SiC-MOSFET Composite Boost Converter with
22 kW/L Power Density for Electric Vehicle
Application
Hyeokjin Kim, Hua Chen,
Dragan Maksimović, Robert Erickson
Department of Electrical, Computer and Energy Engineering
University of Colorado Boulder
Boulder, Colorado, 80309
Abstract
A SiC-MOSFET composite boost converter for an elec-
tric vehicle power train application exhibits a volumetric
power density of 22 kW/L and gravimetric power density
of 20 kW/kg. The composite converter architecture, which
is composed of partial-power boost, buck, and dual active
bridge modules, leads to a 60% reduction in CAFE average
losses, to a 280% improvement in power density, and
to a 76% reduction in magnetics volume compared to
the conventional Si-IGBT boost converter. These gains
were achieved with the help of optimization based on a
comprehensive loss model including SiC-MOSFET switch-
ing loss and magnetic losses based on the FEM method
simulated in FEMM. Experimental results for the 22 kW/L
SiC-MOSFET composite converter project 97.5% average
efficiency on US06 driving cycle and a CAFE average
efficiency of 97.8% .
I. Introduction
Reduction in losses of the power conversion unit (PCU)
in electric vehicle (EV) or hybrid electric vehicle (HEV)
powertrains translates directly into increased MPGe (Mile-per-
Gallon equivalent) and downsizing of cooling capacity associ-
ated with thermal management. To increase peak efficiency
and achieve high CAFE (corporate average fuel economy)
average efficiency, the composite converter architecture has
been introduced [1]. By utilization of pass-through modes
of the composite converter and optimization by reallocating
silicon semi-conductor die and magnetics, the composite con-
verter achieved 98.1% CAFE average efficiency. While the
composite converter achieves CAFE average loss reduction by
a factor of three relative to the conventional Si-IGBT boost
converter [2], a volume reduction in magnetics is challenging
owing to the low switching frequency of the optimum design.
One approach associated with this magnetic volume reduction
without loss of efficiency involves wide band-gap devices
such as SiC-MOSFET to utilize their superior switching
performances [3]. In the case of boost converter employed
978-1-5090-5366-7/17/$31.00 ©2017 IEEE 134
Zach Cole, Brandon Passmore,
Kraig Olejniczak
Wolfspeed
Fayetteville, AR, United States
in EV powertrain application, even though the wide band-
gap devices enable the reduction in magnetic volumes and
improvement on peak efficiency, the low efficiency is still
observed under the operating points requiring high voltage
conversion ratio owing to high magnetic loss. Also large
volume of capacitors are necessary to meet maximum voltage
requirement and peak RMS capacitor current. As a result,
the SiC-MOSFET conventional boost converter exhibits low
average efficiencies on EPA standard driving cycles, relative
to the Si-MOSFET composite boost converter, and employs
similar volume of capacitors, compared to the conventional
Si-IGBT boost converter.
In this paper, 22 kW/L volumetric power density and 97.8%
CAFE average efficiency are demonstrated in a SiC-MOSFET
composite boost converter. The composite boost converter
architecture achieves improvements in peak efficiency and high
average efficiencies on EPA standard driving cycles such as
US06, UDDS, or HWFET compared to the conventional boost
converter so that the improvement on CAFE average efficiency
is enabled. Compared to the conventional Si-IGBT boost
converter whose power density is reported as 5.7 kW/L [2], the
SiC-MOSFET composite converter achieves a 76% magnetic
volume reduction, a 280% power density improvement, and
a 60% CAFE average loss reduction. The composite boost
converter architecture exhibits the reduction in the capacitor
RMS current rating and voltage rating which directly translates
into a capacitor volume, compared to the conventional boost
converter. Also the magnetic volume reduction is demonstrated
through the superior switching capability of SiC-MOSFET
device. With the SiC-MOSFET switching device and com-
posite boost converter, the volume reductions in capacitor and
magnetic are enabled and this achievement is explained in
Section II. To facilitate design optimization, the comprehensive
loss model including switching loss and magnetic loss is
developed and the loss model is explained in Section III.
With the developed comprehensive loss model, the design of
SiC-MOSFET composite boost converter and the design result
are explained in Section IV. A laboratory prototype having
22 kW/L volumetric power density has been fabricated and
 80
Torque [Nm]
experimental results are presented in Section V. Power [kW]
70
Vbus [10V]
II. Size reduction of passive components 60

