Paper 2012 & 2013

QUESTION 1

RECOGNIZING BJT TIP

By the direction of arrow of emitter.
It means bipolar junction transistor.
DOES BARRIER POTENTIAL MAKE THE DIODE USED AS A VOLTAGE SOURCE?
No. because 0.7 is consumed by the diode and can’t be brought into working.
WHY A SERIES RESITOR IS NECESSARY WHEN THE DIODE IS FORWARD BIASED?
Resistance in series is used along with diode to control the flow of current or limit the current flow
HALL EFFFECT AND RECOGNIZING P-TYPE AND N-TYPE
DIODE EQUIVALENT CIRCUITS WITH FOUR COLUMNS WITH TYPE, CONDITION, MODEL
ANDCHARACTERICTRICS
Diagram.
DAIGRAM OF WHY ELECTRON CURRENT AND HOLE CURRENT ARE SAME IN MAGNITUDE BUT
DIFFERENTT IN DIRECTION

HOW CAN WE SHIFT THE ZENER REGION IN AN ORDINARY SEMICONDUCTOR DIODE

There will be shifting in zener region and the zener voltage will shift outward or away from the origin by
increasing the temperature
Impurity in any diode or PN junction or zener diode can also cause the shifting of the zener region
Forward voltage will also shift toward zener region in zener diode

QUESTION 2

HOW A VALENCE ELECTRON BECOMES FREE ELECTRON

By acquiring energy from the external source

IS THERE ANY DIFFERENCE BETRWEREN ENERGY BAND OR SHELL?

Yes.
Orbit followed by electrons around an atom's nucleus. The closest shell to the nucleus is called the
"1 shell" (also called
In solid-state physics, a band gap, also called an energy gap or band gap, is an energy range in
a solid where no electron states can exist. In graphs of the electronic band structure of solids, the band
gap generally refers to the energy difference (in electron volts) between the top of the valence band and
the bottom of the conduction band in insulators and semiconductors.
These discrete values are called energy levels

WHAT IS THE MAIN IDEA PRESENTED IN BOHRS ATOMIC MODEL

The atom is viewed as having a planetary shape type structure with electrons orbiting at various
distances around the central nucleus
In bohr model the main idea was that “electrons do not lose energy when orbiting around a nucleus in a
shell. These shells are called energy levels. They have specific energies associated with them. A electron
must acquire sufficient energy to jump into higher energy level

WHAT IS THE NAME OF THE PROCESS BY WHICH AN ELECTRON LOSSEDS VALENCE LECTRON
Ionization
GIVE THE NAME OF ANY TWO SOURCES FROM WHICH ATOM OBSERVE ENERGY

WHY FORBIDDEN GAP IS CALLED FORBIDDEN

Probability of electron being found in this region should be zero

WHY GOOD INSULATORS ARE CPOMPOUND

Covalent bonds are mostly found in insulators. Thus covalent compounds tend to be good insulators.
This is because of the electron of the molecules are locked in place and resistant to movement; this
tendency insulates the electricity flowing along around them

QUESTION 3
WHETHER THE IDEAL DIODE WORKS AS SIMPLE CLOSED OR OPEN SWITCH
Both. Depends on the type of biasing
WHAT IS THE FUNCTION OF LARGE INTERNAL RESISTANCE IN THE COMPLETE MODEL
Path to let the reverse current to flow through large internal resistance
WHY DO WE USE KVL IN THE PRACTICAL MODEL
Vbias-vf-vrl=0. This equation helps us find the forward current and define other parameters involved in
the practical model.
IN THE DIODE VI CURVE, BELOW THE KNEE, WHETHER THE RESISTANCE IS GREATER NAD LOWEST AND
WHY?
Below the knee the resistance is surely too high as there is no current flowing.
IN THE COMPLETE MODEL CAN WE CALCULATE REVERSE VOLTAGE OR CURRENT
Mostly in numerical ir is given however we can calculate the reverse voltage using KVL.
CALCULATE THE STANDARD VALUE OF THE JUNCTION DIODE THERMAL VOLTAGE
Calculate this at 25 c or 27 c
WHAT IS THE DIFFERENCEW BETWEEN THE ORDINARY SEMI CONDUCTOR DIODE AND DIODE VALVE

