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Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit Symbol Conditions Ratings Unit
µA 36.4±0.3 6.0±0.2
VCBO –200 V ICBO VCB=–200V –100max
24.4±0.2
VCEO –200 V IEBO VEB=–6V –100max µA 2-ø3.2±0.1 9
2.1
7
IC hFE VCE=–4V, IC=–8A 50min∗
21.4±0.3
–17 A a
IB –5 A VCE(sat) IC=–10A, IB=–1A –2.5max V b
PC 200(Tc=25°C) W fT VCE=–12V, IE=1A 20typ MHz
2
4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF
3
Tstg –55 to +150 °C ∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180) 1.05 +0.2
-0.1
0.65 +0.2
-0.1
mA
.5
0
–60
–1
–15 –15
0mA
–40
A –2
–200m
–10 –10
–1 00 m A
mp)
)
Temp
)
e Te
Temp
–1
(Case
(Cas
–5 –50mA –5
(Case
I C =–15A
125˚C
–30˚C
25˚C
I B =–20mA –10A
–5A
0 0 0
0 –1 –2 –3 –4 0 –1 –2 –3 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
300 200 2
125˚C
DC Curr ent Gain h FE
DC Curr ent Gain h FE
Typ 25˚C 1
Transient Thermal Resistance
100
100
–30˚C
0.5
50
50
10 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –17 –0.02 –0.1 –0.5 –1 –5 –10 –17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
160
10
Typ
Cut- off Fr equ ency f T (MH Z )
0m
–10
W
D
ith
Collector Curr ent I C (A)
C
20
In
–5
fin
120
ite
he
at
si
nk
80
–1
10
Without Heatsink
5
0 –0.1 0
0.02 0.1 1 10 –2 –10 –100 –300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
22