The conventional boost converter employed in EV or

50
HEV powertrain is comprised of capacitors, magnetics, semi-
conductor devices, and peripheral circuits such as gate drivers, 40
sensors and controllers. The capacitors and magnetics occupy
significant part of boost converter module volume [2]. The 30
capacitor volume is proportional to the voltage rating and
20
peak magnitude of capacitor root-mean-square (RMS) current.
In the case of conventional boost converter, the magnitude 10
of capacitor RMS current is proportional to the load power
and voltage conversion ratio. Based on the assumption that 0
0 2000 4000 6000 8000 10000
the rated power can be delivered to the load over the entire RPM
range of operating points, the magnitude of capacitor RMS
current is maximized when the voltage conversion ratio is Fig. 2. Motor torque, shaft power, and required inverter DC bus voltage as
two while the rated power is delivered to the load [4]. The functions of motor RPM based on 30kW EV powertrain model
RMS current rating and capacitance per volume as functions
of voltage rating of Metalized Polypropylene Film Capacitors
(Film capacitor) are shown in Fig. 1. As higher voltage ratings,
the RMS current capability and capacitance per volume is model [5]. To minimize converter and inverter losses, the
degraded. It follows that higher voltage rating necessitates required dc bus voltage is found as
larger volume of capacitor to meet the RMS current rating 
requirement. Vbus,re f = α(Vds2
+ Vqs
2 ), (1)

where Vds and Vqs are the machine d and q axis voltages
10-4 (in the rotor reference frame), and α is selected to avoid
8
the need for field weakening. In the considered permanent-
7 magnet synchronous machine, α is taken to be 3. At the low
voltage conversion ratio of the boost converter, the maximum
6 deliverable power is proportional to the motor speed. The
typical EV powertrain load causes the boost capacitor RMS
5
current magnitude to be proportional to the voltage conversion
4
ratio. The resulting peak output capacitor RMS current and
peak output power of the boost converter versus motor speed
3 (RPM) at 250 V battery voltage are shown in Fig. 3. The
peak RMS current is observed at high battery-to-bus voltage
2 conversion ratio. Assuming that a conventional boost converter
is designed to meet the specifications shown in Figs. 2 and
1 RMS[A]/Vol[mm3 ]
3, the voltage rating of the output capacitor must be higher
C[uF]/Vol[mm3 ]
0 than the maximum DC bus voltage (800 V), and the capacitor
300 400 500 600 700 800 900 RMS current rating must be higher than the peak RMS current
Vrating [V]
(64 A).
Fig. 1. Capacitor RMS current rating per volume and capacitance per volume With the composite boost converter architecture shown in
as functions of voltage rating Fig. 4 [1], the capacitor RMS current and voltage ratings are
reduced. The composite boost converter architecture consists
The boost converter employed in EV or HEV powertrain of three dissimilar converter modules, buck, boost, and dual
is required to operate over wide range of power and voltage active bridge (DAB) operated as DC transformer (DCX). Since
conversion ratio. However, the rated power is delivered to the the output voltage of boost module employed in composite
load at high motor speeds. Based on the assumption that a boost converter is operated within 400 V and the boost mod-
250 V battery is employed and that the maximum inverter ule processes partial system power, voltage rating and peak
DC bus voltage is 800 V, the motor torque, load power and capacitor RMS current are reduced. Based on the RMS current
required DC bus voltage for the inverter as functions of motor capability per volume as a function of voltage rating shown in
speed are shown in Fig. 2 for the 30 kW rated EV powertrain Fig. 1, the volume reduction in the output capacitor is 41%,