QUESTION 4
BY USING EQUATION ONLY EXPLAIN HOW THE DC CLAMPER GIVE 2VP?
V (not)-v-v=0 v (not)=2v
WHAT IS THE IMPORTANCE OF THE EQUATION E=VD+IDR?
Load line analysis is done with the help of this equation.
WHAT IS THE IMPORTANCE OF QUISCENT POINT?
Quiescent point t shows the optimum level of dc current (Id) and voltage (Vd)
WHY THE FREE HAND SKETCHNING OF DIODE CURVE DONOT CREATE PROBLEMS IN THE LOAD LINE
FIGURE

DEFINE JDCE
It gives the general characteristic of semiconductors.
Junction diode current equation.it is also called Shockley’s equation.
WHAT IS THE DIFFERENCE BEETWEEN JDCE AND SHOCKLEYS EQUATION
According to our lecture. There is no difference
WHAT ARE THE TWO CONDITION FOR IDEAL MODEL IN DEC
i. Rnetwork>>Ravg ii. Enetwork>>Vk
QUESTION 5
BRIEWFLY EXPLAIN TRAFFIC SIGNAL PROJECT
EXPLAIN WATER LEVEL DETECTOR PROJECT
BRIEFLY EXPLAIN ANY PROJECT IN WHICH SPEAKERS ARE USED
THE TERM “VP (in)-0.3” IS ASSOCIATED WITH WHICH BLOCK OF POWER SUPPLY
Rectifier block Filter block
WHAT DO YOU UNDERSTAND BY RIPPLE FACTOR
The ripple factor is simply the ratio of Vrms(root mean square value) and Vdc(value of voltage in dc
current) and its formula is Vrms/Vdc fo half wave rectifier and ((Vrms^2/Vdc^2)-1)^1/2 for full wave
rectifier. The amplitude variation present in a DC power supply due to insufficient filtering. A large
variation can damage a DC surveillance camera. The most common meaning of ripple in electrical
science is the small unwanted residual periodic variation of the direct current (dc) output of a power
supply which has been derived from an alternating current(ac) source. This ripple is due to incomplete
suppression of the alternating waveform within the power supply.

WHAT ARE THE TWO METHODS BY WHICH THE PEAK OF THE RECTIFIED VOLTAGE IS INCREASED
DC to DC converter, voltage doubler
WHETHER THE CHARGING OR THE DICHARGING OF THE CAPACITROR TAKES MORE TIME AND WHAT
HOW DO YOU RELATE THESE TWO
The time taken by capacitor to discharge depends on the time constant of the circuit
T=RC workbook page; 42
QUESTION 6
WHAT IS THE EFFECT OF REVERSE BIAS ON DEPLETION REGION
It widens.
WHAT IS CALLED THE GIVE UP AMOUNT ODF ENERGY BY ELECTRON WHEN THEY CROSS THE
DEPLETION REGION
Barrier potentials. The amount of energy required to produce full conduction across the PN junction in
forward bias
WHETHER MORE OR NOT ANY ELECTRON MOVES THROUGH THE JUNCTION AT EQUILLIBRIUM.
No static current i.e. electron moves across the junction in equilibrium unless any bias is applied.
WHAT ARE THE TWO REQUIREMENTS OF FORWARD BIAS THE DIODE
Positive should be connected to the anode of the diode i.e. p-material while the negative terminal of the
battery should be connected to the cathode i.e. n-material.
WHY HIGH REVERSE CURRENT CAN DAMAGE THE DIODE
Due to excessive number of electron flowing through negligible resistance, the diode e cannot sustain
this greater quantity of current and damages.
WHAT IS THE TYPICAL VBR FOR SI
50V or larger
IN DIODE THE ARROW REPRESENTS WHETHER THE CONVENTIONAL CVURREWT5N OR THE ELECTRON
CURRENT
Conventional current

