TSU - COSET

ENGINEERING DEPARTMENT
ELET 114 – 01
LAB-SHEET 7
SPRING 2019

ELET 114 - 01
LABORATORY SHEET 7

INSTRUCTOR: ENG. M. GAMBAZZA

LAB N. 262
WEDNESDAY 03:00 PM – 04:50 PM

STUDENTS NAME:

T-NUMBER:

OBJECTIVES OF THIS LABORATORY EXPERIENCE:

 EXPERIMENTING THE BJT OPERATING POINT

NEEDED MATERIALS

MULTIMETER
FUNCTION GENERATOR
TRAINING STATION
OSCILLOSCOPE
BJT (SUGGESTED: BJT 2N3904)
RESISTORS - WIRES

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TSU - COSET
ENGINEERING DEPARTMENT
ELET 114 - 01
LAB-SHEET 7
SPRING 2019

TASK 1:
 DOWNLOAD THE DATASHEET OF BJT 2N3904 FROM THE WEB
 IS THE TRANSISTOR NPN OR PNP? NPN BIPOLAR JUNCTION TRANSISTOR

IN STANDARD CONDITIONS:
 HOW MUCH IS IT THE MAXIMUM COLLECTOR CURRENT? IC = 200 mA
 HOW MUCH IS IT THE VCE_SAT (VCE WHEN THE BJT IS SATURATED)? VCE_SAT= 0.2V
 BUILD THE CIRCUIT IN FIGURE. LIST THE ACTUAL COMPONENTS THAT YOU WILL USE IN YOUR
LABORATORY CIRCUIT AND DRAW THE ACTUAL CIRCUIT ON THE RIGHT SPACE OF THE SHEET.
 HOW MUCH IS IT THE MAXIMUM COLLECTOR CURRENT FLOWING IN THE CIRCUIT? IS IT INSIDE THE
LIMITS ON THE TRANSISTOR’S DATASHEET?

SUGGESTED CIRCUIT:

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TSU - COSET
ENGINEERING DEPARTMENT
ELET 114 - 01
LAB-SHEET 7
SPRING 2019

ACCORDING TO ABOVE CIRCUIT CONTAIN TWO LOOPS. ONE INPUT LOOP & SECONF IS OUTPUT LOOP.
THERE EQUATIONS ARE GIVEN BELOW

𝑉𝐵𝐸 = 𝑉𝐼𝑁 − 𝐼𝐵 𝑅𝐵
𝑉𝐶𝐸 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶
SIMULATION RESULTS

 WHAT IS THE VALUE OF VBB ABLE TO PRODUCE IB = 300 ΜILLIAMPERE?

(CALCULATE VRB AND CONSIDER IB = VRB/RB).

AT 𝑉𝐼𝑁 = 0𝑉

𝑉𝑅𝐵
𝐼𝐵 =
𝑅𝐵

𝑉𝑅𝐵 = 𝐼𝐵 × 𝑅𝐵 = 300𝑚𝐴 × 10𝑘 = 3𝑘𝑉

SO, FOR 300-MA CURRENT VALUE OF VBB SHOULD BE AROUND 3KV ETC.

 WHAT IS THE OPERATING POINT OF THE TRANSISTOR WHEN IB = 300 µA?

𝑰𝑩 = 𝟑𝟎𝟎𝝁𝑨
FOR CURRENT GAIN ASSUME β=60 THAN

𝐼𝐶 = 𝛽𝐼𝐵
𝐼𝐶 = 60× 300𝜇𝐴 = 18𝑚𝐴
𝑉𝐶𝐸 = 𝑉𝐶𝐶 − 𝐼𝐶 × 𝑅𝐶
𝑉𝐶𝐸 = 10𝑉 − 18𝑚𝐴 × 220Ω
𝑽𝑪𝑬 = 𝟔. 𝟎𝟒𝑽
 WHAT IS THE OPERATING POINT OF THE TRANSISTOR WHEN VBB = 5 V?

𝑉𝑅𝐵 5𝑉
𝐼𝐵 = = = 0.5𝑚𝐴
𝑅𝐵 10𝑘

𝐼𝐶 = 60 × 0.5𝑚𝐴 = 30𝑚𝐴
𝑽𝑪𝑬 = 𝑽𝑪𝑪 − 𝑰𝑪 𝑹𝑪 = 𝟏𝟎 − 𝟑𝟎𝒎𝑨 × 𝟐𝟐𝟎 = 𝟑. 𝟒𝑽

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TSU - COSET
ENGINEERING DEPARTMENT
ELET 114 - 01
LAB-SHEET 7
SPRING 2019

CONCLUSION
BY PERFORMING THIS EXPERIMENT WE OBSERVED COMMON EMITTER TRANSISTOR
CHACTERISTIC.WE OBSERVED THAT TRANSISTOR HAS FOUR REGION LIKE SATURATION REGION,
FORWARD/ REVERSE ACTIVE REGION, & CUT OFF REGION. WE CALCULATE ALL UNKNOWN VALUES
& SUCCESSFULLY GET THAT OUR CALCULATED & DATASHEET VALUES ARE NEAR & WITHIN GIVEN
RANGES ETC.

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TSU - COSET
ENGINEERING DEPARTMENT
ELET 114 - 01
LAB-SHEET 7
SPRING 2019