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2SA1494

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit Symbol Conditions Ratings Unit
µA 36.4±0.3 6.0±0.2
VCBO –200 V ICBO VCB=–200V –100max
24.4±0.2
VCEO –200 V IEBO VEB=–6V –100max µA 2-ø3.2±0.1 9
2.1

VEBO –6 V V(BR)CEO IC=–50mA –200min V

7
IC hFE VCE=–4V, IC=–8A 50min∗

21.4±0.3
–17 A a
IB –5 A VCE(sat) IC=–10A, IB=–1A –2.5max V b
PC 200(Tc=25°C) W fT VCE=–12V, IE=1A 20typ MHz
2

4.0max
20.0min
Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF
3
Tstg –55 to +150 °C ∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180) 1.05 +0.2
-0.1
0.65 +0.2
-0.1

5.45±0.1 5.45±0.1 3.0 +0.3


-0.1
■Typical Switching Characteristics (Common Emitter)
B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
–40 4 –10 –10 5 –1 1 0.6typ 0.9typ 0.2typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)


(V C E =–4V)
–17 –3 –17
–1A
Collector-Emitter Saturation Voltage V C E (s at) (V )
A

mA
.5

0
–60
–1

–15 –15
0mA
–40

Collector Current I C (A)


Collector Current I C (A)

A –2
–200m
–10 –10

–1 00 m A

mp)

)
Temp
)
e Te
Temp
–1

(Case
(Cas
–5 –50mA –5

(Case
I C =–15A

125˚C

–30˚C
25˚C
I B =–20mA –10A
–5A

0 0 0
0 –1 –2 –3 –4 0 –1 –2 –3 0 –1 –2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics


θ j - a (˚C /W)

(V C E =–4V) (V C E =–4V)
300 200 2
125˚C
DC Curr ent Gain h FE
DC Curr ent Gain h FE

Typ 25˚C 1
Transient Thermal Resistance

100
100
–30˚C
0.5
50
50

10 20 0.1
–0.02 –0.1 –0.5 –1 –5 –10 –17 –0.02 –0.1 –0.5 –1 –5 –10 –17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating


(V C E =–12V)
30 –50 200
20 3m
m s
s 10ms
Ma xim um Powe r Dissipat io n P C (W)

160
10

Typ
Cut- off Fr equ ency f T (MH Z )

0m

–10
W

D
ith
Collector Curr ent I C (A)

C
20
In

–5
fin

120
ite
he
at
si
nk

80
–1
10

–0.5 Without Heatsink


Natural Cooling 40

Without Heatsink
5
0 –0.1 0
0.02 0.1 1 10 –2 –10 –100 –300 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

22

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