 V
Collector-to-Emitter Voltage VCEO 700 V
Emitter-to-Base Voltage VEBO 5 V
Collector Current IC 10 A
Collector Current (Pulse) ICP 25 A
3.0 W
Collector Dissipation PC
Tc=25°C 80 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
www.DataSheet4U.com min typ max
Collector Cutoff Current ICBO VCB=800V, IE=0A 10 µA
Collector Cutoff Current ICES VCE=1500V, RBE=0Ω 1.0 mA
Collector Sustain Voltage VCEO(sus) IC=100mA, IB=0A 700 V
Emitter Cutoff Current IEBO VEB=4V, IC=0A 1.0 mA
Continued on next page.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

D0507KC TI IM TC-00000003 No. A0995-1/4

 2SC6089
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Collector-to-Emitter Saturation Voltage VCE(sat) IC=7.2A, IB=1.44A 3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=7.2A, IB=1.44A 1.5 V
hFE1 VCE=5V, IC=1A 15
DC Current Gain
hFE2 VCE=5V, IC=8A 5 7
Fall Time tf IC=5A, IB1=1A, IB2=--2A 0.2 µs

Package Dimensions Switching Time Test Circuit

unit : mm (typ)
7504-001
IB1
PW=20µs
OUTPUT
3.4 D.C.≤1% IB2
16.0 5.6
3.1
INPUT VR RB
5.0

RL
8.0

40Ω
22.0

50Ω
21.0

+ +
0.8

100µF 470µF
4.0

2.8
VBE= --5V VCC=200V
2.0 2.1
20.4

0.7 0.9

1 2 3
5.45 1 : Base
2 : Collector
3.5

3 : Emitter
5.45
SANYO : TO-3PMLH

IC -- VCE IC -- VBE
12 12
VCE=5V
1.8A 1.6A 1.4A 1.2A 2.0A
10 10
Collecotr Current, IC -- A

Collector Current, IC -- A

8 1.0A 8
0.8A
www.DataSheet4U.com 0.6A
6 6
0.4A
°C

4 0.2A 4
120

C
25°
°C
Ta=

--40

2 2

IB=0A
0 0
0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-to-Emitter Voltage, VCE -- V IT03004 Base-to-Emitter Voltage, VBE -- V IT03005
hFE -- IC VCE(sat) -- IC
100 10
Ta=120°C VCE=5V 7 IC / IB=5
7
5
5 25°C
Saturation Voltage, VCE(sat) -- V

3
2
3 --40°C
DC Current Gain, hFE

2 1.0
7
5
Collector-to-Emitter

C
10 3 25°
7 2

5 2 0°C
0.1 Ta=1 C
3
7
5
--40°

2 3
2

1.0 0.01
0.1 2 3 5 7 1.0 2 3 5 7 10 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC -- A IT03006 Collector Current, IC -- A IT03007

No. A0995-2/4
 2SC6089
SW Time -- IC SW Time -- IB2
7 2
VCC=200V
5 tstg
10
IC=5A
IB1=1A
Switching Time, SW Time -- µs

Switching Time, SW Time -- µs

3 7
5 ts R load
2 tg
3

1.0 2

7
1.0
5 tf
7
5
3
3
2 VCC=200V
IC / IB1=5 tf 2

IB2 / IB1=2
0.1 0.1
R load
7 7
0.1 2 3 5 7 1.0 2 3 5 7 10 0.1 2 3 5 7 1.0 2 3 5 7
Collector Current, IC -- A IT13088 Base Current, IB2 -- A IT13089
Forward Bias A S O Reverse Bias A S O
5 5
3 ICP=25A L=500µH
3
2 IB2= --2A
IC=10A 2
Tc=25°C
10

10
7 Single pulse
Collector Current, IC -- A

0µ

Collector Current, IC -- A
30

5 10
s
0µ

3 7
s
1m

2 5
10m

1.0 3
s
DC

7 2
5
op
er

3
ati

2 1.0
on

7
0.1 5
7
5 3
3 2
2 Tc=25°C
0.01
Single pulse 0.1
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 100 2 3 5 7 1000 2 3
Collector-to-Emitter Voltage, VCE -- V IT13090 Collector-to-Emitter Voltage, VCE -- V IT13091
PC -- Ta PC -- Tc
3.5 90

80
3.0
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W

70
2.5
60

2.0
www.DataSheet4U.com No 50
he
at 40
1.5 sin
k
30
1.0
20

0.5
10

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT13092 Case Temperature, Tc -- °C IT13093

No. A0995-3/4
 2SC6089

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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
www.DataSheet4U.com
products described or contained herein.
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This catalog provides information as of December, 2007. Specifications and information herein are subject
to change without notice.

PS No. A0995-4/4