135
 80 tional, and Si-IGBT conventional boost converters at 250 Vin ,
650 Vbus is shown in Fig. 5. Compared to the Si-IGBT
70
conventional boost converter, the SiC-MOSFET conventional
60 boost converter achieves a reduction in losses over a wide
range of operating points, particularly at low power. The
50 resulting magnetic volume is reduced by 60%. Nevertheless,
40

100
30
99
20
98

10 97
Capacitor RMS current [A]
Power [kW]

Efficiency [%]
0 96
300 400 500 600 700 800
Vbus [V] 95

94
Fig. 3. Peak RMS current of output capacitor employed in boost converter
and load power as functions of output voltage in a 30 kW EV powertrain 93

92 SiC-MOSFET Composite boost

Si-MOSFET Composite boost
91 SiC-MOSFET Conv. boost
relative to the output capacitor of conventional boost converter. Si-IGBT Conv. boost
90
Even though additional capacitors are necessary at the DAB 0 0.2 0.4 0.6 0.8 1
Power / Prated
module input and output, the peak magnitude of capacitor
RMS currents for the DAB converter are very small when
Fig. 5. Comparison of efficiency as a function of normalized power for SiC-
the voltage conversion ratio is close to the transformer turns MOSFET composite, Si-MOSFET composite, SiC-MOSFET conventional,
ratio [6]. The resulting net capacitor volume of the composite and Si-IGBT conventional boost converter at 250 Vin , 650 Vbus
boost converter is reduced by a factor of 1.4, compared to the
net capacitor volume of the conventional boost converter. efficiency of the SiC-MOSFET conventional boost converter
is inferior to the Si-MOSFET composite converter, because
of high magnetics losses at operating points requiring high
Buck DCX
Mbuck(D) 1:NDCX voltage conversion ratio. When SiC-MOSFETs are applied in
the composite boost converter, superior efficiency and power
density can be obtained. The combination of the composite
+ converter architecture and SiC-MOSFET switching devices
enables reductions in capacitor and magnetic volumes, and
VBUS much improved efficiency as discussed further in the rest of
this paper.

- III. Loss model

VIN
Boost
Mboost(D)
Fig. 4. Composite boost converter architecture [1]
The magnetic volume in the Si-MOSFET composite con-
verter is approximatley the same as in the conventional boost
converter, because of the relatively low switching frequency
selected in the the optimized design [5]. To reduce magnetic
volume SiC-MOSFET devices can be employed at a higher
switching frequency without loss of efficiency owing to supe-
rior switching performance compared to the Si-MOSFET or
Si-IGBT devices. An efficiency comparison of SiC-MOSFET
composite, Si-MOSFET composite, SiC-MOSFET conven-
In this paper, the SiC-MOSFET composite boost converter
is designed to demonstrate not only high power density, but
also high average efficiency. To facilitate converter module
design optimization, a comprehensive loss model is developed.
The model includes semiconductor loss comprised of switch-
ing and conduction losses, and magnetic loss including dc and
ac winding losses and core loss.
A. Semiconductor loss
Piecewise linear (PWL) function model [7] is employed
for switching loss calculation. An advantage of the PWL
switching loss model is that it is based on the parameters
listed in manufacturer’s datasheets and parameters of gate-
driver circuit. The developed PWL switching loss model is
based on the following assumptions:

136
 99

98.8
• The switching loss is negligible when the switching
device is operated under zero-voltage switching (ZVS). 98.6

• Parasitic circuit inductance and any ringing during switch-

98.4
ing transition are neglected.

Efficiency [%]
98.2
Based on the PWL switching loss model, instantaneous loss
in each switching interval is calculated and average switching 98
loss over one switching period is estimated. Also, the SiC-
97.8
MOSFET conduction losses can be found as
Pconduction = RDS IRMS 2 (2) 97.6

97.4
where RDS is the MOSFET on-state resistance and IRMS is Measured efficiency
Loss model
the RMS current flowing through the MOSFET. To verify the 97.2
1 2 3 4 5 6 7 8 9 10
semiconductor loss model, a prototype board configured as a Power [kW]
boost converter is fabricated using 900V/10mΩ SiC-MOSFET
[8] packaged in HT-4000 module [9], as shown in Fig. 6. Fig. 7. Efficiency as a function of output power based on the SiC-MOSFET
Comparisons of measured efficiencies and the efficiencies boost module loss model (red dashed line) and experimental results (black
dots) at 200Vin and 208Vout

