L ab 6

Transistor Characteristics

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October 27, 2009
Circuits I
Abstract:
The goal in Lab 6 was to understand the behavior of the three modes of operation for a bipolar
junction transistors and their use for practical circuits. This was done in the first part by taking data
from simple circuits containing a 2N3904 transistor to identify its beta value. The second part confirms
the output characteristics of the transistor by analyzing the current and voltage of the collector and
emitter element of the transistor. The third part shows a deeper understanding of transistors and their
function by how to designed, built, and tested circuits using a function generator and a DC voltage
source paired with resistors and a potentiometer. In testing, use of the oscilloscope shows information
on the transistor’s state of operation from input to output waveforms. Finally, part four challenges to
design a circuit using a transistor to make a flashing LED on and off. This report confirms the equation,
Ic = βiB is true for the transistor in the active region but not when it is in its saturation mode. It also
confirms the output characteristics with another dependable source and shows success in the design
and testing of practical circuits.

Introduction:
Bipolar junction transistors (BJT) have three terminals which can be setup to operate in a circuit
as a signal amplifier, switch or in a digital logic circuit. Transistors operate in three different regions:
cutoff, active and saturation. Transistors can contain one of two types of material as the center
component, n or p material, thus the two types of BJTs are NPN and PNP. Two pn junctions are formed
in the transistor; collector-base junction and the emitter-base junction. The current flowing across one
junction affects the current in the other junction. Another way to look at this main transistor operation
is that using voltage between two of the thermals then controls the current flow in the third. This
current/voltage interaction makes the transistor into a useful circuit device, such as a switch or
amplifier.

The base current, iB is related to the current in the collector, iC by a value called beta (β) shown
in the following equation: iC = βiB. The beta (β) value varies depending on the design of the transistor.
Typically beta values are between 100 and 200. The sum of the collector and base current gives you the
current of the emitter; this is shown in Figure 0.1 below.

By implementing transistors into the following circuits we will learn their properties and further
understand their function and basic application. In this lab we discovered properties of the transistor
and later designed a functional circuit which design utilized the main principle of the transistor. First
step to achieve this was to use DC voltage sources and resistances to identify the Beta value. Then we
collected data to verify and understand output characteristics of the transistor graphically. Finally we
investigated cutoff and saturation modes in the transistor using triangular wave to graphically show on
the oscilloscope the interaction with the transistor and the voltage between the terminals which
controls the current flow. These steps helped us understand transistors in practice and lead us to be
able to design our own practical circuit, making an LED flash with constraints. These steps are outlined
with 4 areas of interest: Procedure, Data, Results, and Short conclusion. Each additional part of the lab,
as described above, is building a better understanding on how transistors operate in circuits and can be
used in practical circuits.

(Figure 0.1)

Part 1:
A. Procedure

We built the circuit shown below (Figure 1.1) on a bread board, and collected data on the
current flowing into the base and the current flowing into the collector of the transistor. To gather
different points of data, we choose 5 points between 20 µA and 60 µA A flowing into the base, inclusive.
To accomplish this, we set the potentiometer at the max resistance of 500K Ω, and wired an ammeter
between the 5 volt source and the potentiometer at the base, and an ammeter between the 1K Ω
resistor and the collector. We turned on both power sources and adjadjusted
usted the potentiometer until we
reached each desired current into the base, and recorded the respective current flowing into the
collector. This data is represented below in Table 1.1.
 (Figure 1.1)

B. Data

Desired iB (µA) 20 30 40 50 60
iB (µA) 20.24 30.05 39.94 50.78 59.53
iC (mA) 3.386 5.0421 6.625 8.25 9.544
(Table 1.1)

vBB = 5V
vCC= 12V
RC= 1K Ω

C. Results

We assumed that β would be somewhere around 100-200,

100 200, as that is common for a transistor.
After obtaining all the data points as shown above in Table 1.1, we found 5 values of β which are shown
below in Table 1.2.

Desired iB (µA) 20 30 40 50 60
β = (iC)/(iB) 167.2925 167.7903 165.8738 162.4655 160.3225
(Table 1.2)

We then averaged these to get β:

β = 164.7489

This result agrees with our assumption that β would be somewhere around 100
100-200.
200.
We then found the minimum current iB needed to put the transistor into saturation:

iC = β*iB

iB for saturation = (iC max) / β

iC max = (12 – 0.2)v / 164.4749

iC max = 11.8 mA

Therefore:

iB for saturation = 71.7 µA

D. Short Conclusion

The data we collected shows that iB and iC are linearly related by β. This agrees with the
equation iC = β*iB, where β = 164.7489. With this information we found that the saturation
current into the base is ≥ 71.7 µA. The value of β we found was as in a range we had expected.

Part 2:
A. Procedure

We build the circuit from part 1, shown above (Figure 1.1) on a bread board and collected data
on the current flowing into the collector and the voltage across the collector and emitter with three
different values of current for the base. We obtained this data by wiring an ammeter between the 1K
resistor and the collector, which will give us our iC data. We also wired a voltmeter in parallel to the
collector and emitter to give us our vCE data. Then, we wired an ammeter between the 5V source and
the potentiometer at the base to measure iB. Next we turned on both power sources and adjusted the
potentiometer until the ammeter gathering our iB data reads 20µA. Now we obtained data by adjusting
the source voltage (vCC) which is connected with the 1K resistor (Rc), in series with the collector part of
the transistor. To accomplish this we set our vCC to 14V and decrease it by 2 volts, measuring our vCE and
iC every time we change voltage, ending at 2V as shown in Table 2.1. We did not collect data points
where Table 2.1 is marked with an “X”. We then set iB to 40µA and gathered data as before, starting
with 16V, ending with 4V. Finally we set our iB to 60µA and collected data from 18V to 6V. This data is
represented in Table 2.1 below.
B. Data

