BC556/557/558/559/560

BC556/557/558/559/560

Switching and Amplifier

• High Voltage: BC556, VCEO= -65V
• Low Noise: BC559, BC560
• Complement to BC546 ... BC 550

1 TO-92
1. Collector 2. Base 3. Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Capacitance
: BC556 -80 V
: BC557/560 -50 V
: BC558/559 -30 V
VCEO Collector-Emitter Voltage
: BC556 -65 V
: BC557/560 -45 V
: BC558/559 -30 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current (DC) -100 mA
PC Collector Dissipation 500 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA
hFE DC Current Gain VCE= -5V, IC=2mA 110 800
VCE Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -90 -300 mV
(sat) IC= -100mA, IB= -5mA -250 -650 mV
VBE (sat) Collector-Base Saturation Voltage IC= -10mA, IB= -0.5mA -700 mV
IC= -100mA, IB= -5mA -900 mV
VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA -600 -660 -750 mV
VCE= -5V, IC= -10mA -800 mV
fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=10MHz 150 MHz
Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF
NF Noise Figure : BC556/557/558 VCE= -5V, IC= -200µA 2 10 dB
: BC559/560 f=1KHz, RG=2KΩ 1 4 dB
: BC559 VCE= -5V, IC= -200µA 1.2 4 dB
: BC560 RG=2KΩ, f=30~15000MHz 1.2 2 dB

hFE Classification
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BC556/557/558/559/560
Typical Characteristics

-50 1000

-45 IB = -400 μA VCE = -5V

IC[mA], COLLECTOR CURRENT

-40 IB = -350 μA

hFE, DC CURRENT GAIN

-35 IB = -300 μA
100
-30
IB = -250 μA

-25 IB = -200 μA

-20 IB = -150 μA
10
-15
IB = -100 μA
-10
IB = -50 μA
-5

-0 1
-2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -0.1 -1 -10 -100

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

-10 -100

IC = -10 IB VCE = -5V

IC[mA], COLLECTOR CURRENT

-1 V BE(sat) -10

-0.1 -1

VCE(sat)

-0.01 -0.1
-0.1 -1 -10 -100 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

1000

VCE = -5V
f=1MHz
10 IE = 0
Cob(pF), CAPACITANCE

100

1 10
-1 -10 -100 -1 -10

VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product

©2000 Fairchild Semiconductor International Rev. A, February 2000