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NTD4813N

Power MOSFET
30 V, 40 A, Single N--Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
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• Optimized Gate Charge to Minimize Switching Losses
• These are Pb--Free Devices
V(BR)DSS RDS(ON) MAX ID MAX
Applications
13 mΩ @ 10 V
• CPU Power Delivery 30 V 40 A
• DC--DC Converters 24 mΩ @ 4.5 V

• High Side Switching D

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)


Parameter Symbol Value Unit
G
Drain--to--Source Voltage VDSS 30 V
Gate--to--Source Voltage VGS ±20 V
Continuous Drain TA = 25°C ID 9.0 A S
Current RθJA N--CHANNEL MOSFET
(Note 1) TA = 85°C 7.0
Power Dissipation TA = 25°C PD 1.94 W 4 4
RθJA (Note 1)
4
Continuous Drain TA = 25°C ID 7.6 A
Current RθJA
(Note 2) Steady TA = 85°C 5.9 1 2 1 1
State 3 2 3
Power Dissipation TA = 25°C PD 1.27 W 2
RθJA (Note 2) 3
CASE 369AA CASE 369AC CASE 369D
Continuous Drain TC = 25°C ID 40 A 3 IPAK
DPAK IPAK
Current RθJC
TC = 85°C 31 (Bent Lead) (Straight Lead) (Straight Lead
(Note 1)
STYLE 2 DPAK)
Power Dissipation TC = 25°C PD 35.3 W
RθJC (Note 1)
Pulsed Drain tp=10ms TA = 25°C IDM 90 A
MARKING DIAGRAMS
Current & PIN ASSIGNMENTS
Current Limited by Package TA = 25°C IDmaxPkg 35 A 4
Drain
Operating Junction and Storage TJ, --55 to °C 4 4
Temperature TSTG +175 Drain Drain
13NG
YWW

Source Current (Body Diode) IS 29 A


48
13NG
YWW

13NG
YWW

Drain to Source dV/dt dV/dt 6 V/ns


48

48

Single Pulse Drain--to--Source Avalanche EAS 72 mJ


Energy (VDD = 24 V, VGS = 10 V,
IL = 12 Apk, L = 1.0 mH, RG = 25 Ω) 2
1 Drain 3 1 2 3
Lead Temperature for Soldering Purposes TL 260 °C
(1/8” from case for 10 s) Gate Source Gate Drain Source 1 2 3
Gate Drain Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Y = Year
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. WW = Work Week
4813N = Device Code
G = Pb--Free Package

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.

© Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:


June, 2010 -- Rev. 6 NTD4813N/D
NTD4813N

THERMAL RESISTANCE MAXIMUM RATINGS


Parameter Symbol Value Unit
Junction--to--Case (Drain) RθJC 4.25
Junction--to--TAB (Drain) RθJC--TAB 3.5
°C/W
Junction--to--Ambient – Steady State (Note 1) RθJA 77.5
Junction--to--Ambient – Steady State (Note 2) RθJA 118.5
1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu.
2. Surface--mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)


Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V
Drain--to--Source Breakdown Voltage V(BR)DSS/ 24.5
mV/°C
Temperature Coefficient TJ
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25 °C 1
VDS = 24 V mA
TJ = 125°C 10
Gate--to--Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.5 2.5 V
Negative Threshold Temperature VGS(TH)/TJ 5.4
mV/°C
Coefficient
Drain--to--Source On Resistance RDS(on) VGS = 10 V to ID = 30 A 10.9 13
11.5 V
ID = 15 A 10.3

VGS = 4.5 V ID = 30 A 18.6 24
ID = 15 A 17.1
Forward Transconductance gFS VDS = 15 V, ID = 10 A 6.0 S
CHARGES AND CAPACITANCES
Input Capacitance CISS 860
Output Capacitance COSS VGS = 0 V, f = 1.0 MHz, VDS = 12 V 201 pF
Reverse Transfer Capacitance CRSS 115
Total Gate Charge QG(TOT) 6.9 7.9
Threshold Gate Charge QG(TH) 1.2
VGS = 4.5 V, VDS = 15 V; ID = 30 A nC
Gate--to--Source Charge QGS 3.1
Gate--to--Drain Charge QGD 3.6
Total Gate Charge QG(TOT) VGS = 11.5 V, VDS = 15 V; 15.6 nC
ID = 30 A

SWITCHING CHARACTERISTICS (Note 4)


Turn--On Delay Time td(ON) 10.5
Rise Time tr VGS = 4.5 V, VDS = 15 V, ID = 15 A, 19.3
ns
Turn--Off Delay Time td(OFF) RG = 3.0 Ω 10.1
Fall Time tf 3.3
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.

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NTD4813N

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)


Parameter Symbol Test Condition Min Typ Max Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn--On Delay Time td(ON) 6.0
Rise Time tr VGS = 11.5 V, VDS = 15 V, 18.3
ns
Turn--Off Delay Time td(OFF) ID = 15 A, RG = 3.0 Ω 17.7
Fall Time tf 2.1
DRAIN--SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.8 1.2
V
IS = 30 A TJ = 125°C 0.9
Reverse Recovery Time tRR 16
Charge Time ta VGS = 0 V, dIs/dt = 100 A/ms, 10 ns
Discharge Time tb IS = 30 A 5.6
Reverse Recovery Charge QRR 7.0 nC
PACKAGE PARASITIC VALUES
Source Inductance LS 2.49 nH
Drain Inductance, DPAK LD 0.0164
Drain Inductance, IPAK LD TA = 25°C 1.88
Gate Inductance LG 3.46
Gate Resistance RG 2.5 Ω
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.

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NTD4813N

TYPICAL PERFORMANCE CURVES

60 60
10 V TJ = 25°C VDS ≥ 10 V
6V 4.5 V
ID, DRAIN CURRENT (AMPS)

ID, DRAIN CURRENT (AMPS)


50 5V 50

40 40
4V
30 30
3.8 V

20 3.6 V 20
TJ = 125°C

10 10 TJ = 25°C
3V TJ = --55°C
0 0
0 1 2 3 4 5 1 2 3 4 5 6 7
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS) VGS, GATE--TO--SOURCE VOLTAGE (VOLTS)

Figure 1. On--Region Characteristics Figure 2. Transfer Characteristics


RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω)

RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω)


0.030 0.042
0.029 ID = 30 A TJ = 25°C
0.028
0.027 TJ = 25°C 0.037
0.026
0.025 0.032
0.024
0.023 0.027
0.022
0.021 VGS = 4.5 V
0.020 0.022
0.019
0.018 0.017
0.017
0.016
0.015 0.012 VGS = 11.5 V
0.014
0.013 0.007
0.012
0.011
0.010 0.002
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 11 11.5 10 15 20 25 30 35 40 45 50 55 60
VGS, GATE--TO--SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)

Figure 3. On--Resistance vs. Gate--to--Source Figure 4. On--Resistance vs. Drain Current and
Voltage Gate Voltage
RDS(on), DRAIN--TO--SOURCE RESISTANCE

1.8 100,000
ID = 30 A VGS = 0 V
1.7
VGS = 10 V TJ = 150°C
1.6
1.5 10,000
IDSS, LEAKAGE (nA)

1.4
(NORMALIZED)

1.3 TJ = 125°C
1.2 1000
1.1
1.0
0.9 100
0.8 TJ = 25°C
0.7
0.6 10
--50 --25 0 25 50 75 100 125 150 175 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)

Figure 5. On--Resistance Variation with Figure 6. Drain--to--Source Leakage Current


Temperature vs. Drain Voltage

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NTD4813N

TYPICAL PERFORMANCE CURVES

1000 15

VGS , GATE--TO--SOURCE VOLTAGE (VOLTS)


TJ = 25°C
900 13.5
800 Ciss 12 QT
C, CAPACITANCE (pF)

700 10.5
600 9
500 7.5
400 6
Q1 Q2
300 4.5
Coss ID = 30 A
200 3 VDD = 15 V
100 1.5 VGS = 11.5 V
Crss TJ = 25°C
0 0
0 5 10 15 20 25 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS) QG, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate--To--Source and Drain--To--Source


Voltage vs. Total Charge

100 30
IS, SOURCE CURRENT (AMPS) VGS = 0 V
tr 25 TJ = 25°C

20
t, TIME (ns)

td(off)

10 15

td(on)
10

tf VDD = 15 V
ID = 30 A 5
VGS = 11.5 V
1 0
1 10 100 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE (OHMS) VSD, SOURCE--TO--DRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time Figure 10. Diode Forward Voltage vs. Current
Variation vs. Gate Resistance

1000 80
EAS, SINGLE PULSE DRAIN--TO--SOURCE

VGS = 20 V ID = 12 A
I D, DRAIN CURRENT (AMPS)

SINGLE PULSE 70
TC = 25°C
AVALANCHE ENERGY (mJ)

