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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU508AF

GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in
horizontal deflection circuits of colour television receivers.

QUICK REFERENCE DATA


SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 700 V
IC Collector current (DC) - 8 A
ICM Collector current peak value - 15 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 34 W
VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.6 A - 1.0 V
ICsat Collector saturation current f = 16 kHz 4.5 - A
tf Fall time ICsat = 4.5 A; f = 16kHz 0.7 - µs

PINNING - SOT199 PIN CONFIGURATION SYMBOL


PIN DESCRIPTION c
case
1 base
2 collector
b
3 emitter

case isolated
1 2 3 e

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 700 V
IC Collector current (DC) - 8 A
ICM Collector current peak value - 15 A
IB Base current (DC) - 4 A
IBM Base current peak value - 6 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 34 W
Tstg Storage temperature -65 150 ˚C
Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W
Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W
Rth j-a Junction to ambient in free air 35 - K/W

July 1998 1 Rev 1.200


Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU508AF

ISOLATION LIMITING VALUE & CHARACTERISTIC


Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink

STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
1
ICES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ˚C
IEBO Emitter cut-off current VEB = 6.0 V; IC = 0 A - - 10 mA
VCEOsus Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltages IC = 4.5 A; IB = 1.6 A - - 1.0 V
VBEsat Base-emitter saturation voltage IC = 4.5 A; IB = 2 A - - 1.1 V
hFE DC current gain IC = 100 mA; VCE = 5 V 6 13 30 -

DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
fT Transition frequency at f = 5 MHz IC = 0.1 A;VCE = 5 V 7 - MHz
CC Collector capacitance at f = 1MHz VCB = 10 V 125 - pF
Switching times (16 kHz line ICsat = 4.5 A;Lc 1 mH;Cfb = 4 nF
deflection circuit) IB(end) = 1.4 A; LB = 6 µH; -VBB = -4 V;
-IBM = 2.25 A
ts Turn-off storage time 6.5 - µs
tf Turn-off fall time 0.7 - µs

1 Measured with half sine-wave voltage (curve tracer).

July 1998 2 Rev 1.200


Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU508AF

ICsat
+ 50v 90 %
100-200R

IC

10 %
Horizontal
tf t
Oscilloscope ts
IB
Vertical IBend

100R 1R t
6V
30-60 Hz
- IBM

Fig.1. Test circuit for VCEOsust. Fig.4. Switching times definitions.

IC / mA + 150 v nominal
adjust for ICsat

1mH
250

200

IBend LB D.U.T. BY228


100
12nF

0 -VBB
VCE / V min

VCEOsust

Fig.2. Oscilloscope display for VCEOsust. Fig.5. Switching times test circuit.

ICsat h FE BU508AD
TRANSISTOR 100
IC DIODE

IB IBend
10
t

20us 26us

64us

VCE
1
0.1 1 10
t IC/A
Fig.3. Switching times waveforms. Fig.6. Typical DC current gain. hFE = f (IC)
parameter VCE

July 1998 3 Rev 1.200


Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU508AF

VCESAT / V BU508AD Zth K/W bu508ax


1 10

0.9

0.8 0.5
1
0.7 0.2
0.1
0.6
0.05
0.1
0.5 0.02
0.4

0.3 0.01 PD tp tp
D=
0 T
0.2

0.1 t
T
0.001
0 1.0E-07 1.0E-05 1E-03 1.0E-01 1.0E+1
0.1 1 IC / A 10 t/s

Fig.7. Typical collector-emitter saturation voltage. Fig.10. Transient thermal impedance.


VCEsat = f (IC); parameter IC/IB Zth j-hs = f(t); parameter D = tp/T

VBESAT / V BU508AD PD% Normalised Power Derating


1.4 120
with heatsink compound
110
100
1.2 90
80
IC = 6A 70
60
1
IC = 4.5A 50
40
IC = 3A
30
0.8
20
10
0
0.6 0 20 40 60 80 100 120 140
0 1 2 3 IB / A 4 Ths / C
Fig.8. Typical base-emitter saturation voltage. Fig.11. Normalised power dissipation.
VBEsat = f (IB); parameter IC PD% = 100⋅PD/PD 25˚C = f (Ths)

VCESAT/V BU508AD
10

IC = 6A

IC = 4.5A

IC = 3A
0.1
0.1 1 10
IB/A

Fig.9. Typical collector-emitter saturation voltage.


VCEsat = f (IB); parameter IC

July 1998 4 Rev 1.200


Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU508AF

IC / A IC / A
100 100

= 0.01 = 0.01
ICM max ICM max
tp = tp =
10 IC max 10 IC max
10 us 10 us
II II

Ptot max Ptot max


1 1
100 us 100 us

1 ms 1 ms
I I
0.1 0.1
10 ms 10 ms

DC DC

0.01 0.01
1 10 100 1000 1 10 100 1000
VCE / V VCE / V
Fig.12. Forward bias safe operating area. Ths = 25˚C Fig.13. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation. I Region of permissible DC operation.
II Extension for repetitive pulse operation. II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and NB: Mounted without heatsink compound and
30 ± 5 newton force on the centre of 30 ± 5 newton force on the centre of
the envelope. the envelope.

July 1998 5 Rev 1.200


Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU508AF

MECHANICAL DATA

Dimensions in mm
15.3 max 5.2 max
Net Mass: 5.5 g
0.7 3.1
7.3 3.3 3.2

o
6.2 45
5.8

21.5
max
seating
plane

3.5 max
3.5 not tinned

15.7
min

1 2 3
2.1 max 1.2 0.7 max
1.0
0.4 M 2.0
5.45 5.45

Fig.14. SOT199; The seating plane is electrically isolated from all terminals.

Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

July 1998 6 Rev 1.200


Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU508AF

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS


These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

July 1998 7 Rev 1.200