2SD313

NPN Silicon Epitaxial Power Transistor

P b Lead(Pb)-Free
COLLECTOR
2
Features: 1
* DC Current Gain hFE = 40-320 @IC = 1.0A BASE 2
1 3
* Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A 1. BASE
* Complememtary to NPN 2SB507 2. COLLECTOR
3 3. EMITTER
EMITTER TO-220

ABSOLUTE MAXIMUM RATINGS (TA=25ºC)

Rating Symbol Value Unit
Collector to Base Voltage VCBO 60 V
Collector to Emitter Voltage VCEO 60 V

Collector to Base Voltage VEBO 5.0 V

Collector Current IC 3.0 A

Total Device Disspation

TA=25°C PD 1.75
W
TC=25°C 30
Derate above 25°C 0.24 W/˚C
Junction Temperature TJ +150 ˚C
Storage Temperature Tstg -55 to +150 ˚C

ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Max Unit
Collector-Base Breakdown Voltage
BVCBO 60 - - V
IC=100µA, I E =0
Collector-Emitter Breakdown Voltage BVCEO 60 - - V
IC=1mA, I B =0
Emitter-Base Breakdown Voltage
BVEBO 5.0 - - V
IE=100µA, I C =0
Collector Cut-Off Current - - µA
ICBO 100
VCB=60V, I E=0
Emitter-Cut-Off Current
ICEO - - 1.0 mA
VEB=60V,IE=0
Emitter-Cut-Off Current
IEBO - - 100 µA
VEB=4.0V, IC =0

WEITRON 1/4 06-Feb-07

http://www.weitron.com.tw
 2SD313
ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain
VCE= 2V, IC= 1A hFE1 40 - 320 -
VCE= 2V, IC= 0.1A hFE2 40 - -
Collector-Emitter Saturation Voltage
VCE(sat) - - 1.0 V
IC= 2A, IB = 200mA

Base-Emitter On Voltage
VBE - - 1.5 V
VCE= 2V, I C = 1A
Transition Frequency
fT - 8 - MHz
VCE= 5V, IC= 500mA
Transition Frequency Cob - 65 - pF
VCB= 10V, I E= 0 , f=1MHz

CLASSIFICATION OF hFE(1)

Rank C D E F

Range 40-80 60-120 100-200 160-320

WEITRON 2/4 06-Feb-07

http://www.weitron.com.tw
 2SD313

1000 10000

Sa tu ration Vol ta ge, VCE (S AT) (mV)

IC=10IB

100 1000
h FE

10 100

1 10
10 100 1000 10000 10 100 1000 10000
Collector Current (mA) Collector Current (mA)
Fig.1 DC Current Gain Fig.2 Saturation Voltage vs Collector Current

10000 10
I C=10IB
Collecto r Current (A)
VBE (S AT) (mA)

1000 1

100 0.1
10 100 1000 10000 1 10 100
Collector Current (mA) Collector to Emitter Voltage (V)
Fig.3 VBE(sat) vs IC Fig.4 SOA

10000
VCE=2V
VB E(ON) (mV)

1000

100
10 100 1000 10000
Collector Current (mA)
Fig.5 VBE(on) vs IC

WEITRON
3/4 06-Feb-07
http://www.weitron.com.tw
 2SD313

TO-220 Outline Dimensions unit:mm

D
A TO-220
C1 Dim Min Max
∅ A 4.47 4.67
F
A1 2.52 2.82
B 0.71 0.91
H B1 1.37
1.17
C 0.31 0.53
E1
E C1 1.17 1.37
D 10.01 10.31
E 8.50 8.90
B1 L1 A1 E1 12.06 12.446
B G 2.54 TYP
G1 4.98 5.18
L

F 2.59 2.89
H 0.00 0.30
G C L 13.4 13.8
G1 L1 3.56 3.96
Φ 3.73 3.93

WEITRON 4/4 06-Feb-07

http://www.weitron.com.tw