99

98.8

98.6
Efficiency [%]

98.4

98.2

98
Fig. 6. Photograph of the Wolfspeed HT-4000 SiC-MOSFET full bridge
module
97.8
Measured efficiency
based on the switching loss model are shown in Figs. 7 and 8 Loss model
97.6
at the operating points 200Vin /209Vout and 300Vin /313Vout at 2 4 6 8 10 12 14 16
Power [kW]
200 kHz switching frequency. Under the voltage conversion
ratio close to unity, the switching loss dominates the converter
loss, while magnetic loss is negligible and conduction loss can Fig. 8. Modeled (red dashed line) and measured (black dots) efficiency as
functions of output power for the SiC-MOSFET boost module at 300Vin and
be easily predicted. The developed loss model shows good 313Vout
agreement with the measured data over wide ranges of power
and voltage.
B. Magnetic loss model
The magnetic loss model consists of dc and ac winding and efficiency predicted based on the loss model is shown in
losses, and core loss. Core loss is calculated according to the Fig. 9 at four different operating conditions, 100Vin /146Vout ,
iGSE method [10]. AC winding losses are calculated using a 150Vin /220Vout , 200Vin /294Vout , and 250Vin /368Vout . The mag-
2D FEM tool, FEMM [11]. The magnetic loss is measured netic loss model shows good agreement with the measured
in the prototype converter configured as a boost converter data.
operated at 240 kHz switching frequency, and high voltage
conversion ratio under light load. Under these light-load op- IV. Design of SiC-MOSFET composite boost converter
erating conditions, conduction losses are very low, and power Based on the loss model discussed in Section III, the
semiconductors are zero-voltage switching so that switching composite boost converter is designed to demonstrate high
losses are negligible. As a result, magnetic losses dominates volumetric and gravimetric power density, and high average
the total converter losses. A comparison of measured efficiency efficiency. The converter specifications are listed in Table I.

137
 100
100Vin / 146Vout
99 150Vin / 220Vout
200Vin / 294Vout
98 250Vin / 368Vout

97
Efficiency [%]

96

95

94

93

92

91

90
0 0.5 1 1.5 2 2.5
Power [kW]
Fig. 10. US06 driving cycle density plot of operating points [5]

Fig. 9. Efficiency calculated based on the magnetic loss model and measured
efficiency as functions of output power for the boost module operated at
100Vin /146Vout , 150Vin /220Vout , 200Vin /294Vout , and 250Vin /368Vout . At the
considered low-power, zero-voltage-switching operating points, semiconduc-
tor losses are negligible. capacitor volume is reduced by 17% and the magnetic volume
is reduced by 25%, compared to a non-interleaved design. The
TABLE I optimization results are listed in Table II.
SiC-MOSFET Composite Boost Converter Specifications

Input voltage 200 - 300V TABLE II

DC bus voltage 800V maximum SiC-MOSFET Composite Converter Magnetics Design Summary

Buck / Boost module

Switching frequency 240 kHz
Inductance 5.2 μH for Boost, 3.4 μH for Buck
Inductor core size and material Two ferrite, EILP 43
With the 900V/10mΩ SiC-MOSFET module consisting DCX module
of two half bridges, switching frequency and magnetics are Switching frequency 240 kHz
optimized. To facilitate minimum average loss over US06 Transformer turns ratio 4:6
Transformer core size and material Ferrite, EILP 64
driving cycle, EV powertrain simulation model is developed
based on a vehicle modeled after Nissan LEAF. The required
motor power and bus voltage are extracted from the simulation
results and the resulting density plot for the US06 driving For capacitor design, single or multiple capacitors can be
cycle is shown in Fig. 10 in the normalized motor power configured to meet the peak RMS current requirement. To
versus required bus voltage plane. Higher frequency counts minimize the volume of the composite boost converter and
of operating points are represented by darker shadings. The to meet the peak capacitor RMS current, an exhaustive search
required bus voltage is distributed in the range between battery is performed to find an optimum set of capacitors. The TDK’s
voltage and maximum bus voltage. On the other hand, the Metalized Polypropylene Film capacitors are incorporated into
load power is distributed within 50% of the system power the parameter library and the selected capacitors are listed
rating. This trend can be also be observed on UDDS or in Table. III. The optimized SiC-MOSFET composite boost
HWFET driving cycles [5]. Therefore, a boost converter with converter design achieves a peak power rating of 39 kW with
high efficiency at light loads is able to improve the average a predicted total volume of 1.8 liters.
efficiency on standard EPA driving cycles. To optimize the
converter over US06 driving cycle, all operating points should TABLE III
be taken account. However, this brute force method takes pro- SiC-MOSFET Composite Converter Capacitors Design Summary
hibitively large amounts of computational effort. To reduce the
Input 2x 6.8μF / 450V
computational effort without loss of accuracy, a weighted loss Boost output 3x 3.3μF / 630V
method is employed as described in [5]. For the buck and boost DAB input 2x 5.0μF / 450V
modules, interleaving control scheme is employed to reduce DAB output 1x 4.7μF / 630V
magnetic volume and capacitor RMS current, which directly
translates into reduction in capacitor volume. As a result, the

138
 V. Experimental results
Based on the converter optimization summarized in Sec-
tion IV, the SiC-MOSFET composite boost converter shown
in Fig. 11 has been fabricated and tested. The prototype board
consists of driver board, power board, SiC-MOSFET mod-
ule, cold-plate, capacitors, and magnetics. The 3-dimensional
exploded view of SiC-MOSFET composite boost converter
is shown in Fig. 12. To reduce resistive PCB trace losses,
the power board utilizes heavy copper traces, while standard
copper traces are employed on the driver board to allow small
monolithic IC components.
Fig. 11. SiC-MOSFET composite boost converter prototype board. Top view
(left), bottom view (right)
Magnetics
Cold-plate
Capacitors
Power PCB
Driver PCB
SiC-MOSFET module
Fig. 12. 3D drawing of SiC-MOSFET composite boost converter composed
of driver board, power board, cold-plate, capacitors, and magnetics
Fig. 13 shows the measured waveforms of DAB primary
and secondary transformer currents, boost and buck switch-
ing node voltages, as well as DAB primary and secondary
switching node voltages, and boost and buck inductor currents
at 250Vin /650Vbus at very light load of 50 W. Under this
light load condition, DAB primary and secondary switches
achieve ZVS through a resonance between the output device
capacitance and transformer magnetizing inductance, so that
the DAB switching loss is minimized. Also, the buck module
139
is operated in the pass-through mode. As a result, the switching
loss and magnetic loss of the buck module are eliminated.
Vsw(dcx/sec)
Vsw(dcx/pri)
Itx(dcx/pri)
Itx(dcx/sec)
Vsw(boost)
IL(boost)
Vsw(buck)
IL(buck)
Fig. 13. DAB primary and secondary switching node voltages and transformer
primary and secondary currents, and boost and buck switching node voltages
and inductor currents at 250Vin /650Vbus at 50 W
Waveforms measured at 250Vin /650Vbus , 12 kW are shown
in Fig. 14. Since the DAB is operated at the voltage conversion
ratio close to the transformer turns ratio, the ac winding loss is
minimized. The operating conditions and estimated losses of
individual modules, and resulting efficiencies of the composite
boost converter, and a conventional Si-IGBT boost converter at
the operating points shown in Fig. 13 and 14 are listed in Table
IV. The comprehensive loss model shows good agreement
with measured data. Compared to the Si-IGBT conventional
boost converter [2], the composite converter offers substantial
efficiency improvements at light and intermediate loads. This
translates into significant improvements in average efficiencies
over EPA standard driving cycles.
A comparison of measured efficiency, efficiency predicted
based on the loss model, and efficiency of a conventional
SiC-MOSFET boost converter at the operating point of
250Vin /650Vbus is shown in Fig. 15. Compared to the conven-
tional boost converter, the composite boost converter achieves
a significant improvement under light loads, and maintains
very high efficiency over wide range of power.
A comparison of estimated average efficiencies over EPA
standard driving cycles and CAFE (Corporate Average Fuel
Economy)
 average efficiency and quality factor, Q =
P |Pout |/|Ploss |, switching frequency, and magnetic volume
of conventional boost converter with Si-IGBT [2] or SiC-
 100

