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1.5
Features
1) Low on-resistance.
5.5
9.5
1.5
2) Fast switching speed.
0.9
2.5
0.75
3) Drive circuits can be simple.
0.8Min.
0.65
Applications
Switching
Thermal resistance
Parameter Symbol Limits Unit
Channel to Case Rth (ch-c) * 8.33 °C / W
* T c=25C
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© 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.02 - Rev.A
RSD050N06 Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.02 - Rev.A
RSD050N06 Data Sheet
Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ)
15.0 15.0
Ta=25°C Ta=25°C
pulsed pulsed
12.5 12.5
VGS=10.0V
VGS=10.0V
VGS=4.5V
Drain Current : ID [A]
VGS=3.5V
5.0 5.0
2.5 2.5
VGS=3.0V
0.0 0.0
0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
1000 1000
Ta=25°C VGS=10V
pulsed
pulsed
Static Drain-Source On-State Resistance
VGS=4.0V
100
VGS=4.5V
RDS(on) [mΩ]
RDS(on) [mΩ]
VGS=10V
100
Ta=125°C
Ta=75°C
Ta=25°C
10 Ta=-25°C
10 1
0.01 0.1 1 10 0.01 0.1 1 10
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
1000 1000
VGS=4.5V VGS=4.0V
pulsed pulsed
Static Drain-Source On-State Resistance
100 100
RDS(on) [mΩ]
RDS(on) [mΩ]
Ta=125°C
Ta=125°C Ta=75°C
Ta=75°C Ta=25°C
Ta=25°C Ta=-25°C
10 Ta=-25°C 10
1 1
0.01 0.1 1 10 0.01 0.1 1 10
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© 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.02 - Rev.A
RSD050N06 Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics
10 10
VDS=10V VDS=10V
pulsed pulsed
1
Forward Transfer Admittance
1 0.1 Ta=125°C
Ta=25°C
Ta=-25°C 0.01 Ta=-25°C
0.1 0.001
0.0001
0.01 0.00001
0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Fif.9 Source Current vs. Source-Drain Voltage Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
10 1000
VGS=0V Ta=25°C
pulsed
pulsed
Static Drain-Source On-State Resistance
1 ID=2.5A
Ta=125°C
Ta=75°C
Source Current : Is [A]
Ta=25°C
0.1 Ta=-25°C
RDS(on) [mΩ]
500
0.01 ID=5.0A
0.001
0.0001 0
0.0 0.5 1.0 0 2 4 6 8 10 12 14 16 18 20
1000 12
VDD≒30V Ta=25°C
VGS=10V VDD=30V
RG=10Ω 10 ID=5A
tf Ta=25°C Pulsed
Pulsed
Gate-Source Voltage : VGS [V]
Switching Time : t [ns]
100 8
td(off) 6
td(on)
10 4
2
tr
1 0
0.01 0.1 1 10 0 2 4 6 8 10
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© 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.02 - Rev.A
RSD050N06 Data Sheet
Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area
1000 100
Ta=25°C Operation in this area is limited by RDS(on)
f=1MHz ( VGS = 10V )
VGS=0V
10
Drain Current : ID [ A ]
Capacitance : C [pF]
Ciss PW = 100μs
100 1
PW = 1ms
Coss
PW = 10ms
0.1
DC Operation
Tc=25°C
Crss Single Pulse
10 0.01
0.01 0.1 1 10 100 0.1 1 10 100
10
Tc=25°C
Normalized Transient Thermal Resistance : r(t)
Single Pulse
Rth(ch-a)=8.33°C/W
1 Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.1
0.01
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
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© 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.02 - Rev.A
RSD050N06 Data Sheet
Measurement circuits
Pulse width
VGS ID
VDS 90%
50% 50%
RL VGS 10%
VDS
D.U.T. 10% 10%
ton toff
VG
VGS ID
VDS
Qg
RL
VGS
IG(Const.) D.U.T.
Qgs Qgd
VDD
Charge
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© 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.02 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A