P0903BDL

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

25V 9.5mΩ @VGS = 10V 56A

TO-252

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 25
V
Gate-Source Voltage VGS ±20
TC = 25 °C 56
Continuous Drain Current ID
TC = 100 °C 35
1
A
Pulsed Drain Current IDM 160
Avalanche Current IAS 34
Avalanche Energy L = 0.1mH EAS 60 mJ
TC = 25 °C 49
Power Dissipation PD W
TC = 100 °C 20
Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RqJC 2.55
°C / W
Junction-to-Ambient RqJA 63
1
Pulse width limited by maximum junction temperature.

Ver 1.1 1 2013-3-15

P0903BDL
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 25
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.0 1.6 3.0
Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA
VDS = 20V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 20V, VGS = 0V , TJ = 125 °C 10
Drain-Source On-State VGS = 5V, ID = 20A 12 19
RDS(ON) mΩ
Resistance1 VGS = 10V, ID = 25A 7 9.5
Forward Transconductance1 gfs VDS = 15V, ID = 20A 60 S
DYNAMIC
Input Capacitance Ciss 1400
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 300 pF
Reverse Transfer Capacitance Crss 190
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.3 Ω
Qg(VGS = 10V) 25
Total Gate Charge2
Qg(VGS = 5V) 11
2
VDS = 0.5V(BR)DSS, ID = 25A nC
Gate-Source Charge Qgs 6
Gate-Drain Charge2 Qgd 5
2 td(on)
Turn-On Delay Time 16
2 tr
Rise Time VDS = 15V, RL = 15Ω 25
nS
Turn-Off Delay Time 2 td(off) ID @ 1A, VGS = 10V, RGEN = 6Ω 60
Fall Time2 tf 16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 37 A
1 VSD IF = 25A, VGS = 0V
Forward Voltage 1.3 V
Reverse Recovery Time trr 35 nS
IF = 25A, dlF/dt = 100A / μS
Reverse Recovery Charge Qrr 61 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

Ver 1.1 2 2013-3-15

P0903BDL
N-Channel Enhancement Mode MOSFET

Ver 1.1 3 2013-3-15

P0903BDL
N-Channel Enhancement Mode MOSFET

Ver 1.1 4 2013-3-15

P0903BDL
N-Channel Enhancement Mode MOSFET

Ver 1.1 5 2013-3-15