Vsw(dcx/pri)
95
Vsw(dcx/sec)
Itx(dcx/pri) 90

Efficiency [%]
Itx(dcx/sec) 85

80

75

Vsw(boost)
70 Comprehensive loss model
Conventional Si-IGBT boost
IL(boost) Measured effciency
65
Vsw(buck) 0 2 4 6 8 10 12
Power [kW]

IL(buck) Fig. 15. Efficiency predicted based on the loss model, measured efficiency of
SiC-MOSFET composite boost converter, and efficiency of the conventional
Si-IGBT boost converter

Vsw(boost-1)
IL(boost-1)
Vsw(boost-2)
IL(boost-2)
Fig. 14. DAB primary and secondary switching node voltages and transformer
primary and secondary currents, boost and buck switching node voltages
and inductor currents, and interleaved boost module 1 and boost module 2
switching node voltages and inductor currents at 250Vin /650Vbus , 12 kW
MOSFET, and composite boost converter with Si-MOSFET
[5] or SiC-MOSFET are listed in Table V. A higher converter
quality factor Q means that a higher output power can be
achieved under the same cooling capacity, or that a reductions
in cooling capacity and associated costs can be achieved
without degradation of the output power rating. Compared to
the conventional Si-IGBT or SiC-MOSFET boost converter,
the composite boost converters using Si-MOSFET or SiC-
MOSFET exhibit improvements in average efficiencies on EPA
standard driving cycles. Furthermore, a substantial reduction
in magnetic volume is demonstrated with the SiC-MOSFET
composite boost converter.

VI. Conclusions
This paper is focused on the design of a SiC-MOSFET
TABLE IV composite boost converter with high power density and high
Operating conditions and estimated losses of individual module, and
resulting efficiency of composite boost converter and conventional boost average efficiency. The SiC composite boost converter achieves
converter [2] 22 kW/L volumetric power density, as well as 97.5% average
efficiency on the US06 driving cycle, as well as 97.8% CAFE
250Vin /650Vbus 250Vin /650Vbus averaged efficiency. Relative to the conventional 5.7 kW/L
Operating point
50 W 12 kW
Si-IGBT converter, magnetics volume is reduced by 76%,
Boost operating condition 250Vin /275Vout /21W 250Vin /275Vout /5kW power density is improved by 280%, and CAFE average loss
Boost loss 11W 94W
Buck operating condition 250Vin /250Vout /29W 250Vin /250Vout /7kW is reduced by 60%. Also, CAFE average loss reduction by
Buck loss 0W 5W a factor of 1.8 is achieved, compared to the CAFE average
DAB operating condition 250Vin /375Vout /29W 250Vin /375Vout /7kW loss of SiC-MOSFET conventional boost converter. A com-
DCX loss 18W 111W
prehensive loss model is used in the design optimization. The
Net loss 29W 210W loss model is experimentally verified on a prototype SiC-
Estimated efficiency 63.3% 98.2%
Measured efficiency 66.2% 97.3% MOSFET boost module. A weighted loss method is employed
Conv. boost op. 250Vin /650Vbus /50W 250Vin /650Vbus /12kW
to optimize the SiC composite boost on US06 driving cycle,
Conv. boost loss 337W 463W which leads to a predicted 39 kW peak power rating in a
Conv. boost efficiency 12.9% 96.3% volume of 1.8 liters. The prototype board is fabricated and
experimental results demonstrate efficiency improvements over
wide range of power and voltage, relative to the conventional

140
 TABLE V
Comparison of switching frequency, US06, CAFE average efficiency, converter quality factor (Q) and magnetic volume