QUESTION 7
ASSUMING PRACTICAL MODEL WITHOUT SOLVING SKETCH THE CIRCUIT AND DETERMINE THE
VOLTAGE ACCROSS EACH OF THE DIODE INCLUDING POLARITY
CATHODE IS CONNEDTED TO THE NEGATICVE TERMINAL OF THE BATTERY OF 100 VOLT WHILE THE
POSITIVE TRERMINAL OF THE BATTERY IS CONNEDCTED TO THE 5 OHM RESISTORS
POSITIVE TERMINAL OF THE 30 VOLT BATTETRY IS CONNECTERD TO THE ANODE THROUG H A 14
BOHM RESISTOR
CATHODE IS CONNECTED TO THE 10 V BATTERY THROUGH

THE DC CURRENT GAIN OF THE SILICON TRANSOISTOR IS 150, VCC IS 10 VOLTS RC IS 100 VOLTS RB IS
10 K AND VBB IS 5 VOLTS. FIND THE COLLECTOR TO BASE VOLTAGE. ALSO FIND IE.THE IB OF A
TRANSISTOR IS 50 MICRO AMPERE AND IC IS 3.65 mA. DETERMINE THE DC CURRENT GAIN
Beta is called the current gain. I.e. collector to base current.
WHAT ARE THE MAIN TYPE OF BJT
NPN and PNP

LECTURE QUESTIONS
1. EXPLAIN WITH THE HELP OF DAIGRAM WHY SOILICON IS MORE WIDELY USED IN
ELECTRONIC
Silicon has atomic weight lower than the rest of the semiconductors and is more stability as
compared to others
2. HOW DOES A DIODE WORK
It is a PN junction consisting of p=type and n-type material. Some bias is provided to make it
work like a switch which is closed when forward biased () and open when reversed biased ()
3. DUE TO THIS BARRIER POTENTIAL, CAN A DIODE BE USED AS A VOLTAGE SOURCE
No. because 0.7 is consumed by the diode and can’t be brought into working.
4. KEEPING THE SEMICONDUCTOR DIODE CHARACTERISTIC IN MIND EXPLAIN WHETHER THE
RESISTANCE OF DIODE IS STATIC OR DYNAMIC
The resistance is dynamic because the curve shows variation n is non linear
5. RESISTANCE IN SEWRIES
Resistance in series is used along with diode to control the flow of current or limit the current
flow
6. WHAT WOULD BE THE EEFETC ON SEMICONDUCTOR DIODE CURVE IF WE INCREASE THE
TEMPERATUR BY THE AMOINT CHANGE IN TEMPERATURE? USE ANOTHER GRAPH ON THE
DIODE CURVE
The location of the barrier potential changes and comes earlier.in reverse biased. Breakdown
comes soon and reverse current increases
7. WHICH OF THE FOLLOWING MODEL IS MORE USEFUL IN INDUSTRIES AND FOR THE USERS
IDEAL MODEL
PRACTICAL MODEL
Practical as the ideal can never be manufactured
8. WHICH OF THE MODEL IS MORE USEFUL IN ELCTRONICS CIRCUIT AND WHY? WHAT ARE
THE ADVANTAGES
PRACTICAL MODEL
COMPLETE MODEL
Practical has advantage over complete as it is economical use
Complete is more accurate than practical as it has maximum number of components but it is not
economical
9. CAN WE CHANGE THE LOCATION OF BARRIER POTENTIAL
By increasing temperature and increasing the level of impurity
10. DRAW THE CIRCUIT POF RECTIFICATION TO GET THE OUTPUT WAVE FORM BELOW THE X
AXIS
Draw the circuit half wave rectification or full wave rectification. Make sure the bridge does not
give output below the x axis
11. EXPALIN WITH THE HELP OF HALL EFECT WHICH TYPE WE USE AS THE SEMI CONDUCTOR
MATERIAL
12. DESIGN A BRIDGE RECTIFICATION WHICH GIVES THE OUTPUT BELOW THEW X AXIS IF
POSSIBLE
Not possible