60
100
10 ms 50

40
100 ms
30
10
1 ms 20
RDS(on) LIMIT
THERMAL LIMIT 10 ms 10
PACKAGE LIMIT dc
1 0
0.1 1 10 100 25 50 75 100 125 150 175
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.
Safe Operating Area Starting Junction Temperature

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NTD4813N

TYPICAL PERFORMANCE CURVES

100

I D, DRAIN CURRENT (AMPS)


100°C 25°C
125°C
10

0.1
1 10 100 1000
PULSE WIDTH (ms)

Figure 13. Avalanche Characteristics


r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE

1.0
D = 0.5

0.2
(NORMALIZED)

0.1

0.1 0.05 P(pk)


RθJC(t) = r(t) RθJC
0.02
D CURVES APPLY FOR POWER
0.01 PULSE TRAIN SHOWN
t1 READ TIME AT t1
SINGLE PULSE t2 TJ(pk) -- TC = P(pk) RθJC(t)
DUTY CYCLE, D = t1/t2
0.01
1.0E--05 1.0E--04 1.0E--03 1.0E--02 1.0E--01 1.0E+00 1.0E+01
t, TIME (ms)

Figure 14. Thermal Response

ORDERING INFORMATION
Device Package Shipping†
NTD4813NT4G DPAK 2500 / Tape & Reel
(Pb--Free)

NTD4813N--1G DPAK--3 75 Units / Rail


(Pb--Free)

NTD4813N--35G IPAK Trimmed Lead 75 Units / Rail


(3.5  0.15 mm)
(Pb--Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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NTD4813N

PACKAGE DIMENSIONS

DPAK (SINGLE GUAGE)


CASE 369AA--01
ISSUE B

NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
E A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN
DIMENSIONS b3, L3 and Z.
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
4 5. DIMENSIONS D AND E ARE DETERMINED AT THE
L3 Z OUTERMOST EXTREMES OF THE PLASTIC BODY.
D 6. DATUMS A AND B ARE DETERMINED AT DATUM
DETAIL A H PLANE H.
1 2 3
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
L4 A 0.086 0.094 2.18 2.38
b2 A1 0.000 0.005 0.00 0.13
b c b 0.025 0.035 0.63 0.89
b2 0.030 0.045 0.76 1.14
e 0.005 (0.13) M C H b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
GAUGE SEATING c2 0.018 0.024 0.46 0.61
L2 PLANE C PLANE D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
H 0.370 0.410 9.40 10.41
L
A1 L 0.055 0.070 1.40 1.78
L1 L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
DETAIL A L3 0.035 0.050 0.89 1.27
ROTATED 90° CW L4 ------ 0.040 ------ 1.01
Z 0.155 ------ 3.93 ------

STYLE 2:
SOLDERING FOOTPRINT* PIN 1. GATE
2. DRAIN
3. SOURCE
6.20 3.00 4. DRAIN
0.244 0.118
2.58
0.102

5.80 1.60 6.17


0.228 0.063 0.243

SCALE 3:1 inches


mm 

*For additional information on our Pb--Free strategy and soldering


details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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NTD4813N

PACKAGE DIMENSIONS

3 IPAK, STRAIGHT LEAD


CASE 369AC--01
ISSUE O
NOTES:
1.. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2.. CONTROLLING DIMENSION: INCH.
B C 3. SEATING PLANE IS ON TOP OF
DAMBAR POSITION.
V R E 4. DIMENSION A DOES NOT INCLUDE
DAMBAR POSITION OR MOLD GATE.

INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.22
A
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
SEATING PLANE D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
W K F 0.037 0.043 0.94 1.09
G 0.090 BSC 2.29 BSC
F H 0.034 0.040 0.87 1.01
J J 0.018 0.023 0.46 0.58
G K 0.134 0.142 3.40 3.60
H
R 0.180 0.215 4.57 5.46
D 3 PL V 0.035 0.050 0.89 1.27
0.13 (0.005) W W 0.000 0.010 0.000 0.25

IPAK (STRAIGHT LEAD DPAK)


CASE 369D--01
ISSUE B

B C NOTES:
1. DIMENSIONING AND TOLERANCING PER
V R E ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
Z A 0.235 0.245 5.97 6.35
A B 0.250 0.265 6.35 6.73
S C 0.086 0.094 2.19 2.38
1 2 3
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
--T-- F 0.037 0.045 0.94 1.14
SEATING G 0.090 BSC 2.29 BSC
PLANE K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
J S 0.025 0.040 0.63 1.01
F V 0.035 0.050 0.89 1.27
H
Z 0.155 ------ 3.93 ------
D 3 PL
STYLE 2:
G 0.13 (0.005) M T PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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