KSE13006/13007

KSE13006/13007

High Voltage Switch Mode Application

• High Speed Switching
• Suitable for Switching Regulator and Motor Control

1 TO-220

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : KSE13006 600 V
: KSE13007 700 V
VCEO Collector-Emitter Voltage : KSE13006 300 V
: KSE13007 400 V
VEBO Emitter- Base Voltage 9 V
IC Collector Current (DC) 8 A
ICP Collector Current (Pulse) 16 A
IB Base Current 4 A
PC Collector Dissipation (TC=25°C) 80 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector- Emitter Breakdown Voltage
: KSE13006 IC = 10mA, IB = 0 300 V
: KSE13007 400 V
IEBO Emitter Cut-off Current VEB = 9V, IC = 0 1 mA
hFE *DC Current Gain VCE = 5V, IC = 2A 8 60
VCE = 5V, IC = 5A 5 30
VCE(sat) *Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A 1 V
IC = 5A, IB = 1A 2 V
IC = 8A, IB = 2A 3 V
VBE (sat) *Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A 1.2 V
IC = 5A, IB = 1A 1.6 V
Cob Output Capacitance VCB = 10V, f = 0.1MHz 110 pF
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 4 MHz
tON Turn On Time VCC = 125V, IC = 5A 1.6 µs
tSTG Storage Time IB1 = -IB2 = 1A 3 µs
RL = 50Ω µs
tF Fall Time 0.7
* Pulse test: PW≤300µs, Duty cycle≤2%

©2000 Fairchild Semiconductor International Rev. A1, December 2000

 KSE13006/13007
Typical Characteristics

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

100 10

VCE = 5V IC = 3 IB
hFE, DC CURRENT GAIN

1
VBE(sat)

10

V CE(sat)
0.1

1 0.01
0.1 1 10 0.1 1 10 100

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000 1000
Cob[pF], OUTPUT CAPACITANCE

tR, tD [µ s], TURN ON TIME

100 tR

100

tD, V BE(off)=5V
10

VCC =125V
IC=5IB

1 10
0.1 1 10 100 1000 0.1 1 10

VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT

Figure 3. Collector Output Capacitance Figure 4. Turn On Time

10000 100
VCC=125V
IC =5IB
tSTG, tF [µs], TURN OFF TIME

tSTG
IC[A], COLLECTOR CURRENT

10
10
0µ

1000
s

DC
1m
s

100
tF
0.1

KSE13006
KSE13007
10 0.01
0.1 1 10 1 10 100 1000

IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Turn Off Time Figure 6. Safe Operating Area

©2000 Fairchild Semiconductor International Rev. A1, December 2000

 KSE13006/13007
Typical Characteristics (Continued)

100

90

80
PC[W], POWER DISSIPATION

70

60

50

40

30

20

10

0
0 25 50 75 100 125 150 175

o
TC[ C], CASE TEMPERATURE

Figure 7. Power Derating

©2000 Fairchild Semiconductor International Rev. A1, December 2000

 KSE13006/13007
Package Demensions

TO-220

1.30 ±0.10 9.90 ±0.20 4.50 ±0.20

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2000 Fairchild Semiconductor International Rev. A1, December 2000

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ HiSeC™ SuperSOT™-8

Bottomless™ ISOPLANAR™ SyncFET™
CoolFET™ MICROWIRE™ TinyLogic™
CROSSVOLT™ POP™ UHC™
E2CMOS™ PowerTrench® VCX™
FACT™ QFET™
FACT Quiet Series™ QS™
FAST® Quiet Series™
FASTr™ SuperSOT™-3
GTO™ SuperSOT™-6

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2000 Fairchild Semiconductor International Rev. E

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.