13. WHICH OF THE RECTIFICATION TECHNIQUE IS MORE USEFUL

HWR FWR
FWR is the most useful technique as give output double.it gives output double because it uses
the entire cycle of the applied ac cycle. The current capability of the FWR is higher than that of
HWR.

14. WHICH OF THE FOLLOWING TEWCHNIQUE IS MORE USEFUL

CTTFWR BRIDGE
PIV is about half the value for the full wave rectifier with a center tapped transformer. This is
one of the advantage of the bridge rectifier
15. SELECT CLIPPER HAVING SAME OUTPUT.
Parallel positive and series positive

16. FOR A CETRTAIN ELECTRON PROJECT A SPECIFIC OUTPUT INS REQUIRED WHICH IS GIVEN
BELOW .WHICH OF THE FOLLOWING CIRCUIT IS MORE APPLICABLE IN GENERAL
PARALLEL POSITIVE AND NEGATIVE CLIPPER
PARALLEL POSITIVE AND PARALLLEL NEGATIVE CLIPPER SEPERATELY
This output comes when both the parallel positive and negative clipper are used in one circuit

17. DESIGN A CLAMPEWR TO GET THE OUTPUT ABOVE THE X AXIS

Possible as it is designed in workbook page: 67.

18. CAN WE CHANGE THE LOCATION OOF A ZENER REGION

There will be shifting in zener region and the zener voltage will shift outward or away from the
origin by increasing the temperature
Impurity in any diode or PN junction or zener diode can also cause the shifting of the zener
region
Forward voltage will also shift toward zener region in zener diode

19. WHICH OF THE FOLLOWING RECTIFICATION TECHNIQUE IS MORE USEFUL IN DESIGNING A

FILTER
FWR
HWR
Full wave is more refined and more useful. RC time constant is less if full wave rectification.
Thus smoother output

20. WHICH OF THE COMPONENT OF THE POWER SUPPLY IS MOST IMPORATANT AND WHICH IS
THE LEAST JIMPORATANT
 Rectifier is the most important and regulator is the least important
21. WHICH OF THE MODELS ARE MORE USEFUL
PIECE WISE LINEAR MODEL SIMPLIFIED MODEL IDEAL MODEL
Piecewise linear model as it has maximum number of components
Simplified is used for economical use. Ideal model is just for the sake of understanding

22. EXPLAIN
VBB IS MUCH SMALLER THAN VCC
THE BASE REGION IS VERY THIN
This lower doping level decreases the conductivity (increases the resistance) of this material
by limiting the number of “free” carriers.
THE BASE REGION IS LIGHTLY DOPED
Large difference in supply voltage is necessary so that current flows from the emitter to the
collector. VBB is forward biasing so it should be smaller so that few electrons leave the base
to VBB.VCC is higher because 95% around electron leave the base and enter the collector
With base being lightly doped and small in size there are very few holes (lack of electrons)
available a few of the electron will fill the available holes. For each electron that fill s the
holes in the base (p material) another electron will leave the base and create a new hole and
enter the positive terminal of the battery
23. WHICH IS MORE USEFUL EFFICIENCY/GAIN
ALPHA BETA
Alpha measure the overall efficiency of the transistor
24. HOW TRANSISTOR SHOWS THE CURRENT GAIN

