BSS138N

SIPMOS® Small-Signal-Transistor
Product Summary
Features
V DS 60 V
• N-channel
R DS(on),max 3.5 Ω
• Enhancement mode
ID 0.23 A
• Logic level

• dv /dt rated

• Pb-free lead-plating; RoHS compliant

PG-SOT-23
• Qualified according to AEC Q101

Type Package Tape and Reel Marking

BSS138N PG-SOT-23 L6327: 3000 SKs

BSS138N PG-SOT-23 L6433: 10000 SKs

Parameter Symbol Conditions Value Unit

Continuous drain current ID T A=25 °C 0.23 A

T A=70 °C 0.18

Pulsed drain current I D,pulse T A=25 °C 0.92

I D=0.23 A, V DS=48 V,
Reverse diode dv /dt dv /dt di /dt =200 A/µs, 6 kV/µs
T j,max=150 °C

Gate source voltage V GS ±20 V

ESD sensitivity MIL-STD 883 (HBM) Class 1 (<1999V)

ESD sensitivity JESD22-A114 (HBM) Class 0 (<250V)

Power dissipation P tot T A=25 °C 0.36 W

Operating and storage temperature T j, T stg -55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Rev. 2.84 page 1 2011-06-07

 BSS138N

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance,
R thJA - - 350 K/W
junction - minimal footprint

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D=250 µA 60 - - V

Gate threshold voltage V GS(th) V GS=V DS, I D=26 µA 0.6 1.0 1.4

V DS=60 V,
Drain-source leakage current I D (off) - - 0.1 µA
V GS=0 V, T j=25 °C

V DS=60 V,
- - 5
V GS=0 V, T j=150 °C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 10 nA

Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=0.03 A - 3.3 4.0 Ω

V GS=4.5 V, I D=0.19 A - 3.5 6.0

V GS=10 V, I D=0.23 A - 2.2 3.5

|V DS|>2|I D|R DS(on)max,

Transconductance g fs 0.1 0.2 - S
I D=0.18 A

Rev. 2.84 page 2 2011-06-07

 BSS138N

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss - 32 41 pF

V GS=0 V, V DS=25 V,
Output capacitance C oss - 7.2 9.5
f =1 MHz
Reverse transfer capacitance Crss - 2.8 3.8

Turn-on delay time t d(on) - 2.3 3.5 ns

Rise time tr V DD=30 V, V GS=10 V, - 3.0 4.5

Turn-off delay time t d(off) I D=0.23 A, R G=6 Ω - 6.7 10

Fall time tf - 8.2 12.3

Gate Charge Characteristics

Gate to source charge Q gs - 0.10 0.14 nC

Gate to drain charge Q gd V DD=48 V, I D=0.23 A, - 0.3 0.4

V GS=0 to 10 V
Gate charge total Qg - 1.0 1.4

Gate plateau voltage V plateau - 3.3 - V

Reverse Diode

Diode continous forward current IS - - 0.23 A

T A=25 °C
Diode pulse current I S,pulse - - 0.92

V GS=0 V, I F=0.23 A,
Diode forward voltage V SD - 0.83 1.2 V
T j=25 °C

Reverse recovery time t rr V R=30 V, I F=0.23 A, - 9.1 14.5 ns

di F/dt =100 A/µs
Reverse recovery charge Q rr - 3.3 5 nC

Rev. 2.84 page 3 2011-06-07

 BSS138N
1 Power dissipation 2 Drain current
P tot=f(T A) I D=f(T A); V GS≥10 V

0.4 0.25

0.2
0.3

0.15
P tot [W]

I D [A]
0.2

0.1

0.1
0.05

0 0
0 40 80 120 160 0 40 80 120 160
T A [°C] T A [°C]

3 Safe operating area 4 Max. transient thermal impedance

I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p)
parameter: t p parameter: D =t p/T

101 103

limited by on-state
resistance
10 µs
0.5
100

100 µs 102
0.2
Z thJA [K/W]

1 ms
0.1
I D [A]

10-1
10 ms 0.05

0.02
100 ms 101
0.01
10-2
DC

single pulse

10-3 100
1 10 100 10-5 10-4 10-3 10-2 10-1 100 101
V DS [V] t p [s]

Rev. 2.84 page 4 2011-06-07

 BSS138N
5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C
parameter: V GS parameter: V GS

0.6 10
2.9 V 3.2 V 4V
V 10 V7 V5 V 4.5 3.5 V

0.5
8
V4

0.4
6

R DS(on) [Ω]
I D [A]

V 3.5
0.3
4.5 V

V 3.2 4
5V
0.2
V 2.9 7V

10 V
2
0.1

0 0
0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5
V DS [V] I D [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C

0.6 0.4

0.35
0.5

0.3

0.4
0.25
g fs [S]
I D [A]

0.3 0.2

0.15
0.2

0.1

0.1
0.05

0 0
0 1 2 3 4 5 0.00 0.10 0.20 0.30 0.40
V GS [V] I D [A]

Rev. 2.84 page 5 2011-06-07

 BSS138N
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=0.23 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=26 µA
parameter: I D

8 2

1.6
6
%98

1.2
R DS(on) [Ω]

V GS(th) [V]
4 %98 typ

0.8

typ %2
2
0.4

0 0
-60 -20 20 60 100 140 -60 -20 20 60 100 140
T j [°C] T j [°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD)
parameter: T j

102 100
150 °C, 98%

25 °C
25 °C, 98%

150 °C
Ciss

10-1
C [pF]

I F [A]

101

Coss

10-2

Crss

100 10-3
0 10 20 30 0 0.4 0.8 1.2 1.6 2 2.4
V DS [V] V SD [V]

Rev. 2.84 page 6 2011-06-07

 BSS138N
13 Typ. gate charge 14 Drain-source breakdown voltage
V GS=f(Q gate); I D=0.23 A pulsed V BR(DSS)=f(T j); I D=250 µA
parameter: V DD

12 70

30 V
10

65

V BR(DSS) [V]
12 V 48 V
V GS [V]

6 60

55

0 50
0 0.2 0.4 0.6 0.8 1 -60 -20 20 60 100 140 180
Q gate [nC] T j [°C]

Rev. 2.84 page 7 2011-06-07

 BSS138N

Package Outline:

Footprint: Packaging:

Dimensions in mm

Rev. 2.84 page 8 2011-06-07

 BSS138N

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Rev. 2.84 page 9 2011-06-07

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