2n6043g 2n6042g

PNP - 2N6040, 2N6042,
NPN - 2N6043, 2N6045

2N6043 and 2N6045 are Preferred Devices
Plastic Medium-Power
Complementary Silicon
Transistors
Plastic medium-power complementary silicon transistors are
designed for general-purpose amplifier and low-speed switching
applications. DARLINGTON, 8 AMPERES
COMPLEMENTARY SILICON
Features
POWER TRANSISTORS
•High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc
60 - 100 VOLTS, 75 WATTS
•Collector-Emitter Sustaining Voltage - @ 100 mAdc -
VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043
= 100 Vdc (Min) - 2N6042, 2N6045
•Low Collector-Emitter Saturation Voltage -
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6043,44
= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045
•Monolithic Construction with Built-In Base-Emitter Shunt Resistors
•Epoxy Meets UL 94 V-0 @ 0.125 in
•ESD Ratings: Human Body Model, 3B > 8000 V TO-220AB
CASE 221A-09
Machine Model, C > 400 V
STYLE 1
•Pb-Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
MAXIMUM RATINGS (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Rating Symbol Value Unit MARKING DIAGRAM
ÎÎÎ
ÎÎÎÎÎÎÎ
Collector-Emitter Voltage 2N6040 VCEO 60 Vdc
ÎÎÎ
ÎÎÎÎÎÎÎ
2N6043
2N6042 100
ÎÎÎ
ÎÎÎÎÎÎÎ
2N6045
ÎÎÎ
ÎÎÎÎÎÎÎ
Collector-Base Voltage 2N6040 VCB 60 Vdc
2N6043
ÎÎÎ
ÎÎÎÎÎÎÎ
2N6042 100 2N604xG
ÎÎÎ
ÎÎÎÎÎÎÎ
2N6045 AYWW
ÎÎÎ
ÎÎÎÎÎÎÎ
Emitter-Base Voltage VEB 5.0 Vdc
ÎÎÎ
ÎÎÎÎÎÎÎ
Collector Current Continuous IC 8.0 Adc
Peak 16
ÎÎÎ
Base Current
ÎÎÎÎÎÎÎ IB 120 mAdc
ÎÎÎ
ÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25°C PD 75 W 2N604x = Device Code
ÎÎÎ
ÎÎÎÎÎÎÎ
Derate above 25°C 0.60 W/°C x = 0, 2, 3, or 5
A = Assembly Location
ÎÎÎ
ÎÎÎÎÎÎÎ
Operating and Storage Junction TJ, Tstg –65 to °C Y = Year
Temperature Range +150 WW = Work Week
Stresses exceeding Maximum Ratings may damage the device. Maximum G = Pb-Free Package
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION
1. Indicates JEDEC Registered Data. See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb-Free strategy and soldering details, please Preferred devices are recommended choices for future use
download the ON Semiconductor Soldering and Mounting Techniques and best overall value.
Reference Manual, SOLDERRM/D.
1
PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction-to-Case
Characteristic Symbol
qJC
Max
1.67
Unit
°C/W
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction-to-Ambient
qJA 57 °C/W
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
*ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Characteristic Symbol Min Max Unit
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎ ÎÎÎ
ÎÎÎ
Collector-Emitter Sustaining Voltage VCEO(sus) Vdc
(IC = 100 mAdc, IB = 0) 2N6040, 2N6043
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
60 -
2N6042, 2N6045 100 -
ÎÎÎÎ
Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
(VCE = 60 Vdc, IB = 0)
(VCE = 100 Vdc, IB = 0)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
2N6040, 2N6043
2N6042, 2N6045
ICEO
- 20
mA
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
- 20
mA
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Collector Cutoff Current ICEX
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N6040, 2N6043 - 20
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc) 2N6042, 2N6045 - 20
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) 2N6040, 2N6043 200
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
-
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) 2N6041, 2N6044 - 200
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) 2N6042, 2N6045
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
- 200
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Collector Cutoff Current ICBO mA
(VCB = 60 Vdc, IE = 0) 2N6040, 2N6043 - 20
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
(VCB = 100 Vdc, IE = 0) 2N6042, 2N6045 - 20
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO - 2.0 mAdc
ON CHARACTERISTICS
DC Current Gain ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ hFE -
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
(IC = 4.0 Adc, VCE = 4.0 Vdc) 2N6040, 2N6043, 1000 20.000
(IC = 3.0 Adc, VCE = 4.0 Vdc) 2N6042, 2N6045 1000 20,000
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
(IC = 8.0 Adc, VCE = 4.0 Vdc) All Types 100 -
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Collector-Emitter Saturation Voltage VCE(sat) Vdc
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
(IC = 4.0 Adc, IB = 16 mAdc) 2N6040, 2N6043, - 2.0
(IC = 3.0 Adc, IB = 12 mAdc) 2N6042, 2N6045 - 2.0
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
(IC = 8.0 Adc, IB = 80 Adc) All Types - 4.0
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Base-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) VBE(sat) - 4.5 Vdc
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) - 2.8 Vdc
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) |hfe| 4.0 -
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Output Capacitance 2N6040/2N6042 Cob - 300 pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6043/2N6045 - 200
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
*Indicates JEDEC Registered Data.
hfe 300 - -
2
PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

3.0 3.0
TJ = 25°C TJ = 25°C
2.6 2.6
IC = 2.0 A 4.0 A 6.0 A IC = 2.0 A 4.0 A 6.0 A
2.2 2.2
1.8 1.8
1.4 1.4
1.0 1.0
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
3.0 3.0
TJ = 25°C TJ = 25°C
2.5 2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.0 2.0
1.5 VBE @ VCE = 4.0 V 1.5 VBE(sat) @ IC/IB = 250
VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V

1.0 1.0
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.010 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
ORDERING INFORMATION
Device Package Shipping
2N6040 TO-220AB
2N6040G TO-220AB
(Pb-Free)
2N6042 TO-220AB
2N6042G TO-220AB
(Pb-Free)
50 Units / Rail
2N6043 TO-220AB
2N6043G TO-220AB
(Pb-Free)
2N6045 TO-220AB
2N6045G TO-220AB
(Pb-Free)
5
PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045
PACKAGE DIMENSIONS
TO-220
CASE 221A-09
ISSUE AE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
-T- PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T ALLOWED.
S
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
1 2 3 U D 0.025 0.035 0.64 0.88
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
K J 0.014 0.025 0.36 0.64
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
D Z --- 0.080 --- 2.04
N

2n6043g 2n6042g

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2n6043g 2n6042g

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Droits d'auteur :

Formats disponibles

PNP - 2N6040, 2N6042,

NPN - 2N6043, 2N6045

ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Rating Symbol Value Unit MARKING DIAGRAM

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.5 VBE @ VCE = 4.0 V 1.5 VBE(sat) @ IC/IB = 250

VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V

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