25. WHY IE IS CONSIDERED IN CALCULATING ALPHA WHILE IB IS USED IN CALCULATING THE

BETA W.R.T OVERALL/PARTIAL EFFEICINCY GAIN OF THE TRANSISTOR
Alpha is the overall efficiency so the emitter current (total transistor current) has to be
considered.
While ib shows the partial current and is used in calculating the partial efficiency of the
transistor.
26. IN PROVIDING THE EXPLANATION WHY THE WORD DIODE IS USED
Because it consist of town PN junctions

27. WHAT IS THE ADVANTAGE OF HIGH DOPING AND LOW OPONG IN THE DEISGN OGF THE
TRANSISTOR
High doping means low resistance
Low doping means high resistance
With the help of this difference in resistance, amplification can be achieved
28. WHAT IS THE EFFECT OF MAKING BASE THIN
With base being lightly doped and small in size there are very few holes (lack of electrons)
available a few of the electron will fill the available holes. For each electron that fill s the
holes in the base (p material) another electron will leave the base and create a new hole and
enter the positive terminal of the battery
29. WHAT IS THE ADVANTAGE OF MAKING THE EMITTER HIGHLY DOPED
Emitter should be highly doped because it is N material and more current is to be passed
through emitter

30. IN FULL WAVE RECTIFICATION WHY WE ALWAYS GET THE OUTPUT ABOVE THE X AXIS

31. MAIKE A TABLE TO COMPARE ALL THE FORMULAS FOR DIFFERENT RECTIFICATION
TECHNIQUES

32. WHY DO WE USE A SEIREW RESITOR IN CIRCUITS SPECIALLY FORWARD BIASED

To control the flow of current or to limit the flow of current
33. EXPLAIN BOTH MATHEMATICLLY AND THEORETICALLY THAT A TRANSISTOR WORKS AS AN
AMPLIFIER

34. HOW THE EMITTER-BASE BIAS CONTROLLS THE EMITTER-COLLECTOR CURRENT

Emitter-base bias controls the emitter-current current as most of the electrons come under
the influence of the VCC however the (smaller) VBB makes emitter-base junction forward
biased and little variation in VBB can produce bigger impact in the collector current.

35. WHAT DO YOU UNDERSTAND BY THE RANGE OF ALPHA AND BETA

The range of alpha is expressed in terms of percentage which is around 95 to 99%and shows that
most of the current enters collector.
The range of b is 50 and up which shows that lesser current (IB) is lost to the battery.it is always a
whole number.

36. WHY Q POINT IS VITAL

Quiescent point t shows the optimum level of dc current (Id) and voltage (Vd)

37. CAN WE SAY THAT Q POINT ALWAYS EXIST IN ANY DEVICE

It exists in almost all devices and determine the optimum level of DC current and DC voltage.

38. GIVE THE DEFINITOION OF THE CLAMPER IN YOUR OWN WORDS KEEPING THE FUNCTION
OF ALL WAVE SHAPING CIRCUITS IN MIND AND WITHOUT DRAWING ANY FIGURE AND
USING ANY EQUATION
 A circuit in which either the upper or lower peak of waveform is fixed to a predetermined
level.
39. WHAT IS REERSE SATURATUION CURRENT
In diode some current flows for the presence of the minority charge carriers. This current is known
as reverse saturated
The number of minority carriers, however, that fined themselves entering the depletion region
will not change, resulting in minority-carrier flow vectors of the same magnitude indicated in Fig. 1.14
with no applied voltage.
The current that exists under reverse-bias conditions is called the reverse saturation current and
is represented by Is.
40. WHAT DO YOU KNOW ABOUT THE AVALANCH REGION? EXPLAIN WITH DIAGRAM
Rapid flow of current down the slope after breakdown

41. GIVE MODES OF OPERATION OF BJT

Active mode (amplification,)
Saturation mode (as a close switch)
Cutoff mode (as an open switch)
42. WHY WE CALL BJT BIPOLAR?
The term bipolar reflects the fact that holes and electrons participate in the injection process into
the oppositely polarized material.