Académique Documents
Professionnel Documents
Culture Documents
Literature
Bibliography
1. Enz, Christian, Krummenacher F., Vittoz E., "An analytical MOS transistor model valid in all
regions of operation and dedicated to low-voltage and low-current applications",Analog
Integrated Circuits and Signal Processing, Vol. 8, no. 1, pp. 83-114, Jul. 1995
2. R. R. Harrison and C. Charles, “A low-power low-noise CMOS amplifier for neural recording
applications,” IEEE Journal of Solid-State Circuits, vol. 38, no. 6, pp. 958 – 965, Jun. 2003.
3. Y. Tsividis and C. McAndrew, "Operation and Modeling of the MOS Transistor, Third Edtion",
(Oxford University Press) 2012.
4. J. Chang, A. A. Abidi, and C. R. Viswanathan, “Flicker noise in CMOS transistors from
subthreshold to strong inversion at various temperatures,” IEEE Transactions on Electron
Devices, vol. 41, no. 11, pp. 1965–1971, Nov. 1994.
5. Y. Nemirovsky, I. Brouk, and C. G. Jakobson, “1/f noise in CMOS transistors for analog
applications,” IEEE Transactions on Electron Devices, vol. 48, no. 5, pp. 921–927, May 2001.
6. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, “A unified model for the flicker noise in metal-
oxide-semiconductor field-effect transistors,” IEEE Transactions on Electron Devices, vol. 37, no.
3, pp. 654–665, Mar. 1990.
Useful Constants/Expressions
Resitor Noise:
Voltage:
Current:
Capacitor Noise:
C in fF
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C in pf
Thermal voltage:
Useful physical constants:
electron mass(free):
Effective mass in silicon:
Device Models
Estimating transistors region of operation using EKV Model
[2]
Inversion Characteristic Current:
(1)
where, , and
(2)
(3)
(4)
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where,
(5)
gm/Id 28 22 19 11 8 6
Capacitance
MOS Capacitance in Subthreshold Region
In subthreshold region the since there is no channel formed, the gate capacitance w.r.t. bulk is
the series capacitance of and :
(6)
(7)
Noise
White Noise
A general expression for white noise in the drain current can be expressed as [3]
(8)
(9)
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As expected, in linear region the white noise is that of the channel resistance and it's only
proportional to in saturation mode. The constant is typically 1 for small VDS and much
larger for larger VDS because of hot electron effect.
(10)
where,
(11)
NOTE: is the same as in Eq.(2). Observe, the weak inversion white noise is similar to BJT's
shot noise.
Flicker Noise
At present, there are two main theories for the physical origin of the flicker noise: first theory
attributes the origin of flicker noise to random fluctuation of the number of carriers in the
channel, due to fluctuations in the surface potential. The second theory attributes flicker noise to
mobility fluctuations, due to carrier interactions with lattice fluctuations.
The equivalent gate noise based on channel carrier fluctuation can be expressed as [3]:
(12)
where, for n-channel devices, the exponent is between 0.7 and 1.2, and is independent of
bias and dependent on process parameters.
The equivalent gate noise based on channel mobility fluctuation can be expressed as [3]:
(13)
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A unified theory suggests it is due to both the effects that is correlated to each other. An
approximated value is expressed as:
(14)
Although the above results have been recommended for all region of operation, simulation
results from UMC 180nm shows that's not the case.
Both the effects can be present simultaneously and correlated in a given device.
Flicker noise in n-channel is often attributed to carrier fluctuation and p-channel to mobility
fluctuation.
For p-channel it is found that for strong inversion increases approximately linearly
with .
Some reports suggest increases as is decreased in weak inversion.
n-channel are generally found to be significantly noisier than p-channel.
(15)
(16)
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