iB=20 µA iB=40 µA iB=60 µA

Vsource (V) iC (mA) vCE (V) iC (mA) vCE (V) iC (mA) vCE (V)
18 X X X X 9.869 8.28
16 X X 6.693 9.53 9.627 4.47
14 3.401 10.76 6.608 7.51 9.742 6.39
12 3.357 8.81 6.571 5.58 9.743 2.33
10 3.311 6.76 6.469 3.61 9.505 0.6
8 3.277 4.77 6.401 1.67 7.82 0.25
6 3.232 2.81 5.768 0.27 5.836 0.21
4 3.172 0.91 3.872 0.2 X X
2 1.79 0.2 X X X X
(Table 2.1)

vBB = 5V
RC= 1K Ω

C. Results

Our output characteristics shown in Graph 2.1 are similar to those in the Hambley textbook (Figure 2.1)
which confirms our data is correct.

iC vs vCE Output Characteristics

12

10

8
iB=20µA
iC (mA) 6 iB=40µA
iB=60µA
4

0
0 2 4 6 8 10 12
vCE (V)
(Graph 2.1)
 (Figure 2.1)

D. Short Conclusion

We had no issues gathering the data points for each iB value. Our results shown in Graph 2.1
match our expectations and the curvature of the graphs are verified by the Hambley
Hamble textbook, shown in
Figure 2.1.

Part 3:
A. Procedure

We built the circuit shown below in Figure 3.1 and found the value for RC to put the transistor
into saturation with the given values for RB and VCC. VBB is a triangular wave with voltages between 0 and
5 volts, inclusive.
 (Figure 3.1)

B. Data

RB = 50K Ω
VCC = 10V
VBB = 0 to 5 volts, inclusive

C. Results

To find the value for RC to put the transistor into saturation:

iC = β*iB

iC = 164.7489(.0452 mA) = 7.45mA

iC = 7.45 mA

Using KVL on the left side of the circuit:

-10v + RC (iC) + 0.2v = 0

-10v + RC (7.45 mA) + 0.2v = 0

Solving for RC gives:

RC = 1.32k Ω

From this circuit, we get the following waveforms from the oscilloscope:

(Graph 3.1) (Graph 3.2)

In Graph 3.1, the output waveform is clipped on the top and bottom due to the transistor entering
saturation (VCE = 200 mV) and cutoff (VCE = 10 V).

In Graph 3.2, the scope is in X-Y mode, showing at the top of the graph, the transistor is in cutoff. In the
middle which has slope, the transistor is in its active region and finally the bottom shows it in saturation.
Graph 3.2 matches the transfer characteristics shown on page 271 in the Hambley textbook.

D. Short Conclusion

When the output was around 3 volts and up to 5 volts, the transistor went into saturation, and
VCE dropped to 200 mV (0.2 V). As the output decreased below 3 volts, the transistor entered the active
region. When the input was between 0 and 0.7 volts, no current would flow into the collector, so VEC
was 10 volts. The output waveform was clipped on the top and bottom due to this fact.
Part 4:
A. Procedure

We designed our circuit much like that from Figure 3.1 but we added an LED between the VCC
and the RC in order to make “A flasher that goes from on to off to on gradually”. We used the available
function generator to produce a triangular wave for our VBB with voltages between 0 and 5 volts. We set
the function generator to 5 Hz.

B. Data

ic = 20mA iB < 1mA VLED = 2V

VCC = 10V VBB = 5V (Triangular wave input) β = 165

C. Results

To find the value for RC and RB we calculate the voltage in the loop and use ohms law:

Rc = (10V-0.2V-2.0V)/0.02A = 390 Ω
Rc = 390 Ω

iC = β*iB

iB = 20mA / 165 = 0.121mA

iB = 0.121mA

RB = (5V-0.7V)/0.121mA
RB = 35.5K Ω

The X-Y mode on the scope shows how the transistor is reacting in the circuit below in Graph 4.1. It is in
saturation for a long time, making the LED stay off longer than it will be fully bright, but the slope shows
how the LED will get brighter when it’s on the highest point, and then gradually dims out again.

(Graph 4.1)
D. Short Conclusion

We completed the design process successfully in making the current through the diode be
limited to 20mA, only drawing 1mA from the function generator and setting the voltage for the LED to
be around 2V. The LED flashed on to off to on gradually successfully as can be seen on Graph 4.1 and we
did demo our flasher to two other groups. At first glance the task for part 4 looked daunting, but after
consideration from part 3 in the lab, we succeeded quickly, which was unexpected. We had no
discrepancies between the process and results for part 4.

Conclusion:
We were able to find the Beta of the 2N3904 transistor with no issues. We had planned on the
Beta value being around 100-200, and our β = 164.7489 which fell into the region we had expected. The
values of Beta we got from different base currents varied slightly from each other, which was expected
as the input characteristic isn’t perfectly linear, demonstrating that the equation iC = β*iB is only
approximate. This investigation succeeded in how Beta is related to transistors.

The graphs from the oscilloscope showed us that what we had theorized about the transistor
(being an inverting amplifier) was accurate. When the input was around 5 volts, the output was a low
(0.2V) signal. When the input was around 0 volts (below 0.7 volts) the output was the high (VCC voltage)
signal. We decided to plot the transfer characteristics of the transistor using the oscilloscope, which
gave us a graph similar from that in the Hambley text. The slopes between the high and low signals on
the output side of the transistor are when the transistor was in active mode. We then used this
knowledge to create a circuit that makes an LED gradually turn on and off that is amplified using a
transistor. This investigation into cutoff, active, and saturation regions of the transistor was successful.
Appendix: