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BCR1AM
LOW POWER USE
GLASS PASSIVATION TYPE
φ5.0 MAX
4.4
5.0 MAX
VOLTAGE
2 CLASS
TYPE
NAME
3
1
12.5 MIN
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
CIRCUMSCRIBE
CIRCLE 1.25 1.25
φ0.7
1.3
3.9 MAX
1 3 2
• IT (RMS) ........................................................................ 1A
• VDRM ....................................................................... 600V
• IFGT !, IRGT !, IRGT # .............................. 5mA (3mA) ✽5
• IFGT # ..................................................................... 10mA JEDEC : TO-92
APPLICATION
Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines,
trigger circuit for low and medium triac, solid state relay,
other general purpose control applications
MAXIMUM RATINGS
Voltage class
Symbol Parameter Unit
12
VDRM Repetitive peak off-state voltage ✽1 600 V
VDSM Non-repetitive peak off-state voltage ✽1 720 V
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM
LOW POWER USE
GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 1.0 mA
VTM On-state voltage Tc=25°C, ITM=1.5A, Instantaneous measurement — — 1.6 V
VFGT ! ! — — 2.0 V
VRGT ! @ — — 2.0 V
Gate trigger voltage ✽2 Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
VRGT # # — — 2.0 V
VFGT # $ — — 2.0 V
IFGT ! ! — — 5 mA
IRGT ! @ — — 5✽5 mA
Gate trigger current ✽2 Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
IRGT # # — — 5✽5 mA
IFGT # $ — — 10 mA
VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.1 — — V
Rth (j-c) Thermal resistance Junction to case ✽3 — — 50 °C/ W
SUPPLY
1. Junction temperature VOLTAGE TIME
Tj=125°C
MAIN CURRENT (di/dt)c
2. Rate of decay of on-state commutating current
TIME
(di/dt)c=–0.5A/ms
MAIN
3. Peak off-state voltage VOLTAGE TIME
VD=400V
(dv/dt)c VD
PERFORMANCE CURVES
5 TC = 25°C
ON-STATE CURRENT (A)
3 8
2
101
7 6
5
3
2
4
100
7
5
2
3
2
10–1 0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 100 2 3 4 5 7 101 2 3 4 5 7 102
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM
LOW POWER USE
GLASS PASSIVATION TYPE
100 (%)
101 103
7 PGM = TYPICAL EXAMPLE
5 1W 7
VGM = 6V PG(AV) 5
3 = 0.1W 4
2
GATE VOLTAGE (V)
103 103
7 TYPICAL EXAMPLE 7
5
5
4 3
2
GATE TRIGGER VOLTAGE (Tj = 25°C)
3 JUNCTION TO AMBIENT
GATE TRIGGER VOLTAGE (Tj = t°C)
2 102
7
VFGT I, VRGT I 5
102 JUNCTION TO CASE
3
7 2
5 101
4 7
3 VRGT III, VFGT III 5
2 3
2
101 100
–60 –40 –20 0 20 40 60 80 100 120 140 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
1.2 100
360°
80 360°
CONDUCTION
CONDUCTION
0.8 RESISTIVE,
INDUCTIVE 60
LOADS
40
0.4
20
0 0
0 0.4 0.8 1.2 1.6 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM
LOW POWER USE
GLASS PASSIVATION TYPE
100 (%)
ALLOWABLE AMBIENT TEMPERATURE CURRENT VS. JUNCTION
VS. RMS ON-STATE CURRENT TEMPERATURE
160 105
CURVES APPLY REGARDLESS 7 TYPICAL EXAMPLE
;;;;;;;;;;;
100 (%)
;;;;;;;;;;;
TYPICAL
5
LACHING CURRENT (mA)
;;;;;;;;;;;
4 EXAMPLE
2
;;;;;;;;;;;
3
HOLDING CURRENT (Tj = 25°C)
102
HOLDING CURRENT (Tj = t°C)
;;;;;;;;;;;
2
7
;;;;;;;;;;;
5
102
;;;;;;;;;;;
3
7 2
5
4
3
101
7
5
;;;;;;;;;;;
;;;;;;;;;;;
T2+, G+
– – TYPICAL
T2 , G
3 T2– , G+ EXAMPLE
2
2
101 100
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
160 160
100 (%)
120 120
BREAKOVER VOLTAGE (Tj = 25°C)
BREAKOVER VOLTAGE (Tj = t°C)
I QUADRANT
100 100
80 80
60 60
III QUADRANT
40 40
20 20
0 0
–60 –40 –20 0 20 40 60 80 100120 140 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM
LOW POWER USE
GLASS PASSIVATION TYPE
101 103
100 (%)
7 TYPICAL EXAMPLE TC = 125°C TYPICAL EXAMPLE
COMMUTATING VOLTAGE (V/µs)
7
5 IT = 1A 5
4 τ = 500µs 4
3 VD = 200V 3
10–1 –1 101 0
10 2 3 4 5 7 100 2 3 4 5 7 101 10 2 3 4 5 7 101 2 3 4 5 7 102
6Ω 6Ω
6V A 6V A
V RG V RG
6Ω 6Ω
A A
6V 6V
V RG V RG
Mar. 2002
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