Si-IGBT Si-MOSFET SiC-MOSFET SiC-MOSFET

Converter
Conv. boost [2] Composite boost [1] Conv. boost Composite boost
Switching frequency 10 kHz 20 kHz 240 kHz 240 kHz
US06 average efficiency 93.3% 98.3% 96.8% 97.5%
UDDS average efficiency 97.1% 98.2% 97.7% 98.0%
HWFET average efficiency 91.8% 98.0% 94.1% 97.6%
CAFE average efficiency 94.7% 98.1% 96.1% 97.8%
CAFE Q factor 17.9 51.6 24.6 44.9
Magnetic volume [mL] 343 372 136 82

Si-IGBT and SiC-MOSFET boost converters. Furthermore, it [11] Finite element method magnetics. [Online]. Available:
is shown how a reduction in loss at light load is important http://www.femm.info/wiki/HomePage
to achieve average efficiency improvements on standard EPA
driving cycles. The prototype SiC-MOSFET composite boost
converter exhibits 22 kW/L of volumetric power density and
20 kW/kg of gravimetric power density.
Acknowledgement
The information, data, or work presented herein was funded
in part by the Office of Energy Efficiency and Renewable
Energy (EERE), U.S. Department of Energy, under Award
Number DE-EE0006921.
References
[1] H. Chen, K. Sabi, H. Kim, T. Harada, R. Erickson, and D. Maksimovic,
“A 98.7% efficient composite converter architecture with application-
tailored efficiency characteristic,” Power Electronics, IEEE Transactions
on, vol. 31, no. 1, pp. 101–110, 2016.
[2] T. Burress, “Evaluation of the 2010 Toyota Prius hybrid synergy drive
system,” Oak Ridge National Laboratory (ORNL); Power Electronics
and Electric Machinery Research Facility, Technical Report ORNL/TM-
2010/253.
[3] T. Zhao, J. Wang, A. Q. Huang, and A. Agarwal, “Comparisons of
SiC-MOSFET and Si-IGBT based motor drive systems,” in Industry
Applications Conference, 2007. 42nd IAS Annual Meeting. Conference
Record of the 2007 IEEE, 2007, pp. 331–335.
[4] R. W. Erickson and D. Maksimovic, Fundamentals of Power Electronics.
Springer, 2001.
[5] H. Kim, H. Chen, D. Maksimovic, and R. Erickson, “Boost composite
converter design based on drive cycle weighted losses in electric vehicle
powertrain applications,” in Energy Conversion Congress and Exposition
(ECCE), 2016 IEEE, Sept 2016.
[6] D. Costinett, D. Maksimovic, and R. Zane, “Design and control for high
efficiency in high step-down dual active bridge converters operating at
high switching frequency,” Power Electronics, IEEE Transactions on,
vol. 28, no. 8, pp. 3931–3940, 2013.
[7] H. Kim, H. Chen, D. Maksimovic, and R. Erickson, “Design of a
high efficiency 30 kw boost composite converter,” in Energy Conversion
Congress and Exposition (ECCE), 2015 IEEE, Sept 2015, pp. 4243 –
4250.
[8] V. Pala, G. Wang, B. Hull, S. Allen, J. Casady, and J. Palmour, “Record-
low 10mΩ sic mosfets in to-247, rated at 900v,” in 2016 IEEE Applied
Power Electronics Conference and Exposition (APEC), March 2016, pp.
979–982.
[9] Z. Cole, B. McGee, J. Stabach, S. Storkov, B. Whitaker, D. Martin,
G. Falling, R. Shaw, and B. Passmore, “High temperature, wide bandgap
full-bridge power modules for high frequency applications,” in Inte-
grated Power Packaging (IWIPP), 2015 IEEE International Workshop
on, May 2015, pp. 119–122.
[10] V. Kapil, R. S. Charles, A. Tarek, and T. Hernan, “Accurate prediction
of ferrite core loss with nonsinusoidal waveforms using only steinmetz
parameters,” in Computers in Power Electronics (COMPEL), 2002.
Proceedings. 2002 IEEE Workshop on, June 2002, pp. 36–41.

141